会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Micro stage using piezoelectric element
    • 微电极采用压电元件
    • US20060131996A1
    • 2006-06-22
    • US11231471
    • 2005-09-20
    • Sang ChoiDae KimJin JeongDae Kim
    • Sang ChoiDae KimJin JeongDae Kim
    • H02N2/00
    • H02N2/028H01J2237/20264
    • Provided is a micro stage comprising: a body having a vertically perforated through-hole passing through a central portion thereof; a bobbin including a tip portion with an electron emission tip embedded in the center thereof, and passing through the through-hole of the body to be moved in the through-hole along a first axis perpendicular to a vertical direction; a first piezoelectric element disposed on the body and lengthened when a voltage is applied thereto to push the bobbin in one direction along the first axis; a second piezoelectric element disposed on the body and lengthened when a voltage is applied thereto to push the bobbin in the other direction along the first axis; and an upper cover that is coupled to an upper portion of the body and has a through-hole, through which the bobbin passes and communicates with the through-hole of the body, wherein the bobbin can be positioned as desired along the first axis by adjusting the voltages applied to the first piezoelectric element and the second piezoelectric element. Accordingly, the emission tip can be exactly and stably positioned using only the movable piezoelectric elements.
    • 提供了一种微型台,包括:主体,其具有穿过其中心部分的垂直穿孔的通孔; 线轴,其包括具有嵌入其中心的电子发射尖端的尖端部分,并沿着垂直于垂直方向的第一轴线穿过所述通孔的待通孔; 第一压电元件,其设置在所述主体上,并且当施加电压时被延长以沿着所述第一轴线沿一个方向推动所述线轴; 第二压电元件,其设置在所述主体上并且当施加电压时被延长以沿着所述第一轴线沿另一方向推动所述线轴; 以及上盖,其联接到所述主体的上部并且具有通孔,所述筒管通过所述通孔,所述通孔与所述主体的所述通孔连通,其中所述线轴可根据需要沿着所述第一轴由 调整施加到第一压电元件和第二压电元件的电压。 因此,可以仅使用可动压电元件来精确且稳定地定位发射尖端。
    • 3. 发明申请
    • Micro-column electron beam apparatus
    • 微柱电子束装置
    • US20060151716A1
    • 2006-07-13
    • US11257244
    • 2005-10-24
    • Sang ChoiDae KimJin JeongDae Kim
    • Sang ChoiDae KimJin JeongDae Kim
    • G21G5/00
    • H01J37/067B82Y10/00B82Y40/00H01J37/3177H01J2237/1205H01J2237/1502H01J2237/2818
    • Provided is a micro-column electron beam apparatus including: a base; an electron lens bracket on which an electron lens modulate can be fixed, mounted in a central portion of the base; an electron beam source tip module vertically disposed on the electron lens module; a pan spring plate stage module that is mounted over the base, supports the electron beam source tip module at a central portion thereof, and includes a three-coupling pan spring plate portion including first through third spring units that are coupled to the electron beam source tip module in three directions on a plane perpendicular to the vertical axis, which vertically passes the center of the electron beam source tip module, to elastically support the electron beam source tip module in three directions; a first piezoelectric actuator coupled to the pan spring plate stage module to move the electron beam source tip module along a first axis perpendicular to the vertical axis; and a second piezoelectric actuator coupled to the pan spring plate stage module to move the electron beam source tip module along a second axis perpendicular to the vertical axis and the first axis.
