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81. 发明授权

US07925090B2 Method of determining photo mask, method of manufacturing semiconductor device, and computer program product 失效
标题翻译：确定光掩模的方法，制造半导体器件的方法以及计算机程序产品
公开(公告)号：US07925090B2
公开(公告)日：2011-04-12
申请号：US11601797
申请日：2006-11-20
申请人： Toshiya Kotani , Kazuya Fukuhara , Kyoko Izuha
发明人： Toshiya Kotani , Kazuya Fukuhara , Kyoko Izuha
IPC分类号： G06K9/34
CPC分类号： G03F7/70441
摘要： A method of determining a photo mask, includes specifying a mask pattern for a photo mask for a first exposure apparatus, specifying a plurality of exposure conditions allowed to be set for a second exposure apparatus, predicting a projection image of the mask pattern to be projected on a substrate by the second exposure apparatus, for each of the exposure conditions, predicting a processed pattern to be formed on a substrate surface on the basis of the projection image, for each of the exposure conditions, determining whether or not the processed pattern meets a predetermined condition for each of the exposure conditions, and determining that the photo mask is applicable to the second exposure apparatus if the processed pattern meets the predetermined condition for at least one of the exposure conditions.
摘要翻译：一种确定光掩模的方法包括：为第一曝光装置指定用于光掩模的掩模图案，指定允许为第二曝光装置设置的多个曝光条件，预测要投影的掩模图案的投影图像在第二曝光装置的基板上，对于每个曝光条件，对于每个曝光条件，基于投影图像预测要在基板表面上形成的处理图案，确定处理图案是否满足对于每个曝光条件的预定条件，并且如果处理的图案满足至少一个曝光条件的预定条件，则确定光掩模适用于第二曝光装置。

82. 发明授权

US07740994B2 Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device 失效
标题翻译：光掩模基板的选择方法，光掩模的制造方法以及半导体装置的制造方法
公开(公告)号：US07740994B2
公开(公告)日：2010-06-22
申请号：US11585130
申请日：2006-10-24
申请人： Kazuya Fukuhara , Masamitsu Itoh
发明人： Kazuya Fukuhara , Masamitsu Itoh
IPC分类号： G03F1/00
CPC分类号： G03F1/84 , G03F1/44
摘要： According to an aspect of the invention, there is provided a method for selecting a photomask substrate, including dividing a chip area scheduled to be arranged on the photomask substrate regarding a specific transfer pattern layer into a management pattern area in which an element pattern changed in shape by birefringence of the photomask substrate is arranged, and an area other than the management pattern area, setting a standard value of a size of birefringence of an area in which the management pattern area of the photomask substrate is arranged, inspecting the size of the birefringence of each of a plurality of photomask substrate candidates, and selecting a photomask substrate, in which the size of the birefringence satisfies the standard value, as a photomask substrate of the specific transfer pattern layer from the plurality of photomask substrate candidates.
摘要翻译：根据本发明的一个方面，提供了一种用于选择光掩模衬底的方法，包括将针对特定传输图案层布置在光掩模衬底上的芯片区域划分成其中元件图案改变的管理图案区域布置光掩模基板的双折射形状，并且设置管理图案区域以外的区域，设置布置有光掩模基板的管理图案区域的区域的双折射尺寸的标准值，检查多个光掩模衬底候选中的每一个的双折射，并且从多个光掩模衬底候选中选择其中双折射的尺寸满足标准值的光掩模衬底作为特定转移图案层的光掩模衬底。

83. 发明申请

US20100081093A1 EXPOSURE APPARATUS INSPECTION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：曝光装置检查方法和制造半导体器件的方法
公开(公告)号：US20100081093A1
公开(公告)日：2010-04-01
申请号：US12554782
申请日：2009-09-04
申请人： Kentaro Kasa , Takashi Sato , Kazuya Fukuhara
发明人： Kentaro Kasa , Takashi Sato , Kazuya Fukuhara
IPC分类号： G03F7/20 , G03B27/32 , G03B27/42
CPC分类号： G03F7/70641
摘要： A mask pattern includes a first pattern having a line-and-space pattern extending in a first direction, a second pattern formed as a line-and-space pattern having a larger period than the first pattern and extending in the first direction, a third pattern having a line-and-space pattern extending in a second direction, and a fourth pattern formed as a line-and-space pattern having a larger period than the third pattern and extending in the second direction. Illumination light is obliquely incident on the first pattern and the second pattern from a first oblique direction, illumination light is obliquely incident on the third pattern and the fourth pattern from a second oblique direction, and a relative distance from the first pattern to the second pattern transferred on to an image receptor and a relative distance from the third pattern to the fourth pattern transferred onto the image receptor are measured and an optical characteristic of an exposure apparatus is ascertained based on the relative distances.
摘要翻译：掩模图案包括具有沿第一方向延伸的线间距图案的第一图案，形成为具有比第一图案更长的周期并沿第一方向延伸的线间距图案的第二图案，第三图案图案具有沿第二方向延伸的线间距图案，以及形成为具有比第三图案更大的周期并沿第二方向延伸的线间距图案的第四图案。照明光从第一倾斜方向倾斜入射在第一图案和第二图案上，照明光从第二倾斜方向倾斜入射在第三图案和第四图案上，并且从第一图案到第二图案的相对距离转印到图像接收器上，并且测量从第三图案到转印到图像接收器上的第四图案的相对距离，并且基于相对距离确定曝光设备的光学特性。

