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81. 发明申请

US20130249028A1 MAGNETIC MEMORY AND METHOD OF FABRICATING THE SAME 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US20130249028A1
公开(公告)日：2013-09-26
申请号：US13623306
申请日：2012-09-20
申请人： Chikayoshi KAMATA , Minoru Amano , Tadaomi Daibou , Junichi Ito
发明人： Chikayoshi KAMATA , Minoru Amano , Tadaomi Daibou , Junichi Ito
IPC分类号： H01L43/12 , H01L27/22
CPC分类号： H01L43/10 , H01F10/1933 , H01F10/30 , H01F10/3286 , H01F41/302 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer.
摘要翻译：根据实施例的制造磁存储器的方法包括：在第一基板上形成分离层; 在分离层上顺序地形成第一铁磁层，第一非磁性层和第二铁磁层，第一和第二铁磁层中的至少一个具有单晶结构; 在所述第二铁磁层上形成第一导电接合层; 在其上形成有晶体管和布线的第二基板上形成第二导电接合层，所述第二导电接合层电连接到所述晶体管; 布置第一和第二基板，使得第一导电接合层和第二导电接合层彼此相对，并且将第一和第二导电接合层彼此接合; 以及通过使用所述分离层将所述第一基板与所述第一铁磁层分离。

82. 发明申请

US20130234087A1 NON-VOLATILE RESISTANCE CHANGE DEVICE 审中-公开
标题翻译：非易失性电阻变化器件
公开(公告)号：US20130234087A1
公开(公告)日：2013-09-12
申请号：US13605917
申请日：2012-09-06
申请人： Takashi Yamauchi , Yoshifumi Nishi , Jiezhi Chen , Akira Takashima , Minoru Amano
发明人： Takashi Yamauchi , Yoshifumi Nishi , Jiezhi Chen , Akira Takashima , Minoru Amano
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/1233 , H01L45/148 , H01L45/1675
摘要： A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2  AB
摘要翻译：非易失性电阻变化装置包括由金属元件构成的第一电极，第二电极，形成在第一电极和第二电极之间的可变电阻层，在与可变电阻相反的一侧形成在第一电极上的第一布线层和在与可变电阻层相反的一侧形成在第二电极上的第二布线。如果将第一布线的宽度表示为A（nm），则表示为B（nm）的第二布线的宽度以及表示为L0（nm）的第一电极和第二电极之间的距离，下式为满意：3 2 AB

83. 发明申请

US20120236633A1 MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US20120236633A1
公开(公告)日：2012-09-20
申请号：US13228040
申请日：2011-09-08
申请人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
发明人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
IPC分类号： G11C11/15 , G11B5/66
CPC分类号： G11B5/66 , G11C11/161 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁记录元件包括堆叠体。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。第四铁磁层与第三铁磁层层叠。第二非磁性层设置在第三和第四铁磁层之间。第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

84. 发明申请

US20120074511A1 MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US20120074511A1
公开(公告)日：2012-03-29
申请号：US13231894
申请日：2011-09-13
申请人： Shigeki TAKAHASHI , Yuichi OHSAWA , Junichi ITO , Chikayoshi KAMATA , Saori KASHIWADA , Minoru AMANO , Hiroaki YODA
发明人： Shigeki TAKAHASHI , Yuichi OHSAWA , Junichi ITO , Chikayoshi KAMATA , Saori KASHIWADA , Minoru AMANO , Hiroaki YODA
IPC分类号： H01L27/22 , H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.
摘要翻译：根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

85. 发明申请

US20100102407A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20100102407A1
公开(公告)日：2010-04-29
申请号：US12556389
申请日：2009-09-09
申请人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
发明人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
摘要翻译：磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

86. 发明申请

US20100097846A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：US20100097846A1
公开(公告)日：2010-04-22
申请号：US12563465
申请日：2009-09-21
申请人： Kuniaki Sugiura , Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano
发明人： Kuniaki Sugiura , Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/12
摘要： A magnetic memory includes an interlayer insulation layer provided on a substrate, a conductive underlying layer provided on the interlayer insulation layer, and a magnetoresistive element provided on the underlying layer and including two magnetic layers and a nonmagnetic layer interposed between the magnetic layers. The underlying layer has an etching rate lower than an etching rate of each of the magnetic layers.
摘要翻译：磁存储器包括设置在基板上的层间绝缘层，设置在层间绝缘层上的导电性底层，以及设置在下层上的磁阻元件，并且包括两个磁性层和介于该磁性层之间的非磁性层。下层具有比每个磁性层的蚀刻速率低的蚀刻速率。

87. 发明授权

US07692902B2 Tunnel magnetoresistance effect device, and a portable personal device 有权
标题翻译：隧道磁阻效应器，以及便携式个人设备
公开(公告)号：US07692902B2
公开(公告)日：2010-04-06
申请号：US12031472
申请日：2008-02-14
申请人： Minoru Amano , Yoshiaki Saito
发明人： Minoru Amano , Yoshiaki Saito
IPC分类号： G11B5/39 , G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/228
摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.
摘要翻译：一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

88. 发明申请

US20090080239A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20090080239A1
公开(公告)日：2009-03-26
申请号：US12233121
申请日：2008-09-18
申请人： Toshihiko Nagase , Katsuya Nishiyama , Tadashi Kai , Masahiko Nakayama , Makoto Nagamine , Minoru Amano , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Katsuya Nishiyama , Tadashi Kai , Masahiko Nakayama , Makoto Nagamine , Minoru Amano , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/02 , G11B5/706 , G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.
摘要翻译：磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

89. 发明授权

US07266011B2 Magneto-resistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US07266011B2
公开(公告)日：2007-09-04
申请号：US11368496
申请日：2006-03-07
申请人： Minoru Amano , Tatsuya Kishi , Sumio Ikegawa , Yoshiaki Saito , Hiroaki Yoda
发明人： Minoru Amano , Tatsuya Kishi , Sumio Ikegawa , Yoshiaki Saito , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.
摘要翻译：磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

90. 发明授权

US07054187B2 Magnetic memory 有权
公开(公告)号：US07054187B2
公开(公告)日：2006-05-30
申请号：US10981508
申请日：2004-11-05
申请人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
发明人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

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