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1. 发明授权

US09059000B2 Methods and structures for protecting one area while processing another area on a chip 有权
公开(公告)号：US09059000B2
公开(公告)日：2015-06-16
申请号：US12106586
申请日：2008-04-21
申请人： Deok-kee Kim , Kenneth T. Settlemyer, Jr. , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
发明人： Deok-kee Kim , Kenneth T. Settlemyer, Jr. , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
IPC分类号： H01L21/027 , H01L21/033 , H01L21/311 , G03F7/11
CPC分类号： H01L21/0337 , G03F7/11 , H01L21/027 , H01L21/0332 , H01L21/0334 , H01L21/0338 , H01L21/31144
摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.

2. 发明申请

US20130017486A1 PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用抗反射材料制作光刻结构的方法
公开(公告)号：US20130017486A1
公开(公告)日：2013-01-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/004 , B32B7/02 , B32B27/06 , G03F7/20
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本上透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

3. 发明授权

US08293454B2 Process of making a lithographic structure using antireflective materials 有权
标题翻译：使用抗反射材料制作平版印刷结构的工艺
公开(公告)号：US08293454B2
公开(公告)日：2012-10-23
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： B32B9/04 , G03F7/075
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

4. 发明授权

US07175966B2 Water and aqueous base soluble antireflective coating/hardmask materials 有权
标题翻译：水和水性可溶性抗反射涂层/硬掩模材料
公开(公告)号：US07175966B2
公开(公告)日：2007-02-13
申请号：US10666541
申请日：2003-09-19
申请人： Katherina E Babich , Alfred Grill , Arpan P Mahorowala , Dirk P Pfeiffer
发明人： Katherina E Babich , Alfred Grill , Arpan P Mahorowala , Dirk P Pfeiffer
IPC分类号： G03F7/00 , G03F7/075 , G03F7/11
CPC分类号： G03F7/11 , G03F7/075 , G03F7/091 , G03F7/167
摘要： A multilayer lithographic structure which includes a substrate, having on a major surface thereof a first layer including a water and/or aqueous base soluble material which includes Ge, O, and H, and optionally X, wherein X is at least one of Si, N, and F; and disposed on the first layer a second layer which includes an energy photoactive material.
摘要翻译：一种多层光刻结构，其包括基底，其主要表面上具有第一层，该第一层包括水和/或水溶性基质可溶性材料，其包括Ge，O和H以及任选的X，其中X是Si， N和F; 并且在第一层上设置包括能量光活性材料的第二层。

5. 发明授权

US06869899B2 Lateral-only photoresist trimming for sub-80 nm gate stack 失效
标题翻译：用于sub-80nm栅极叠层的仅横向光刻胶修剪
公开(公告)号：US06869899B2
公开(公告)日：2005-03-22
申请号：US09902727
申请日：2001-07-12
申请人： Arpan P. Mahorowala , Maheswaran Surendra , Jung H. Yoon , Ying Zhang
发明人： Arpan P. Mahorowala , Maheswaran Surendra , Jung H. Yoon , Ying Zhang
IPC分类号： H01L21/28 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/28123 , H01L21/32137 , H01L21/32139 , Y10S438/945 , Y10S438/947 , Y10S438/949 , Y10S438/95
摘要： The invention relates generally to lithographic patterning of very small features. In particular, the invention relates generally to patterning of semiconductor circuit features smaller than lithographically defined using either conventional optical lithography or next generation lithography techniques. The invention relates more particularly, but not by way of limitation, to lateral trimming of photoresist images.
摘要翻译：本发明一般涉及非常小的特征的平版印刷图案。特别地，本发明一般涉及使用常规光刻或下一代光刻技术小于光刻定义的半导体电路特征的图案化。本发明更具体地但非限制性地涉及光致抗蚀剂图像的横向修整。

6. 发明授权

US06780736B1 Method for image reversal of implant resist using a single photolithography exposure and structures formed thereby 有权
标题翻译：使用单一光刻曝光和由此形成的结构的植入物抗蚀剂的图像反转方法
公开(公告)号：US06780736B1
公开(公告)日：2004-08-24
申请号：US10604009
申请日：2003-06-20
申请人： Steven J. Holmes , Toshiharu Furukawa , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Steven J. Holmes , Toshiharu Furukawa , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： H01L21425
CPC分类号： H01L21/26513 , H01L21/823814
摘要： A method for image reversal in semiconductor processing includes forming a first implant mask layer upon a semiconductor substrate and forming a patterned photoresist layer over the first implant mask layer. Portions of the first implant mask layer not covered by the patterned photoresist layer are removed so as to expose non-patterned portions of the substrate. The photoresist layer is then removed, and a second implant mask layer is formed over the non-patterned portions of the substrate, wherein the first implant mask layer has an etch selectivity with respect to the second implant mask layer. The remaining portions of the first implant mask layer are removed to expose a reverse image of the substrate, including initially patterned portions of the substrate.
摘要翻译：半导体处理中的图像反转方法包括在半导体衬底上形成第一注入掩模层并在第一注入掩模层上形成图案化的光致抗蚀剂层。去除未被图案化光致抗蚀剂层覆盖的第一注入掩模层的部分，以暴露衬底的未图案化部分。然后去除光致抗蚀剂层，并且在衬底的非图案化部分上形成第二注入掩模层，其中第一注入掩模层相对于第二注入掩模层具有蚀刻选择性。去除第一注入掩模层的剩余部分以暴露衬底的反向图像，包括衬底的初始图案化部分。

7. 发明授权

US07968270B2 Process of making a semiconductor device using multiple antireflective materials 有权
标题翻译：制造使用多种抗反射材料的半导体器件的工艺
公开(公告)号：US07968270B2
公开(公告)日：2011-06-28
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/11 , G03F7/40
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

8. 发明申请

US20090061355A1 PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用抗反射材料制作光刻结构的方法
公开(公告)号：US20090061355A1
公开(公告)日：2009-03-05
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/004 , C08G77/04 , G03F7/20 , B32B27/00
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

9. 发明申请

US20080311508A1 PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用多种抗反射材料制备半导体器件的工艺
公开(公告)号：US20080311508A1
公开(公告)日：2008-12-18
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/20 , C23C16/00 , G03C1/735 , G03C1/73
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

10. 发明申请

US20080128388A1 Method and apparatus for multilayer photoresist dry development 有权
标题翻译：用于多层光致抗蚀剂干式显影的方法和装置
公开(公告)号：US20080128388A1
公开(公告)日：2008-06-05
申请号：US11970062
申请日：2008-01-07
申请人： Vaidyanathan BALASUBRAMANIAM , Koichiro INAZAWA , Rie INAZAWA , Rich WISE , Arpan P. MAHOROWALA , Siddhartha PANDA
发明人： Vaidyanathan BALASUBRAMANIAM , Koichiro INAZAWA , Rie INAZAWA , Rich WISE , Arpan P. MAHOROWALA , Siddhartha PANDA
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01L21/31138
摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
摘要翻译：一种用于在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氨（NH 3）和钝化气体的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。例如，工艺气体可以构成NH 3和烃气体，例如C 2 H 4 H 4，CH _{，C 4 H 6，C 4 H 8，C 4 H C 5，C 5 H 8，C 5 H 10，C 5，C 5， C 6 H 6，C 6 H 10和C 6 H 12 。另外，工艺化学可以进一步包括添加氦。本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氨（NH 3 3）的工艺气体和钝化气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。}

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