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1. 发明申请

US20130277646A1 DISPLAY PANEL AND DISPLAY DEVICE 有权
标题翻译：显示面板和显示设备
公开(公告)号：US20130277646A1
公开(公告)日：2013-10-24
申请号：US13721925
申请日：2012-12-20
申请人： Nobuyoshi SAITO , Tomomasa Ueda , Hajime Yamaguchi , Kentaro Miura , Shintaro Nakano , Tatsunori Sakano
发明人： Nobuyoshi SAITO , Tomomasa Ueda , Hajime Yamaguchi , Kentaro Miura , Shintaro Nakano , Tatsunori Sakano
IPC分类号： H01L51/52
CPC分类号： H01L51/52 , H01L27/3227 , H01L27/326
摘要： According to one embodiment, a display panel includes a substrate, a switching element, a pixel electrode, an organic light emitting layer, an opposite electrode, a detecting electrode, and an insulating layer. The substrate has a major surface. The switching element is provided on the major surface. The switching element includes a semiconductor layer. The pixel electrode is provided on the major surface. The pixel electrode is electrically connected to the switching element. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The detecting electrode is provided between the substrate and at least a part of the pixel electrode. The detecting electrode includes at least one element included in the semiconductor layer. The insulating layer is provided between the pixel electrode and the detecting electrode.
摘要翻译：根据一个实施例，显示面板包括基板，开关元件，像素电极，有机发光层，相对电极，检测电极和绝缘层。基板具有主表面。开关元件设置在主表面上。开关元件包括半导体层。像素电极设置在主表面上。像素电极电连接到开关元件。有机发光层设置在像素电极上。相对电极设置在有机发光层上。检测电极设置在基板和像素电极的至少一部分之间。检测电极包括包含在半导体层中的至少一个元件。绝缘层设置在像素电极和检测电极之间。

2. 发明申请

US20110164025A1 DISPLAY DEVICE AND METHOD OF DRIVING THE SAME 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US20110164025A1
公开(公告)日：2011-07-07
申请号：US13052442
申请日：2011-03-21
申请人： Nobuyoshi SAITO , Tomomasa Ueda , Yujiro Hara
发明人： Nobuyoshi SAITO , Tomomasa Ueda , Yujiro Hara
IPC分类号： G09G5/00
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/043 , H01L51/001 , H01L51/0011 , H01L51/56
摘要： [Problem] By improving the accuracy of compensation for a threshold voltage shift of a driving transistor that controls a current supplied to a current-driven type self light-emitting element, excellent display performance is maintained over an extended period of time.[Solving Means] A pixel circuit includes a driving transistor Dr connected at its drain to a light-emitting element 11 and connected at its source to a power supply line NL; a capacitor Ck connected at its one end to a gate of the driving transistor Dr; a threshold voltage detection transistor Det connected between the drain of the driving transistor Dr and an other end of the capacitor Ck; and a reset transistor Rst connected between the source and gate of the driving transistor Dr. By charging the gate of the driving transistor Dr to a predetermined value through the reset transistor Rst and discharging charge at the other end of the capacitor Ck through the threshold voltage detection transistor Det, a potential difference between both ends of the capacitor Ck is set as a threshold voltage of the driving transistor Dr.
摘要翻译： [问题]通过提高控制提供给电流驱动型自发光元件的电流的驱动晶体管的阈值电压偏移的补偿精度，能够在延长的时间段内保持优异的显示性能。 [解决方案]像素电路包括在其漏极连接到发光元件11并在其源极处连接到电源线NL的驱动晶体管Dr; 在其一端连接到驱动晶体管Dr的栅极的电容器Ck; 连接在驱动晶体管Dr的漏极和电容器Ck的另一端之间的阈值电压检测晶体管Det; 以及连接在驱动晶体管Dr的源极和栅极之间的复位晶体管Rst通过复位晶体管Rst将驱动晶体管Dr的栅极充电至预定值，并通过阈值电压对电容器Ck的另一端放电电荷检测晶体管Det，将电容器Ck的两端之间的电位差设定为驱动晶体管Dr的阈值电压

