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71. 发明授权

US10003010B2 Magnetic element, skyrmion memory, skyrmion memory device, skyrmion-memory embedded solid-state electronic device, data storage apparatus, data processing and communication apparatus 有权
公开(公告)号：US10003010B2
公开(公告)日：2018-06-19
申请号：US15448612
申请日：2017-03-03
申请人： RIKEN
发明人： Naoto Nagaosa , Wataru Koshibae , Junichi Iwasaki , Masashi Kawasaki , Yoshinori Tokura , Yoshio Kaneko
IPC分类号： G11C11/14 , H01L43/02 , H01F7/20 , H01F10/32 , H01L43/08 , H01L27/22 , G11C11/16 , G11C19/08
CPC分类号： H01L43/02 , G11C11/14 , G11C11/161 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C19/08 , G11C19/0808 , G11C19/085 , G11C19/0866 , H01F7/20 , H01F10/3254 , H01L27/105 , H01L27/222 , H01L27/228 , H01L29/82 , H01L43/06 , H01L43/08
摘要： Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·λ>Wm≥λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ>Hm≥λ, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.

72. 发明授权

US09779836B2 Method for controlling magnetic multi-domain state 有权
公开(公告)号：US09779836B2
公开(公告)日：2017-10-03
申请号：US15125326
申请日：2014-03-12
申请人： Institute of Microelectronics, Chinese Academy of Sciences
发明人： Chong Bi , Shibing Long , Ming Liu
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858 , G11C11/1675 , G11C11/18 , G11C11/5607 , G11C19/0808 , G11C19/0816 , G11C19/0825 , G11C19/0841 , G11C19/085
摘要： The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an additional external magnetic field having a magnetic field strength of 0 to 4×105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and keeps stable when the current is removed. Such a method may be used for magnetic memory or spin-logic device to implement a nonvolatile multi-valued storage, multi-bits logic operation, or neuromorphic computing.

73. 发明授权

US09721415B2 Magnetic head for banknote detection 有权
公开(公告)号：US09721415B2
公开(公告)日：2017-08-01
申请号：US14439981
申请日：2013-10-30
申请人： MultiDimension Technology Co., Ltd.
发明人： James Geza Deak , Mingfeng Liu , Jianming Bai , Min Zhu
IPC分类号： G01R33/02 , G07D7/04 , G01R33/028 , G01N27/90 , G01R33/38 , G01R15/20 , G01R33/09 , G11C19/08
CPC分类号： G07D7/04 , G01N27/90 , G01R15/20 , G01R33/0283 , G01R33/09 , G01R33/091 , G01R33/38 , G11C19/085
摘要： A magnetic currency verification head may include a magnetoresistive sensor chip, and a magnetic bias unit disposed on the side of the magnetoresistive sensor chip away from the detection surface of the magnetic currency verification head, and separated from the magnetoresistive sensor chip; the magnetoresistive sensor chip comprises a gradiometric bridge circuit that includes magnetic sensor elements; the sensitive direction of the magnetic sensor elements is parallel to the detection surface of the magnetic currency verification head; and the magnetic bias unit has a recessed magnetic structure configured such that the magnetic field generated by the magnetic bias unit only has a small magnetic field component in the direction parallel to the detection surface, thereby enabling the magnetic sensor elements to operate in their linear range. As a result, the magnetic currency verification head has high sensitivity and signal-to-noise ratio.

74. 发明申请

US20170169898A1 MAGNETIC DEVICE, SKYRMION MEMORY, SKYRMION MEMORY-DEVICE, SOLID-STATE ELECTRONIC SKYRMION-DEVICE, DATA-STORAGE DEVICE, DATA PROCESSING AND TRANSFERRING DEVICE 有权
公开(公告)号：US20170169898A1
公开(公告)日：2017-06-15
申请号：US15391860
申请日：2016-12-28
申请人： RIKEN
发明人： Naoto NAGAOSA , Wataru KOSHIBAE , Junichi IWASAKI , Masashi KAWASAKI , Yoshinori TOKURA , Yoshio KANEKO
IPC分类号： G11C19/08
CPC分类号： G11C19/085 , G11B5/65 , G11C11/16 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C19/0841 , G11C19/0858 , G11C19/0866 , H01F10/08 , H01L27/105 , H01L43/08
摘要： Provided is a skyrmion memory circuit capable of circularly transferring a magnetic element skyrmion, comprising one or more current paths in a magnet having a closed-path pattern that are provided surrounding an end region including an end portion of the magnet in a plane of the magnet with the closed-path pattern, and applying current between an outer terminal connected to an outer circumferential portion of the closed-path pattern and an inner circumference electrode connected to an inner circumferential portion of the closed-path pattern, transferring the skyrmion in a direction substantially perpendicular to the direction of the applied current, and circulating the skyrmion in the magnet with the closed-path pattern.