84. 发明授权

US07685556B2 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US07685556B2
公开(公告)日：2010-03-23
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

85. 发明授权

US07676078B2 Inspection method, processor and method for manufacturing a semiconductor device 失效
标题翻译：用于制造半导体器件的检查方法，处理器和方法
公开(公告)号：US07676078B2
公开(公告)日：2010-03-09
申请号：US10776591
申请日：2004-02-12
申请人： Kazuya Fukuhara
发明人： Kazuya Fukuhara
IPC分类号： G06K9/00 , G01B11/00 , H01L21/00 , G03C5/00
CPC分类号： G03F7/70133 , G01N21/95607 , G03F7/70591 , G03F7/70616
摘要： An inspection method for an illumination optical system of an exposure tool includes coating a surface of an exposure target substrate with a resist film; placing a plurality of imaging components deviating from an optical conjugate plane of a surface of the resist film; generating a plurality of inspection patterns of the resist film having a plurality of openings, by projecting exposure beams output from a plurality of effective light sources onto the resist film via the imaging components; measuring one of the inspection patterns as a reference image, and processing the reference image so as to provide reference image data; and determining an abnormal inspection image by measuring inspection images of the inspection patterns and comparing a plurality of inspection image data provided by processing the inspection images with the reference image data.
摘要翻译：曝光工具的照明光学系统的检查方法包括用抗蚀剂膜涂覆曝光对象基板的表面; 放置偏离抗蚀膜的表面的光共轭面的多个成像组件; 通过经由成像部件将从多个有效光源输出的曝光光束投影到抗蚀剂膜上，产生具有多个开口的抗蚀剂膜的多个检查图案; 测量所述检查图案之一作为参考图像，并处理所述参考图像以便提供参考图像数据; 以及通过测量所述检查图案的检查图像并将通过处理所述检查图像而提供的多个检查图像数据与所述参考图像数据进行比较来确定异常检查图像。

86. 发明申请

US20090244504A1 PROJECTION EXPOSURE METHOD 失效
标题翻译：投影曝光方法
公开(公告)号：US20090244504A1
公开(公告)日：2009-10-01
申请号：US12395513
申请日：2009-02-27
申请人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
发明人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
IPC分类号： G03B27/42 , G03B27/72
CPC分类号： G03B27/42 , G03B27/72
摘要： A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
摘要翻译：一种投影曝光方法，其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光，将衍射光投射到晶片上，其中在基本上垂直于光轴的平面中，施加到掩模的光具有第一强度分布，其中在光轴中心的八边形的八个顶点附近的强度比在其它区域中的强度高，掩模具有多个第一开口图案被布置成矩形格子构型，其具有平行于通过光轴的八边形的对角线的边，并且多个第二开口图案以面向中心的矩形格子构造布置，具有平行于八角形通过光轴。

87. 发明授权

US07440104B2 Exposure system, test mask for monitoring polarization, and method for monitoring polarization 失效
标题翻译：曝光系统，用于监测极化的测试掩模，以及监测极化的方法
公开(公告)号：US07440104B2
公开(公告)日：2008-10-21
申请号：US11267103
申请日：2005-11-07
申请人： Takashi Sato , Kazuya Fukuhara , Keita Asanuma
发明人： Takashi Sato , Kazuya Fukuhara , Keita Asanuma
IPC分类号： G01J4/00
CPC分类号： G03F7/70566 , G03F1/44 , H01L21/0271
摘要： An exposure system includes an exposure tool configured to project grating patterns oriented in different directions onto test areas by a linearly polarized light, respectively, each of the grating patterns having a space width preventing higher order diffracted lights from an image formation, a data collector configured to collect sets of test optical intensity data on the test areas, and a polarization direction monitor configured to monitor a polarization direction of the linearly polarized light by comparing the sets of the test optical intensity data.
摘要翻译：曝光系统包括：曝光工具，被配置为将通过线性偏振光将不同方向的光栅图案定向到测试区域，每个光栅图案具有防止来自图像形成的较高阶衍射光的空间宽度，数据收集器配置以在测试区域上收集测试光强度数据集;以及偏振方向监视器，被配置为通过比较测试光强数据的集合来监视线偏振光的偏振方向。

