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    • 81. 发明申请
    • SUBSTRATE TRANSFER APPARATUS
    • 基板传送装置
    • US20120219390A1
    • 2012-08-30
    • US13462908
    • 2012-05-03
    • Katsushi KishimotoYusuke FukuokaHiroyuki TadokoroYusuke Ozaki
    • Katsushi KishimotoYusuke FukuokaHiroyuki TadokoroYusuke Ozaki
    • B65G65/00
    • H01L21/67748H01L21/67784
    • A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space therebetween, each of the guide plates having a substrate-placing surface on which a substrate is to be placed, and a plurality of floating-gas ejecting holes for floating the substrate with use of a gas; a gas supplying source for supplying the floating gas to the respective guide plates; and an arm for transferring the floated substrate from the guide plate, from which the substrate is to be transferred, to the adjacent guide plate to which the substrate is to be transferred, wherein the substrate-placing surface of the guide plate to which the substrate is to be transferred is situated lower than the substrate-placing surface of the guide plate from which the substrate is to be transferred.
    • 一种基板传送装置,包括:彼此相邻的多个浮动传送导向板,其间具有空间,每个导板具有其上将放置基板的基板放置表面,以及多个浮动导电板 排出用于使用气体漂浮基板的孔; 气体供给源,用于将浮动气体供给到各个导向板; 以及用于将浮动的基板从基板被转印的导向板传送到要被转印的基板的相邻引导板的臂,其中基板的基板放置表面与基板 要被转印的位置低于从基板被转印的导向板的基板放置表面。
    • 82. 发明申请
    • Method and Apparatus for Thermally Processing Plastic Discs, in particular Mould Wafers
    • 用于热处理塑料盘的方法和装置,特别是模具晶片
    • US20120107757A1
    • 2012-05-03
    • US13058816
    • 2009-08-06
    • Erich Reitinger
    • Erich Reitinger
    • F27D15/02
    • H01L21/67784H01L21/67109H01L21/6838
    • The present invention provides a method and apparatus for thermally processing plastic discs, in particular mould wafers. The method comprises the following steps: clamping a mould wafer (15) at a first temperature (T1) on a first clamping device (5; 50), the first temperature (T1) being below the hardening temperature (TH) of the plastic of the mould wafer (15); heating the mould wafer (15) clamped on the first clamping device (5; 50) to a second temperature (T2), which is higher than the first temperature (T1) and is above the hardening temperature (TH); ending the clamping on the first clamping device (5; 50) and transporting the mould wafer (15) heated to the second temperature (T2) from the first clamping device (5; 50) to a second clamping device (9; 90) substantially contactlessly; clamping the heated mould wafer (15) on the second clamping device (9; 90); cooling the mould wafer (15) clamped on the second clamping device (9; 90) down to a third temperature (T4), which is lower than the second temperature (T2) and is below the hardening temperature (TH); and ending the clamping on the second clamping device (9; 90).
    • 本发明提供了一种用于热处理塑料盘,特别是模具晶片的方法和装置。 该方法包括以下步骤:在第一夹紧装置(5; 50)上夹持第一温度(T1)的模具晶片(15),第一温度(T1)低于塑料的硬化温度(TH) 模具晶片(15); 将夹在第一夹紧装置(5; 50)上的模具晶片(15)加热到高于第一温度(T1)并高于硬化温度(TH)的第二温度(T2); 结束在第一夹紧装置(5; 50)上的夹紧并将加热到第二温度(T2)的模具晶片(15)从第一夹持装置(5; 50)传送到第二夹紧装置(9; 90) 无接触地 将加热的模具晶片(15)夹紧在第二夹紧装置(9; 90)上; 将夹紧在第二夹持装置(9; 90)上的模具晶片(15)冷却至低于第二温度(T2)并低于硬化温度(TH)的第三温度(T4); 并结束夹紧在第二夹紧装置(9; 90)上。
    • 84. 发明申请
    • APPARATUS AND METHOD FOR HIGH-THROUGHPUT ATOMIC LAYER DEPOSITION
    • 用于高通量原子层沉积的装置和方法
    • US20110268879A1
    • 2011-11-03
    • US12993361
    • 2009-05-20
    • Ernst H. A. GrannemanHerbert Terhorst
    • Ernst H. A. GrannemanHerbert Terhorst
    • C23C16/458C23C16/455
    • C23C16/54C23C16/45551C30B25/14C30B29/20C30B35/005H01L21/67784
    • Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a downwardly sloping process tunnel, extending in a transport direction and bounded by at least two tunnel walls. Both walls are provided with a plurality of gas injection channels, whereby the gas injection channels in at least one of the walls, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a series of tunnel segments that—in use—comprise successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively. The downward slope of the process tunnel enables gravity to drive the floatingly supported substrates through the successive segments, causing the atomic layer deposition of a film onto the substrates.
    • 用于以连续方式沉积膜的原子层沉积装置。 该装置包括向下倾斜的过程隧道,其在输送方向上延伸并且由至少两个隧道壁限定。 两个壁都设置有多个气体注入通道,由此在传送方向上观察的至少一个壁中的气体注入通道连续地连接到第一前体气体源,吹扫气体源,第二前体气体 源和吹扫气体源,以便产生一系列隧道段,其在使用中分别包括含有第一前体气体,吹扫气体,第二前体气体和吹扫气体的连续区域。 过程隧道的向下倾斜使得重力能够通过连续段驱动浮动支撑的衬底,导致原子层将膜沉积到衬底上。
    • 85. 发明申请
    • WAFER CONVEYING SYSTEM
    • WAFER输送系统
    • US20110129322A1
    • 2011-06-02
    • US12785529
    • 2010-05-24
    • Chih-hao HUANG
    • Chih-hao HUANG
    • B65G35/00
    • H01L21/67706H01L21/67784
    • A wafer conveying system includes a first conveying unit, a second conveying unit, a floating type conveying unit set between the first conveying unit and the second conveying unit for transferring wafers from the first conveying unit to the second conveying unit, two guide devices arranged at the two opposite lateral sides of the floating type conveying unit for guiding every transferring wafer from the first conveying unit through the floating type conveying unit to a predetermined location or its nearby area at the second conveying unit, and a test unit installed in the second conveying unit for testing the same area of every wafer been transferred to the second conveying unit.
