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1. 发明申请

US20090181501A1 METHOD FOR MANUFACTURING A CHARGE COUPLED DEVICE 失效
标题翻译：制造充电耦合器件的方法
公开(公告)号：US20090181501A1
公开(公告)日：2009-07-16
申请号：US12352799
申请日：2009-01-13
申请人： Hirokazu Sekine , Shu Sasaki
发明人： Hirokazu Sekine , Shu Sasaki
IPC分类号： H01L21/77 , H01L21/266
CPC分类号： H01L21/2652 , H01L29/76816 , H01L29/76875
摘要： A method for manufacturing a semiconductor device includes steps of forming an embedded channel 12 in a semiconductor substrate 11, forming a resist layer on the embedded channel 12 through an oxide film 14, exposing the resist layer using a grating mask the light transmissivity of which varies toward transfer directions of electric charges, developing the exposed resist layer to form a resist mask having a gradient, forming a first impurity region 13 having a concentration gradient by injecting ions into the embedded channel 12 through the resist mask, and arranging transfer electrodes 15 at prescribed positions on the first impurity region 13 through the oxide film 14 after removing the resist mask, wherein a potential profile becomes deeper toward the transfer directions of the electric charges.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底11中形成嵌入沟道12，通过氧化物膜14在嵌入沟道12上形成抗蚀剂层，使用其透光率变化的光栅掩模曝光抗蚀剂层显影电荷的转移方向，显影曝光的抗蚀剂层以形成具有梯度的抗蚀剂掩模，通过通过抗蚀剂掩模将离子注入到嵌入通道12中形成具有浓度梯度的第一杂质区域13，并将转移电极15设置在在除去抗蚀剂掩模之后通过氧化膜14在第一杂质区13上的规定位置，其中电位分布朝向电荷的传送方向变深。

2. 发明授权

US5556801A Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes 失效
标题翻译：制造具有边缘对准植入物和互连电极的平面电荷耦合器件的方法
公开(公告)号：US5556801A
公开(公告)日：1996-09-17
申请号：US376699
申请日：1995-01-23
申请人： Gilbert A. Hawkins , Robert L. Nielsen
发明人： Gilbert A. Hawkins , Robert L. Nielsen
IPC分类号： H01L27/148 , H01L21/339 , H01L29/10 , H01L29/762 , H01L29/768 , H01L21/265 , H01L21/70 , H01L27/00
CPC分类号： H01L29/66954 , H01L29/1062 , H01L29/76875
摘要： A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform insulative layer; then implanting ions of a second conductivity type into the substrate, then patterning closely spaced strips of a first conductive layer on the insulative layer, then further implanting ions of a second conductivity type in the regions between said first conductive strips, then depositing uniformly a second conductive layer electrically isolated from the first conductive strips, then entirely removing by uniform planarization those portions of the second conductive layer disposed over regions of the first conductive strips so as to form closely spaced, coplanar, alternating first and second electrically isolated conductive strips, then electrically connecting alternate pairs of strips by a planar process of depositing and oxidizing a conductive material.
摘要翻译：制造完全自对准的平面两相电荷耦合器件的方法包括以下步骤：首先在半导体衬底上形成均匀的绝缘层; 然后将第二导电类型的离子注入到衬底中，然后对绝缘层上的第一导电层的紧密间隔的条纹进行图案化，然后在第一导电条之间的区域中进一步注入第二导电类型的离子，导电层与第一导电带电隔离，然后通过均匀平坦化完全去除设置在第一导电条的区域上的第二导电层的那些部分，以便形成紧密间隔开的共面交替的第一和第二电绝缘导电条，然后通过沉积和氧化导电材料的平面过程电连接交替的条带对。

