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1. 发明授权

US06603269B1 Resonant chamber applicator for remote plasma source 失效
标题翻译：用于远程等离子体源的谐振室施加器
公开(公告)号：US06603269B1
公开(公告)日：2003-08-05
申请号：US09593586
申请日：2000-06-13
申请人： Be Van Vo , Salvador P. Umotoy , Son N. Trinh , Lawrence Chung-Lai Lei , Sergio Edelstein , Avi Tepman , Chien-Teh Kao , Kenneth Tsai
发明人： Be Van Vo , Salvador P. Umotoy , Son N. Trinh , Lawrence Chung-Lai Lei , Sergio Edelstein , Avi Tepman , Chien-Teh Kao , Kenneth Tsai
IPC分类号： C23C1600
CPC分类号： H01J37/32192
摘要： An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.
摘要翻译：提供了用于远程产生用于半导体制造的等离子体的改进的等离子体施加器。在一个实施例中，等离子体施加器由腔室组件，可移除波导适配器和将适配器固定到腔室组件的圆形夹具构成。腔室组件包括孔板，微波透明窗，室主体和安装在腔体上的微波传感器。室主体具有适于将微波能量引入空腔中的近端开口，以及大致位于与近端开口相反的空腔相对侧的远端。腔体还具有气体出口端口，其适于允许将激发气体流出空腔，气体入口端口适于将前体气体引入空腔。气体入口具有中心轴线，该中心轴线设置在腔室主体的近端开口和本体的近端开口和远端之间的中点之间。

2. 发明授权

US06461435B1 Showerhead with reduced contact area 有权
标题翻译：淋浴头接触面积减小
公开(公告)号：US06461435B1
公开(公告)日：2002-10-08
申请号：US09603117
申请日：2000-06-22
申请人： Karl A. Littau , Bevan Vo , Salvador P. Umotoy , Son N. Trinh , Chien-Teh Kao , Ken Kaung Lai , Bo Zheng , Ping Jian , Siqing Lu , Anzhong Chang
发明人： Karl A. Littau , Bevan Vo , Salvador P. Umotoy , Son N. Trinh , Chien-Teh Kao , Ken Kaung Lai , Bo Zheng , Ping Jian , Siqing Lu , Anzhong Chang
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455 , H01J37/3244
摘要： A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.
摘要翻译：用于在半导体处理室中分配气体的喷头。在一个实施例中，提供了一种喷头，包括穿孔中心部分，围绕穿孔中心部分的安装部分和从安装部分延伸的多个凸起，每个凸起具有穿过其中设置的孔。本发明的另一个实施例提供了一种喷头，其包括具有围绕穿孔中心部分的第一侧面的安装部分。环从安装部分的第一侧延伸。多个安装孔径向地设置在安装部分的环的任一侧。淋浴头在喷头和室盖之间提供受控的热转印，从而在喷头上沉积较少。

3. 发明授权

US5766365A Removable ring for controlling edge deposition in substrate processing apparatus 失效
标题翻译：用于控制基板处理装置中的边缘沉积的可拆卸环
公开(公告)号：US5766365A
公开(公告)日：1998-06-16
申请号：US472220
申请日：1995-06-07
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/68 , H01L21/683 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/6833 , H01L21/68735 , H01L21/68792
摘要： A substrate processing apparatus comprising a processing chamber in which a substrate support is located. The substrate support, which is in the form of a heater pedestal, has a surface dimensioned to receive the substrate, and is circumscribed by a removable purge ring which defines an annulus between itself and the pedestal. At the outer edge of the pedestal is a purge gas manifold, in the form of a cavity between the purge ring and the pedestal. The lower end of the manifold is sealed by means of a mechanical seal that is formed at process temperature as the pedestal expands from heating and comes into contact with the purge ring's lower edge. The upper end of the manifold opens into the annulus defined by the purge ring and the pedestal. The manifold is arranged so that during processing, purge gas is injected into the manifold and projected toward the edge of a substrate received on the surface of the pedestal. This gas moves upwards through the annulus defined between the purge ring and the substrate support. Consequently, processing gas is prevented from contacting the extreme edge portion of the substrate. This reduces unwanted deposition on the peripheral edge and lower surface of the substrate.
摘要翻译：一种基板处理装置，包括其中位于基板支撑件的处理室。处于加热器基座形式的衬底支撑件具有尺寸适于接收衬底的表面，并且由可拆卸的清除环限定，该清除环在其与底座之间限定环形空间。在基座的外边缘处是净化气体歧管，其形式为清洗环和基座之间的空腔。歧管的下端通过机械密封进行密封，机械密封在工艺温度下形成，因为基座从加热膨胀并与清洗环的下边缘接触。歧管的上端开口进入由清洗环和基座限定的环形空间。歧管被布置成使得在处理期间，吹扫气体被注入到歧管中并且朝着接收在基座的表面上的基板的边缘突出。该气体向上移动通过清洗环和衬底支撑件之间限定的环形空间。因此，防止处理气体与基板的最外缘部分接触。这减少了衬底的外围边缘和下表面上的不希望的沉积。

4. 发明授权

US5888304A Heater with shadow ring and purge above wafer surface 失效
标题翻译：加热器带有阴影环并在晶片表面上方吹扫
公开(公告)号：US5888304A
公开(公告)日：1999-03-30
申请号：US626789
申请日：1996-04-02
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/46
摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.
摘要翻译：本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。

