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1. 发明授权

US08871610B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08871610B2
公开(公告)日：2014-10-28
申请号：US12568768
申请日：2009-09-29
申请人： Akihisa Shimomura , Masaki Koyama , Eiji Higa
发明人： Akihisa Shimomura , Masaki Koyama , Eiji Higa
IPC分类号： H01L21/30 , H01L21/762
CPC分类号： H01L21/76254
摘要： To increase adhesion between a single crystal semiconductor layer and a base substrate and to reduce bonding defects therebetween. To perform radical treatment on a surface of a semiconductor substrate to form a first insulating film on the semiconductor substrate; irradiate the semiconductor substrate with accelerated ions through the first insulating film to form an embrittlement region in the semiconductor substrate; form a second insulating film on the first insulating film; perform heat treatment after bonding a surface of the second insulating film and a surface of the base substrate to perform separation along the embrittlement region so that a semiconductor layer is formed over the base substrate with the first and second insulating films interposed therebetween; etch the semiconductor layer; and irradiate the semiconductor layer on which the etching is performed with a laser beam.
摘要翻译：为了增加单晶半导体层与基底基板之间的粘合力并减小它们之间的接合缺陷。在半导体衬底的表面进行自由基处理，以在半导体衬底上形成第一绝缘膜; 通过第一绝缘膜照射具有加速离子的半导体衬底，以在半导体衬底中形成脆化区域; 在第一绝缘膜上形成第二绝缘膜; 在接合第二绝缘膜的表面和基底表面之后进行热处理，以沿着脆化区域进行分离，使得在第一和第二绝缘膜之间形成在基底基板上的半导体层; 蚀刻半导体层; 并用激光束照射进行了蚀刻的半导体层。

2. 发明授权

US08343847B2 Manufacturing method of SOI semiconductor device 有权
标题翻译： SOI半导体器件的制造方法
公开(公告)号：US08343847B2
公开(公告)日：2013-01-01
申请号：US12575555
申请日：2009-10-08
申请人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
发明人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L27/1266 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
摘要翻译：为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。单晶半导体层通过激光束的照射而熔化的次数是1。

3. 发明申请

US20100093153A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20100093153A1
公开(公告)日：2010-04-15
申请号：US12575555
申请日：2009-10-08
申请人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
发明人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
摘要翻译：为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。单晶半导体层通过激光束的照射而熔化的次数是1。

4. 发明申请

US20100087047A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100087047A1
公开(公告)日：2010-04-08
申请号：US12568768
申请日：2009-09-29
申请人： Akihisa Shimomura , Masaki Koyama , Eiji Higa
发明人： Akihisa Shimomura , Masaki Koyama , Eiji Higa
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： To increase adhesion between a single crystal semiconductor layer and a base substrate and to reduce bonding defects therebetween. To perform radical treatment on a surface of a semiconductor substrate to form a first insulating film on the semiconductor substrate; irradiate the semiconductor substrate with accelerated ions through the first insulating film to form an embrittlement region in the semiconductor substrate; form a second insulating film on the first insulating film; perform heat treatment after bonding a surface of the second insulating film and a surface of the base substrate to perform separation along the embrittlement region so that a semiconductor layer is formed over the base substrate with the first and second insulating films interposed therebetween; etch the semiconductor layer; and irradiate the semiconductor layer on which the etching is performed with a laser beam.
摘要翻译：为了增加单晶半导体层与基底基板之间的粘合力并减小它们之间的接合缺陷。在半导体衬底的表面进行自由基处理，以在半导体衬底上形成第一绝缘膜; 通过第一绝缘膜照射具有加速离子的半导体衬底，以在半导体衬底中形成脆化区域; 在第一绝缘膜上形成第二绝缘膜; 在接合第二绝缘膜的表面和基底表面之后进行热处理，以沿着脆化区域进行分离，使得半导体层在第一和第二绝缘膜之间形成在基底基板上; 蚀刻半导体层; 并用激光束照射进行了蚀刻的半导体层。

5. 发明授权

US08772128B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08772128B2
公开(公告)日：2014-07-08
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
发明人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

6. 发明授权

US07994021B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07994021B2
公开(公告)日：2011-08-09
申请号：US11881285
申请日：2007-07-25
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

7. 发明授权

US08895407B2 Manufacturing method of SOI substrate and manufacturing method of semiconductor device 有权
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US08895407B2
公开(公告)日：2014-11-25
申请号：US12891271
申请日：2010-09-27
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tatsuya Mizoi , Eiji Higa , Yoji Nagano
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tatsuya Mizoi , Eiji Higa , Yoji Nagano
IPC分类号： H01L21/46 , H01L21/762 , H01L27/12 , H01L51/00 , H01L29/786
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
摘要翻译：证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

8. 发明授权

US08772129B2 Manufacturing method of SOI substrate and manufacturing method of semiconductor device 有权
公开(公告)号：US08772129B2
公开(公告)日：2014-07-08
申请号：US12891271
申请日：2010-09-27
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tatsuya Mizoi , Eiji Higa , Yoji Nagano
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tatsuya Mizoi , Eiji Higa , Yoji Nagano
IPC分类号： H01L21/46 , H01L21/762 , H01L27/12 , H01L51/00 , H01L29/786
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

9. 发明授权

US07820524B2 Manufacturing method of SOI substrate and manufacturing method of semiconductor device 有权
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US07820524B2
公开(公告)日：2010-10-26
申请号：US12078212
申请日：2008-03-28
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tatsuya Mizoi , Eiji Higa , Yoji Nagano
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tatsuya Mizoi , Eiji Higa , Yoji Nagano
IPC分类号： H01L21/46
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
摘要翻译：证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

10. 发明授权

US08703579B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08703579B2
公开(公告)日：2014-04-22
申请号：US13186803
申请日：2011-07-20
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

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