专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20040035826A1 Etching method for insulating film 审中-公开
标题翻译：绝缘膜蚀刻方法
公开(公告)号：US20040035826A1
公开(公告)日：2004-02-26
申请号：US10451107
申请日：2003-06-19
发明人： Kenji Adachi , Noriyuki Kobayashi
IPC分类号： C23F001/00
CPC分类号： H01L21/31116 , H01L21/31056
摘要： A mixed gas containing at least a first fluorocarbon gas having Cnull4 and a C/F ratio of 0.625 or higher, a second fluorocarbon gas having Fnull4 and a C/F ratio of 0.5 or lower, an Ar gas, and an O2 gas is used as an etching gas to etch an insulating film formed of a silicon oxide film or the like. This can improve an etching rate and a resist mask selection ratio, and in addition, prevent the formation of a contact hole in a bowing shape even when a high-aspect-ratio contact hole is formed.
摘要翻译：至少含有C> = 4且C / F比为0.625以上的第一碳氟化合物气体，F> = 4，C / F比为0.5以下的第二碳氟化合物气体，Ar气体，并且使用O 2气体作为蚀刻气体来蚀刻由氧化硅膜等形成的绝缘膜。这可以提高蚀刻速度和抗蚀剂掩模选择比，并且此外，即使形成高纵横比接触孔，也防止形成弯曲形状的接触孔。

72. 发明申请

US20040026372A1 Plasma treatment method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20040026372A1
公开(公告)日：2004-02-12
申请号：US10367246
申请日：2003-02-14
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroto Takenaka , Hiroshi Nishikawa
IPC分类号： C23F001/00 , C23C016/00
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
摘要翻译：一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活物种影响晶圆。

73. 发明申请

US20040026369A1 Method of etching magnetic materials 审中-公开
标题翻译：磁性材料蚀刻方法
公开(公告)号：US20040026369A1
公开(公告)日：2004-02-12
申请号：US10218244
申请日：2002-08-12
发明人： Chentsau Ying , Xiaoyi Chen , Padmapani C. Nallan , Ajay Kumar
IPC分类号： C23F001/00 , B44C001/22 , C03C015/00 , C03C025/68
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23F4/00 , H01F41/308
摘要： A method of etching a layer of magnetic material using a hard mask and an etchant comprising BCl3. The method finds use in etching magnetic materials during fabrication of magneto-resistive random access memory (MRAM) devices.
摘要翻译：使用硬掩模和包含BCl 3的蚀刻剂蚀刻磁性材料层的方法。该方法在制造磁阻随机存取存储器（MRAM）器件期间用于蚀刻磁性材料。

74. 发明申请

US20040026368A1 Monitoring substrate processing by detecting reflectively diffracted light 失效
$Monitoring substrate processing by detecting reflectively diffracted light$
标题翻译：通过检测反射衍射光来监测基板处理
公开(公告)号：US20040026368A1
公开(公告)日：2004-02-12
申请号：US10215065
申请日：2002-08-07
申请人： Applied Materials, Inc.
发明人： Michael S. Barnes , John P. Holland , David S.L. Mui , Wei Liu
IPC分类号： C23F001/00
CPC分类号： H01J37/321 , C23C14/547 , C23C16/52 , G01N21/4788 , G01N21/9501 , G01N21/956 , H01J37/32935
摘要： A substrate is placed in a process zone and an energized process gas is maintained in the process zone to process the substrate. A light beam is reflectively diffracted from a pattern of features of the substrate being processed, the reflected beam is monitored, and a signal is generated in relation to the monitored beam. During processing, a width of the features of the substrate can change. The generated signal is evaluated to detect the occurrence of a change in the width of the features.
摘要翻译：将基底放置在处理区中，并且在处理区中保持通电的工艺气体以处理衬底。光束从被处理的衬底的特征的图案反射衍射，监测反射光束，并且相对于被监视的光束产生信号。在处理期间，衬底的特征的宽度可以改变。评估产生的信号以检测特征宽度变化的发生。

