专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08508979B2 Magnetic recording element and nonvolatile memory device 失效
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US08508979B2
公开(公告)日：2013-08-13
申请号：US13228040
申请日：2011-09-08
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
IPC分类号： G11C11/00
CPC分类号： G11B5/66 , G11C11/161 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁记录元件包括堆叠体。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。第四铁磁层与第三铁磁层层叠。第二非磁性层设置在第三和第四铁磁层之间。第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

2. 发明授权

US08488375B2 Magnetic recording element and nonvolatile memory device 有权
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US08488375B2
公开(公告)日：2013-07-16
申请号：US13037592
申请日：2011-03-01
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228
摘要： According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.
摘要翻译：根据一个实施例，磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。第一堆叠单元包括第一铁磁层，第二铁磁层和第一非磁性层。第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。第二堆叠单元包括第三铁磁层，第四铁磁层和第二非磁性层。第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。第一方向与第二方向相反。

3. 发明申请

US20120244639A1 METHOD OF MANUFACTURING MAGNETIC MEMORY 失效
标题翻译：制造磁记忆的方法
公开(公告)号：US20120244639A1
公开(公告)日：2012-09-27
申请号：US13226868
申请日：2011-09-07
申请人： Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01L29/82
摘要： According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
摘要翻译：根据一个实施例，一种制造磁存储器的方法，该方法包括形成具有可变磁化强度的第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层，具有不变磁化的磁性层，在第二磁性层上形成硬掩模层作为掩模，通过使用硬掩模层的掩模对第二磁性层进行构图，并使用硬掩模的掩模执行GCIB照射层，图案后。

4. 发明申请

US20090052237A1 MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY APPARATUS 审中-公开
标题翻译：磁记忆装置和磁记忆装置
公开(公告)号：US20090052237A1
公开(公告)日：2009-02-26
申请号：US12107127
申请日：2008-04-22
申请人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi , Yuichi Ohsawa , Daisuke Saida
发明人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi , Yuichi Ohsawa , Daisuke Saida
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic memory element includes a laminated construction of a first electrode, a first pinned layer, a first intermediate layer, a memory layer, a second intermediate layer, a second pinned layer and a second electrode, and a third electrode coupled to the first intermediate layer and not directly coupled to the memory layer. The magnetization directions of the first pinned layer, the second pinned layer, and the memory layer are parallel or antiparallel to each other. The magnetization direction of the memory layer takes a first direction when the current is passed with a first polarity so that the current flowing through the first pinned layer exceeds a first threshold. The magnetization direction of the memory layer takes a second direction when the current is passed with a second polarity so that the current flowing through the first pinned layer exceeds a second threshold.
摘要翻译：磁存储元件包括第一电极，第一被钉扎层，第一中间层，存储层，第二中间层，第二被钉扎层和第二电极的层压结构，以及耦合到第一中间体层并且不直接耦合到存储器层。第一被钉扎层，第二钉扎层和存储层的磁化方向彼此平行或反平行。当电流以第一极性通过时，存储层的磁化方向取第一方向，使得流过第一被钉扎层的电流超过第一阈值。当电流以第二极性通过时，存储层的磁化方向采取第二方向，使得流过第一被钉扎层的电流超过第二阈值。

5. 发明授权

US09019757B2 Spin wave element 有权
标题翻译：自旋波元件
公开(公告)号：US09019757B2
公开(公告)日：2015-04-28
申请号：US12880606
申请日：2010-09-13
申请人： Shiho Nakamura , Daisuke Saida , Hirofumi Morise , Tsuyoshi Kondo
发明人： Shiho Nakamura , Daisuke Saida , Hirofumi Morise , Tsuyoshi Kondo
IPC分类号： G11C11/16 , G11C11/14 , G01R33/12 , H01L27/22 , H01L29/66
CPC分类号： G01R33/1284 , G11C11/14 , G11C11/161 , H01L27/222 , H01L27/226 , H01L29/66984
摘要： A spin wave element includes a substrate, a multilayer, a detecting portion, and two or more input portions. The multilayer having a lamination direction thereof is formed on the substrate and includes a first ferromagnetic layer. The first ferromagnetic layer has magnetization whose direction is in the lamination direction. The detecting portion and the input portions are formed on the multilayer and separated from each other by a first nonmagnetic layer. In addition, a portion of an outer edge of the multilayer viewed from the lamination direction makes a portion of one ellipsoid. The detecting portion and one of the input portions are located on the long axis of the one ellipsoid. The portion of the one ellipsoid is located on a side of one of the input portions.
摘要翻译：自旋波元件包括基板，多层，检测部分和两个或更多个输入部分。具有层压方向的多层形成在基板上，并且包括第一铁磁层。第一铁磁层具有方向在层叠方向上的磁化。检测部分和输入部分形成在多层上并且通过第一非磁性层彼此分离。此外，从层叠方向观察的多层的外边缘的一部分形成一个椭圆体的一部分。检测部分和输入部分之一位于一个椭圆体的长轴上。一个椭圆体的一部分位于一个输入部分的一侧。

6. 发明申请

US20130070523A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130070523A1
公开(公告)日：2013-03-21
申请号：US13416408
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. A magnetization of the first ferromagnetic layer is fixed in a direction perpendicular to the first ferromagnetic layer. A magnetization of the second ferromagnetic layer is variable. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit stacked with the first stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer. A magnetization of the third ferromagnetic layer is variable. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. A magnetization of the fourth ferromagnetic layer is fixed in a direction perpendicular to the fourth ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers.
摘要翻译：根据一个实施例，磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一铁磁层的磁化在垂直于第一铁磁层的方向固定。第二铁磁层的磁化是可变的。第一非磁性层设置在第一和第二铁磁层之间。与第一堆叠单元堆叠的第二堆叠单元包括第三和第四铁磁层和第二非磁性层。第三铁磁层的磁化是可变的。第四铁磁层与第三铁磁层层叠。第四铁磁层的磁化在垂直于第四铁磁层的方向固定。第二非磁性层设置在第三和第四铁磁层之间。

7. 发明申请

US20130070522A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20130070522A1
公开(公告)日：2013-03-21
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译：根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二铁磁层具有通过通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。振荡的频率根据第二铁磁层的磁化方向而变化。控制单元包括读出第二铁磁层的磁化的读取单元。

8. 发明申请

US20130069185A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130069185A1
公开(公告)日：2013-03-21
申请号：US13416724
申请日：2012-03-09
申请人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。第二和第三铁磁层的磁化是可变的。第一和第四铁磁层的磁化在垂直于层表面的方向固定。当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。

9. 发明申请

US20120243308A1 MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁性元件和非易失性存储器件
公开(公告)号：US20120243308A1
公开(公告)日：2012-09-27
申请号：US13227959
申请日：2011-09-08
申请人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
发明人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。中间互连设置在导电层之间。第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

10. 发明授权

US08085582B2 Magnetic recording device and magnetic recording apparatus 有权
标题翻译：磁记录装置和磁记录装置
公开(公告)号：US08085582B2
公开(公告)日：2011-12-27
申请号：US12216918
申请日：2008-07-11
申请人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
发明人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/02
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.
摘要翻译：磁记录装置包括：层叠体，包括：第一铁磁层，其具有基本上沿第一方向固定的磁化; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 和具有可变磁化方向的第三铁磁层。第二铁磁层的磁化方向可以响应于电流的取向而被确定，通过使电子通过沿着大体上垂直于层叠体的层的膜平面的方向的电流进行自旋极化来作用于第二铁磁层，并且通过允许由第三铁磁层的磁化进行而产生的磁场作用在第二铁磁层上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式