75. 发明申请

US20170162274A1 METHOD FOR CONTROLLING MAGNETIC DOMAIN WALL OF MAGNETIC STRUCTURE AND MAGNETIC MEMORY DEVICE USING SAME 有权
公开(公告)号：US20170162274A1
公开(公告)日：2017-06-08
申请号：US15325827
申请日：2015-01-16
申请人： KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
发明人： Kyoungwoong MOON , Chanyong HWANG
IPC分类号： G11C19/08
CPC分类号： G11C19/0808 , G11B5/02 , G11C11/161 , G11C11/1675 , G11C19/0816 , G11C19/085 , H01L27/105
摘要： The present invention provides a method for controlling a magnetic domain wall of a magnetic structure and a magnetic memory device using same. The method includes: a first step of applying a first magnetic field in a first direction to a magnetic structure having a plurality of magnetic domains and a magnetic domain wall between the magnetic domains, and applying a second magnetic field in a second direction to the magnetic structure, the first direction being parallel to the magnetization direction of the magnetic domain wall and the second direction being parallel to the magnetization direction of the magnetic domain wall; and a second step of applying a third magnetic field in a direction opposite to the first direction to the magnetic structure and applying a fourth magnetic field in a direction opposite to the second direction to the magnetic structure, wherein the magnetic domain wall can be moved uniformly in a direction parallel to the magnetization direction of the magnetic domain wall or the magnetization direction of the magnetic domains.

76. 发明申请

US20170092374A1 METHOD FOR CONTROLLING MAGNETIC MULTI-DOMAIN STATE 有权
公开(公告)号：US20170092374A1
公开(公告)日：2017-03-30
申请号：US15125326
申请日：2014-03-12
申请人： Institute of Microelectronics, Chinese Academy of Sciences
发明人： Chong Bi , Shibing Long , Ming Liu
IPC分类号： G11C19/08
CPC分类号： G11C19/0858 , G11C11/1675 , G11C11/18 , G11C11/5607 , G11C19/0808 , G11C19/0816 , G11C19/0825 , G11C19/0841 , G11C19/085
摘要： The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an external magnetic field having a magnetic field strength of 0 to 4×105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and may be kept to be stable when the current is removed. Such a method may be used for current magnetic memory and to operate the magnetization stage of the spin-logic device in the future to implement a nonvolatile multi-valued storage and multi-bits logic operation.

