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    • 82. 发明申请
    • METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY
    • 用于控制等离子体均匀性的方法和装置
    • US20090197015A1
    • 2009-08-06
    • US12344210
    • 2008-12-24
    • Jozef KudelaGaku FurutaCarl A. SorensenSoo Young ChoiJohn M. White
    • Jozef KudelaGaku FurutaCarl A. SorensenSoo Young ChoiJohn M. White
    • C23C16/513
    • H01J37/32623C23C16/345C23C16/5096H01J37/32082
    • Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.
    • 系统,方法和装置包括用于在基板上沉积膜的等离子体处理室。 等离子体处理室包括具有接地板,背板和存在于接地板和背板之间的不均匀性的盖组件。 不均匀性可能会干扰RF波均匀性,并导致接地板和背板的部分之间的阻抗不平衡。 不均匀性可以包括非均匀表面的结构或减小的间隔。 存在不均匀表面的减小的间隔,其中在第一端处的接地板和背板之间的第一距离在第二端处不同于接地板和背板之间的第二距离。 该结构可以是2cm至10cm厚,覆盖背板的20%至50%,并且位于远离存在于腔室内的不连续处。
    • 85. 发明申请
    • METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS
    • 用流平面设计沉积均匀硅膜的方法和装置
    • US20080302303A1
    • 2008-12-11
    • US11759599
    • 2007-06-07
    • Soo Young ChoiTae Kyung WonJohn M. White
    • Soo Young ChoiTae Kyung WonJohn M. White
    • C23C16/00B05B1/14
    • C23C16/24C23C16/45565C23C16/5096H01J37/32449
    • Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
    • 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中,该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板,并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈,位于角部的第一多个扼流圈,以及通过气体分配板形成的第二多个扼流圈,沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中,所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。
    • 86. 发明申请
    • Method and apparatus for improving uniformity of large-area substrates
    • 改善大面积基板均匀性的方法和装置
    • US20070221128A1
    • 2007-09-27
    • US11389603
    • 2006-03-23
    • Soo Young ChoiJohn M. White
    • Soo Young ChoiJohn M. White
    • C23C16/00
    • C23C16/45565C23C16/345C23C16/5096C23C16/52
    • Embodiments of the present invention generally provide methods and apparatus for improving the uniformity of a film deposited on a large-area substrate, particularly for films deposited in a PECVD system. In one embodiment, a plasma-processing chamber is configured to be asymmetrical relative to a substrate in order to compensate for plasma density non-uniformities in the chamber caused by unwanted magnetic fields. In another embodiment, a plasma-processing chamber is adapted to create a neutral current bypass path that reduces electric current flow through a magnetic field-generating feature in the chamber. In another embodiment, a method is provided for depositing a uniform film on a large-area substrate in a plasma-processing chamber. The chamber is made electrically symmetric during processing by creating a neutral current bypass path, wherein the neutral current bypass path substantially reduces neutral current flow through a magnetic field-generating feature in the chamber.
    • 本发明的实施例通常提供了用于改善沉积在大面积基板上的膜的均匀性的方法和装置,特别是用于沉积在PECVD系统中的薄膜。 在一个实施例中,等离子体处理室被配置为相对于衬底是不对称的,以便补偿由不想要的磁场引起的腔室中的等离子体密度不均匀性。 在另一个实施例中,等离子体处理室适于产生中性电流旁路路径,其减小通过腔室中的磁场产生特征的电流。 在另一个实施例中,提供了一种用于在等离子体处理室中的大面积衬底上沉积均匀膜的方法。 通过产生中性电流旁路路径,室在处理期间被电对称,其中中性线旁路通过基本上减少通过腔室中的磁场产生特征的中性点电流。
    • 89. 发明申请
    • METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS
    • 用流平面设计沉积均匀硅膜的方法和装置
    • US20120103264A1
    • 2012-05-03
    • US13349332
    • 2012-01-12
    • SOO YOUNG CHOITae Kyung WonJohn M. White
    • SOO YOUNG CHOITae Kyung WonJohn M. White
    • C23C16/455
    • C23C16/24C23C16/45565C23C16/5096H01J37/32449
    • Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
    • 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中,该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板,并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈,位于角部的第一多个扼流圈,以及通过气体分配板形成的第二多个扼流圈,沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中,所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。