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    • 1. 发明授权
    • Thyristor
    • 晶闸管
    • US4942444A
    • 1990-07-17
    • US48603
    • 1979-06-14
    • Ulrich Ablassmeier
    • Ulrich Ablassmeier
    • H01L27/06H01L21/822H01L27/08H01L29/417H01L29/74H01L29/749
    • H01L29/749H01L27/0817H01L29/41716
    • The invention herein disclosed relates to a thyristor of the MOS control type. The thyristor has a series of semiconductor layers of varying conductibility types lying above one another in which the semiconductor layers lying at the ends of the series are provided with end-side electrodes and in which a part of the surface of the next-to-the-last layer not covered by the last layer is charged with a control voltage supplied via a control terminal. A power-saving control is obtained in thyristors of this type. This objective is attained in that a region of the surface of the next-to-the-last layer not covered by the last layer is covered with a thin, insulating layer on which a gate connected with a control terminal is arranged. Next to the edge of the last layer, a zone exhibiting the same conductibility type as this last layer is formed which completely penetrates the next-to-the-last layer.
    • 本文公开的本发明涉及一种MOS控制型晶闸管。 晶闸管具有一系列不同导电类型的半导体层,这些半导体层位于彼此之间,其中位于串联端部的半导体层设置有端侧电极,并且其中一部分表面的一部分 最后一层不覆盖的层被带有通过控制端提供的控制电压。 在这种晶闸管中获得节能控制。 该目的的实现是,未被最后层覆盖的下一层的表面的区域被薄的绝缘层覆盖,其上布置有与控制端子连接的栅极。 在最后一层的边缘之后,形成完全穿透下一层到最后层的具有与该最后层相同的导电性类型的区域。
    • 2. 发明授权
    • Device for the selective storage of charges and for selective charge
shift in both directions with a charge-coupled charge shift arrangement
    • 用于选择性地存储电荷并且利用电荷耦合电荷移位装置在两个方向上进行选择性电荷移位的装置
    • US3987312A
    • 1976-10-19
    • US583287
    • 1975-06-03
    • Ulrich Ablassmeier
    • Ulrich Ablassmeier
    • G11C27/04G11C19/28H01L29/423H01L29/768G11C11/34H03K25/02
    • H01L29/76891G11C19/282G11C19/287H01L29/42396H01L29/76875
    • A device for selectively shifting charges in a given direction, or in the opposite direction, and for storing charges selectively employs a charge coupled charge shift arrangement having a substrate of doped semiconductor material, an electrical insulating layer on the substrate and at least one row of first electrodes on the insulating layer which are separated from one another by gaps and at least one row of second electrodes arranged at least over each gap and insulated from the first electrodes. In addition to contacts for introducing and withdrawing charges, first contact lines connect each first electrode to alternate ones of the first electrodes in the row and second contact lines connect each second electrode to alternate ones of the second electrodes in the row. Each of the contact lines which serves to connect the first electrodes is capacitively connected to the contact lines which serve to connect the second electrodes directly adjacent on the one side of the first electrodes. Either of the two contact lines which serve to connect the first electrodes or the other two contact lines are provided with a terminal for receiving respective pulse trains. A d.c. voltage supply is connected by way of a commutator switch to the first and second contact lines, the commutator switch having two closed and an open switch condition. The contact lines which are not provided with terminals for receiving pulse trains are each connected by way of an on-off switch to a further terminal of an electrical supply and the substrate is connected to another supply terminal.
    • 用于选择性地沿给定方向或相反方向移动电荷并用于存储电荷的装置选择性地使用具有掺杂半导体材料的衬底的电荷耦合电荷移位装置,衬底上的电绝缘层和至少一行 绝缘层上的第一电极通过间隙彼此分开,并且至少一排第二电极至少布置在每个间隙上并与第一电极绝缘。 除了用于引入和取出电荷的触点之外,第一接触线将每个第一电极连接到行中的交替的第一电极,并且第二接触线将每个第二电极连接到该行中的另一个第二电极。 用于连接第一电极的每个接触线与用于连接第一电极的一侧上直接相邻的第二电极的接触线电容连接。 用于连接第一电极或其他两个接触线的两个接触线中的任一个设置有用于接收各个脉冲串的端子。 一个d.c. 电压源通过换向器开关连接到第一和第二接触线路,换向器开关具有两个闭合和断开状态。 未设置用于接收脉冲串的端子的接触线各自通过开 - 关开关连接到电源的另一端子,并且衬底连接到另一个电源端子。
    • 3. 发明授权
    • Regenerator stage for CCD arrangements
    • 用于CCD安排的再生器级
    • US4139782A
    • 1979-02-13
    • US726672
    • 1976-09-27
    • Ulrich Ablassmeier
    • Ulrich Ablassmeier
    • G11C27/04G11C19/28H01L21/339H01L29/76H01L29/762H01L29/768H01L29/772H01L29/78
    • G11C19/285H01L29/76825
    • A stage useful as either a differential amplifier or a regenerator for a charge coupled device is disclosed herein. The stage is arranged on a substrate for the charge coupled device and adjacent the pulsable electrodes of first and second planes of an electrical insulating layer over the substrate. The stage has a diffusion zone which is oppositely doped to the substrate. Adjacent the diffusion zone the first electrode is arranged in the first plane of the insulating layer. Adjacent the first electrode a large-area second electrode is arranged. Adjacent the second electrode a first plane third electrode, a second plane fourth electrode, and a first plane fifth electrode are arranged, a fifth electrode being positioned adjacent one of the pulsable electrodes of the charge coupled device.
    • 本文公开了可用作电荷耦合器件的差分放大器或再生器的阶段。 该台被布置在用于电荷耦合器件的衬底上并且与衬底上的电绝缘层的第一和第二平面的脉动电极相邻。 该阶段具有相对于衬底掺杂的扩散区。 邻近扩散区,第一电极布置在绝缘层的第一平面中。 在第一电极附近设置大面积的第二电极。 与第二电极相邻设置有第一平面第三电极,第二平面第四电极和第一平面第五电极,第五电极位于电荷耦合器件的一个脉动电极附近。