77. 发明授权

US09548132B2 Shift register memory device, shift register, and data storage method 有权
标题翻译：移位寄存器，移位寄存器和数据存储方式
公开(公告)号：US09548132B2
公开(公告)日：2017-01-17
申请号：US14742181
申请日：2015-06-17
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： G11C19/08 , G11C13/00 , G11C11/14 , G11C19/02 , G11C19/00
CPC分类号： G11C19/085 , G11C11/14 , G11C11/161 , G11C11/1675 , G11C13/0016 , G11C19/005 , G11C19/02 , G11C19/0808 , G11C19/0875 , G11C2213/71
摘要： According to one embodiment, a shift register memory device includes a shift register, a program/read element, and a rotating force application unit. The shift register includes a plurality of rotors arranged along one direction and provided with a uniaxial anisotropy. Each of the plurality of rotors has a characteristic direction rotatable around a rotational axis extending in the one direction. The program/read element is configured to program data to the shift register by causing the characteristic direction of one of the rotors to match one selected from two directions conforming to the uniaxial anisotropy and configured to read the data by detecting the characteristic direction. The rotating force application unit is configured to apply a rotating force to the shift register to urge the characteristic direction to rotate. The plurality of rotors are organized into a plurality of pairs of every two mutually adjacent rotors. A first force acts to urge the characteristic directions to be opposingly parallel for two of the rotors belonging to the same pair. A second force acts to urge the characteristic directions to be opposingly parallel for two mutually adjacent rotors belonging to mutually adjacent pairs.
摘要翻译：根据一个实施例，移位寄存器存储器件包括移位寄存器，程序/读取元件和旋转力施加单元。移位寄存器包括沿着一个方向布置并具有单轴各向异性的多个转子。所述多个转子中的每一个具有围绕沿所述一个方向延伸的旋转轴线可旋转的特征方向。程序/读取元件被配置为通过使转子中的一个的特征方向与从单轴各向异性相一致的两个方向中选出的一个来匹配从而将数据编程到移位寄存器，并通过检测特征方向来读取数据。旋转力施加单元构造成向移位寄存器施加旋转力以促使特征方向旋转。多个转子被组织成每对两个彼此相邻的转子的多对。第一力作用以促使属于同一对的两个转子的特征方向相对平行。第二力作用以促使特征方向相对地平行于属于彼此相邻的对的两个相互相邻的转子。

78. 发明申请

US20150310928A1 SHIFT REGISTER MEMORY DEVICE, SHIFT REGISTER, AND DATA STORAGE METHOD 有权
标题翻译：移位寄存器存储器，移位寄存器和数据存储方法
公开(公告)号：US20150310928A1
公开(公告)日：2015-10-29
申请号：US14742181
申请日：2015-06-17
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoshiaki FUKUZUMI , Hideaki AOCHI
IPC分类号： G11C19/08 , G11C19/00
CPC分类号： G11C19/085 , G11C11/14 , G11C11/161 , G11C11/1675 , G11C13/0016 , G11C19/005 , G11C19/02 , G11C19/0808 , G11C19/0875 , G11C2213/71
摘要： According to one embodiment, a shift register memory device includes a shift register, a program/read element, and a rotating force application unit. The shift register includes a plurality of rotors arranged along one direction and provided with a uniaxial anisotropy. Each of the plurality of rotors has a characteristic direction rotatable around a rotational axis extending in the one direction. The program/read element is configured to program data to the shift register by causing the characteristic direction of one of the rotors to match one selected from two directions conforming to the uniaxial anisotropy and configured to read the data by detecting the characteristic direction. The rotating force application unit is configured to apply a rotating force to the shift register to urge the characteristic direction to rotate. The plurality of rotors are organized into a plurality of pairs of every two mutually adjacent rotors. A first force acts to urge the characteristic directions to be opposingly parallel for two of the rotors belonging to the same pair. A second force acts to urge the characteristic directions to be opposingly parallel for two mutually adjacent rotors belonging to mutually adjacent pairs.
摘要翻译：根据一个实施例，移位寄存器存储器件包括移位寄存器，程序/读取元件和旋转力施加单元。移位寄存器包括沿着一个方向布置并具有单轴各向异性的多个转子。所述多个转子中的每一个具有围绕沿所述一个方向延伸的旋转轴线可旋转的特征方向。程序/读取元件被配置为通过使转子中的一个的特征方向与从单轴各向异性相一致的两个方向中选出的一个来匹配从而将数据编程到移位寄存器，并通过检测特征方向来读取数据。旋转力施加单元构造成向移位寄存器施加旋转力以促使特征方向旋转。多个转子被组织成每对两个彼此相邻的转子的多对。第一力作用以促使属于同一对的两个转子的特征方向相对平行。第二力作用以促使特征方向相对地平行于属于彼此相邻的对的两个相互相邻的转子。

