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81. 发明授权

US4371885A Charge coupled device improved meander channel serial register 失效
标题翻译：电荷耦合器件改善曲折通道串行寄存器
公开(公告)号：US4371885A
公开(公告)日：1983-02-01
申请号：US274994
申请日：1981-06-18
申请人： William J. Parrish , James L. Gates
发明人： William J. Parrish , James L. Gates
IPC分类号： H01L27/148 , H01L29/10 , H01L29/423 , H01L29/768 , H01L29/78 , G11C19/28 , H01L29/04
CPC分类号： H01L29/42396 , H01L27/14875 , H01L29/1062 , H01L29/76875
摘要： A meander channel charge couple device having a pair of parallel colinear elongate electrodes extending longitudinally along the length of the register disposed over a meander channel and formed in the same conductive layer so that they both reside at the same height above the semiconductor substrate, thereby providing a symmetrical surface potential distribution. Charge transfer instabilities beneath a gap separating the electrodes are eliminated by providing an additional set of electrodes, each extending transversely to the meander channel and to the first pair of parallel electrodes and spanning the gap. Contact is made by each of the longitudinal electrode pairs to alternate ones of the transverse electrodes and a two-phase clock system is applied to the longitudinal electrode pair.
摘要翻译：曲折通道电荷耦合器件具有一对沿着寄存器长度纵向延伸设置在曲折通道上并且形成在相同导电层中的平行线形细长电极，使得它们都位于半导体衬底上方的相同高度处，从而提供对称表面电位分布。通过提供一组额外的电极来消除分离电极的间隙下方的电荷转移不稳定性，每组电极横向于曲折通道和第一对平行电极延伸并跨越间隙。由纵向电极对中的每个横向电极交替地形成接触，并且将两相时钟系统施加到纵向电极对。

82. 发明授权

US4227202A Dual plane barrier-type two-phase CCD 失效
标题翻译：双平面障壁型两相CCD
公开(公告)号：US4227202A
公开(公告)日：1980-10-07
申请号：US846009
申请日：1977-10-27
申请人： Al F. Tasch, Jr. , Pallab K. Chatterjee
发明人： Al F. Tasch, Jr. , Pallab K. Chatterjee
IPC分类号： H01L29/762 , H01L21/339 , H01L29/10 , H01L29/423 , H01L29/768 , H01L29/78 , G11C19/28 , H01L29/04
CPC分类号： H01L29/1062 , H01L29/42396 , H01L29/76833 , H01L29/76866 , Y10S148/147
摘要： A charge coupled device having geometries suitable for fabrication in high density packages (64,000 bits per chip--1,000,000 bits per chip) is comprised of a semiconductor substrate having dopant impurity atoms of a first type and a first surface. A charge transfer channel lies in the substrate near the first surface; and it is overlaid by an insulating layer of non-uniform thickness. A plurality of first and second electrodes lie on the insulating layer traversely to the channel. A barrier region of dopant impurity atoms of the first type lies under each of the electrodes. The non-uniform insulating layer underlies each of the first electrodes by a first uniform thickness, underlies the second electrodes by a second uniform thickness, and separates the each of the first and second electrodes by approximately the second thickness. The second thickness is 20%-60% greater than the first thickness to greatly reduce inter-electrode shorts in high density packages. A shallow layer of dopant atoms of a second type opposite to the first type may be provided under the second electrodes to compensate for flatband voltage shifts due to the thick insulating layer.
摘要翻译：具有适合制造高密度封装（每芯片64,000位，每芯片1,000,000位）的几何形状的电荷耦合器件由具有第一类型和第一表面的掺杂杂质原子的半导体衬底组成。电荷转移通道位于第一表面附近的衬底中; 并且被非均匀厚度的绝缘层覆盖。多个第一和第二电极横跨于通道位于绝缘层上。第一类型的掺杂剂杂质原子的势垒区位于每个电极的下方。每个第一电极以不均匀的厚度位于第一电极下方的第一均匀绝缘层的第二均匀厚度位于第二电极下方，并且将第一和第二电极中的每一个分开大约第二厚度。第二厚度比第一厚度大20％-60％，以大大减少高密度封装中的电极间短路。可以在第二电极的下方提供与第一类型相反的第二类型的掺杂剂原子的浅层，以补偿由于厚的绝缘层引起的扁平带电压偏移。