88. 发明申请

US20080026300A1 Photomask manufacturing method and semiconductor device manufacturing method 有权
标题翻译：光掩模制造方法和半导体器件制造方法
公开(公告)号：US20080026300A1
公开(公告)日：2008-01-31
申请号：US11878580
申请日：2007-07-25
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： H01L21/02 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
摘要翻译：本发明公开了一种光掩模制造方法。通过准备其中在透明基板上形成掩模图案并测量图案尺寸的掩模面内分布的光掩模来生成图案尺寸图。通过将图案形成区域划分为多个子区域，并且确定多个子区域中的每个子区域的透射率校正系数来生成透射率校正系数图。基于图案尺寸图和透射率校正系数图计算每个子区域的透射率校正值。基于透射率校正值改变对应于每个子区域的透明基板的透射率。

89. 发明申请

US20080014510A1 PHOTOMASK DESIGNING APPARATUS, PHOTOMASK, PHOTOMASK DESIGNING METHOD, PHOTOMASK DESIGNING PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM ON WHICH THE PHOTOMASK DESIGNING PROGRAM IS STORED 审中-公开
标题翻译：光电设计设计，照相机，光电设计方法，光电设计设计程序和计算机可读存储介质，其中存储有光电设计程序
公开(公告)号：US20080014510A1
公开(公告)日：2008-01-17
申请号：US11777481
申请日：2007-07-13
申请人： Tadahito FUJISAWA , Takeshi Ito , Yoshihiro Yanai , Atsushi Maesono , Kazuya Fukuhara
发明人： Tadahito FUJISAWA , Takeshi Ito , Yoshihiro Yanai , Atsushi Maesono , Kazuya Fukuhara
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A photomask designing apparatus designs a photomask provided with a light transmission region through which exposure light with a predetermined wavelength transmits, a semi-transmission region having an optical characteristic of 180-degree phase shift and a light shielding region shielding exposure light. The semi-transmission region has a width set so as to be larger as a distance from the semi-transmission region to the light shielding region becomes short with respect to a region in which the semi-transmission region, the light transmission region and the light shielding region are sequentially formed outward from an exposure light passing region side. The width of the semi-transmission region is set so as to be smaller as the distance becomes long.
摘要翻译：光掩模设计装置设计具有透光区域的光掩模，具有预定波长的曝光光透过的光掩模，具有180度相移的光学特性的半透射区域和遮光区域屏蔽曝光光。半透射区域的宽度被设定为随着从半透射区域到遮光区域的距离相对于半透射区域，光透射区域和光线的区域变短而变大屏蔽区域从曝光光通过区域侧向外顺序地形成。半透射区域的宽度被设定为随着距离变长而变小。

90. 发明申请

US20080008941A1 Photomask and method of manufacturing semiconductor device using the photomask 失效
标题翻译：光掩模和使用光掩模制造半导体器件的方法
公开(公告)号：US20080008941A1
公开(公告)日：2008-01-10
申请号：US11819104
申请日：2007-06-25
申请人： Takashi Sato , Kazuya Fukuhara
发明人： Takashi Sato , Kazuya Fukuhara
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/32 , G03F7/70283 , G03F7/70566
摘要： A photomask includes a mask substrate to be irradiated with irradiation light, and first and second phase shifters arranged on the mask substrate. The first phase shifter is arranged on the mask substrate with a first pitch not larger than eight times the wavelength of the irradiation light, has a transmittance of not more than 5% for the irradiation light, and phase-shifts the irradiation light by 180°. The second phase shifter is arranged on the mask substrate with a second pitch larger than eight times the wavelength, has a transmittance of not more than 5%, and phase-shifts the irradiation light by 180°.
摘要翻译：光掩模包括用照射光照射的掩模基板，以及布置在掩模基板上的第一和第二移相器。第一移相器以不大于照射光的八倍的第一音调布置在掩模基板上，对于照射光具有不大于5％的透射率，并将照射光相移180° 。第二移相器布置在掩模基板上，第二间距大于波长的八倍，透射率不大于5％，并将照射光相移180°。

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