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1. 发明授权

US08389389B2 Semiconductor layer manufacturing method, semiconductor layer manufacturing apparatus, and semiconductor device manufactured using such method and apparatus 失效
标题翻译：半导体层制造方法，半导体层制造装置以及使用该方法和装置制造的半导体装置
公开(公告)号：US08389389B2
公开(公告)日：2013-03-05
申请号：US12521080
申请日：2007-12-05
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L21/20
CPC分类号： H01L21/02661 , C23C16/4408 , C23C16/45557 , H01L21/02532 , H01L21/02573 , H01L21/02592 , H01L21/02595 , H01L21/0262 , H01L31/0747 , H01L31/075 , H01L31/1804 , H01L31/1816 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Provided are a semiconductor layer manufacturing method and a semiconductor manufacturing apparatus capable of forming a high quality semiconductor layer even by a single chamber system, with a shortened process time required for reducing a concentration of impurities that exist in a reaction chamber before forming the semiconductor layer. A semiconductor device manufactured using such a method and apparatus is also provided. The present invention relates to a semiconductor layer manufacturing method of forming a semiconductor layer inside a reaction chamber (101) capable of being hermetically sealed, including an impurities removing step of removing impurities inside the reaction chamber (101) using a replacement gas, and a semiconductor layer forming step of forming the semiconductor layer, the impurities removing step being a step in which a cycle composed of a replacement gas introducing step of introducing the replacement gas into the reaction chamber (101) and an exhausting step of exhausting the replacement gas is repeated a plurality of times, the impurities removing step being performed at least before the semiconductor layer forming step.
摘要翻译：提供了即使通过单室系统也能形成高质量半导体层的半导体层制造方法和半导体制造装置，在形成半导体层之前缩短反应室中存在的杂质浓度所需的缩短处理时间。还提供了使用这种方法和装置制造的半导体器件。本发明涉及一种半导体层制造方法，该半导体层制造方法在能够被气密密封的反应室（101）内部形成半导体层，其包括使用替换气体除去反应室（101）内的杂质的杂质除去步骤，以及形成半导体层的半导体层形成步骤，杂质除去步骤是将置换气体引入步骤构成的循环，将置换气体引入反应室（101）的排气步骤和排出置换气体的排气步骤的步骤是重复多次，至少在半导体层形成步骤之前进行杂质去除步骤。

2. 发明申请

US20120251723A1 METHOD OF CLEANING FILM FORMING APPARATUS, FILM FORMING METHOD, AND FILM FORMING APPARATUS 审中-公开
标题翻译：清洁膜成型装置，成膜方法和成膜装置的方法
公开(公告)号：US20120251723A1
公开(公告)日：2012-10-04
申请号：US13514851
申请日：2010-12-08
申请人： Katsushi Kishimoto , Kazuhiko Isshiki
发明人： Katsushi Kishimoto , Kazuhiko Isshiki
IPC分类号： B08B7/00 , C23C16/22 , C23C16/503
CPC分类号： C23C16/4405 , B08B7/0035
摘要： Plasma is generated on the first condition between a cathode electrode and an anode electrode. Then, plasma is generated on the second condition different from the first condition. The second condition is for spreading plasma between the cathode electrode and the anode electrode in the outer peripheral direction as compared with the first condition. Accordingly, in addition to a deposit on the electrode, a deposit on the member provided in the vicinity of the outer periphery of the electrode can be immediately removed.
摘要翻译：在阴极电极和阳极电极之间的第一状态下产生等离子体。然后，在与第一条件不同的第二条件下产生等离子体。第二个条件是与第一条件相比，在外周方向上在等离子体之间扩散阴极电极和阳极电极。因此，除了电极上的沉积之外，可以立即除去设置在电极外周附近的部件上的沉积物。

3. 发明授权

US08092640B2 Plasma processing apparatus and semiconductor device manufactured by the same apparatus 有权
标题翻译：等离子体处理装置和由同一装置制造的半导体装置
公开(公告)号：US08092640B2
公开(公告)日：2012-01-10
申请号：US11328461
申请日：2006-01-10
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： C23F1/00 , H01L21/306 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/06 , C23C16/22
CPC分类号： H01J37/3244
摘要： A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.
摘要翻译：本发明的等离子体处理装置包括：可密封室，反应性材料气体供应源，放置在室外;气体导入管，连接到气体供应源，用于将材料气体引入室;以及多个用于形成执行腔室中的原料气体的等离子体放电的多个放电空间的阴极 - 阳极体组。这里，气体引入管包括设置在室中的气体分支部，用于将气体供给源连接到气体分支部的主管，以及从主管经由主管连接到每个排出空间的多个分支管气支部。分支管构造成使得其电导基本上彼此相等。