3. 发明授权

US4259598A Charge transfer signal processing apparatus transversal filter 失效
标题翻译：电荷转移信号处理装置横向滤波器
公开(公告)号：US4259598A
公开(公告)日：1981-03-31
申请号：US105756
申请日：1979-12-20
申请人： Jerome J. Tiemann , William E. Engeler
发明人： Jerome J. Tiemann , William E. Engeler
IPC分类号： G11C19/28 , G11C27/04 , H01L29/768 , H03H15/02 , H01L29/78
CPC分类号： H01L29/76875 , G11C19/285 , G11C27/04 , H01L29/76808 , H03H15/02
摘要： A sampled data transversal filter utilizing charge transfer devices is described. The filter includes a charge transfer shift register including a plurality of stages to which a sequence of packets of charge representing samples of a signal is serially applied and clocked from stage to stage. Charge division and collection means are provided at the various stages of the shift register to divide and collect the fractions of charge appearing in the various stages thereof. These fractions represent the weighting coefficients of the various stages of the shift register. The charge collection means of the various stages are connected together to provide an output representing the sum of the charges collected at the various stages. The output sequence of packets of charge obtained represent the convolution of the input sequence of packets with the weighting coefficients of the various stages of the shift register.
摘要翻译：描述了利用电荷转移装置的采样数据横向滤波器。滤波器包括电荷转移移位寄存器，该电荷转移移位寄存器包括多个阶段，表示一个信号样本的电荷分组序列被顺序地施加到该阶段并且从一个阶段到另一阶段计时。在移位寄存器的各个阶段提供充电分配和收集装置，以分割和收集其各阶段出现的电荷分数。这些分数表示移位寄存器的各个级的加权系数。各级的电荷收集装置连接在一起以提供表示在各个阶段收集的电荷之和的输出。获得的电荷包的输出序列表示输入的分组序列与移位寄存器的各个级的加权系数的卷积。

4. 发明授权

US4156247A Two-phase continuous poly silicon gate CCD 失效
标题翻译：两相连续多晶硅栅极CCD
公开(公告)号：US4156247A
公开(公告)日：1979-05-22
申请号：US750774
申请日：1976-12-15
申请人： John M. Hartman , George S. Leach
发明人： John M. Hartman , George S. Leach
IPC分类号： H01L21/321 , H01L21/3215 , H01L21/339 , H01L29/423 , H01L29/768 , H01L29/78 , B01J17/00 , G11C19/28 , H01L29/04
CPC分类号： H01L29/66954 , H01L21/321 , H01L21/32155 , H01L29/42396 , H01L29/76875
摘要： This invention provides the structure for a two-phase charge coupled storage device. Alternate regions of thicker and thinner silicon dioxide are grown upon a silicon substrate. These silicon dioxide regions are covered with a layer of deposited, undoped polysilicon. A layer of silicon dioxide is grown over the polysilicon. Ion implantation is applied to cause isolated regions of conductivity in the polysilicon. Then contact windows are cut in the upper most layer of silicon dioxide exposing the polysilicon therethrough and a metal coating is deposited in the contact windows. Two-phase signals are applied to the resulting electrodes to advance charges at the surface of the silicon substrate.
摘要翻译：本发明提供了两相电荷耦合存储装置的结构。较厚和较薄的二氧化硅的替代区域生长在硅衬底上。这些二氧化硅区域被一层沉积的未掺杂的多晶硅覆盖。在多晶硅上生长一层二氧化硅。应用离子注入来引起多晶硅中的隔离导电性区域。然后，将接触窗口切割成暴露多晶硅的最上层的二氧化硅，并且在接触窗口中沉积金属涂层。对所得电极施加两相信号，以在硅衬底的表面上推进电荷。

5. 发明授权

US4027381A Silicon gate ccd structure 失效
标题翻译：硅栅ccd结构
公开(公告)号：US4027381A
公开(公告)日：1977-06-07
申请号：US691656
申请日：1976-06-01
申请人： Al F. Tasch, Jr. , Robert C. Frye
发明人： Al F. Tasch, Jr. , Robert C. Frye
IPC分类号： H01L21/285 , H01L21/339 , H01L21/8234 , H01L29/10 , H01L29/768 , B01J17/00
CPC分类号： H01L29/66954 , H01L21/28525 , H01L21/823406 , H01L29/1062 , H01L29/76875
摘要： Processes for manufacturing two-phase charge coupled devices (CCDs) having marginally overlapping phase electrodes and utilizing a single insulating material. Offset self-alignment techniques are used to achieve accurate location of ion implanted potential well or potential barrier regions to achieve the required asymmetry of potential wells (or threshold voltages) in each gate region of the CCD with small bit or charge storage element sizes leading to structures having a high packing density. Fabrication of surface and buried channel structures is described.
摘要翻译：制造具有边缘相邻电极并利用单一绝缘材料的两相电荷耦合器件（CCD）的工艺。偏移自对准技术用于实现离子注入势阱或势垒区域的精确定位，以实现具有小位或电荷存储元件尺寸的CCD的每个栅极区域中的势阱（或阈值电压）所需的不对称性，导致具有高填充密度的结构。描述了表面和掩埋通道结构的制造。

