专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08814997B2 Electroless plating pretreatment agent, electroless plating method using same, and electroless plated object 有权
标题翻译：无电镀预处理剂，使用其的化学镀方法和无电镀物
公开(公告)号：US08814997B2
公开(公告)日：2014-08-26
申请号：US13501139
申请日：2011-03-14
申请人： Toru Imori , Jun Suzuki , Ryu Murakami , Akihiro Aiba , Junichi Ito
发明人： Toru Imori , Jun Suzuki , Ryu Murakami , Akihiro Aiba , Junichi Ito
IPC分类号： C23C18/30 , B05D1/18 , B05D3/10 , C23C18/18 , C23C18/16 , C23C18/20
CPC分类号： C23C18/1608 , C23C18/1635 , C23C18/1879 , C23C18/1882 , C23C18/2066 , C23C18/30
摘要： An electroless plating pretreatment agent that can retain stably Pd(II) over a long period of time in an organic solvent, an electroless plating method using the same that is capable of forming an electroless plated film having excellent adhesion, and an electroless plated object. The electroless plating pretreatment agent contains an organic palladium compound and a coordination compound having a functional group with a metal-capturing capability dissolved in an organic solvent, the coordination compound being selected from the group consisting of the imidazole analogs, polyethyleneamines, ethyleneimines and polyethyleneimines.
摘要翻译：一种能够在有机溶剂中长时间稳定地保持Pd（II）的化学镀预处理剂，使用该化学镀方法能够形成具有优异粘接性的无电解电镀膜的化学镀方法，以及无电电镀对象。化学镀预处理剂含有有机钯化合物和具有溶解在有机溶剂中的具有金属捕获能力的官能团的配位化合物，配位化合物选自咪唑类似物，聚乙烯胺，乙烯亚胺和聚乙烯亚胺。

2. 发明授权

US08736057B2 Substrate and manufacturing method therefor 有权
标题翻译：基板及其制造方法
公开(公告)号：US08736057B2
公开(公告)日：2014-05-27
申请号：US12734560
申请日：2008-11-26
申请人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
发明人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/288 , C23C14/0036 , C23C14/165 , C23C18/1601 , C23C18/1637 , C23C18/165 , C23C18/1653 , C23C18/40 , C23C18/54 , H01L21/2855 , H01L21/76843 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
摘要翻译：在基材上具有防止含有选自钨，钼，铌中的一种以上的金属元素的铜扩散用阻挡膜的基板，具有铂，金，银，钯等无电镀的催化功能的金属元素，以及选自钨，钼和铌的上述一种或多种金属元素的氮化物形式的氮。通过使用含有选自钨，钼和铌中的一种或多种金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造防止铜扩散的阻挡膜。

3. 发明授权

US08660453B2 Image forming apparatus 有权
标题翻译：图像形成装置
公开(公告)号：US08660453B2
公开(公告)日：2014-02-25
申请号：US12955334
申请日：2010-11-29
申请人： Yukiyoshi Oda , Atsushi Ohta , Ken Nozawa , Junichi Ito
发明人： Yukiyoshi Oda , Atsushi Ohta , Ken Nozawa , Junichi Ito
IPC分类号： G03G15/00
CPC分类号： G03G21/1652 , G03G15/0863 , G03G15/0868 , G03G15/0875 , G03G15/0886 , G03G21/1821 , G03G21/1871 , G03G21/1878 , G03G2215/0697 , G03G2221/166 , G03G2221/1823
摘要： An image forming apparatus includes an image forming apparatus main body, and a replaceable part detachably attached to the image forming apparatus main body and movable in attaching-and-detaching direction to be attached to or detached from the image forming apparatus main body. The replaceable part includes a storage portion, the storage portion including a memory for storing information of the replaceable part and/or the image forming apparatus main body, and a first contact portion electrically connected to the memory. The image forming apparatus main body includes a second contact portion that electrically contacts the first contact portion. The first contact portion has an inclination at a predetermined angle with respect to the attaching-and-detaching direction.
摘要翻译：图像形成装置包括图像形成装置主体和可拆卸地附接到图像形成装置主体并且能够沿着安装和拆卸方向移动以便附接到图像形成装置主体或从图像形成装置主体拆卸的可更换部件。可替换部分包括存储部分，存储部分包括用于存储可替换部件和/或图像形成装置主体的信息的存储器，以及电连接到存储器的第一接触部分。图像形成装置主体包括与第一接触部分电接触的第二接触部分。第一接触部分相对于安装和拆卸方向具有预定角度的倾斜度。