79. 发明授权

US08437167B2 Shift register memory device, shift register, and data storage method 有权
标题翻译：移位寄存器，移位寄存器和数据存储方式
公开(公告)号：US08437167B2
公开(公告)日：2013-05-07
申请号：US13051245
申请日：2011-03-18
申请人： Yoshiaki Fukuzumi , Hideaki Aochi
发明人： Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： G11C19/00
CPC分类号： G11C19/085 , G11C11/14 , G11C11/161 , G11C11/1675 , G11C13/0016 , G11C19/005 , G11C19/02 , G11C19/0808 , G11C19/0875 , G11C2213/71
摘要： According to one embodiment, a shift register memory device includes a shift register, a program/read element, and a rotating force application unit. The shift register includes a plurality of rotors arranged along one direction and provided with a uniaxial anisotropy. Each of the plurality of rotors has a characteristic direction rotatable around a rotational axis extending in the one direction. The program/read element is configured to program data to the shift register by causing the characteristic direction of one of the rotors to match one selected from two directions conforming to the uniaxial anisotropy and configured to read the data by detecting the characteristic direction. The rotating force application unit is configured to apply a rotating force to the shift register to urge the characteristic direction to rotate. The plurality of rotors are organized into a plurality of pairs of every two mutually adjacent rotors. A first force acts to urge the characteristic directions to be opposingly parallel for two of the rotors belonging to the same pair. A second force acts to urge the characteristic directions to be opposingly parallel for two mutually adjacent rotors belonging to mutually adjacent pairs.
摘要翻译：根据一个实施例，移位寄存器存储器件包括移位寄存器，程序/读取元件和旋转力施加单元。移位寄存器包括沿着一个方向布置并具有单轴各向异性的多个转子。所述多个转子中的每一个具有围绕沿所述一个方向延伸的旋转轴线可旋转的特征方向。程序/读取元件被配置为通过使转子中的一个的特征方向与从单轴各向异性相一致的两个方向中选出的一个来匹配从而将数据编程到移位寄存器，并通过检测特征方向来读取数据。旋转力施加单元构造成向移位寄存器施加旋转力以促使特征方向旋转。多个转子被组织成每对两个彼此相邻的转子的多对。第一力作用以促使属于同一对的两个转子的特征方向相对平行。第二力作用以促使特征方向相对地平行于属于彼此相邻的对的两个相互相邻的转子。

80. 发明授权

US5093646A High frequency matrix transformer 失效
标题翻译：高频矩阵变压器
公开(公告)号：US5093646A
公开(公告)日：1992-03-03
申请号：US322521
申请日：1989-03-13
申请人： Edward Herbert
发明人： Edward Herbert
IPC分类号： H02M3/28 , G11C19/08 , H01F19/04 , H01F30/00
CPC分类号： G11C19/085 , H01F19/04 , H01F2027/348 , H01F2038/006
摘要： A high frequency matrix transformer comprises a plurality of interdependent magnetic elements interwired as a transformer. The various component parts of the high frequency transformer are arranged and interwired to provide a transformer having very low leakage inductance and very good coupling from the primary to the secondary. The high frequency matrix transformer is particularly well adapted for transformers requiring high equivalent turns ratios, high frequency, high power, and high dielectric isolation. It can have a plurality of parallel secondaries, which can source current to parallel rectifier circuits with current sharing. It can also have a plurality of parallel primary circuits, which also will current share, to balance the load between source switching circuits, or to provide dual input voltage capability (i.e., 120/240 volts). The high frequency matrix transformer tends to be spread out, and can be very flat, making it easy to ventilate or heat sink. The high frequency matrix transformer having push pull windings can include the primary switching device and secondary rectifying device within its windings, so that the transformer as a whole has direct current inputs and outputs.
摘要翻译：高频矩阵变压器包括作为变压器互连的多个相互依赖的磁性元件。高频变压器的各个组成部分被布置和相互连接，以提供具有非常低的漏电感和从初级到次级的非常好的耦合的变压器。高频矩阵变压器特别适用于需要高等效匝数比，高频，高功率和高电介质隔离的变压器。它可以具有多个并联二次管，其可以通过电流共享将电流馈送到并联整流器电路。它还可以具有多个并联的初级电路，其也将电流共享以平衡源极开关电路之间的负载，或者提供双输入电压能力（即，120/240伏特）。高频矩阵变压器倾向于扩展，可以非常平坦，易于通风或散热。具有推挽绕组的高频矩阵变压器可以包括其绕组内的初级开关装置和次级整流装置，使得变压器作为整体具有直流输入和输出。

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