5. 发明授权

US06827815B2 Showerhead assembly for a processing chamber 失效
标题翻译：用于处理室的喷头组件
公开(公告)号：US06827815B2
公开(公告)日：2004-12-07
申请号：US10047076
申请日：2002-01-15
申请人： Mark M. Hytros , Truc T. Tran , Hongbee Teoh , Lawrence Chung-Lai Lei , Avgerinos Gelatos , Salvador P. Umotoy
发明人： Mark M. Hytros , Truc T. Tran , Hongbee Teoh , Lawrence Chung-Lai Lei , Avgerinos Gelatos , Salvador P. Umotoy
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.
摘要翻译：提供了一种用于在处理室内分配气体的喷头组件。在一个实施例中，喷头组件包括具有与其连接的面板的圆柱形构件。圆柱形构件在第一端具有向外延伸的第一凸缘。面板联接到圆柱形构件的第二端，并且具有通过面板的中心区域形成的多个孔。当受到热应力时，圆柱形构件和面板之间的接合允许相对移动。在另一个实施例中，至少一个夹紧构件将面板保持在圆柱形构件的第二端。

6. 发明授权

US06517592B2 Cold trap assembly 有权
标题翻译：冷阱装配
公开(公告)号：US06517592B2
公开(公告)日：2003-02-11
申请号：US09740120
申请日：2000-12-19
申请人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
IPC分类号： B01D4508
CPC分类号： B01D8/00 , C23C16/4412 , Y10S55/15 , Y10S55/30
摘要： A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.
摘要翻译：具有冷阱能力的温度控制排气组件。排气组件的一个实施例包括允许独立的多区域闭环温度控制的多加热器设计。另一个实施例包括紧凑的多阀单体设计，其包括用于简化闭环温度控制的单个加热器。冷阱包含一个加热器，用于在陷阱入口进行温度控制，以尽量减少不必要的沉积物。一个实施例还包括多级冷阱和颗粒捕集器。作为可拆卸单元，该冷阱在吸附的可冷凝物的处理和处理中提供了额外的安全性。

7. 发明授权

US06364954B2 High temperature chemical vapor deposition chamber 有权
标题翻译：高温化学气相沉积室
公开(公告)号：US06364954B2
公开(公告)日：2002-04-02
申请号：US09211998
申请日：1998-12-14
申请人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4405 , C23C16/4412 , C23C16/45514 , C23C16/45574 , C23C16/4584 , C23C16/5096
摘要： An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700° C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250° C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65° C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products. External heaters are used to maintain the exhaust assembly at a temperature of about 150-200° C. to minimize undesirable deposits on the interior surfaces of the exhaust assembly.
摘要翻译：一种用于晶片处理的装置，其包括通过隔离销彼此热隔离的室主体和加热衬套。在晶片加工期间，例如通过四氯化钛和氨之间的热反应沉积氮化钛膜，通过加热的支撑基座将晶片基板加热至600-700℃范围内的反应温度。腔室衬里和内部室壁保持在150-250℃之间的温度，以防止在室内沉积不期望的副产物。这有助于室清洁程序，其可以使用原位氯基方法进行。加热的衬套和腔体之间的良好的隔热能使室外保持在60-65℃的安全工作温度。加热排气组件还与处理室结合使用以除去废气和反应副产品。使用外部加热器将排气组件保持在约150-200℃的温度下，以使排气组件的内表面上的不期望的沉积物最小化。

8. 发明授权

US07705275B2 Substrate support having brazed plates and resistance heater 有权
标题翻译：具有钎焊板和电阻加热器的基板支撑
公开(公告)号：US07705275B2
公开(公告)日：2010-04-27
申请号：US11506460
申请日：2006-08-17
申请人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Gwo-chun Tzu , Xiangxiong (John) Yuan , Michael S. Jackson , Hymam Lam
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Gwo-chun Tzu , Xiangxiong (John) Yuan , Michael S. Jackson , Hymam Lam
IPC分类号： A21B1/22
CPC分类号： H01L21/67103 , C23C16/45521 , C23C16/4586 , C23C16/466 , H01L21/6838 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.
摘要翻译：衬底支撑件包括钎焊在一起的顶板，中板和底板。顶板具有顶表面，多个向外突出的台面分散在凹槽中，凹槽网络，终止于凹槽中的真空端口以及多个气体端口。中间板具有与顶板的相应的顶部馈通对准的多个中间馈通，并且底板具有与中间板的中间馈通对准的多个底部馈通。顶板和中间板通过第一钎焊接合层连接，中间和底板通过第二钎焊接合层连接。

9. 发明授权

US06206971B1 Integrated temperature controlled exhaust and cold trap assembly 有权
标题翻译：集成温度控制排气和冷阱组件
公开(公告)号：US06206971B1
公开(公告)日：2001-03-27
申请号：US09281998
申请日：1999-03-29
申请人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
IPC分类号： C23C1600
CPC分类号： B01D8/00 , C23C16/4412 , Y10S55/15 , Y10S55/30
摘要： A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.
摘要翻译：具有冷阱能力的温度控制排气组件。排气组件的一个实施例包括允许独立的多区域闭环温度控制的多加热器设计。另一个实施例包括紧凑的多阀单体设计，其包括用于简化闭环温度控制的单个加热器。冷阱包含一个加热器，用于在陷阱入口进行温度控制，以尽量减少不必要的沉积物。一个实施例还包括多级冷阱和颗粒捕集器。作为可拆卸单元，该冷阱在吸附的可冷凝物的处理和处理中提供了额外的安全性。

10. 发明授权

US08821637B2 Temperature controlled lid assembly for tungsten nitride deposition 有权
标题翻译：用于氮化钨沉积的温度控制盖组件
公开(公告)号：US08821637B2
公开(公告)日：2014-09-02
申请号：US12021825
申请日：2008-01-29
申请人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
发明人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4411 , C23C16/45512 , C23C16/45523
摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.
摘要翻译：本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

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