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1. 发明授权

US06867426B2 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US06867426B2
公开(公告)日：2005-03-15
申请号：US09683959
申请日：2002-03-06
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L21/00 , H01L21/20 , H01L21/8238 , H01L33/00 , H01L33/30 , H01L33/32 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

2. 发明申请

US20110220873A1 LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US20110220873A1
公开(公告)日：2011-09-15
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L33/04 , H01L33/16
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

3. 发明授权

US06972208B2 Method for manufacturing a light emitting diode having a transparent substrate 有权
标题翻译：一种具有透明基板的发光二极管的制造方法
公开(公告)号：US06972208B2
公开(公告)日：2005-12-06
申请号：US10709663
申请日：2004-05-21
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L21/00 , H01L21/20 , H01L21/8238 , H01L33/00 , H01L33/30 , H01L33/32
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

4. 再颁专利

USRE42422E1 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：USRE42422E1
公开(公告)日：2011-06-07
申请号：US11724310
申请日：2007-03-15
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

5. 发明授权

US08344353B2 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US08344353B2
公开(公告)日：2013-01-01
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/019 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：本发明的一个实施例公开了一种包括发光层，非晶界面层和下电极的多层结构。发光层具有上侧，下侧和侧面。不是用于生长发光层的非晶界面层布置在下侧并且远离发光层。下电极布置在侧面并且电直接连接到非晶界面层。

6. 发明授权

US06936860B2 Light emitting diode having an insulating substrate 有权
标题翻译：具有绝缘基板的发光二极管
公开(公告)号：US06936860B2
公开(公告)日：2005-08-30
申请号：US10063822
申请日：2002-05-16
申请人： Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
发明人： Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
IPC分类号： H01L21/28 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42 , H01L33/00 , H01L29/12
CPC分类号： H01L33/04 , H01L33/14 , H01L33/325
摘要： An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.
摘要翻译： LED包括绝缘基板; 位于所述绝缘基板上的缓冲层; 位于所述缓冲层上的n + + +型接触层，所述接触层具有第一表面和第二表面; 位于n +型接触层的第一表面上的n型覆层; 定位在n型包覆层上的发光层; 位于发光层上的p型覆层; 位于p型覆层上的p型接触层; 位于p型接触层上的n + H +型反向隧穿层; 位于n + +反向隧穿层上的p型透明欧姆接触电极; 以及位于n + +型接触层的第二表面上的n型透明欧姆接触电极。 p型透明欧姆接触电极和n型透明欧姆接触电极由相同的材料制成。

7. 发明授权

US5869849A Light-emitting diodes with high illumination 失效
标题翻译：发光二极管具有高照度
公开(公告)号：US5869849A
公开(公告)日：1999-02-09
申请号：US539686
申请日：1995-10-05
申请人： Ming-Jiunn Jou , Ming-Yung Jow , Chuan-Ming Chang , Chia-Cheng Liu , Jinn-Kung Sheu , Biing-Jye Lee
发明人： Ming-Jiunn Jou , Ming-Yung Jow , Chuan-Ming Chang , Chia-Cheng Liu , Jinn-Kung Sheu , Biing-Jye Lee
IPC分类号： H01L33/00 , H01L33/02 , H01L33/14 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/02 , H01L33/14
摘要： A surface-emitting AlGaInP LED is disclosed. The LED uses a GaP layer as a window layer to eliminate the current crowding effect, or may has an ITO window layer and use GaP, instead of GaAs, as the substrate to eliminate the current-crowding effect and avoid the emitted light being absorbed by the substrate. The GaP layer is bonded to the double hetero-structure epitaxy layer by a wafer bonding technique. The present invention, however, provides a manufacturing procedure which is easier and more reliable to handle than prior arts.
摘要翻译：公开了一种表面发射AlGaInP LED。 LED使用GaP层作为窗口层来消除电流拥挤效应，或者可以具有ITO窗口层，并且使用GaP代替GaAs作为衬底以消除电流拥挤效应，并避免发射的光被底物。 GaP层通过晶片接合技术结合到双异质结构外延层。然而，本发明提供了一种比现有技术更容易和更可靠处理的制造程序。

