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1. 发明申请

US20110174533A1 ELECTRONIC APPARATUS, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS 有权
标题翻译：电子装置，制造基板的方法和制造电子装置的方法
公开(公告)号：US20110174533A1
公开(公告)日：2011-07-21
申请号：US12984929
申请日：2011-01-05
申请人： Yoji NAGANO
发明人： Yoji NAGANO
IPC分类号： H05K5/00 , H05K3/30
CPC分类号： H05K3/341 , H03H9/1021 , H05K1/0306 , H05K1/111 , H05K3/0014 , H05K3/0052 , H05K9/0026 , H05K2201/09845 , H05K2201/10371 , H05K2203/0108 , Y02P70/613 , Y10T29/4913
摘要： An electronic apparatus includes: a substrate which has a step portion in an edge portion; an electronic component which is bonded to a surface of the substrate inward of the step portion of the substrate; and a cap member which is bonded to the step portion so as to seal the electronic component, wherein a wall surface of the step portion is formed to be inclined from the step portion toward an electronic component bonding region or to be perpendicular to the step portion.
摘要翻译：电子设备包括：在边缘部分具有台阶部分的基板; 电子部件，其在所述基板的台阶部的内侧粘合到所述基板的表面; 以及盖构件，其结合到所述台阶部以密封所述电子部件，其中所述台阶部的壁面形成为从所述台阶部向电子部件接合区域倾斜或者与所述台阶部分垂直。

2. 发明申请

US20110076837A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20110076837A1
公开(公告)日：2011-03-31
申请号：US12891271
申请日：2010-09-27
申请人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
发明人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
IPC分类号： H01L21/30
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
摘要翻译：证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

3. 发明授权

US07897476B2 Method of manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07897476B2
公开(公告)日：2011-03-01
申请号：US12078411
申请日：2008-03-31
申请人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
发明人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/2007 , H01L21/268 , H01L21/302 , H01L21/84
摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOI substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.
摘要翻译：为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOI基板。用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

4. 发明申请

US20090072343A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件和电子器件
公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译：使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。而且，不用化学抛光而形成的高性能半导体器件。此外，使用该半导体器件的电子设备。包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为大于或等于1nm且小于或等于7nm。或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

5. 发明授权

US5298328A Packing material and method of making same 失效
标题翻译：包装材料及其制作方法
公开(公告)号：US5298328A
公开(公告)日：1994-03-29
申请号：US743514
申请日：1991-08-12
申请人： Hajime Abe , Tsutomu Nishiwaki , Yoji Nagano
发明人： Hajime Abe , Tsutomu Nishiwaki , Yoji Nagano
IPC分类号： C08K9/02 , C08L101/00 , H01C1/02 , H01L21/56 , H01L23/29 , H01L23/31 , B32B5/16
CPC分类号： H01L23/295 , H01L23/291 , H01L24/01 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , Y10T428/2962 , Y10T428/2991
摘要： A packing material for sealing electronic devices having improved, higher thermal conductivity than amorphous silica-containing packing material. The packing material comprises a thermosetting resin and a filler particle comprising a core inorganic particle and an amorphous silica coating on the core particle. The core particle is made from material having a thermal conductivity higher than that of amorphous silica, for example, a metal nitride such as aluminum nitride or silicon nitride, or a metal oxide such as aluminum oxide, or crystalline silicon dioxide. The amorphous silica coating may be formed by hydrolysis of alkoxysilane.
摘要翻译：一种用于密封具有比无定形二氧化硅的包装材料具有改进的，更高的热导率的电子器件的包装材料。包装材料包括热固性树脂和在核心颗粒上包含芯无机颗粒和无定形二氧化硅涂层的填料颗粒。核心颗粒由导热率高于无定形二氧化硅的材料制成，例如，诸如氮化铝或氮化硅的金属氮化物，或诸如氧化铝的金属氧化物或结晶二氧化硅。无定形二氧化硅涂层可以通过烷氧基硅烷的水解形成。

6. 发明授权

US08505804B2 Metal paste for sealing, hermetic sealing method for piezoelectric element, and piezoelectric device 有权
标题翻译：用于密封的金属膏，压电元件的气密密封方法和压电元件
公开(公告)号：US08505804B2
公开(公告)日：2013-08-13
申请号：US12373311
申请日：2008-03-18
申请人： Toshinori Ogashiwa , Masayuki Miyairi , Yoji Nagano
发明人： Toshinori Ogashiwa , Masayuki Miyairi , Yoji Nagano
IPC分类号： B23K31/02 , H04R17/00 , B22F3/00
CPC分类号： H01L23/10 , B22F1/0074 , B22F3/1021 , B22F2003/248 , B22F2998/10 , B22F2999/00 , H01L2924/0002 , H01L2924/01079 , H01L2924/3011 , H03H9/1021 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , B22F9/24 , B22F3/24 , B22F2201/20 , H01L2924/00
摘要： The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 μm to 1.0 μm and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. This metal paste preferably contains an additive such as a surfactant in accordance with the application method. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.
摘要翻译：本发明是一种用于密封的金属膏，其包含金属粉末和有机溶剂，其特征在于，金属粉末是选自金粉末，银粉末，铂粉末和钯粉末中的一种或多种金属粉末，其具有纯度为99.9重量％以上，平均粒径为0.1〜1.0微米，金属粉末的含量为85〜93重量％，有机溶剂的比例为5〜15 重量％。该金属糊料优选含有根据本申请方法的添加剂，如表面活性剂。作为使用这种金属膏的密封方法，有一种施加和干燥金属糊料的方法，在80〜300℃下烧结，形成金属粉末烧结体，然后在加热的同时加压基材和帽部件金属粉末烧结体。

