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1. 发明授权

US07897476B2 Method of manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07897476B2
公开(公告)日：2011-03-01
申请号：US12078411
申请日：2008-03-31
申请人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
发明人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/2007 , H01L21/268 , H01L21/302 , H01L21/84
摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOI substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.
摘要翻译：为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOI基板。用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

2. 发明授权

US08193068B2 Method of manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08193068B2
公开(公告)日：2012-06-05
申请号：US13019626
申请日：2011-02-02
申请人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
发明人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/2007 , H01L21/268 , H01L21/302 , H01L21/84
摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.
摘要翻译：为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOL基板。用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

3. 发明申请

US20080261376A1 Method of manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20080261376A1
公开(公告)日：2008-10-23
申请号：US12078411
申请日：2008-03-31
申请人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
发明人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007 , H01L21/268 , H01L21/302 , H01L21/84
摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOI substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.
摘要翻译：为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOI基板。用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

4. 发明授权

US07994021B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07994021B2
公开(公告)日：2011-08-09
申请号：US11881285
申请日：2007-07-25
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

5. 发明授权

US08703579B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08703579B2
公开(公告)日：2014-04-22
申请号：US13186803
申请日：2011-07-20
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

6. 发明授权

US08772128B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08772128B2
公开(公告)日：2014-07-08
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
发明人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

7. 发明申请

US20110275191A1 Method of Manufacturing Semiconductor Device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20110275191A1
公开(公告)日：2011-11-10
申请号：US13186803
申请日：2011-07-20
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/02
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

8. 发明申请

US20080026543A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080026543A1
公开(公告)日：2008-01-31
申请号：US11881285
申请日：2007-07-25
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

9. 发明申请

US20120286312A1 LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE USING THE LIGHT-EMITTING DEVICE 有权
标题翻译：使用发光装置的发光装置和电子装置
公开(公告)号：US20120286312A1
公开(公告)日：2012-11-15
申请号：US13467166
申请日：2012-05-09
申请人： Kaoru HATANO , Akihiro Chida , Akihisa Shimomura , Shunpei Yamazaki
发明人： Kaoru HATANO , Akihiro Chida , Akihisa Shimomura , Shunpei Yamazaki
IPC分类号： H01L33/50
CPC分类号： H01L27/3246 , H01L51/0024 , H01L51/003 , H01L51/525 , H01L51/56
摘要： An object is to provide a method for manufacturing a light-emitting device including a flexible substrate, in which separation is performed without separation at the interface between the light-emitting layer and the electrode. A spacer formed of a light absorbing material which absorbs laser light is formed over a partition of one of substrates, a coloring layer is formed over the other substrate, and the substrates are bonded to each other with the use of a bonding layer. The light-emitting layer and the electrode which are formed over the spacer are irradiated with laser light through the coloring layer, so that at least the bonding layer among the light-emitting layer, the electrode, the coloring layer, and the bonding layer is melted to form a fixed portion where the bonding layer and the spacer are bonded by welding.
摘要翻译：本发明的目的是提供一种制造包括柔性基板的发光装置的方法，其中在发光层和电极之间的界面处进行分离而不分离。由吸收激光的吸光材料形成的间隔物形成在一个基板的隔板上，在另一个基板上形成着色层，并且通过使用接合层将基板彼此接合。通过着色层，用激光照射在间隔物上形成的发光层和电极，使得至少发光层，电极，着色层和接合层的结合层为熔化以形成固定部分，其中粘合层和间隔物通过焊接结合。

10. 发明授权

US07582162B2 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07582162B2
公开(公告)日：2009-09-01
申请号：US11600833
申请日：2006-11-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： C30B11/00 , C30B15/26 , H01L21/335
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

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