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1. 发明申请

US20110076837A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20110076837A1
公开(公告)日：2011-03-31
申请号：US12891271
申请日：2010-09-27
申请人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
发明人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
IPC分类号： H01L21/30
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
摘要翻译：证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

2. 发明申请

US20110136320A1 METHOD OF MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110136320A1
公开(公告)日：2011-06-09
申请号：US13019626
申请日：2011-02-02
申请人： Shunpei YAMAZAKI , Eiji HIGA , Yoji NAGANO , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Shunpei YAMAZAKI , Eiji HIGA , Yoji NAGANO , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007 , H01L21/268 , H01L21/302 , H01L21/84
摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.
摘要翻译：为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOL基板。用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

3. 发明申请

US20090072343A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件和电子器件
公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译：使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。而且，不用化学抛光而形成的高性能半导体器件。此外，使用该半导体器件的电子设备。包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为大于或等于1nm且小于或等于7nm。或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

4. 发明申请

US20110300690A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110300690A1
公开(公告)日：2011-12-08
申请号：US13187754
申请日：2011-07-21
申请人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
发明人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/02002 , H01L21/02038 , H01L21/3043 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L51/5206 , H01L2251/554
摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
摘要翻译：提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。具有第一突起的第一接合衬底附接到基底衬底。然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

5. 发明申请

US20100267216A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100267216A1
公开(公告)日：2010-10-21
申请号：US12824775
申请日：2010-06-28
申请人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
发明人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/02002 , H01L21/02038 , H01L21/3043 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L51/5206 , H01L2251/554
摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
摘要翻译：提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。具有第一突起的第一接合衬底附接到基底衬底。然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

6. 发明申请

US20090197392A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20090197392A1
公开(公告)日：2009-08-06
申请号：US12360419
申请日：2009-01-27
申请人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

7. 发明申请

US20100291755A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20100291755A1
公开(公告)日：2010-11-18
申请号：US12844856
申请日：2010-07-28
申请人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

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