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    • 90. 发明授权
    • Heat treatment apparatus and method for heating substrate by photo-irradiation
    • 热处理装置及通过光照射加热基板的方法
    • US08559799B2
    • 2013-10-15
    • US12563409
    • 2009-09-21
    • Hideo NishiharaShinichi Kato
    • Hideo NishiharaShinichi Kato
    • F26B19/00
    • H01L21/67115H01L21/26513H01L21/2686
    • Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.
    • 进行两步光照射热处理,使得总的光照射时间不超过1秒,并且利用平均在a的光发射输出进行半导体晶片的光照射的第一步骤 第一发光输出和半导体晶片的光照射的第二步骤根据在第二发光输出处峰值的输出波形进行,该输出波形高于第一步骤中的平均和最大发光输出 。 在第一步骤中以相对低的发光输出进行初步光照射,然后在第二步骤中用较高的峰进行强光照射使得半导体晶片的表面温度能够以更少量的能量进一步增加, 在常规情况下,同时防止半导体晶片破碎。