83. 发明授权

US4097885A Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material 失效
标题翻译：紧凑的两相电荷耦合器件结构，利用多层导电材料
公开(公告)号：US4097885A
公开(公告)日：1978-06-27
申请号：US732614
申请日：1976-10-15
申请人： Lloyd R. Walsh
发明人： Lloyd R. Walsh
IPC分类号： H01L29/762 , H01L21/339 , H01L29/423 , H01L29/768 , H01L29/78 , G11C19/28
CPC分类号： H01L29/66954 , H01L29/42396 , H01L29/76875
摘要： An improved charge-coupled-device gate structure utilizes three depositions of electrically conductive material to form electrodes, thereby allowing fabrication of two-phase CCD gate structures occupying less wafer surface area and operating at faster speeds than conventional charge-coupled-device gate structures.
摘要翻译：改进的电荷耦合器件栅极结构利用导电材料的三个沉积形成电极，从而允许制造占据较少晶片表面积并以比传统电荷耦合器件栅极结构更快的速度工作的两相CCD栅极结构。

84. 发明授权

US4060796A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4060796A
公开(公告)日：1977-11-29
申请号：US758447
申请日：1977-01-11
申请人： Ryoiku Togei , Akira Takei , Yoshihiko Hika , Kunihiko Wada
发明人： Ryoiku Togei , Akira Takei , Yoshihiko Hika , Kunihiko Wada
IPC分类号： G11C11/35 , H01L21/3205 , H01L27/07 , H01L27/108 , H01L29/423 , H01L29/49 , G11C11/40
CPC分类号： H01L27/0733 , G11C11/35 , H01L21/32055 , H01L27/10805 , H01L29/42396 , H01L29/4983
摘要： A semiconductor memory device provided with one transferring electrode, one gate electrode and one diode of a charge coupled device is produced by a process with a reduced number of steps of diffusion and patterning. Both electrodes consists of doped polycrystalline silicon and both are electrically connected to a resistive layer which consists of non-doped polycrystalline silicon. A potential barrier between the region of both electrodes is removed due to the resistive layer. Resistive layer is formed by utilization of a two-stage deposition of the polycrystalline silicon layer with appropriate mashing steps.
摘要翻译：设置有电荷耦合器件的一个转移电极，一个栅极电极和一个二极管的半导体存储器件通过具有减少的扩散步骤和图案化步骤的工艺产生。两个电极由掺杂的多晶硅组成，并且它们都电连接到由非掺杂多晶硅组成的电阻层。由于电阻层，两个电极的区域之间的势垒被去除。通过利用适当的糖化步骤的多晶硅层的两级沉积形成电阻层。

85. 发明授权

US4041521A Shift array for pattern information processing device utilizing charge coupled semiconductor device 失效
标题翻译：利用电荷耦合半导体器件的图形信息处理装置的移位阵列
公开(公告)号：US4041521A
公开(公告)日：1977-08-09
申请号：US298569
申请日：1972-10-18
申请人： Hideo Sunami , Yokichi Itoh , Fumiyuki Inose , Yoshiaki Kamigaki
发明人： Hideo Sunami , Yokichi Itoh , Fumiyuki Inose , Yoshiaki Kamigaki
IPC分类号： G11C27/04 , H01L21/339 , H01L27/105 , H01L29/423 , H01L29/762 , H01L29/78
CPC分类号： H01L27/1057 , H01L29/42396
摘要： A shift array for shifting carriers introduced into a semiconductor body toward the X-direction and Y-direction comprises an insulating layer disposed on the semiconductor body, first electrodes disposed on the insulating layer and arranged in a matrix on the X-Y plane, second electrodes disposed between adjacent first electrodes, conductors disposed adjacent to the first electrodes to be connected to the electrodes of each row when carriers are transferred toward the Y-direction, conductors disposed adjacent to the first electrodes to be connected to the electrodes of each column when carriers are transferred toward the X-direction. When carriers are transferred toward the X-direction, the second electrodes disposed between the adjacent first electrodes of each column are biased with a DC voltage whose electrical polarity is reversed relative to the DC voltage applied to the first electrodes for preventing the transit of carriers toward the Y-direction. When carriers are transferred toward the Y-direction, the second electrodes disposed between the adjacent first electrodes of each row are biased with a DC voltage whose polarity is reversed relative to the DC voltage applied to the first electrodes for preventing the transit of carriers toward the X-direction.
摘要翻译：用于将引入半导体本体的载流子移动到X方向和Y方向的移位阵列包括设置在半导体本体上的绝缘层，设置在绝缘层上并以矩阵形式布置在XY平面上的第一电极，第二电极设置在相邻的第一电极之间，当载体朝着Y方向转移时，邻近第一电极设置的导体设置成与每行的电极连接，当载体为载体时，与第一电极邻近设置的导体连接到每列的电极向X方向转移。当载体向X方向转移时，设置在每列的相邻第一电极之间的第二电极被以直流电压偏置，该DC电压的电极性相对于施加到第一电极的DC电压反转，以防止载流子朝向 Y方向。当载体朝向Y方向转移时，设置在每行的相邻第一电极之间的第二电极被以直流电压偏置，该直流电压的极性相对于施加到第一电极的直流电压而相反，以防止载流子朝向 X方向。