75. 发明申请

US20040026361A1 Surface acoustic wave device its manufacturing method and electronic circuit device 有权
标题翻译：表面声波装置其制造方法和电子电路装置
公开(公告)号：US20040026361A1
公开(公告)日：2004-02-12
申请号：US10399305
申请日：2003-08-15
发明人： Akihiko Namba , Keiji Onishi , Yasuhiro Sugaya , Katsunori Moritoki
IPC分类号： C23F001/00 , H01B013/00
CPC分类号： H03H9/0542 , H01L21/568 , H01L21/6835 , H01L24/97 , H01L2224/16 , H01L2224/16245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01021 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/15153 , H01L2924/1517 , H01L2924/16195 , H01L2924/16235 , H01L2924/181 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H03H3/08 , H03H9/059 , H03H9/1085 , H03H9/1092 , Y10T29/42 , Y10T29/49005 , Y10T29/49144 , Y10T29/49146 , Y10T29/49158 , Y10T29/49171 , H01L2224/81 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A surface acoustic wave device which occupies a small mounting area and has a low profile, yet having an improved reliability, and can be made available at low cost. The surface acoustic wave device comprises a piezoelectric substrate 1, a function region 2 formed of comb-like electrodes for exciting surface acoustic wave provided on a main surface of the piezoelectric substrate 1, a space formation member 3 covering the function region 2, a plurality of bump electrodes 4 provided on a main surface of the piezoelectric substrate 1 and a terminal electrode 5 provided opposed to the main surface of piezoelectric substrate 1. The bump electrode 4 and the terminal electrode 5 are having a direct electrical connection, and a space between piezoelectric substrate 1 and terminal electrode 5 is filled with resin 6. When the above-configured acoustic wave device is applied for a frequency filter, a resonator, in a portable telephone unit, a keyless entry or the like communication apparatus, the overall size of such apparatus can be reduced and a higher reliability is implemented.
摘要翻译：表面声波装置占据小的安装面积并且具有低轮廓，但具有改进的可靠性，并且可以以低成本获得。表面声波装置包括压电基板1，由设置在压电基板1的主表面上的用于激发表面声波的梳状电极形成的功能区域2，覆盖功能区域2的空间形成部件3，多个设置在压电基板1的主表面上的凸块电极4和与压电基板1的主表面相对设置的端子电极5.凸块电极4和端子电极5具有直接电连接，压电基板1和端子电极5填充有树脂6.当将上述构造的声波装置应用于频率滤波器，便携式电话单元中的谐振器，无钥匙进入等通信装置时，总体尺寸可以减少这种装置并实现更高的可靠性。

76. 发明申请

US20040020894A1 High selectivity etching of a lead overlay structure 失效
标题翻译：引线覆盖结构的高选择性蚀刻
公开(公告)号：US20040020894A1
公开(公告)日：2004-02-05
申请号：US10211749
申请日：2002-08-02
申请人： Veeco Instruments, Inc.
发明人： Kurt E. Williams , Hariharakeshara Hegde
IPC分类号： C03C025/68 , H01B013/00 , C23F001/00 , B44C001/22 , C03C015/00
CPC分类号： B82Y25/00 , B82Y10/00 , C23F4/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01L21/0332 , H01L21/32136 , H01L21/32139
摘要： A multi-step etching process for a lead overlay structure such as a thin-film magnetic head structure using secondary ion mass spectroscopy (SIMS) whereby high selectivity of a lead material or other high conductivity metal layer is realized versus that of a metallic mask material and stopping layer. The first step includes patterning the mask layer using IBE or RIE. Advantageously, a photoresist layer is present over a portion of the mask layer and is left in place to be removed in a subsequent step. The second step includes etching the high conductivity metal layer using CAIBE or RIBE with an inert/reactive gas mixture and using SIMS to detect when the stopping layer is reached. The gas mixture comprises an inert gas and a reactive gas that is either oxygen, nitrogen, or a combination of oxygen and nitrogen, whereby the ionized gas mixture contains ions that increase the sensitivity of the SIMS yield of the stopping layer such that the end point of the high conductivity metal layer is detected and etching can then be stopped at the appropriate time. The chemistry of the second etching step is effective to also remove the photoresist at a high etch rate. The third step includes etching the stopping layer with IBE using an inert gas, advantageously with a high angle of about 40-70null. The third step may also be effective to etch debris redeposited on the sidewalls of the structure, and to remove all or a portion of the remaining mask layer.
摘要翻译：用于铅覆盖结构的多步骤蚀刻工艺，例如使用二次离子质谱（SIMS）的薄膜磁头结构，由此实现铅材料或其它高导电性金属层的高选择性与金属掩模材料和停止层。第一步包括使用IBE或RIE对掩模层进行图案化。有利地，光致抗蚀剂层存在于掩模层的一部分上，并且留在适当位置以在随后的步骤中被去除。第二步包括使用CAIBE或RIBE用惰性/反应性气体混合物蚀刻高导电性金属层，并使用SIMS来检测何时达到停止层。气体混合物包括惰性气体和氧气，氮气或氧气和氮气的组合的反应性气体，由此电离气体混合物包含提高停止层的SIMS产率的灵敏度的离子，使得终点检测高导电性金属层，然后可以在适当的时刻停止蚀刻。第二蚀刻步骤的化学性质也有效地以高蚀刻速率除去光致抗蚀剂。第三步包括用惰性气体，有利地以大约40-70°的高角蚀刻IBE的阻挡层。第三步骤也可以有效地蚀刻沉积在结构的侧壁上的碎片，并且去除剩余的掩模层的全部或一部分。

