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1. 发明申请

US20180166304A1 ION INJECTOR AND LENS SYSTEM FOR ION BEAM MILLING 审中-公开
公开(公告)号：US20180166304A1
公开(公告)日：2018-06-14
申请号：US15880266
申请日：2018-01-25
申请人： Lam Research Corporation
发明人： Ivan L. Berry, III , Thorsten Lill
IPC分类号： H01L21/67 , H01J37/32 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32174 , H01J37/32357 , H01J37/32422 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32623 , H01J37/32715 , H01L21/3065
摘要： The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.

2. 发明授权

US09735020B2 System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas 有权
公开(公告)号：US09735020B2
公开(公告)日：2017-08-15
申请号：US14924572
申请日：2015-10-27
申请人： Lam Research Corporation
发明人： Eric A. Hudson
IPC分类号： H01L21/3065 , H01L21/311 , H01J37/32 , H05H1/24
CPC分类号： H01L21/3065 , H01J37/32532 , H01J37/32541 , H01J37/32596 , H01J2237/182 , H01L21/31116 , H05H1/24
摘要： A method of etching a wafer includes injecting a source gas mixture into a process chamber. The injecting includes injecting the source gas into multiple hollow cathode cavities in a top electrode, generating plasma in each of the cavities, and outputting the plasma from corresponding outlets of the cavities into a wafer processing region in the chamber, where the processing region is located between the outlets and a surface to be etched. An etchant gas mixture is injected into the processing region through injection ports in the top electrode such that the etchant gas mixes with the plasma output from the outlets. The etchant gas is prevented from flowing into the outlets of the cavities by the plasma flowing from the outlets. Mixing the etchant gas and the output from the cavities generates a desired chemical species in the processing region and thereby enables the surface to be etched.

3. 发明申请

US20170047204A1 MAGNETRON PLASMA APPARATUS 审中-公开
标题翻译： MAGNETRON等离子体设备
公开(公告)号：US20170047204A1
公开(公告)日：2017-02-16
申请号：US15335584
申请日：2016-10-27
申请人： BB PLASMA DESIGN AB
发明人： Ladislav BARDOS , Hana BARANKOVA
IPC分类号： H01J37/34 , C23C14/34 , C23C14/35 , H01J37/32
CPC分类号： H01J37/3405 , C23C14/3407 , C23C14/35 , C23C14/352 , H01J37/32596 , H01J37/3402 , H01J37/342 , H01J37/3423 , H01J37/3438 , H01J37/345
摘要： A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas.
摘要翻译：由空心阴极等离子体增强的磁控管等离子体装置包括至少一个电连接的一对第一中空阴极板和第二中空阴极板，该第一空心阴极板和第二中空阴极板以至少0.1mm的间隔距离彼此相对放置，在磁控管靶上形成溅射侵蚀区，使得磁控管磁场在板之间的中空阴极狭缝内形成垂直的磁性部件，并且其中板与磁控管靶一起连接到第一发电机，以产生磁性分散在中空阴极狭缝中的第一工作气体中的至少一个中的增强的空心阴极等离子体以及与在第一工作气体和第二工作气体中的至少一个中产生的磁控管等离子体接触的狭缝外部的第二工作气体。

4. 发明授权

US09552967B2 Abatement system having a plasma source 有权
标题翻译：具有等离子体源的减排系统
公开(公告)号：US09552967B2
公开(公告)日：2017-01-24
申请号：US14995187
申请日：2016-01-13
申请人： Applied Materials, Inc.
发明人： Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
IPC分类号： H01L21/465 , H01J37/32 , B01D53/32
CPC分类号： H01J37/32844 , B01D53/323 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2258/0216 , H01J37/32082 , H01J37/32357 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32669 , H01J37/32825 , H01J2237/332 , H01J2237/334 , H01J2237/335 , H01L21/02123 , H01L21/02274 , Y02C20/30
摘要： Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
摘要翻译：本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。减排系统包括具有平行于第一板的第一板和第二板的等离子体源。电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。在该配置中，产生致密等离子体。