86. 发明授权

US4032947A Controllable charge-coupled semiconductor device 失效
标题翻译：可控充电耦合半导体器件
公开(公告)号：US4032947A
公开(公告)日：1977-06-28
申请号：US538124
申请日：1975-01-02
申请人： Guenther Kesel , Reinhard Losehand
发明人： Guenther Kesel , Reinhard Losehand
IPC分类号： G11C11/35 , G11C11/39 , H01L27/108 , H01L29/423 , H01L29/78 , H01L27/10 , H01L27/15 , H01L29/48
CPC分类号： H01L29/42396 , G11C11/35 , G11C11/39 , H01L27/108
摘要： A charge-coupled device comprising a plurality of rows and columns of capacitively coupled electrodes are provided in which information can be read in by applying signals to certain of the electrodes and storing them in discrete individual elements of the matrix and wherein rapid read-out may be accomplished and wherein the stored charges need not be transferred through a long line or chain of charge-coupled elements. A three-axis embodiment provides for storage elements with three mutually coupled electrodes for receiving inputs and storing information which can be read out as desired.

87. 发明授权

US3987312A Device for the selective storage of charges and for selective charge shift in both directions with a charge-coupled charge shift arrangement 失效
标题翻译：用于选择性地存储电荷并且利用电荷耦合电荷移位装置在两个方向上进行选择性电荷移位的装置
公开(公告)号：US3987312A
公开(公告)日：1976-10-19
申请号：US583287
申请日：1975-06-03
申请人： Ulrich Ablassmeier
发明人： Ulrich Ablassmeier
IPC分类号： G11C27/04 , G11C19/28 , H01L29/423 , H01L29/768 , G11C11/34 , H03K25/02
CPC分类号： H01L29/76891 , G11C19/282 , G11C19/287 , H01L29/42396 , H01L29/76875
摘要： A device for selectively shifting charges in a given direction, or in the opposite direction, and for storing charges selectively employs a charge coupled charge shift arrangement having a substrate of doped semiconductor material, an electrical insulating layer on the substrate and at least one row of first electrodes on the insulating layer which are separated from one another by gaps and at least one row of second electrodes arranged at least over each gap and insulated from the first electrodes. In addition to contacts for introducing and withdrawing charges, first contact lines connect each first electrode to alternate ones of the first electrodes in the row and second contact lines connect each second electrode to alternate ones of the second electrodes in the row. Each of the contact lines which serves to connect the first electrodes is capacitively connected to the contact lines which serve to connect the second electrodes directly adjacent on the one side of the first electrodes. Either of the two contact lines which serve to connect the first electrodes or the other two contact lines are provided with a terminal for receiving respective pulse trains. A d.c. voltage supply is connected by way of a commutator switch to the first and second contact lines, the commutator switch having two closed and an open switch condition. The contact lines which are not provided with terminals for receiving pulse trains are each connected by way of an on-off switch to a further terminal of an electrical supply and the substrate is connected to another supply terminal.
摘要翻译：用于选择性地沿给定方向或相反方向移动电荷并用于存储电荷的装置选择性地使用具有掺杂半导体材料的衬底的电荷耦合电荷移位装置，衬底上的电绝缘层和至少一行绝缘层上的第一电极通过间隙彼此分开，并且至少一排第二电极至少布置在每个间隙上并与第一电极绝缘。除了用于引入和取出电荷的触点之外，第一接触线将每个第一电极连接到行中的交替的第一电极，并且第二接触线将每个第二电极连接到该行中的另一个第二电极。用于连接第一电极的每个接触线与用于连接第一电极的一侧上直接相邻的第二电极的接触线电容连接。用于连接第一电极或其他两个接触线的两个接触线中的任一个设置有用于接收各个脉冲串的端子。一个d.c. 电压源通过换向器开关连接到第一和第二接触线路，换向器开关具有两个闭合和断开状态。未设置用于接收脉冲串的端子的接触线各自通过开 - 关开关连接到电源的另一端子，并且衬底连接到另一个电源端子。

