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    • 5. 发明申请
    • Method for manufacturing a probe card
    • 探针卡制造方法
    • US20040155009A1
    • 2004-08-12
    • US10771876
    • 2004-02-04
    • Koichi WadaYasuhiro Maeda
    • H01B013/00
    • G01R3/00G01R1/06711G01R1/07342Y10T29/49002Y10T29/49128Y10T29/4913Y10T29/49147Y10T29/49155Y10T29/49169Y10T29/49204
    • A method for manufacturing a probe card, which includes a contact provided on a base substrate and electrically coupled to a terminal of an electronic device, for receiving and/or sending a signal from and/or to the electronic device, includes a first contact formation step of forming a first contact of the contacts on a first surface of a first sacrificial substrate, a second contact formation step of forming a second contact of the contacts of a first surface of a second sacrificial substrate, a signal transmission line formation step of forming a signal transmission line in the base substrate, a first contact joining step of attaching the first surface of the first sacrificial substrate to the base substrate and joining the first contact to the signal transmission line and a second contact joining step of attaching the first surface of the second sacrificial substrate to the base substrate and joining the second contact to the signal transmission line.
    • 一种用于制造探针卡的方法,其包括设置在基底基板上并电耦合到电子设备的端子的用于接收和/或发送来自电子设备和/或向电子设备发送信号的接触的方法包括:第一接触形式 在第一牺牲衬底的第一表面上形成触点的第一接触的步骤,形成第二牺牲衬底的第一表面的触点的第二接触的第二接触形成步骤,形成第二牺牲衬底的信号传输线形成步骤 在所述基底基板中的信号传输线,第一接触接合步骤,将所述第一牺牲基板的第一表面附接到所述基底基板并将所述第一接触接合到所述信号传输线;以及第二接触接合步骤, 所述第二牺牲基板到所述基底基板并将所述第二接触件接合到所述信号传输线。
    • 7. 发明申请
    • EXTRUSION-FREE WET CLEANING PROCESS FOR COPPER-DUAL DAMASCENE STRUCTURES
    • 双重DASASCENE结构的无冲洗干净清洗工艺
    • US20040124172A1
    • 2004-07-01
    • US10707986
    • 2004-01-29
    • Chih-Ning Wu
    • H01B013/00
    • H01L21/02063C23G1/00H01L21/32134H01L21/76807H01L21/76814H01L21/76838
    • An extrusion-free wet cleaning process for post-etch Cu-dual damascene structures is developed. The process includes the following steps: (1).providing a wafer having a silicon substrate and at least one post-etch Cu-dual damascene structure, the post-etch Cu-dual damascene structure having a via structure exposing a portion of a Cu wiring line electrically connected with an Nnull diffusion region of the silicon substrate, and a trench structure formed on the via structure;(2).applying a diluted H2O2 solution on the wafer to slightly oxidize the surface of the exposed Cu wiring line;(3).washing away cupric oxide generated in the oxidation step by means of an acidic cupric oxide cleaning solution containing diluted HF, NH4F or NH2OH; and (4).providing means for preventing Cu reduction reactions on the Cu wiring line.
    • 开发了一种用于后蚀刻铜双镶嵌结构的无挤出湿法清洗工艺。 该方法包括以下步骤:(1)提供具有硅衬底和至少一个后蚀刻Cu-双镶嵌结构的晶片,所述后蚀刻Cu-双镶嵌结构具有暴露一部分Cu的通孔结构 与硅衬底的N +扩散区电连接的布线,以及形成在该通孔结构上的沟槽结构;(2)将稀释的H 2 O 2溶液施加在晶片上以稍微氧化暴露的Cu布线的表面 ;(3)通过含有稀释的HF,NH4F或NH2OH的酸性氧化铜清洗溶液洗涤在氧化步骤中产生的氧化铜; 和(4)用于防止Cu布线上的Cu还原反应的提供装置。