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1. 发明申请

US20110220873A1 LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US20110220873A1
公开(公告)日：2011-09-15
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L33/04 , H01L33/16
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

2. 发明授权

US06972208B2 Method for manufacturing a light emitting diode having a transparent substrate 有权
标题翻译：一种具有透明基板的发光二极管的制造方法
公开(公告)号：US06972208B2
公开(公告)日：2005-12-06
申请号：US10709663
申请日：2004-05-21
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L21/00 , H01L21/20 , H01L21/8238 , H01L33/00 , H01L33/30 , H01L33/32
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

3. 发明授权

US06867426B2 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US06867426B2
公开(公告)日：2005-03-15
申请号：US09683959
申请日：2002-03-06
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L21/00 , H01L21/20 , H01L21/8238 , H01L33/00 , H01L33/30 , H01L33/32 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

4. 发明授权

US08344353B2 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US08344353B2
公开(公告)日：2013-01-01
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/019 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：本发明的一个实施例公开了一种包括发光层，非晶界面层和下电极的多层结构。发光层具有上侧，下侧和侧面。不是用于生长发光层的非晶界面层布置在下侧并且远离发光层。下电极布置在侧面并且电直接连接到非晶界面层。

5. 再颁专利

USRE42422E1 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：USRE42422E1
公开(公告)日：2011-06-07
申请号：US11724310
申请日：2007-03-15
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

6. 发明授权

US06552367B1 High brightness light emitting diode having a layer of distributed contacts 有权
标题翻译：具有分布接触层的高亮度发光二极管
公开(公告)号：US06552367B1
公开(公告)日：2003-04-22
申请号：US09680416
申请日：2000-10-06
申请人： Min-Hsun Hsieh , Ming-Jiunn Jou , Biing-Jye Lee
发明人： Min-Hsun Hsieh , Ming-Jiunn Jou , Biing-Jye Lee
IPC分类号： H01L3300
CPC分类号： H01L33/387 , H01L33/02 , H01L33/40 , H01L33/405
摘要： A high brightness light emitting diode having a distributed contact area comprising a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a window layer of a second conductivity type formed on the second cladding layer; a distributed contact area in a predetermined pattern formed on the window layer; a transparent conductive layer formed over the distributed contact area and the window layer, the transparent conductive layer being in ohmic contact with the distributed contact area and a Shottky barrier being formed between the transparent conductive layer and the window layer; and a second electrode formed on the transparent conductive layer.
摘要翻译：一种具有分布式接触区域的高亮度发光二极管，包括第一电极; 形成在所述第一电极上的半导体衬底; 形成在半导体衬底上的第一导电类型的第一包层; 形成在所述第一包层上的有源层; 形成在有源层上的第二导电类型的第二覆层; 形成在第二包覆层上的第二导电类型的窗口层; 形成在窗口层上的预定图案的分布式接触区域; 形成在所述分布接触区域和所述窗口层上的透明导电层，所述透明导电层与所述分布接触区域欧姆接触，并且在所述透明导电层和所述窗口层之间形成肖特基势垒; 以及形成在所述透明导电层上的第二电极。

7. 发明授权

US06225648B1 High-brightness light emitting diode 有权
标题翻译：高亮度发光二极管
公开(公告)号：US06225648B1
公开(公告)日：2001-05-01
申请号：US09352498
申请日：1999-07-09
申请人： Min-Hsun Hsieh , Ming-Jiunn Jou , Biing-Jye Lee
发明人： Min-Hsun Hsieh , Ming-Jiunn Jou , Biing-Jye Lee
IPC分类号： H01L3300
CPC分类号： H01L33/02 , H01L33/14 , H01L33/145
摘要： A high-brightness light emitting diode is provided. It comprises a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a window layer of the second conductivity type formed on the second cladding layer and having an upper surface and a bottom surface, wherein a groove of a predetermined shape is formed at a predetermined location and substantially extends from the upper surface to the bottom surface so that the window layer is substantially separated into a first window portion and a second window portion and the current in the first window portion substantially cannot flow into the second window portion; a contact layer formed on the first window portion; a transparent conductive layer consisting of a first conductive portion and a second conductive portion, wherein the first conductive portion is formed on the contact layer and an ohmic contact is formed between the first conductive portion and the contact layer, the second conductive portion contacts with the surface of the groove and the upper surface of the second window portion, and a Schottky barrier is formed between the conductive portion and the window layer; and a second electrode formed on the conductive layer at a location over the second window portion.
摘要翻译：提供了一种高亮度发光二极管。它包括第一电极; 形成在所述第一电极上的半导体衬底; 形成在半导体衬底上的第一导电类型的第一包层; 形成在所述第一包层上的有源层; 形成在有源层上的第二导电类型的第二覆层; 第二导电类型的窗口层形成在第二包层上并具有上表面和底表面，其中预定形状的沟槽形成在预定位置并且基本上从上表面延伸到底表面，使得窗口层基本上分离成第一窗口部分和第二窗口部分，并且第一窗口部分中的电流基本上不能流入第二窗口部分; 形成在所述第一窗口部分上的接触层; 由第一导电部分和第二导电部分组成的透明导电层，其中所述第一导电部分形成在所述接触层上，并且在所述第一导电部分和所述接触层之间形成欧姆接触，所述第二导电部分与所述第二导电部分接触，沟槽的表面和第二窗口部分的上表面，并且在导电部分和窗口层之间形成肖特基势垒; 以及在所述第二窗口部分上方的位置处形成在所述导电层上的第二电极。