88. 发明授权

US3967254A Charge transfer memory 失效
标题翻译：电荷转移记忆
公开(公告)号：US3967254A
公开(公告)日：1976-06-29
申请号：US524830
申请日：1974-11-18
申请人： Walter Frank Kosonocky , Donald Jon Sauer
发明人： Walter Frank Kosonocky , Donald Jon Sauer
IPC分类号： G11C27/04 , G11C19/28 , G11C19/36 , H01L21/339 , H01L27/105 , H01L27/148 , H01L29/423 , H01L29/762 , H03H11/26 , G11C11/40
CPC分类号： G11C19/287 , G11C19/282 , G11C19/36 , H01L27/1057 , H01L29/42396
摘要： Output gate electrode structure between the storage matrix and the output register of a serial-parallel-serial (SPS) charge coupled device (CCD) memory. To permit high channel packing density in the matrix, the output register can have as few as M/N stages, where M is the number of channels in the matrix and N the number of phases employed for operating the register. The gate structure transfers 1/N'th of a word at a time to the output register and while this 1/N'th of a word is being propagated out of the register, the remaining part (or parts), if any, of the word are stored while the gate structure provides a potential barrier between this stored charge and the register.
摘要翻译：存储矩阵与串并联串行（SPS）电荷耦合器件（CCD）存储器的输出寄存器之间的输出栅电极结构。为了允许矩阵中的高通道封装密度，输出寄存器可以具有少至M / N级，其中M是矩阵中的通道数，N是用于操作寄存器的相位数。门结构一次将1 / N的字数传送到输出寄存器，而当该字的1 / N是从寄存器传播出来时，剩下的部分（或部分）（如果有的话）当门结构在该存储的电荷与寄存器之间提供潜在的屏障时，该字被存储。

89. 发明授权

US3943543A Three level electrode configuration for three phase charge coupled device 失效
标题翻译：三相电荷耦合器件的三电平配置
公开(公告)号：US3943543A
公开(公告)日：1976-03-09
申请号：US492111
申请日：1974-07-26
申请人： John Millard Caywood
发明人： John Millard Caywood
IPC分类号： H01L23/482 , H01L29/423 , H01L29/768 , H01L29/78 , H01L23/48 , H01L29/44
CPC分类号： H01L29/42396 , H01L23/4824 , H01L29/76883 , H01L2924/0002
摘要： The specification discloses a three level electrode configuration for a charge coupled device having a channel for movement of charge packets therethrough. The configuration includes three spaced apart phase buses disposed parallel along one side of the channel. Sets of phase electrodes extend from each of the phase buses across the channel. Adjacent ones of the phase electrodes from different phase buses are formed on different levels and have laterally offset and overlapping edges. Insulation layers are disposed between the phase electrodes on different levels.
摘要翻译：本说明书公开了一种用于电荷耦合器件的三电平电极配置，其具有用于通过其中的电荷包的移动的通道。该配置包括沿着通道的一侧平行布置的三个间隔开的相位总线。相电极组从每个相位总线跨越通道延伸。来自不同相位总线的相邻电极形成在不同的水平上并且具有横向偏移和重叠的边缘。绝缘层设置在不同电平的相电极之间。

90. 发明授权

US3934261A Two-dimensional transfer in charge transfer devices 失效
标题翻译：电荷转移装置二维转移
公开(公告)号：US3934261A
公开(公告)日：1976-01-20
申请号：US549759
申请日：1975-02-13
申请人： Carlo Heinrich Sequin
发明人： Carlo Heinrich Sequin
IPC分类号： G11C19/28 , H01L27/105 , H01L29/10 , H01L29/423 , H01L29/78
CPC分类号： H01L27/1057 , G11C19/282 , H01L29/1062 , H01L29/42396
摘要： Charge transfer devices of either the charge coupled or bucket brigade type are described which allow movement of charge carriers in two noncollinear directions in the surface plane of the device. One level of metallization is utilized to provide the appropriate surface potential for charge transfer in the storage medium.The electrode pattern comprises charge transfer electrodes which are coupled diagonally to one of a plurality of conduction paths. Directionally is aided by asymmetric potentials under each electrode which may be formed by localized regions of fixed charge at the surface of the storage medium. Horizontal or vertical transfer is determined by the sequence of biasing the conductive paths. In one embodiment, the electrode pattern is formed by strips of conductive material shaped in the form of diagonally overlapping quadrilateral members and positioned so as to form an array resembling the normal two-dimensional array of discrete transfer electrodes.
摘要翻译：描述了电荷耦合或斗式旅行类型的电荷转移装置，其允许电荷载体在装置的表面平面中的两个非共线方向上移动。使用一层金属化来提供适当的表面电位用于存储介质中的电荷转移。

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