    • 本发明提供一种微柱电子束装置,包括:基底; 可以固定电子透镜调制的电子透镜支架,安装在基座的中心部分; 垂直设置在电子透镜模块上的电子束源头模块; 安装在基座上方的平板弹簧板台模块在其中心部分处支撑电子束源头模块,并且包括三联盘盘弹簧板部分,其包括耦合到电子束源的第一至第三弹簧单元 尖端模块在垂直于垂直轴线的平面上垂直通过电子束源头模块的中心,在三个方向弹性支撑电子束源头模块; 第一压电致动器,其联接到所述盘簧板模块以沿着垂直于所述垂直轴线的第一轴线移动所述电子束源尖端模块; 以及耦合到盘簧级模块的第二压电致动器,用于沿垂直于垂直轴线和第一轴线的第二轴线移动电子束源尖端模块。
    • 9. 发明授权
    • Hydrogen generating apparatus using steam reforming reaction
    • 使用蒸汽重整反应的氢发生装置
    • US08926866B2
    • 2015-01-06
    • US12734447
    • 2008-10-29
    • Il Su KimYoung Dae KimMyung Jun Kim
    • Il Su KimYoung Dae KimMyung Jun Kim
    • C01B3/38C10J3/00C01B3/48
    • C01B3/384C01B3/48C01B2203/0233C01B2203/0283C01B2203/043C01B2203/0827C01B2203/0883C01B2203/0894C01B2203/1041C01B2203/1047C01B2203/1058C01B2203/1082C01B2203/1235C01B2203/1241C01B2203/1247C01B2203/127C01B2203/1604C01B2203/1614
    • The present invention provides a hydrogen generator for generating hydrogen through a steam-reforming process using hydrocarbons as a raw material and a method of operating the same, and, more particularly, provides a hydrogen generator for generating hydrogen through a steam reforming process, which can be stably operated because water is introduced into the hydrogen generator in the form of single phase vapor, and which can achieve high thermal efficiency using a proper heat exchanging method, and to a method of operating the same. According to the present invention, there is provided a heat exchanger network, in which heat necessary for a reforming reaction are obtained by the heat exchange of high-temperature exhaust gas or reformed gas, and in which, in a water gas converting reaction and a PSA reaction conducted at low temperatures compared to the reforming reaction, heat exchange is performed by low-temperature air or water, and the heat-exchanged air and the residual gas in the PSA reaction are used as a heat supply source for the reforming reactor together with fuel hydrocarbons, thereby minimizing the thermal loss of the hydrogen generator.
    • 本发明提供了一种通过使用烃作为原料的蒸汽重整方法产生氢气的氢发生器及其操作方法,更具体地,提供了一种通过蒸汽重整过程产生氢气的氢气发生器, 由于以单相蒸汽的形式将水引入氢发生器,因此可以稳定地操作,并且可以使用适当的热交换方法来实现高的热效率,以及其操作方法。 根据本发明,提供了一种热交换器网络,其中通过高温废气或重整气体的热交换获得重整反应所需的热量,其中在水煤气转化反应和 在低温下与重整反应进行PSA反应,通过低温空气或水进行热交换,PSA反应中的热交换空气和残留气体一起用作重整反应器的供热源 与燃料烃,从而最小化氢发生器的热损失。
    • 10. 发明申请
    • EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR
    • 制造半导体设备
    • US20140209024A1
    • 2014-07-31
    • US14235901
    • 2012-07-31
    • Young Dae KimJun Jin HyonSang Ho WooSeung Woo ShinHai Won Kim
    • Young Dae KimJun Jin HyonSang Ho WooSeung Woo ShinHai Won Kim
    • H01L21/67
    • H01L21/67184C30B25/08C30B29/06C30B35/005H01L21/02046H01L21/67051H01L21/67178H01L21/67757
    • Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, a buffer chamber having a storage space for storing the substrates, and a transfer chamber to which the cleaning chamber, the buffer chamber, and the epitaxial chamber are connected to side surfaces thereof, the transfer chamber comprising a substrate handler for transferring the substrates between the cleaning chamber, the buffer chamber, and the epitaxial chamber. The substrate handler successively transfers the substrates, on which the cleaning process is completed, into the buffer chamber, transfers the substrates stacked within the buffer chamber the epitaxial chamber, and successively transfers the substrates, on which the epitaxial layers are respectively formed, into the buffer chamber.
    • 提供了一种用于制造半导体的设备。 用于制造半导体的设备包括其中对基板进行清洁处理的清洁室,其中执行在每个基板上形成外延层的外延工艺的外延室,具有用于存储的存储空间的缓冲室 所述基板和所述清洁室,所述缓冲室和所述外延室连接到其侧表面的传送室,所述传送室包括用于在所述清洁室,所述缓冲室和所述缓冲室之间传送所述基板的基板处理器 外延室。 衬底处理器将完成清洁处理的衬底连续地传送到缓冲室中,将堆叠在缓冲室内的衬底传送到外延室,并且将分别形成有外延层的衬底依次传送到 缓冲室。