8. 发明授权

US07161301B2 Nitride light-emitting device having an adhesive reflecting layer 有权
标题翻译：氮化物发光器件具有粘合反射层
公开(公告)号：US07161301B2
公开(公告)日：2007-01-09
申请号：US10605833
申请日：2003-10-29
申请人： Min-Hsun Hsieh , Wen-Huang Liu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Wen-Huang Liu , Ming-Jiunn Jou
IPC分类号： H05B33/00 , H01L27/15 , H01L27/00
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/46 , Y10T428/12493
摘要： A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent adhesive layer adheres the nitride light-emitting stack layer and the metal reflecting layer. Therefore, the metal reflecting layer can reflect light emitted from the light-emitting stack layer to increase the brightness of the nitride light-emitting device.
摘要翻译：具有粘合反射层的氮化物发光器件包括透明粘合剂层，氮化物发光堆叠层和金属反射层。透明粘合剂层粘附氮化物发光堆叠层和金属反射层。因此，金属反射层可以反射从发光层叠层发出的光，以增加氮化物发光器件的亮度。

9. 发明授权

US5869849A Light-emitting diodes with high illumination 失效
标题翻译：发光二极管具有高照度
公开(公告)号：US5869849A
公开(公告)日：1999-02-09
申请号：US539686
申请日：1995-10-05
申请人： Ming-Jiunn Jou , Ming-Yung Jow , Chuan-Ming Chang , Chia-Cheng Liu , Jinn-Kung Sheu , Biing-Jye Lee
发明人： Ming-Jiunn Jou , Ming-Yung Jow , Chuan-Ming Chang , Chia-Cheng Liu , Jinn-Kung Sheu , Biing-Jye Lee
IPC分类号： H01L33/00 , H01L33/02 , H01L33/14 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/02 , H01L33/14
摘要： A surface-emitting AlGaInP LED is disclosed. The LED uses a GaP layer as a window layer to eliminate the current crowding effect, or may has an ITO window layer and use GaP, instead of GaAs, as the substrate to eliminate the current-crowding effect and avoid the emitted light being absorbed by the substrate. The GaP layer is bonded to the double hetero-structure epitaxy layer by a wafer bonding technique. The present invention, however, provides a manufacturing procedure which is easier and more reliable to handle than prior arts.
摘要翻译：公开了一种表面发射AlGaInP LED。 LED使用GaP层作为窗口层来消除电流拥挤效应，或者可以具有ITO窗口层，并且使用GaP代替GaAs作为衬底以消除电流拥挤效应，并避免发射的光被底物。 GaP层通过晶片接合技术结合到双异质结构外延层。然而，本发明提供了一种比现有技术更容易和更可靠处理的制造程序。

10. 发明授权

US5300791A Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US5300791A
公开(公告)日：1994-04-05
申请号：US953659
申请日：1992-09-29
申请人： Tzer-Perng Chen , Chin-Yuan Chen , Jyi-Ren Deng , Ming-Jiunn Jou , Biing-Jye Lee , Jenn-Yu Kao
发明人： Tzer-Perng Chen , Chin-Yuan Chen , Jyi-Ren Deng , Ming-Jiunn Jou , Biing-Jye Lee , Jenn-Yu Kao
IPC分类号： H01L33/02 , H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14
摘要： A light emitting diode is provided with a window layer of ZnSSe semiconductor material having a second conductivity type. The second conductivity type ZnSSe window layer has a low electrical resistivity so that it can be used as a current spreading layer, and a bandgap higher than that of the active layer so that it is transparent to light emitted from the active layers. The second conductivity type ZnSSe window layer can be doped with a donor concentration of more than 10.sup.18 cm.sup.-3. Furthermore, its lattice constant is close to that of the active layers and confining layers so that deterioration in optical characteristic due to lattice mismatch is minimized.
摘要翻译：发光二极管设置有具有第二导电类型的ZnSSe半导体材料的窗口层。第二导电型ZnSSe窗层具有低电阻率，使得其可以用作电流扩散层，并且具有比有源层高的带隙，使得其对于从有源层发射的光是透明的。第二导电型ZnSSe窗口层可以以大于1018cm-3的供体浓度掺杂。此外，其晶格常数接近有源层和限制层的晶格常数，使得由于晶格失配导致的光学特性的劣化被最小化。

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