6. 发明授权

US4001861A Double-layer, polysilicon, two-phase, charge coupled device 失效
标题翻译：双层，多晶硅，两相，充电耦合器件
公开(公告)号：US4001861A
公开(公告)日：1977-01-04
申请号：US406052
申请日：1973-10-12
申请人： James E. Carnes
发明人： James E. Carnes
IPC分类号： H01L29/768 , H01L31/0224 , H01L29/78 , H01L29/04
CPC分类号： H01L31/022408 , H01L29/76875
摘要： In a two-phase, charge-coupled device having alternate rows of internal andverlapping external electrodes, the external electrodes are fabricated from polysilicon instead of aluminum as heretofore, the internal electrodes also being of polysilicon. Sets of corresponding electrodes are then connected to a bus bar at each end, each bus bar for the same set of corresponding electrodes carrying the same phase, or clocking, signal.

7. 发明授权

US3932882A Charge transfer device 失效
标题翻译：电荷转移装置
公开(公告)号：US3932882A
公开(公告)日：1976-01-13
申请号：US517717
申请日：1974-10-24
申请人： Josef Berger
发明人： Josef Berger
IPC分类号： H01L21/00 , H01L29/423 , H01L29/43 , H01L29/768 , H01L29/78
CPC分类号： H01L29/76875 , H01L21/00 , H01L29/42396 , H01L29/435
摘要： A two-phase semiconductor charge transfer device is constructed using electrodes which include both a highly resistive region and a highly conductive region. An array of such electrodes is overlayed on an insulating layer which has been deposited onto a semiconductor substrate. Alternate phases of an applied two-phase voltage source are applied to alternate electrodes in the array, thereby generating an electrical potential distribution in the semiconductor. Charge, in the form of minority carriers in the semiconductor, is stored in the minima of the potential distribution. When the voltage phases are pulsed, the potential in the regions beneath the highly conductive parts of the electrodes almost instantaneously changes value. However, in the regions beneath the highly resistive parts of the electrodes, the potential changes value much more slowly. As the potential varies, charge is transferred from the region under one electrode to the region under an adjacent electrode. The slower variation in the potential under the resistive regions provides a "potential shoulder" which prevents backward spilling of the charge in an undesired direction. Thus, directionality is imparted to the charge transfer.
摘要翻译：使用包括高电阻区域和高导电区域的电极来构造两相半导体电荷转移装置。这种电极的阵列覆盖在已经沉积在半导体衬底上的绝缘层上。施加的两相电压源的交替相位被施加到阵列中的交替电极，从而在半导体中产生电势分布。以半导体中的少数载流子的形式的电荷被存储在电势分布的最小值中。当电压相被脉冲时，电极的高导电部分下面的区域中的电位几乎瞬间改变了值。然而，在电极的高电阻部分下方的区域中，电位变化值要慢得多。随着电位变化，电荷从一个电极下的区域转移到相邻电极下的区域。电阻区域下的电位变化较慢提供了一个“潜在的肩部”，其防止电荷在不期望的方向上反向溢出。因此，方向性被赋予电荷转移。