3. 发明授权

US07848136B2 Magnetic memory 失效
标题翻译：磁记忆
公开(公告)号：US07848136B2
公开(公告)日：2010-12-07
申请号：US12100969
申请日：2008-04-10
申请人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
发明人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： G11C11/15
CPC分类号： G11B5/39
摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.
摘要翻译：可以减小写入电流而不引起写入特性的波动。磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。

4. 发明申请

US20100127266A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：薄膜晶体管，其制造方法，显示装置及其制造方法
公开(公告)号：US20100127266A1
公开(公告)日：2010-05-27
申请号：US12620112
申请日：2009-11-17
申请人： Nobuyoshi SAITO , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
发明人： Nobuyoshi SAITO , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
IPC分类号： H01L33/00 , H01L29/786 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/127 , H01L27/3244 , H01L27/3248 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2227/323
摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.
摘要翻译：薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。源电极与栅电极的一端相对。漏电极与栅电极的另一端相对。另一端与一端相反。漏极与源电极分开。沟道保护层覆盖半导体层的一部分的侧面的至少一部分。半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

5. 发明申请

US20060132984A1 Magnetic memory device having yoke layer on write interconnection and method of manufacturing the same 有权
标题翻译：具有写入互连上的磁轭层的磁性存储器件及其制造方法
公开(公告)号：US20060132984A1
公开(公告)日：2006-06-22
申请号：US11060301
申请日：2005-02-18
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masatoshi Yoshikawa
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masatoshi Yoshikawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228 , H01L43/12
摘要： A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.
摘要翻译：一种磁存储器件包括磁阻效应元件和布置在磁阻效应元件下方并具有第一互连层和第一磁轭层的第一写入互连，第一互连层具有向磁阻效应元件突出的部分，以及所述第一轭层包括第一，第二和第三区域。并且该器件包括布置在磁阻效应元件上方并具有第二互连层和第二磁轭层的第二写入互连，第二互连层具有朝向磁阻效应元件突出的部分，第二磁轭层包括第四配线，第五和第六个地区。

6. 发明授权

US07064402B2 Magnetic random access memory 失效
公开(公告)号：US07064402B2
公开(公告)日：2006-06-20
申请号：US11189851
申请日：2005-07-27
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

7. 发明授权

US07054187B2 Magnetic memory 有权
公开(公告)号：US07054187B2
公开(公告)日：2006-05-30
申请号：US10981508
申请日：2004-11-05
申请人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
发明人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

8. 发明申请

US20050259464A1 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US20050259464A1
公开(公告)日：2005-11-24
申请号：US11189851
申请日：2005-07-27
申请人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
发明人： Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： H01L27/105 , G11B5/33 , G11C11/14 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.
摘要翻译：关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择至少相对于第一绝缘层和第二绝缘层。

9. 发明授权

US06949779B2 Magnetoresistive element and magnetic memory 有权
公开(公告)号：US06949779B2
公开(公告)日：2005-09-27
申请号：US10653098
申请日：2003-09-03
申请人： Tadashi Kai , Shigeki Takahashi , Tomomasa Ueda , Tatsuya Kishi , Yoshiaki Saito
发明人： Tadashi Kai , Shigeki Takahashi , Tomomasa Ueda , Tatsuya Kishi , Yoshiaki Saito
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L29/76
CPC分类号： G11C11/15 , G11C11/16 , Y10T428/24917
摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

10. 发明申请

US20050141148A1 Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：US20050141148A1
公开(公告)日：2005-06-30
申请号：US11000093
申请日：2004-12-01
申请人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
发明人： Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao , Hiroaki Yoda
IPC分类号： G11B5/33 , G11B5/39
CPC分类号： G11B5/39
摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.
摘要翻译：可以减小写入电流而不引起写入特性的波动。磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。

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