4. 发明授权

US08420499B2 Concave-convex pattern forming method and magnetic tunnel junction element forming method 有权
标题翻译：凹凸图案形成方法和磁隧道结元件形成方法
公开(公告)号：US08420499B2
公开(公告)日：2013-04-16
申请号：US13300062
申请日：2011-11-18
申请人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
发明人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
IPC分类号： H01L21/76
CPC分类号： G11B5/855 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.
摘要翻译：根据实施例的形成凹凸图案的方法包括：在基材上形成引导图案，所述引导图案具有凸部; 在引导图案上形成形成层，所述形成层包括通过层叠第一层和第二层而形成的层叠结构，所述第一层包括选自第一金属元素和准金属元素中的至少一种元素，所述第二层包括与第一金属元件不同的第二金属元件; 通过在形成层上进行蚀刻，仅选择性地离开形成层在凸部的侧面; 去除引导图案; 并且通过在基材上进行蚀刻，将其余形成层用作掩模，在基材中形成凹凸图案。

5. 发明申请

US20130070523A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130070523A1
公开(公告)日：2013-03-21
申请号：US13416408
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. A magnetization of the first ferromagnetic layer is fixed in a direction perpendicular to the first ferromagnetic layer. A magnetization of the second ferromagnetic layer is variable. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit stacked with the first stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer. A magnetization of the third ferromagnetic layer is variable. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. A magnetization of the fourth ferromagnetic layer is fixed in a direction perpendicular to the fourth ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers.
摘要翻译：根据一个实施例，磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一铁磁层的磁化在垂直于第一铁磁层的方向固定。第二铁磁层的磁化是可变的。第一非磁性层设置在第一和第二铁磁层之间。与第一堆叠单元堆叠的第二堆叠单元包括第三和第四铁磁层和第二非磁性层。第三铁磁层的磁化是可变的。第四铁磁层与第三铁磁层层叠。第四铁磁层的磁化在垂直于第四铁磁层的方向固定。第二非磁性层设置在第三和第四铁磁层之间。

6. 发明申请

US20130070522A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20130070522A1
公开(公告)日：2013-03-21
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译：根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二铁磁层具有通过通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。振荡的频率根据第二铁磁层的磁化方向而变化。控制单元包括读出第二铁磁层的磁化的读取单元。

7. 发明申请

US20130069185A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130069185A1
公开(公告)日：2013-03-21
申请号：US13416724
申请日：2012-03-09
申请人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。第二和第三铁磁层的磁化是可变的。第一和第四铁磁层的磁化在垂直于层表面的方向固定。当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。

8. 发明申请

US20120243308A1 MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁性元件和非易失性存储器件
公开(公告)号：US20120243308A1
公开(公告)日：2012-09-27
申请号：US13227959
申请日：2011-09-08
申请人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
发明人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。中间互连设置在导电层之间。第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

9. 发明申请

US20120241881A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241881A1
公开(公告)日：2012-09-27
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

10. 发明授权

US08247301B2 Substrate and manufacturing method therefor 有权
标题翻译：基板及其制造方法
公开(公告)号：US08247301B2
公开(公告)日：2012-08-21
申请号：US12734590
申请日：2008-11-26
申请人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
发明人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/2855 , C23C18/1637 , C23C18/165 , C23C18/1653 , C23C18/40 , H01L21/288 , H01L21/76843 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
摘要翻译：在基材上具有防止含有选自钨，钼和铌中的一种或多种金属元素的铜扩散用阻挡膜的基板，在无电解电镀如钌，铑和铱中具有催化功能的金属元素，以及氮以上述一种或多种选自钨，钼和铌的金属元素的氮化物的形式存在。通过使用含有选自钨，钼和铌中的一种或多种金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造防止铜扩散的阻挡膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式