专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120211862A1 SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译： SOI衬底和制造SOI衬底的方法
公开(公告)号：US20120211862A1
公开(公告)日：2012-08-23
申请号：US13372541
申请日：2012-02-14
申请人： Masaharu NAGAI , Hideto OHNUMA , Kosei NEI
发明人： Masaharu NAGAI , Hideto OHNUMA , Kosei NEI
IPC分类号： H01L29/06 , H01L21/762 , H01L21/302
CPC分类号： H01L21/31116 , H01L21/3065 , H01L21/76254
摘要： The method for manufacturing an SOI substrate includes the following steps: forming an insulating film on a semiconductor substrate; exposing the semiconductor substrate to accelerated ions so that an embrittlement region is formed in the semiconductor substrate; bonding the semiconductor substrate to a base substrate with the insulating film interposed therebetween; separating the semiconductor substrate along the embrittlement region so that a semiconductor film is provided over the base substrate with the insulating film interposed therebetween; and forming a mask over the semiconductor film to etch part of the semiconductor film and part of the insulating film so that the periphery of the semiconductor film is on the inner side than the periphery of the insulating film.
摘要翻译： SOI衬底的制造方法包括以下步骤：在半导体衬底上形成绝缘膜; 将半导体衬底暴露于加速离子，使得在半导体衬底中形成脆化区; 将所述半导体基板与绝缘膜接合在基底基板上; 沿着所述脆化区域分离所述半导体衬底，使得半导体膜设置在所述基底衬底上，所述绝缘膜置于所述基底衬底之间; 以及在所述半导体膜上形成掩模以蚀刻所述半导体膜的一部分和所述绝缘膜的一部分，使得所述半导体膜的周边位于比所述绝缘膜的周边的内侧。

2. 发明申请

US20120122298A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：制造半导体基板的方法
公开(公告)号：US20120122298A1
公开(公告)日：2012-05-17
申请号：US13292190
申请日：2011-11-09
申请人： Kosei NEI , Akihisa SHIMOMURA
发明人： Kosei NEI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , B23K26/0006 , B23K26/354 , B23K2103/56 , H01L21/02554 , H01L21/02565 , H01L21/02675 , H01L21/84
摘要： Defects in a semiconductor substrate are reduced. A semiconductor substrate with fewer defects is manufactured with high yield. Further, a semiconductor device is manufactured with high yield. A semiconductor layer is formed over a supporting substrate with an oxide insulating layer interposed therebetween, adhesiveness between the supporting substrate and the oxide insulating layer in an edge portion of the semiconductor layer is increased, an insulating layer over a surface of the semiconductor layer is removed, and the semiconductor layer is irradiated with laser light, so that a planarized semiconductor layer is obtained. For increasing the adhesiveness between the supporting substrate and the oxide insulating layer in the edge portion of the semiconductor layer, laser light irradiation is performed from the surface of the semiconductor layer.
摘要翻译：半导体衬底的缺陷减少。具有较少缺陷的半导体衬底以高产率被制造。此外，以高产率制造半导体器件。半导体层形成在支撑基板上，隔着氧化物绝缘层，在半导体层的边缘部分中的支撑基板和氧化物绝缘层之间的粘附性增加，去除半导体层表面上的绝缘层，并用激光照射半导体层，从而获得平坦化的半导体层。为了增加半导体层的边缘部分中的支撑衬底和氧化物绝缘层之间的粘合性，从半导体层的表面进行激光照射。

3. 发明授权

US08048773B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08048773B2
公开(公告)日：2011-11-01
申请号：US12729983
申请日：2010-03-23
申请人： Shunpei Yamazaki , Masaki Koyama , Kosei Noda , Kenichiro Makino , Hideto Ohnuma , Kosei Nei
发明人： Shunpei Yamazaki , Masaki Koyama , Kosei Noda , Kenichiro Makino , Hideto Ohnuma , Kosei Nei
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1274 , C30B13/24 , C30B29/06 , C30B31/22 , C30B33/02 , C30B33/06 , H01L21/02532 , H01L21/0262 , H01L21/02675 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1281 , H01L29/66772
摘要： A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured.
摘要翻译：从单晶半导体衬底分离的单晶半导体部分地在支撑衬底上形成，其间设置有缓冲层。通过照射加速离子，通过离子照射形成脆性层，进行热处理，将单晶半导体与单晶半导体基板分离。在单晶半导体上形成非单晶半导体层，并照射待结晶的激光束，由此制造SOI衬底。

4. 发明授权

US07939426B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07939426B2
公开(公告)日：2011-05-10
申请号：US12844856
申请日：2010-07-28
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

5. 发明申请

US20100291755A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20100291755A1
公开(公告)日：2010-11-18
申请号：US12844856
申请日：2010-07-28
申请人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

