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1. 发明申请

US20130078786A1 HEAT TREATMENT METHOD FOR PROMOTING CRYSTALLIZATION OF HIGH DIELECTRIC CONSTANT FILM 有权
标题翻译：用于促进高介电常数膜结晶的热处理方法
公开(公告)号：US20130078786A1
公开(公告)日：2013-03-28
申请号：US13607892
申请日：2012-09-10
申请人： Kazuhiko FUSE , Shinichi KATO
发明人： Kazuhiko FUSE , Shinichi KATO
IPC分类号： H01L21/3105 , H01L21/20
CPC分类号： H01L21/02356 , H01L21/2686 , H01L21/28176 , H01L21/67115 , H01L21/68707 , H01L21/68735 , H01L29/513 , H01L29/517 , H01L29/7848
摘要： A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.
摘要翻译：在硅 - 锗层上形成二氧化硅膜，并且在二氧化硅膜上进一步形成高介电常数膜。在半导体晶片上进行来自闪光灯的第一次照射，将半导体晶片的正面的温度从预热温度升温至目标温度，时间范围为3毫秒〜1秒。随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内，持续3毫秒至1秒的时间段。这促进了高介电常数膜的结晶，同时抑制了硅 - 锗层中的变形的减轻。

2. 发明授权

US5545055A Method and apparatus for mechanically and electrically coupling metal terminals in a housing 失效
标题翻译：用于将金属端子机械和电耦合在壳体中的方法和装置
公开(公告)号：US5545055A
公开(公告)日：1996-08-13
申请号：US274278
申请日：1994-07-13
申请人： Seiji Tanaka , Shuji Kosuge , Kazuhiko Fuse
发明人： Seiji Tanaka , Shuji Kosuge , Kazuhiko Fuse
IPC分类号： H01R31/08
CPC分类号： H01R31/08 , H01R2107/00
摘要： Three male terminals are inserted respectively into terminal receiving chambers in a male connector housing and a bus bar is inserted into the terminal receiving chambers through a through-hole. As a result, the insertion side portion of the bus bar is press-fitted in reception grooves in bus bar press-fitting portions disposed beneath the through-hole. Thus, the insertion side portion of the bus bar is received in the reception grooves in the three male terminals, and is mechanically fixed to and electrically connected to the male terminals, so that three insulated wires connected respectively to the male terminals are connected together only at the male connector housing.
摘要翻译：三个阳端子分别插入阳连接器壳体中的端子接收室中，并且汇流条通过通孔插入端子容纳室中。结果，母线的插入侧部分压配合在设置在通孔下方的母线压配合部分的接收槽中。因此，汇流条的插入侧部分被容纳在三个公端子的接收槽中，并且被机械地固定到阳端子并与其电连接，使得分别连接到阳端子的三根绝缘电线仅连接在一起在阳连接器外壳上。

3. 发明授权

US08664116B2 Heat treatment method for growing silicide 有权
标题翻译：生长硅化物的热处理方法
公开(公告)号：US08664116B2
公开(公告)日：2014-03-04
申请号：US13606281
申请日：2012-09-07
申请人： Kazuhiko Fuse , Shinichi Kato
发明人： Kazuhiko Fuse , Shinichi Kato
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/2686 , H01L21/67115 , H01L21/67248 , H01L21/68742
摘要： Ions of silicon are implanted into source/drain regions in a semiconductor wafer to amorphize an ion implantation region in the semiconductor wafer. A nickel film is deposited on the amorphized ion implantation region. First irradiation from a flash lamp is performed on the semiconductor wafer with the nickel film deposited thereon to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 1 to 100 milliseconds. This causes nickel silicide to grow preferentially in a direction perpendicular to the semiconductor wafer.
摘要翻译：将硅的离子注入到半导体晶片中的源极/漏极区域中以使半导体晶片中的离子注入区域非晶化。镍膜沉积在非晶化离子注入区上。在其上沉积有镍膜的半导体晶片上进行来自闪光灯的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度，持续1至20毫秒的范围。随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内在1至100毫秒范围内的时间段内。这使得硅化镍在垂直于半导体晶片的方向上优先生长。