5. 发明授权

US09443703B2 Apparatus for generating a hollow cathode arc discharge plasma 有权
标题翻译：用于产生中空阴极电弧放电等离子体的装置
公开(公告)号：US09443703B2
公开(公告)日：2016-09-13
申请号：US14362397
申请日：2012-10-17
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： Henry Morgner , Gösta Mattausch , Christoph Metzner , Michael Junghähnel , Rainer Labitzke , Lars Klose , Torsten Werner , Jörg Kubusch
IPC分类号： H01J7/24 , H01J37/32 , H05H1/48
CPC分类号： H01J37/32568 , H01J37/32055 , H01J37/32064 , H01J37/32596 , H01J37/32669 , H01J37/32807 , H01J2237/0822 , H01J2237/152 , H01J2237/327 , H05H1/48
摘要： An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode.
摘要翻译：一种用于产生中空阴极电弧放电等离子体的装置，包括两个等离子体源，每个等离子体源包括空心阴极和与中空阴极相关联的电极，并且具有延伸穿过电极的开口，其中两个等离子体的中空阴极源极连接到在两个空心阴极之间产生双极，中频脉冲电压的脉冲发生器。这里，在两个等离子体源中的每一个中，空心阴极直接地或与至少一个电流方向限制部件的互连连接到相关联的电极。

6. 发明授权

US09431218B2 Scalable and uniformity controllable diffusion plasma source 有权
标题翻译：可扩展和均匀可控扩散等离子体源
公开(公告)号：US09431218B2
公开(公告)日：2016-08-30
申请号：US14209695
申请日：2014-03-13
申请人： Tokyo Electron Limited
发明人： Jianping Zhao , Lee Chen , Radha Sundararajan , Merritt Funk
IPC分类号： H05B39/00 , H01J37/32
CPC分类号： H01J37/32357 , H01J37/32422 , H01J37/32596
摘要： A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.
摘要翻译：描述了用等离子体处理衬底的方法。特别地，该方法包括在等离子体处理系统中设置衬底，在等离子体处理系统内设置包括至少一个中空阴极的中空阴极等离子体源，并且在多个中空阴极的阴极出口和衬底之间设置栅极。该方法还包括将电网电耦合到电接地，将电压相对于电接地耦合到至少一个空心阴极，以及通过离子诱导的沿着第一轨迹移动的能量电子的二次电子发射在空心阴极中产生等离子体，并且沿着第二轨迹穿过阴极出口和格栅之间的内部空间的第一区域，穿过网格，并且进一步流体地与衬底接触的内部空间的第二区域中扩散较低能量的电子。

7. 发明申请

US20160163519A1 METHOD AND APPARATUS FOR PLASMA IGNITION IN HIGH VACUUM CHAMBERS 审中-公开
标题翻译：高真空气体中等离子体点火的方法与装置
公开(公告)号：US20160163519A1
公开(公告)日：2016-06-09
申请号：US14982260
申请日：2015-12-29
申请人： XEI Scientic, Inc.
发明人： Ronald A. Vane , Michael Cable
IPC分类号： H01J37/32
CPC分类号： H01J37/32862 , H01J37/32082 , H01J37/32357 , H01J37/32449 , H01J37/32596 , H01J2237/335
摘要： A new method and apparatus is described for igniting a plasma from high vacuum. The ignition method uses a small, short term and quick rise in gas flow into plasma chamber while being excited by RF power to ignite the plasma and then drops the gas flow to fixed input flow rate to maintain the plasma. This plasma starting technique does not use electronic means for ignition. The associated apparatus has a gas buffer chamber in fluid communication with the gas source and the plasma chamber, the gas buffer chamber having a small volume gas that is refilled when the device is off. A flow restriction between the gas source and the gas buffer chamber has a maximum flow rate therethrough of 30 sccm (standard cubic centimeters per minute) or less. A valve between the plasma chamber and the gas buffer chamber permits flow between the gas chamber and the plasma chamber, wherein, upon opening the valve, gas is admitted into the plasma chamber and pressure in the plasma chamber rises temporarily causing plasma ignition if the plasma excitation device is energized. The flow restriction maintains the gas flow during plasma operation to maintain a pressure between approximately 0.5 Pa and approximately 6-7 Pa.
摘要翻译：描述了一种用于从高真空点燃等离子体的新方法和装置。点火方法在通过RF功率激发以点燃等离子体然后将气体流量降至固定输入流量以维持等离子体时，使用气体流入等离子体室的小的，短期的和快速的上升。该等离子体启动技术不使用电子点火装置。相关联的装置具有与气体源和等离子体室流体连通的气体缓冲室，气体缓冲室具有小的体积气体，当装置关闭时，其被重新填充。气体源和气体缓冲室之间的流量限制具有30sccm（标准立方厘米每分钟）或更小的最大流速。等离子体室和气体缓冲室之间的阀允许在气体室和等离子体室之间流动，其中，在打开阀时，气体被允许进入等离子体室，等离子体室中的压力暂时升高，如果等离子体励磁装置通电。流量限制保持等离子体操作期间的气体流动，以将压力保持在约0.5Pa和约6-7Pa之间。

