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1. 发明授权

US06936860B2 Light emitting diode having an insulating substrate 有权
标题翻译：具有绝缘基板的发光二极管
公开(公告)号：US06936860B2
公开(公告)日：2005-08-30
申请号：US10063822
申请日：2002-05-16
申请人： Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
发明人： Shu-Wen Sung , Chin-Fu Ku , Chia-Cheng Liu , Min-Hsun Hsieh , Chao-Nien Huang , Chen Ou , Chuan-Ming Chang
IPC分类号： H01L21/28 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42 , H01L33/00 , H01L29/12
CPC分类号： H01L33/04 , H01L33/14 , H01L33/325
摘要： An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.
摘要翻译： LED包括绝缘基板; 位于所述绝缘基板上的缓冲层; 位于所述缓冲层上的n + + +型接触层，所述接触层具有第一表面和第二表面; 位于n +型接触层的第一表面上的n型覆层; 定位在n型包覆层上的发光层; 位于发光层上的p型覆层; 位于p型覆层上的p型接触层; 位于p型接触层上的n + H +型反向隧穿层; 位于n + +反向隧穿层上的p型透明欧姆接触电极; 以及位于n + +型接触层的第二表面上的n型透明欧姆接触电极。 p型透明欧姆接触电极和n型透明欧姆接触电极由相同的材料制成。

2. 发明授权

US06972208B2 Method for manufacturing a light emitting diode having a transparent substrate 有权
标题翻译：一种具有透明基板的发光二极管的制造方法
公开(公告)号：US06972208B2
公开(公告)日：2005-12-06
申请号：US10709663
申请日：2004-05-21
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L21/00 , H01L21/20 , H01L21/8238 , H01L33/00 , H01L33/30 , H01L33/32
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

3. 发明授权

US08344353B2 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US08344353B2
公开(公告)日：2013-01-01
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/019 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：本发明的一个实施例公开了一种包括发光层，非晶界面层和下电极的多层结构。发光层具有上侧，下侧和侧面。不是用于生长发光层的非晶界面层布置在下侧并且远离发光层。下电极布置在侧面并且电直接连接到非晶界面层。

4. 再颁专利

USRE42422E1 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：USRE42422E1
公开(公告)日：2011-06-07
申请号：US11724310
申请日：2007-03-15
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

5. 发明申请

US20110220873A1 LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US20110220873A1
公开(公告)日：2011-09-15
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L33/04 , H01L33/16
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

6. 发明授权

US06867426B2 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US06867426B2
公开(公告)日：2005-03-15
申请号：US09683959
申请日：2002-03-06
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L21/00 , H01L21/20 , H01L21/8238 , H01L33/00 , H01L33/30 , H01L33/32 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

7. 发明申请

US20100213493A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100213493A1
公开(公告)日：2010-08-26
申请号：US12753551
申请日：2010-04-02
申请人： Tzu-Chieh HSU , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
发明人： Tzu-Chieh HSU , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
IPC分类号： H01L33/42 , H01L33/46 , H01L33/60
CPC分类号： H01L33/20 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
摘要翻译：一种发光器件，包括：具有第一导电类型半导体层的发光层叠层，形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层，其中，第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分，所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

8. 发明申请

US20070200493A1 Light-emitting apparatus 审中-公开
标题翻译：发光装置
公开(公告)号：US20070200493A1
公开(公告)日：2007-08-30
申请号：US11581439
申请日：2006-10-17
申请人： Tzu-Chieh Hsu , Ching-San Tao , Mei-Chun Liu , Mei-Lan Wu , Chen Ou , Min-Hsun Hsieh
发明人： Tzu-Chieh Hsu , Ching-San Tao , Mei-Chun Liu , Mei-Lan Wu , Chen Ou , Min-Hsun Hsieh
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L33/42 , H01L33/10 , H01L33/20 , H01L33/405
摘要： The light-emitting apparatus comprises a substrate, a first semiconductor layer formed on the substrate, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light-emitting layer, a first transparent conductive oxide layer formed on the second semiconductor layer, a reflective metal layer form on the transparent conductive oxide layer, and a first electrode formed on the reflective metal layer; characterized in that the first transparent conductive oxide layer is formed with a plurality of cavities on the interface between the first transparent conductive oxide layer and the reflective metal layer for improving the adhesion strength therebetween.
摘要翻译：发光装置包括基板，形成在基板上的第一半导体层，形成在第一半导体层上的发光层，形成在发光层上的第二半导体层，形成在第一半导体层上的第一透明导电氧化物层所述第二半导体层，在所述透明导电氧化物层上形成反射金属层，以及形成在所述反射金属层上的第一电极; 其特征在于，所述第一透明导电氧化物层在所述第一透明导电氧化物层和所述反射金属层之间的界面上形成有多个空腔，以改善其间的粘合强度。

9. 发明授权

US08405106B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08405106B2
公开(公告)日：2013-03-26
申请号：US12753551
申请日：2010-04-02
申请人： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
发明人： Tzu-Chieh Hsu , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao-Hsing Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
摘要翻译：一种发光器件，包括：具有第一导电类型半导体层的发光层叠层，形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层，其中，第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分，所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

10. 发明授权

US07095765B2 Light emitter with a voltage dependent resistor layer 有权
标题翻译：具有电压依赖电阻层的发光体
公开(公告)号：US07095765B2
公开(公告)日：2006-08-22
申请号：US10249804
申请日：2003-05-09
申请人： Wen-Huang Liu , Po-Chun Liu , Min-Hsun Hsieh , Tzu-Feng Tseng , Chen Ou
发明人： Wen-Huang Liu , Po-Chun Liu , Min-Hsun Hsieh , Tzu-Feng Tseng , Chen Ou
IPC分类号： H01S3/00 , H01L27/15
CPC分类号： H01L27/15 , H01L25/167 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/14 , H01L2924/0002 , H01L2924/00 , H01L2924/00014
摘要： A light emitter includes an emitting stack, a first electrode, a second electrode and a voltage dependent resistor layer. The emitter stack has a first surface area and a second surface area. The first electrode is formed on the first surface area of the emitting stack. The second electrode is formed on the second surface area of the emitting stack. The voltage dependent resistor layer is connected to the first and second electrodes, and is formed during the formation of the light emitter thus improving the yield of the light emitter.
摘要翻译：光发射器包括发射堆叠，第一电极，第二电极和电压依赖电阻层。发射极堆叠具有第一表面区域和第二表面区域。第一电极形成在发射堆叠的第一表面区域上。第二电极形成在发射堆叠的第二表面区域上。电压依赖电阻层连接到第一和第二电极，并且在形成发光体期间形成，从而提高发光体的产量。

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