8. 发明申请

US20100163393A1 POTENTIAL SWITCHING APPARATUS FOR POWER ADAPTER 有权
标题翻译：用于电源适配器的潜在开关装置
公开(公告)号：US20100163393A1
公开(公告)日：2010-07-01
申请号：US12346263
申请日：2008-12-30
申请人： Wen-Chi LIU , Chi-Tsung Liang , Chia-Cheng Liu
发明人： Wen-Chi LIU , Chi-Tsung Liang , Chia-Cheng Liu
IPC分类号： H01H19/20
CPC分类号： H01H9/0228 , H01H3/0213 , H01H19/58
摘要： A potential switching apparatus for a power adapter which transforms input power to output power delivered through a power output cord. The potential switch apparatus switches the potential of the output power. It includes a first body and a second body located on the power output cord. The first body has a first contact and a second contact. The second body has a switch element connectable to the first contact to deliver the output power at a first potential and connectable to the second contact to deliver the output power at a second potential. Thus the potential of the output power can be switched. The present invention improves the conventional potential switch device on the power adapter that is too bulky in size.
摘要翻译：一种用于电力适配器的潜在开关装置，其将输入功率转换成通过电力输出线输送的输出功率。电位开关装置切换输出功率的电位。它包括位于电源输出线上的第一主体和第二主体。第一机体具有第一接触和第二接触。第二主体具有可连接到第一触点的开关元件，以将输出功率输送到第一电位，并可连接到第二触点，以将输出功率输送到第二电位。因此可以切换输出功率的电位。本发明改进了尺寸太大的电源适配器上的常规电位开关装置。

9. 发明申请

US20050115492A1 Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition 审中-公开
标题翻译：用于多室外延层沉积的化学金属有机蒸气外延的方法和装置
公开(公告)号：US20050115492A1
公开(公告)日：2005-06-02
申请号：US10722522
申请日：2003-11-28
申请人： Chia-Cheng Liu , Chiung-Yu Chang , Tung-Hung Tsai , Shun-Yi Hsu , Chiu-Ming Peng
发明人： Chia-Cheng Liu , Chiung-Yu Chang , Tung-Hung Tsai , Shun-Yi Hsu , Chiu-Ming Peng
IPC分类号： C30B23/00 , C30B25/00 , C30B25/02 , C30B28/12 , C30B28/14 , C30B29/40
CPC分类号： C30B25/02 , C30B29/40
摘要： A method and the apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition can process many epitaxy reactions of the organic light-emitting diodes at the same time. More, the different types of epitaxy layers can individual react while passing through the adjustment of time periods. By using the multiple organic light-emitting diodes, it can form multiple epitaxy layers with varying types at the same time. Therefore, it achieves the purpose of shortening the manufacturing process.
摘要翻译：用于多室外延层沉积的化学金属有机蒸气外延的方法和装置可以同时处理有机发光二极管的许多外延反应。更多的是，不同类型的外延层可以通过时间段的调整而单独反应。通过使用多个有机发光二极管，可以同时形成具有不同类型的多个外延层。因此，实现缩短制造工序的目的。

10. 发明授权

US08106323B2 Potential switching apparatus for power adapter 有权
标题翻译：电源适配器的潜在开关装置
公开(公告)号：US08106323B2
公开(公告)日：2012-01-31
申请号：US12346263
申请日：2008-12-30
申请人： Wen-Chi Liu , Chi-Tsung Liang , Chia-Cheng Liu
发明人： Wen-Chi Liu , Chi-Tsung Liang , Chia-Cheng Liu
IPC分类号： H01H19/20
CPC分类号： H01H9/0228 , H01H3/0213 , H01H19/58
摘要： A potential switching apparatus for a power adapter which transforms input power to output power delivered through a power output cord. The potential switch apparatus switches the potential of the output power. It includes a first body and a second body located on the power output cord. The first body has a first contact and a second contact. The second body has a switch element connectable to the first contact to deliver the output power at a first potential and connectable to the second contact to deliver the output power at a second potential. Thus the potential of the output power can be switched. The present invention improves the conventional potential switch device on the power adapter that is too bulky in size.
摘要翻译：一种用于电力适配器的潜在开关装置，其将输入功率转换成通过电力输出线输送的输出功率。电位开关装置切换输出功率的电位。它包括位于电源输出线上的第一主体和第二主体。第一主体具有第一接触件和第二接触件。第二主体具有可连接到第一触点的开关元件，以将输出功率输送到第一电位，并可连接到第二触点，以将输出功率输送到第二电位。因此可以切换输出功率的电位。本发明改进了尺寸太大的电源适配器上的常规电位开关装置。

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