77. 发明申请

US20040020891A1 Low Cu percentages for reducing shorts in AlCu lines 失效
标题翻译：用于减少AlCu线中短路的低Cu百分比
公开(公告)号：US20040020891A1
公开(公告)日：2004-02-05
申请号：US10207773
申请日：2002-07-31
申请人： Infineon Technologies North America Corp. , International Business Machines Corporation or ITR, LP; IT AG; UMC, etc.
发明人： Roy C. Iggulden , Padraic Shafer , Kwong Hon Wong , Michael M. Iwatake , Jay W. Strane , Thomas Goebel , Donna D. Miura , Chet Dziobkowski , Wemer Robl , Brian Hughes
IPC分类号： C23F001/00
CPC分类号： H01L21/32051 , H01L21/76838
摘要： In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal.
摘要翻译：在微电子器件形成期间制造金属化结构的方法中，改进后续进行反应离子蚀刻的覆盖金属沉积层中的金属短路，包括：a）沉积在第一底层上，与底层电接触的合金金属的电短路减少量; b）沉积光致抗蚀剂并曝光和显影以在包含合金金属的电短缩量的橡皮布铝化合物上留下光刻胶图案; 和c）反应离子蚀刻，以获得含有合金金属线的铝化合物，其特征在于少于铝化合物的短路量，而没有所述合金金属的减少量。

78. 发明申请

US20040011761A1 METHOD FOR USING DRIE WITH REDUCED LATERAL ETCHING 有权
标题翻译：使用DRIE减少侧向蚀刻的方法
公开(公告)号：US20040011761A1
公开(公告)日：2004-01-22
申请号：US10216525
申请日：2002-08-09
发明人： Andrew S. Dewa
IPC分类号： C23F001/00
CPC分类号： B81C1/00619 , B81C1/0088
摘要： A process for manufacturing a wafer having a multiplicity of MEMS devices such as mirrors with gimbals formed thereon is disclosed. A silicon wafer having a thickness less than about 300 nullm is attached to a carrier or support wafer by a layer of bonding agent such as a layer or coating of photo-resist. The MEMS devices such as a gimbal mirror are formed on the silicon wafer by providing a mask and etching through the wafer with a DRIE process. Undesired lateral etching at the bottom of the wafer caused by the formation of an electrical charge at the bonding layer is eliminated or substantially reduced by patterning the layer of photo-resist used as the bonding agent such that areas of the support wafer not covered by the bonding layer are aligned with selected etch lines which etch completely through the silicon wafer to form devices.
摘要翻译：公开了一种制造具有多个MEMS装置的晶片的方法，例如在其上形成有万向面的反射镜。厚度小于约300μm的硅晶片通过诸如光刻胶层或涂层之类的粘合剂层附着在载体或支撑晶片上。通过提供掩模并通过DRIE工艺蚀刻通过晶片，在硅晶片上形成诸如万向反射镜的MEMS器件。通过图案化用作粘合剂的光致抗蚀剂层，在结合层处形成电荷引起的晶片底部的不期望的横向蚀刻被消除或基本上减少，使得支撑晶片的区域不被接合层与选定的蚀刻线对准，其蚀刻完全通过硅晶片以形成器件。

79. 发明申请

US20040009669A1 Method of removing polymer and apparatus for doing the same 失效
标题翻译：去除聚合物的方法及其做法
公开(公告)号：US20040009669A1
公开(公告)日：2004-01-15
申请号：US10615806
申请日：2003-07-10
申请人： NEC ELECTRONICS CORPORATION
发明人： Hiroyuki Sonoda , Hidehiko Kawaguchi , Morimitsu Tanaka , Hiroki Ohno
IPC分类号： C23F001/00 , B44C001/22 , C03C015/00 , C03C025/68 , H01L021/306
CPC分类号： H01L21/02071 , B08B3/08 , H01L21/67028
摘要： A method of removing polymer adhered to a sidewall of an etched metal layer formed on a substrate, includes (a) dissolving the polymer by providing chemicals onto a surface of the substrate, and (b) rinsing the chemicals out of the substrate by providing pure water onto a surface of the substrate, wherein at least a part of the step (a) is carried out in oxidation atmosphere.
摘要翻译：一种除去聚合物附着在形成在基底上的蚀刻金属层的侧壁上的方法包括：（a）通过在基底表面上提供化学药剂溶解聚合物，和（b）通过提供纯的水在基材的表面上，其中步骤（a）的至少一部分在氧化气氛中进行。

80. 发明申请

US20040007561A1 Method for plasma etching of high-K dielectric materials 审中-公开
标题翻译：高K电介质材料等离子体蚀刻方法
公开(公告)号：US20040007561A1
公开(公告)日：2004-01-15
申请号：US10194566
申请日：2002-07-12
申请人： Applied Materials, Inc.
发明人： Padmapani Nallan , Guangxiang Jin , Ajay Kumar
IPC分类号： C23F001/00 , B44C001/22 , C03C015/00 , C03C025/68
CPC分类号： H01L21/31122
摘要： A method for etching a high K dielectric material comprises etching in a first plasma comprising a halogen containing gas (e.g., chlorine) and a reducing gas (e.g., carbon monoxide) and removing post-etch residue in a second plasma comprising a residue cleaning gas (e.g., oxygen or a mixture of oxygen and nitrogen).
摘要翻译：蚀刻高K电介质材料的方法包括在包含含卤素气体（例如氯）和还原气体（例如一氧化碳）的第一等离子体中蚀刻，并且在包含残留物清洁气体的第二等离子体中除去蚀刻后残留物（例如，氧气或氧气和氮气的混合物）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式