8. 发明申请

US20160118231A1 Method and Device for Generating an Electrical Discharge 有权
标题翻译：用于产生放电的方法和装置
公开(公告)号：US20160118231A1
公开(公告)日：2016-04-28
申请号：US14923303
申请日：2015-10-26
申请人： CemeCon AG
发明人： Walter May
IPC分类号： H01J37/34 , C23F4/04 , C23C14/35
CPC分类号： H01J37/3411 , C23C14/35 , C23F4/04 , H01J37/3244 , H01J37/32596 , H01J37/3405 , H05H1/48
摘要： A device and method for generating an electrical discharge are described. A first electrode (30) is operated to be a cathode relative to a second electrode (16). A gas is introduced into the chamber (14) by the first electrode (30). The first electrode (30) has a closed antechamber (32) with a metal wall (34). A tube (36) consisting of a different material than the wall (34) is provided through which the gas from the antechamber (32) is conducted into the chamber (14). A front portion of the tube (36) is embedded in the wall (34) of the antechamber (32). In its rear portion, the tube (36) has a free end projecting into the antechamber (32). A stable electrical discharge can be generated thereby in a particularly easy manner.
摘要翻译：描述了一种用于产生放电的装置和方法。第一电极（30）相对于第二电极（16）操作为阴极。通过第一电极（30）将气体引入室（14）。第一电极（30）具有带有金属壁（34）的封闭的前室（32）。提供由不同于壁（34）的材料构成的管（36），来自前厅（32）的气体通过该导管进入腔室（14）。管（36）的前部嵌入前厅（32）的壁（34）中。在其后部，管（36）具有伸入前厅（32）的自由端。由此可以特别容易地产生稳定的放电。

9. 发明申请

US20160064260A1 ION INJECTOR AND LENS SYSTEM FOR ION BEAM MILLING 有权
公开(公告)号：US20160064260A1
公开(公告)日：2016-03-03
申请号：US14473863
申请日：2014-08-29
申请人： Lam Research Corporation
发明人： Ivan L. Berry, III , Thorsten Lill
IPC分类号： H01L21/67 , H01J37/32 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32174 , H01J37/32357 , H01J37/32422 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32623 , H01J37/32715 , H01L21/3065
摘要： The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.

10. 发明授权

US09230780B2 Hall effect enhanced capacitively coupled plasma source 有权
标题翻译：霍尔效应增强了电容耦合等离子体源
公开(公告)号：US09230780B2
公开(公告)日：2016-01-05
申请号：US14199974
申请日：2014-03-06
申请人： Applied Materials, Inc.
发明人： Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
IPC分类号： C23C16/54 , H01J37/32 , H01J37/16
CPC分类号： H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
摘要： Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
摘要翻译：本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。等离子体源具有平行于第一板的第一板和第二板。电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。在该配置中，产生致密等离子体。

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