4. 发明申请

US20130078744A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS OF THIN FILM 有权
标题翻译：薄膜热处理方法及热处理装置
公开(公告)号：US20130078744A1
公开(公告)日：2013-03-28
申请号：US13609947
申请日：2012-09-11
申请人： Hiroki KIYAMA , Kazuhiko FUSE , Shinichi KATO
发明人： Hiroki KIYAMA , Kazuhiko FUSE , Shinichi KATO
IPC分类号： H01L21/30 , A21B1/22
CPC分类号： H01L21/2686 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/02356 , H01L21/67109 , H01L21/67115
摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要翻译：在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间为0.01毫秒以上且1毫秒以下。由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

5. 发明授权

US08852966B2 Heat treatment method and heat treatment apparatus of thin film 有权
标题翻译：薄膜的热处理方法和热处理装置
公开(公告)号：US08852966B2
公开(公告)日：2014-10-07
申请号：US13609947
申请日：2012-09-11
申请人： Hiroki Kiyama , Kazuhiko Fuse , Shinichi Kato
发明人： Hiroki Kiyama , Kazuhiko Fuse , Shinichi Kato
IPC分类号： H01L21/26 , H01L21/02 , H01L21/268 , H01L21/67
CPC分类号： H01L21/2686 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/02356 , H01L21/67109 , H01L21/67115
摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要翻译：在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间为0.01毫秒以上且1毫秒以下。由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

6. 发明授权

US08623750B2 Heat treatment method for promoting crystallization of high dielectric constant film 有权
标题翻译：促进高介电常数膜结晶的热处理方法
公开(公告)号：US08623750B2
公开(公告)日：2014-01-07
申请号：US13607892
申请日：2012-09-10
申请人： Kazuhiko Fuse , Shinichi Kato
发明人： Kazuhiko Fuse , Shinichi Kato
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02356 , H01L21/2686 , H01L21/28176 , H01L21/67115 , H01L21/68707 , H01L21/68735 , H01L29/513 , H01L29/517 , H01L29/7848
摘要： A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.
摘要翻译：在硅 - 锗层上形成二氧化硅膜，并且在二氧化硅膜上进一步形成高介电常数膜。在半导体晶片上进行来自闪光灯的第一次照射，将半导体晶片的正面的温度从预热温度升温至目标温度，时间范围为3毫秒〜1秒。随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内，持续3毫秒至1秒的时间段。这促进了高介电常数膜的结晶，同时抑制了硅 - 锗层中的变形的减轻。

7. 发明申请

US20130078802A1 HEAT TREATMENT METHOD FOR GROWING SILICIDE 有权
标题翻译：用于生长硅胶的热处理方法
公开(公告)号：US20130078802A1
公开(公告)日：2013-03-28
申请号：US13606281
申请日：2012-09-07
申请人： Kazuhiko FUSE , Shinichi KATO
发明人： Kazuhiko FUSE , Shinichi KATO
IPC分类号： H01L21/768
CPC分类号： H01L21/28518 , H01L21/2686 , H01L21/67115 , H01L21/67248 , H01L21/68742
摘要： Ions of silicon are implanted into source/drain regions in a semiconductor wafer to amorphize an ion implantation region in the semiconductor wafer. A nickel film is deposited on the amorphized ion implantation region. First irradiation from a flash lamp is performed on the semiconductor wafer with the nickel film deposited thereon to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 1 to 100 milliseconds. This causes nickel silicide to grow preferentially in a direction perpendicular to the semiconductor wafer.
摘要翻译：将硅的离子注入到半导体晶片中的源极/漏极区域中以使半导体晶片中的离子注入区域非晶化。镍膜沉积在非晶化离子注入区上。在其上沉积有镍膜的半导体晶片上进行来自闪光灯的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度，持续1至20毫秒的范围。随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内在1至100毫秒范围内的时间段内。这使得硅化镍在垂直于半导体晶片的方向上优先生长。

