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1. 发明授权

US3943543A Three level electrode configuration for three phase charge coupled device 失效
标题翻译：三相电荷耦合器件的三电平配置
公开(公告)号：US3943543A
公开(公告)日：1976-03-09
申请号：US492111
申请日：1974-07-26
申请人： John Millard Caywood
发明人： John Millard Caywood
IPC分类号： H01L23/482 , H01L29/423 , H01L29/768 , H01L29/78 , H01L23/48 , H01L29/44
CPC分类号： H01L29/42396 , H01L23/4824 , H01L29/76883 , H01L2924/0002
摘要： The specification discloses a three level electrode configuration for a charge coupled device having a channel for movement of charge packets therethrough. The configuration includes three spaced apart phase buses disposed parallel along one side of the channel. Sets of phase electrodes extend from each of the phase buses across the channel. Adjacent ones of the phase electrodes from different phase buses are formed on different levels and have laterally offset and overlapping edges. Insulation layers are disposed between the phase electrodes on different levels.
摘要翻译：本说明书公开了一种用于电荷耦合器件的三电平电极配置，其具有用于通过其中的电荷包的移动的通道。该配置包括沿着通道的一侧平行布置的三个间隔开的相位总线。相电极组从每个相位总线跨越通道延伸。来自不同相位总线的相邻电极形成在不同的水平上并且具有横向偏移和重叠的边缘。绝缘层设置在不同电平的相电极之间。

2. 发明授权

US3944849A Charge transfer device signal processing 失效
标题翻译：电荷转移装置信号处理
公开(公告)号：US3944849A
公开(公告)日：1976-03-16
申请号：US483328
申请日：1974-06-26
申请人： Al Felix Tasch, Jr. , John Millard Caywood
发明人： Al Felix Tasch, Jr. , John Millard Caywood
IPC分类号： G11C27/04 , H01L29/768 , H03K17/14 , H01L27/10 , G08C15/08 , H01L31/00
CPC分类号： G11C27/04 , H01L29/76808 , H03K17/145
摘要： An input scheme suitable for low-level input signals, e.g., from an IR detector array, wherein the input signals are transferred over respective channels to parallel inputs of a charge transfer device shift register, under control of IGFET switching transistor circuits in each channel. Corresponding IGFETS in the channels are operated by common gate voltages. Introduction of noise due to variation of the gate threshold voltages between IGFETS in the transfer circuits is obviated by using the same IGFET in each channel to reset the potential at the input node of that channel as well as to transfer the input signals over that channel to the shift register.
摘要翻译：适用于低电平输入信号的输入方案，例如来自IR检测器阵列，其中在每个通道中的IGFET开关晶体管电路的控制下，输入信号通过相应的通道传送到电荷转移装置移位寄存器的并行输入。通道中相应的IGFETS由公共栅极电压操作。通过在每个通道中使用相同的IGFET来消除由于转移电路中IGFETS之间的栅极阈值电压变化导致的噪声的引入，以复位该通道的输入节点处的电位以及通过该通道将输入信号传输到移位寄存器。

3. 发明授权

US3934161A Electronic shutter for a charge-coupled imager 失效
标题翻译：用于电荷耦合成像器的电子快门
公开(公告)号：US3934161A
公开(公告)日：1976-01-20
申请号：US465198
申请日：1974-04-29
申请人： John Millard Caywood
发明人： John Millard Caywood
IPC分类号： H01L27/148 , H04N5/353 , H04N5/372 , H01L31/08
CPC分类号： H01L27/14887 , H01L27/14831 , H04N3/1556
摘要： The disclosure relates to a system for controlling the total charge collected on a charge-coupled imager to, in effect, provide an electronic shuttering action for the charge-coupled imager. The charge-coupled imager works in standard fashion and is normally biased into depletion whereby minority carriers, generated by the light impinging on the imager, are collected in predetermined charge collecting areas or wells, the charges in each well then bring read out in a serial fashion. In order to prevent collection of an excess number of charges, which is equivalent to overexposure in a photographic sense, the majority carriers which are necessarily generated simultaneously with the minority carriers, are collected and integrated so that when a predetermined amount of charge is measured, a shuttering action can take place. When the basic imager is formed from p-type silicon, the majority carrier charges are collected by providing an ohmic contact to the p-type substrate. Two modes ofoperation are disclosed. The first mode is suitable for imaging applications and the second mode is suitable for laser warning receivers.
摘要翻译：本公开涉及一种用于控制在电荷耦合成像器上收集的总电荷的系统，实际上为电荷耦合成像器提供电子快门动作。电荷耦合成像器以标准方式工作，并且通常偏向于耗尽，由入射到成像器上的光产生的少数载体被收集在预定的收集区域或井中，然后每个阱中的电荷以串行方式读出时尚。为了防止收集过多的电荷，这相当于照相意义上的过度曝光，必须与少数载体同时产生的多数载流子被收集和积分，使得当测量预定量的电荷时，可以进行快门动作。当基本成像器由p型硅形成时，通过向p型衬底提供欧姆接触来收集多数载流子电荷。公开了两种操作模式。第一种模式适用于成像应用，第二种模式适用于激光警报接收器。

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