    • 晶片输送系统包括第一输送单元,第二输送单元,设置在第一输送单元和第二输送单元之间的浮动式输送单元,用于将晶片从第一输送单元传送到第二输送单元,两个引导装置布置在 浮动式输送单元的两个相对侧面,用于将每个转印晶片从第一输送单元通过浮动型输送单元导引到第二输送单元处的预定位置或其附近区域;以及测试单元,安装在第二输送 用于测试每个晶片的相同面积的单元被转移到第二输送单元。
    • 87. 发明授权
    • Stage apparatus and application processing apparatus
    • 舞台装置和应用处理装置
    • US07908995B2
    • 2011-03-22
    • US11814526
    • 2006-01-19
    • Toshifumi InamasuTsuyoshi YamasakiKazuhito Miyazaki
    • Toshifumi InamasuTsuyoshi YamasakiKazuhito Miyazaki
    • B05C5/02B05C13/02
    • H01L21/67784B65G49/065B65G49/067B65G49/068B65G2249/02B65G2249/04B65G2249/045
    • A stage apparatus in which a rectangular substrate which is levitated over a stage is transferred such that a pair of sides of the rectangular substrate are substantially parallel to a transfer direction and the other pair of sides of the rectangular substrate are substantially perpendicular to the transfer direction. The stage includes a plurality of gas spray ports to spray a gas and a plurality of suction ports to attract the rectangular substrate by suction. The rectangular substrate is levitated at a predetermined height from the surface of the stage in a substantially horizontal posture by means of suction of a suction mechanism through the plurality of suction ports and gas spray of a gas spray mechanism through the plurality of gas spray ports. The plurality of suction ports are arranged on the stage such that, when the rectangular substrate is being transferred over the stage, the leading end of the rectangular substrate in the transfer direction does not simultaneously cover not less than a predetermined number of suction ports and the trailing end of the rectangular substrate in the transfer direction does not simultaneously open not less than a predetermined number of suction ports to the atmosphere, so as for variations in suction pressure in the suction ports to fall within an allowable range.
    • 传送在舞台上悬浮的矩形衬底的舞台装置,使得矩形衬底的一对侧基本上平行于传送方向,并且矩形衬底的另一对侧基本上垂直于传送方向 。 该台包括多个用于喷射气体的气体喷射口和多个吸入口,以通过抽吸吸引矩形基板。 矩形基板通过抽吸机构通过多个吸入口的抽吸和通过多个气体喷射口的气体喷射机构的气体喷射,以基本水平的姿势从台面的表面悬浮在预定高度。 多个吸入口设置在台架上,使得当矩形基板在台上传送时,矩形基板的传送方向的前端不能同时覆盖不少于预定数量的抽吸口,并且 沿传送方向的矩形基板的后端不能同时打开不少于预定数量的吸入口到大气中,从而吸入口中的吸入压力的变化落在容许范围内。
    • 90. 发明授权
    • Heating device and heating method
    • 加热装置及加热方式
    • US07758340B2
    • 2010-07-20
    • US11617319
    • 2006-12-28
    • Masami AkimotoShinichi HayashiNaruaki IidaHiroaki Inadomi
    • Masami AkimotoShinichi HayashiNaruaki IidaHiroaki Inadomi
    • F27D3/00
    • F27B17/0025F27B5/04F27D5/0037F27D15/02H01L21/67109H01L21/67748H01L21/67784Y10S414/139
    • A heating device provided with a cooling plate and a heating plate is formed in a low height, and floats a substrate above the cooling plate and the heating plate and moves the substrate horizontally between the cooling plate and the heating plate by the pressure of a gas. A heating device 2 includes a cooling plate 3 provided with flotation gas spouting ports 3a, and a heating plate provided with flotation gas spouting ports. The flotation gas spouting ports 3a and 3b are arranged along a wafer moving passage and are formed so as to spout the gas obliquely upward toward a first end of the wafer moving passage on the side of the cooling plate. A pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the heating plate 6 opposite a direction in which the flotation gas is spouted. The pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the cooling plate 3 in which the flotation gas is spouted.
    • 设置有冷却板和加热板的加热装置形成为低高度,并且浮动冷却板和加热板上方的基板,并且通过气体的压力将基板水平地移动到冷却板和加热板之间 。 加热装置2包括具有浮选气体吐出口3a的冷却板3和设置有浮选气体吐出口的加热板。 浮选气体喷出口3a,3b沿着晶片移动通道排列,形成为向冷却板侧的晶片移动通道的第一端倾斜向上喷出气体。 推动构件51相对于晶片W移动的方向与晶片W的后部接触,以使晶片W朝向加热板6的方向移动,该方向与浮选气体的方向相反 喷出 推动构件51相对于晶片W移动的方向与晶片W的后部接触,以朝向其中喷出浮选气体的冷却板3的方向移动晶片W.