8. 发明申请

US20080238434A1 Surface voltmeter 有权
标题翻译：表面电压表
公开(公告)号：US20080238434A1
公开(公告)日：2008-10-02
申请号：US12076887
申请日：2008-03-25
申请人： Motohiro Kono , Toshikazu Kitajima , Kazuhiko Fuse , Yoshiyuki Nakazawa
发明人： Motohiro Kono , Toshikazu Kitajima , Kazuhiko Fuse , Yoshiyuki Nakazawa
IPC分类号： G01R29/12
CPC分类号： G01R29/12
摘要： In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body of the substrate (9) by charge which is charged on a surface of the insulating film is balanced out. Consequently, it is possible to measure a surface voltage on the measurement area with high accuracy. Since an electrode wiring (164) used for application of an electrode voltage to an electrode (12) extends from the electrode (12) in a direction away from the substrate (9) along a vibration direction, it is possible to prevent influences of noises caused by vibration of the electrode wiring (164) in vibrating the electrode (12) and to measure the surface voltage on the measurement area more accurately.
摘要翻译：在表面电压计（1）中，在对测量区域施加光的同时测量在其上形成有绝缘膜的半导体衬底（9）上的测量区域上的表面电压。通过该操作，平衡了在基板（9）的主体上通过充电在绝缘膜的表面上的电荷感应的电压。因此，可以高精度地测量测量区域上的表面电压。由于用于向电极（12）施加电极电压的电极配线（164）沿着振动方向从离开基板（9）的方向从电极（12）延伸，所以可以防止噪声的影响由电极布线（164）振动电极（12）的振动引起的，并且更准确地测量测量区域上的表面电压。

9. 发明申请

US20160293424A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT 有权
标题翻译：热处理方法和热处理装置通过用光照射基板加热基板
公开(公告)号：US20160293424A1
公开(公告)日：2016-10-06
申请号：US15143043
申请日：2016-04-29
申请人： Kazuhiko FUSE , Shinichi Kato , Kenichi Yokouchi
发明人： Kazuhiko FUSE , Shinichi Kato , Kenichi Yokouchi
IPC分类号： H01L21/225 , H01L21/324 , H01L21/265
CPC分类号： H01L21/2253 , F27B17/0025 , H01L21/02694 , H01L21/26513 , H01L21/2686 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68707 , H01L21/68742
摘要： First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
摘要翻译：执行使闪光灯的发射输出在1至20毫秒的范围内达到其最大值的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度在1到20毫秒的范围内的时间段。这实现了杂质的活化。随后，进行从3-50毫秒的范围内的最大值的最大值逐渐降低的第二次照射，将前表面的温度保持在目标温度±25℃左右的范围内时间段在3到50毫秒的范围内。这防止了杂质的扩散抑制了工艺引起的损伤的发生。

10. 发明授权

US09343313B2 Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light 有权
标题翻译：热处理方法和通过用光照射基板来加热基板的热处理装置
公开(公告)号：US09343313B2
公开(公告)日：2016-05-17
申请号：US13417498
申请日：2012-03-12
申请人： Kazuhiko Fuse , Shinichi Kato , Kenichi Yokouchi
发明人： Kazuhiko Fuse , Shinichi Kato , Kenichi Yokouchi
IPC分类号： H01L21/263 , H01L21/324 , H01L21/268 , H01L21/67 , H01L21/687 , F27B17/00 , H01L21/265
CPC分类号： H01L21/2253 , F27B17/0025 , H01L21/02694 , H01L21/26513 , H01L21/2686 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68707 , H01L21/68742
摘要： First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
摘要翻译：执行使闪光灯的发射输出在1至20毫秒的范围内达到其最大值的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度在1到20毫秒的范围内的时间段。这实现了杂质的活化。随后，进行从3-50毫秒的范围内的最大值的最大值逐渐降低的第二次照射，将前表面的温度保持在目标温度±25℃左右的范围内时间段在3到50毫秒的范围内。这防止了杂质的扩散抑制了工艺引起的损伤的发生。

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