6. 发明授权

US09496138B2 Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device 有权
标题翻译：氧化物半导体膜的制造方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US09496138B2
公开(公告)日：2016-11-15
申请号：US13535523
申请日：2012-06-28
申请人： Masaki Koyama , Kosei Nei , Akihisa Shimomura , Suguru Hondo , Toru Hasegawa
发明人： Masaki Koyama , Kosei Nei , Akihisa Shimomura , Suguru Hondo , Toru Hasegawa
IPC分类号： H01L21/36 , H01L21/02 , H01L29/786 , H01L29/66
CPC分类号： H01L21/02565 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02631 , H01L21/02686 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/7869
摘要： In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.
摘要翻译：在形成在绝缘表面上的氧化物半导体膜中，非晶区保持在与基极的界面附近，这被认为是导致晶体管等的特性的变化。接触氧化物半导体膜的基底表面或膜由熔点高于用于氧化物半导体膜的材料的熔点形成。因此，与接触氧化物半导体膜的基面或膜的界面附近存在结晶区域。绝缘金属氧化物用于接触氧化物半导体膜的基底表面或膜。这里使用的金属氧化物是与氧化物半导体膜的材料相同的材料的氧化铝，氧化镓等。

7. 发明授权

US08216914B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US08216914B2
公开(公告)日：2012-07-10
申请号：US12872222
申请日：2010-08-31
申请人： Masaki Koyama , Kosei Nei , Toru Hasegawa , Junpei Momo , Eiji Higa
发明人： Masaki Koyama , Kosei Nei , Toru Hasegawa , Junpei Momo , Eiji Higa
IPC分类号： H01L21/46 , H01L21/30 , H01L21/84 , H01L21/00
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/268
摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.
摘要翻译：本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜或减压气氛。发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数发射到半导体膜中的任意点的激光大于0且小于或等于2。

8. 发明授权

US07985604B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US07985604B2
公开(公告)日：2011-07-26
申请号：US12324065
申请日：2008-11-26
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/077 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on the one surface side of the single crystal semiconductor substrate. After bonding the insulating layer to a supporting substrate, the single crystal semiconductor substrate is separated with the fragile layer or its vicinity used as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. A second single crystal semiconductor layer is formed by epitaxially growing a semiconductor layer on the first single crystal semiconductor layer in accordance with a plasma CVD method in which a silane based gas and hydrogen with a flow rate 50 times or more that of the silane gas are used as a source gas. A second impurity semiconductor layer which has a conductivity type opposite to that of the first impurity semiconductor layer is formed over the second single crystal semiconductor layer. A second electrode is formed over the second impurity semiconductor layer.
摘要翻译：提供具有优异的光电转换特性的光电转换装置，同时有效地利用有限的资源。在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在第一杂质半导体层，第一电极和绝缘层上形成有脆性层单晶半导体衬底。在将绝缘层粘合到支撑基板上之后，将单晶半导体基板与用作分离平面的易碎层或其附近分离，从而在支撑基板上形成第一单晶半导体层。第二单晶半导体层是通过以等离子体CVD法在第一单晶半导体层上外延生长半导体层而形成的，其中硅烷气体和氢气的流量为硅烷气体的50倍以上用作源气体。在第二单晶半导体层上形成具有与第一杂质半导体层相反的导电类型的第二杂质半导体层。在第二杂质半导体层上形成第二电极。

9. 发明申请

US20110053384A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20110053384A1
公开(公告)日：2011-03-03
申请号：US12872222
申请日：2010-08-31
申请人： Masaki KOYAMA , Kosei NEI , Toru HASEGAWA , Junpei MOMO , Eiji HIGA
发明人： Masaki KOYAMA , Kosei NEI , Toru HASEGAWA , Junpei MOMO , Eiji HIGA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/268
摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.
摘要翻译：本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜或减压气氛。发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数发射到半导体膜中的任意点的激光大于0且小于或等于2。

10. 发明申请

US20100248444A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100248444A1
公开(公告)日：2010-09-30
申请号：US12729983
申请日：2010-03-23
申请人： Shunpei Yamazaki , Masaki Koyama , Kosei Noda , Kenichiro Makino , Hideto Ohnuma , Kosei Nei
发明人： Shunpei Yamazaki , Masaki Koyama , Kosei Noda , Kenichiro Makino , Hideto Ohnuma , Kosei Nei
IPC分类号： H01L21/762 , C30B1/02
CPC分类号： H01L27/1274 , C30B13/24 , C30B29/06 , C30B31/22 , C30B33/02 , C30B33/06 , H01L21/02532 , H01L21/0262 , H01L21/02675 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1281 , H01L29/66772
摘要： A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured.
摘要翻译：从单晶半导体衬底分离的单晶半导体部分地在支撑衬底上形成，其间设置有缓冲层。通过照射加速离子，通过离子照射形成脆性层，进行热处理，将单晶半导体与单晶半导体基板分离。在单晶半导体上形成非单晶半导体层，并照射待结晶的激光束，由此制造SOI衬底。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式