8. 发明授权

US3921195A Two and four phase charge coupled devices 失效
标题翻译：两相和四相充电耦合器件
公开(公告)号：US3921195A
公开(公告)日：1975-11-18
申请号：US45850774
申请日：1974-04-08
申请人： BELL TELEPHONE LABOR INC
发明人： SMITH GEORGE ELWOOD , STRAIN ROBERT JOSEPH
IPC分类号： G11C19/28 , G11C27/04 , H01L27/105 , H01L29/423 , H01L29/49 , H01L29/768 , H01L27/10 , H01L29/78
CPC分类号： H01L29/76875 , G11C19/282 , G11C27/04 , H01L27/1057 , H01L29/42396 , H01L29/495 , H01L29/76883 , H01L29/76891 , Y10S148/02 , Y10S148/049 , Y10S148/053 , Y10S148/122
摘要： A Charge Coupled Device (CCD) structure employing two levels of electrode metallization. The field plate electrodes are arranged in pairs with the second one of each pair partially overlapping and insulated from the first one of its pair and the first one of the next pair. The structure can be operated two-phase or fourphase with four electrodes per bit and three-phase with three electrodes per bit by providing suitable amounts of electrode overlap and suitable drive circuitry. A particularly advantageous mode of two-phase operation with four electrodes per bit is enabled by providing asymmetrical overlapping of electrodes, the second electrode of each pair overlapping the first electrode of its pair more than the first electrode of the next pair.

9. 发明授权

US3913122A Charge-coupled device and method of fabrication of the device 失效
标题翻译：充电耦合器件和器件的制造方法
公开(公告)号：US3913122A
公开(公告)日：1975-10-14
申请号：US42914973
申请日：1973-12-28
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： BOREL JOSEPH , LACOUR JACQUES , MERCKEL GERARD
IPC分类号： H01L29/10 , H01L29/768 , H01L29/78
CPC分类号： H01L29/76875 , H01L29/1062
摘要： A charge-coupled device in which the storage and transfer of information in the form of charges consisting of minority carriers are carried out with only two clocks. The device comprises a doped semiconductor substrate coated with an insulating thin film carrying a linear series of conductive electrodes. A variably doped surface region of the substrate creates a potential barrier for the minority carriers upstream of a charge-storage region. The same value of potential is fixed respectively for the odd-numbered electrodes and for the evennumbered electrodes, these values being modified in cycles so as to transfer the charge from each alternate electrode to one of the adjacent electrodes. A method of fabrication of the device consists in forming an insulating film and an assembly of conductive electrodes on a semiconductor substrate and in ion implantation by means of an ion beam in order to increase the doping of the substrate beneath one edge of the electrodes.

10. 发明授权

US3908262A Process for the production of a two-phase charge shift arrangement for charge coupled devices 失效
标题翻译：用于生产电荷耦合器件的两相电荷移位装置的方法
公开(公告)号：US3908262A
公开(公告)日：1975-09-30
申请号：US49326774
申请日：1974-07-31
申请人： SIEMENS AG
发明人： STEIN KARL-ULRICH
IPC分类号： H01L29/762 , H01L21/00 , H01L21/339 , H01L29/10 , H01L29/423 , H01L29/768 , B01J17/00
CPC分类号： H01L29/76875 , H01L21/00 , H01L29/1062 , H01L29/42396 , H01L29/768 , Y10S148/051 , Y10S148/143
摘要： A process for the production of a two-phase charge shift arrangement for a charge coupled device with a doping barrier which includes forming an electrically insulating layer on a semiconductor substrate, forming a metal layer on said insulating layer, covering said metal layer with a photo-resist layer, selectively etching said photo-resist layer and through said metal layer to provide a row of electrodes, the etching operation including under-etching the photo-resist layer at each gap to provide a wider gap in the electrode than in the photo-resist, the ratio of the width of the gap in the photo-resist to the total gap height being approximately 1:1, and then irradiating the gaps with an ion beam directed at an oblique angle to the surface of the substrate to cause ions to be implanted in the substrate below one edge region of each electrode and in the substrate below a portion of the bottom of the gap adjacent said one side edge of each said electrode.
摘要翻译：一种用于制造具有掺杂势垒的电荷耦合器件的两相电荷移位装置的方法，包括在半导体衬底上形成电绝缘层，在所述绝缘层上形成金属层，用照片覆盖所述金属层选择性地蚀刻所述光致抗蚀剂层并通过所述金属层提供一排电极，所述蚀刻操作包括在每个间隙处蚀刻光致抗蚀剂层以在电极中提供比在照片中更宽的间隙抗蚀剂中，光刻胶中的间隙的宽度与总间隙高度之比约为1:1，然后用与衬底表面倾斜的倾斜角的离子束照射间隙，使离子被植入在每个电极的一个边缘区域下方的衬底中，并且在衬底中的与每个所述电极的所述一个侧边缘相邻的间隙的底部的一部分下方。

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