4. 发明授权

US07927455B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07927455B2
公开(公告)日：2011-04-19
申请号：US11252885
申请日：2005-10-19
申请人： Katsushi Kishimoto , Yuhsuke Hukuoka
发明人： Katsushi Kishimoto , Yuhsuke Hukuoka
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32009 , C23C16/24 , C23C16/5096 , H01J37/32541 , H01J37/32568 , H01L27/14692 , H01L31/18
摘要： A plasma processing apparatus including a sealable chamber that is sealable, a gas supply section that supplies a reactive material gas into the chamber, and a plurality of cathode and anode electrode pairs provided within the chamber, connected to an external power supply, and producing plasma discharges through the material gas, respectively, wherein the plurality of cathode and anode electrode pairs are provided at a distance from one another at which the plasma discharges are prevented from interfering with one another.
摘要翻译：一种等离子体处理装置，包括可密封的可密封室，将反应性材料气体供应到室中的气体供应部分和设置在室内的多个阴极和阳极电极对，连接到外部电源，并产生等离子体分别通过材料气体排放，其中多个阴极电极对和阳极电极对设置成彼此间隔一段距离，在该距离处等离子体放电被防止彼此干扰。

5. 发明申请

US20100277050A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100277050A1
公开(公告)日：2010-11-04
申请号：US12811753
申请日：2008-12-19
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01J61/28
CPC分类号： C23C16/45565 , C23C16/5096 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： The invention provides a plasma processing apparatus that can uniformly supply a gas between a cathode electrode and an anode electrode, even when areas of both electrodes are increased, and that can reduce thicknesses of both electrodes.Two sets of an anode electrode 4 and a cathode electrode 12 are arranged in a chamber 15 of a plasma processing apparatus 100 so as to be opposite to each other. The cathode electrode 12 has a shower plate 2, a back plate 3, and a hollow room 17. The shower plate 2 is provided with first gas-ejection holes 18 for ejecting a gas, which is introduced into the hollow room 17, to a portion between both electrodes 4 and 12. A gas introducing port 31 for introducing a gas from an outside is provided at an electrode end face at a lower face inner-wall 19 of the hollow room 17 opposite to the shower plate 2) of the back plate 3. The inner-wall 19 of the hollow room 17 is provided with second gas-ejection holes 32 for ejecting the gas to the hollow room 17, and a gas guiding section 33 for guiding the gas to the second gas-ejection holes 32 from the gas introducing port 31.
摘要翻译：本发明提供一种等离子体处理装置，其能够均匀地供给阴极电极和阳极电极之间的气体，即使在两个电极的面积增大的同时也能够减小两电极的厚度。在等离子体处理装置100的室15中设置两组阳极电极4和阴极电极12，以使它们彼此相对。阴极12具有喷淋板2，背板3和中空室17.喷淋板2设置有第一气体喷出孔18，其将引入中空室17的气体喷射到一个两个电极4和12之间的部分。用于从外部引入气体的气体引入口31设置在后部的与淋浴板2相对的中空室17的下表面内壁19的电极端面处中空室17的内壁19设置有用于将气体喷射到中空室17的第二气体喷射孔32和用于将气体引导到第二气体喷射孔32的气体引导部33 从气体导入口31。

6. 发明申请

US20060151319A1 Plasma processing apparatus and semiconductor device manufactured by the same apparatus 失效
公开(公告)号：US20060151319A1
公开(公告)日：2006-07-13
申请号：US11328448
申请日：2006-01-10
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： C23C14/00
CPC分类号： H01J37/32431
摘要： A plasma processing apparatus of this invention includes a sealable chamber to be introduced with reactive material gas, a plurality of pairs of cathode-anode bodies arranged in the chamber, for forming a plurality of discharge spaces for performing plasma discharge of the material gas, a power supply for plasma discharge, placed outside the chamber, a matching box placed outside the chamber, for matching impedance between the cathode-anode bodies and the power supply, and a power introduction wire extending to each of the cathodes from the power supply via the matching box. Herein, the power introduction wire is branched to the number corresponding to the number of the cathodes between the matching box and the cathodes, and the branched wires are symmetrically extended.

7. 发明申请

US20060087211A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20060087211A1
公开(公告)日：2006-04-27
申请号：US11252885
申请日：2005-10-19
申请人： Katsushi Kishimoto , Yuhsuke Hukuoka
发明人： Katsushi Kishimoto , Yuhsuke Hukuoka
IPC分类号： C23C14/00 , H01J17/26
CPC分类号： H01J37/32009 , C23C16/24 , C23C16/5096 , H01J37/32541 , H01J37/32568 , H01L27/14692 , H01L31/18
摘要： A plasma processing apparatus including a sealable chamber that is sealable, a gas supply section that supplies a reactive material gas into the chamber, and a plurality of cathode and anode electrode pairs provided within the chamber, connected to an external power supply, and producing plasma discharges through the material gas, respectively, wherein the plurality of cathode and anode electrode pairs are provided at a distance from one another at which the plasma discharges are prevented from interfering with one another.
摘要翻译：一种等离子体处理装置，包括可密封的可密封室，将反应性材料气体供应到室中的气体供应部分和设置在室内的多个阴极和阳极电极对，连接到外部电源，并产生等离子体分别通过材料气体排放，其中多个阴极电极对和阳极电极对设置成彼此间隔一段距离，在该距离处等离子体放电被防止彼此干扰。