7. 发明申请

US20120025673A1 QUARTZ CRYSTAL DEVICE AND METHOD FOR SEALING THE SAME 有权
标题翻译： QUARTZ晶体装置及其密封方法
公开(公告)号：US20120025673A1
公开(公告)日：2012-02-02
申请号：US13272952
申请日：2011-10-13
申请人： Yoji NAGANO , Tatsuya Anzai , Hideo Tanaya
发明人： Yoji NAGANO , Tatsuya Anzai , Hideo Tanaya
IPC分类号： H01L41/053 , B29C65/48
CPC分类号： H03H9/0595 , B22F1/0074 , B22F7/062 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/09701 , H03H9/0547 , H03H9/1021 , H03H9/1035 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908 , Y10T156/1089 , H01L2924/00
摘要： A quartz crystal device includes a crystal resonator element and a package including a plurality of components. The plurality of components are bonded using a metal paste sealing material containing a metallic particle having an average particle size from 0.1 to 1.0 μm, an organic solvent, and a resin material in proportions of from 88 to 93 percent by weight, from 5 to 15 percent by weight, and from 0.01 to 4.0 percent by weight, respectively, to hermetically seal the crystal resonator element in the package.
摘要翻译：石英晶体器件包括晶体谐振器元件和包括多个元件的封装。使用含有平均粒径为0.1〜1.0μm的金属粒子，有机溶剂和树脂材料的金属膏状密封材料，按照88〜93重量％的比例粘合多个成分，5〜15 分别为0.01〜4.0重量％，以密封封装体内的晶体振子元件。

8. 发明申请

US20110136320A1 METHOD OF MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110136320A1
公开(公告)日：2011-06-09
申请号：US13019626
申请日：2011-02-02
申请人： Shunpei YAMAZAKI , Eiji HIGA , Yoji NAGANO , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Shunpei YAMAZAKI , Eiji HIGA , Yoji NAGANO , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007 , H01L21/268 , H01L21/302 , H01L21/84
摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.
摘要翻译：为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOL基板。用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

9. 发明授权

US07928635B2 Package for electronic component and piezoelectric resonator 有权
标题翻译：电子部件和压电谐振器封装
公开(公告)号：US07928635B2
公开(公告)日：2011-04-19
申请号：US12348578
申请日：2009-01-05
申请人： Yoji Nagano , Hideo Tanaya , Tatsuya Anzai
发明人： Yoji Nagano , Hideo Tanaya , Tatsuya Anzai
IPC分类号： H01L41/053
CPC分类号： H03H9/1021
摘要： A package for electronic component includes: a rectangular package body, a lid hermetically sealing the package body, an electrode pad provided in the package body, a mounting terminal provided at least near four corners of a bottom surface of the package body and having a bump on a mounting surface, and a plurality of coupling electrodes electrically coupling the pad to the mounting terminal.
摘要翻译：一种用于电子部件的封装包括：矩形封装体，密封封装体的盖子，设置在封装主体中的电极焊盘，设置在封装主体的底面的至少四个角附近的安装端子，在安装表面上，以及多个耦合电极，其将该焊盘电耦合到安装端子。

10. 发明申请

US20090115028A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：制造半导体衬底，半导体器件和电子器件的方法
公开(公告)号：US20090115028A1
公开(公告)日：2009-05-07
申请号：US12246569
申请日：2008-10-07
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Yoji NAGANO , Junpei MOMO
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Yoji NAGANO , Junpei MOMO
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L27/1266 , H01L21/02532 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1285 , H01L29/66772
摘要： A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized.
摘要翻译：制造包括其间具有缓冲层的单晶半导体层的半导体衬底。掺杂氢的半导体衬底形成含有大量氢的损伤层。在单晶半导体衬底和支撑衬底接合之后，加热半导体衬底，使得单晶半导体衬底沿着分离平面分离。用单晶半导体层侧的激光照射单晶半导体层，从单晶半导体层的激光照射区域的表面向深度方向熔融区域。基于固体的单晶半导体层的平面取向而不熔化而进行重结晶; 因此，回收单晶半导体层的结晶度，使单晶半导体层的表面平坦化。

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