8. 发明申请

US20120155994A1 VACUUM PROCESSING DEVICE AND VACUUM PROCESSING FACTORY 审中-公开
标题翻译：真空加工设备和真空加工设备
公开(公告)号：US20120155994A1
公开(公告)日：2012-06-21
申请号：US13391886
申请日：2010-08-23
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L21/677
CPC分类号： H01L21/67724 , C23C16/54 , H01L21/6719 , H01L21/6773 , H01L21/67736 , H01L21/67775
摘要： A vacuum processing device includes a first processing chamber for housing a workpiece and performing vacuum processing on the workpiece, an evacuatable second processing chamber for housing a workpiece to be vacuum-processed and a workpiece having been vacuum-processed, a gate unit provided between the first and second processing chambers so that the gate unit is attachable to and detachable from the first processing chamber, a transport device for loading the workpiece to be vacuum-processed from a loading unit to a vacuum processing unit through the gate unit, and unloading the workpiece having been vacuum-processed from the vacuum processing unit to an unloading unit through the gate unit, and a movement mechanism for separating the first and second processing chambers from each other.
摘要翻译：真空处理装置包括：用于容纳工件并对工件进行真空处理的第一处理室，用于容纳要被真空处理的工件的可抽空的第二处理室和被真空处理的工件; 第一处理室和第二处理室，使得门单元可附接到第一处理室和可从第一处理室拆卸;传送装置，用于通过门单元将从加载单元被真空处理的工件装载到真空处理单元，工件已经从真空处理单元被真空处理到通过门单元的卸载单元，以及用于将第一和第二处理室彼此分离的移动机构。

9. 发明授权

US08137046B2 Substrate transfer apparatus and substrate transfer method 有权
标题翻译：基板转印装置和基板转印方法
公开(公告)号：US08137046B2
公开(公告)日：2012-03-20
申请号：US12536912
申请日：2009-08-06
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Noriyoshi Kohama , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Noriyoshi Kohama , Yusuke Ozaki
IPC分类号： B65G35/00
CPC分类号： H01L21/67784 , H01L21/67748
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other, each of guide plates having a plurality of floating gas ejecting holes; a gas supplying source; a tray to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray from the guide plate to the adjacent other guide plate, wherein the tray includes both side edges, and a contact/engagement portion formed at the respective both side edges for the transfer arm, each of the transfer arms including a base portion that can horizontally reciprocate along a rail provided so as to be parallel to the transfer direction, a guide portion provided to the base portion, that can horizontally reciprocate in a direction orthogonal to the transfer direction, and an arm portion provided to the guide portion, that can horizontally reciprocate in the direction parallel to the transfer direction.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，每个导板具有多个浮动气体喷射孔; 气体供应源; 用于安装待转移的基板并由浮动气体浮动的托盘; 以及用于将浮托盘从引导板传送到相邻的另一个引导板的传送臂，其中托盘包括两个侧边缘，以及形成在传送臂的相应两个侧边缘处的接触/接合部分，每个传送包括可沿着设置成平行于传送方向的轨道水平往复运动的基部的臂，设置在基部上的引导部，该引导部能够沿与传送方向正交的方向水平往复运动;以及臂部，导向部分能够沿平行于传送方向的方向水平往复运动。

10. 发明申请

US20110312167A1 PLASMA PROCESSING APPARATUS, AND DEPOSITION METHOD AN ETCHING METHOD USING THE PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置和使用等离子体处理装置的蚀刻方法的沉积方法
公开(公告)号：US20110312167A1
公开(公告)日：2011-12-22
申请号：US12995579
申请日：2009-05-28
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Nobuyuki Tanigawa
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Nobuyuki Tanigawa
IPC分类号： H01L21/205 , H01L21/3065 , C23C16/50
CPC分类号： H01J37/32568 , C23C16/509 , H01J37/32091
摘要： A plasma processing apparatus, comprising: a reaction chamber; a plurality of discharge portions each made up of a pair of a first electrode and a second electrode disposed inside the reaction chamber so as to oppose to each other and to cause a plasma discharge under an atmosphere of a reactant gas; and a dummy electrode, wherein a plurality of the first electrodes are connected to a power supply portion, a plurality of the second electrodes are grounded, and the dummy electrode is disposed so as to oppose to an outer surface side of an external first electrode in terms of a parallel direction out of the plurality of the first electrodes which are disposed in the parallel direction, and is grounded.
摘要翻译：一种等离子体处理装置，包括：反应室; 多个放电部分，每个由一对第一电极和第二电极构成，设置在反应室内部以彼此相对，并在反应气体的气氛下引起等离子体放电; 和虚拟电极，其中多个所述第一电极连接到电源部分，多个所述第二电极接地，并且所述虚拟电极被设置为与所述外部第一电极的外表面侧相对并排设置在平行方向上的多个第一电极中的并联方向的接地。

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