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1. 发明授权

US09153340B2 Magnetic storage element, magnetic storage device, magnetic memory, and driving method 有权
标题翻译：磁存储元件，磁存储器，磁存储器和驱动方法
公开(公告)号：US09153340B2
公开(公告)日：2015-10-06
申请号：US14081149
申请日：2013-11-15
申请人： Kabushiki Kaisha Toshiba
发明人： Hirofumi Morise , Yoshiaki Fukuzumi , Tsuyoshi Kondo , Shiho Nakamura , Hideaki Aochi
IPC分类号： G11C11/00 , G11C19/02 , G11C19/08 , H01L27/22 , H01L43/08
CPC分类号： G11C19/02 , G11C19/08 , H01L27/22 , H01L43/08
摘要： A magnetic storage element includes a magnetic nanowire. A cross-section of the magnetic nanowire has first and second visible outlines, the first visible outline has a first minimal point at which a distance from a virtual straight line becomes minimal, a second minimal point at which the distance from the virtual straight line becomes minimal, and a first maximal point at which the distance from the virtual straight line becomes longest between the first minimal point and the second minimal point, and an angle between a first straight line connecting the first minimal point and the second minimal point, and one of a second straight line connecting the first minimal point and the first maximal point and a third straight line connecting the second minimal point and the first maximal point is not smaller than four degrees and not larger than 30 degrees.
摘要翻译：磁存储元件包括磁性纳米线。磁纳米线的横截面具有第一和第二可视轮廓，第一可见轮廓具有从虚拟直线的距离变得最小的第一最小点，距离虚拟直线的距离变成第二最小点最小和第一最大点，在该第一最大点处，从虚拟直线到第一最小点和第二最小点之间的距离变得最长，以及连接第一最小点和第二最小点的第一直线之间的角度，以及一个连接第一最小点和第一最大点的第二直线和连接第二最小点和第一最大点的第三直线不小于四度且不大于30度。

2. 发明授权

US09123421B2 Racetrack memory cells with a vertical nanowire storage element 有权
标题翻译：具有垂直纳米线存储元件的赛道记忆单元
公开(公告)号：US09123421B2
公开(公告)日：2015-09-01
申请号：US13745963
申请日：2013-01-21
申请人： International Business Machines Corporation
发明人： Anthony J. Annunziata
IPC分类号： G11C19/00 , G11C19/08 , H01L43/12 , G11C19/02 , H01L49/02 , H01L43/08 , G11C11/15
CPC分类号： G11C19/0808 , G11C11/15 , G11C19/02 , G11C19/0841 , H01L28/20 , H01L43/08 , H01L43/12 , Y10S977/762 , Y10S977/84 , Y10S977/943
摘要： A racetrack memory cell device include a dielectric, an electrode disposed in the dielectric, a metal strap disposed in the dielectric, a nanowire disposed in the dielectric between the electrode and the metal strap and a magnetic tunnel junction disposed in the dielectric on the metal strap, and axially with the nanowire.
摘要翻译：赛道记忆单元装置包括电介质，设置在电介质中的电极，设置在电介质中的金属带，设置在电极和金属带之间的电介质中的纳米线和设置在金属带上的电介质中的磁性隧道结，并与纳米线轴向。

3. 发明授权

US08743584B2 Shift register memory and driving method thereof 有权
标题翻译：移位寄存器及其驱动方法
公开(公告)号：US08743584B2
公开(公告)日：2014-06-03
申请号：US13599228
申请日：2012-08-30
申请人： Yoshiaki Fukuzumi , Hideaki Aochi
发明人： Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： G11C19/00 , G11C19/08 , G11C11/00 , G11C11/14 , G11C11/15 , H01L29/82 , G11C11/16
CPC分类号： H01L27/228 , G11C11/14 , G11C11/15 , G11C11/155 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C19/02 , G11C19/0808 , G11C19/0833 , H01L27/22 , H01L43/02
摘要： A shift register memory according to the present embodiment includes a magnetic pillar including a plurality of magnetic layers and a plurality of nonmagnetic layers provided between the magnetic layers adjacent to each other. A stress application part applies a stress to the magnetic pillar. A magnetic-field application part applies a static magnetic field to the magnetic pillar. The stress application part applies the stress to the magnetic pillar in order to transfer magnetization states of the magnetic layers in a stacking direction of the magnetic layers.
摘要翻译：根据本实施例的移位寄存器存储器包括具有多个磁性层的磁柱和设置在彼此相邻的磁性层之间的多个非磁性层。应力施加部分对磁柱施加应力。磁场施加部分将静磁场施加到磁柱。应力施加部分将应力施加到磁柱，以便在磁性层的堆叠方向上传递磁性层的磁化状态。

4. 发明申请

US20130242634A1 SHIFT REGISTER MEMORY AND DRIVING METHOD THEREOF 有权
标题翻译：移位寄存器及其驱动方法
公开(公告)号：US20130242634A1
公开(公告)日：2013-09-19
申请号：US13599228
申请日：2012-08-30
申请人： Yoshiaki FUKUZUMI , Hideaki Aochi
发明人： Yoshiaki FUKUZUMI , Hideaki Aochi
IPC分类号： G11C19/02
CPC分类号： H01L27/228 , G11C11/14 , G11C11/15 , G11C11/155 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C19/02 , G11C19/0808 , G11C19/0833 , H01L27/22 , H01L43/02
摘要： A shift register memory according to the present embodiment includes a magnetic pillar including a plurality of magnetic layers and a plurality of nonmagnetic layers provided between the magnetic layers adjacent to each other. A stress application part applies a stress to the magnetic pillar. A magnetic-field application part applies a static magnetic field to the magnetic pillar. The stress application part applies the stress to the magnetic pillar in order to transfer magnetization states of the magnetic layers in a stacking direction of the magnetic layers.
摘要翻译：根据本实施例的移位寄存器存储器包括具有多个磁性层的磁柱和设置在彼此相邻的磁性层之间的多个非磁性层。应力施加部分对磁柱施加应力。磁场施加部分将静磁场施加到磁柱。应力施加部分将应力施加到磁柱，以便在磁性层的堆叠方向上传递磁性层的磁化状态。

5. 发明申请

US20110267868A1 SHIFT REGISTER MEMORY DEVICE, SHIFT REGISTER, AND DATA STORAGE METHOD 有权
标题翻译：移位寄存器存储器，移位寄存器和数据存储方法
公开(公告)号：US20110267868A1
公开(公告)日：2011-11-03
申请号：US13051245
申请日：2011-03-18
申请人： Yoshiaki Fukuzumi , Hideaki Aochi
发明人： Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： G11C19/00 , G11C7/00 , G11C19/02
CPC分类号： G11C19/085 , G11C11/14 , G11C11/161 , G11C11/1675 , G11C13/0016 , G11C19/005 , G11C19/02 , G11C19/0808 , G11C19/0875 , G11C2213/71
摘要： According to one embodiment, a shift register memory device includes a shift register, a program/read element, and a rotating force application unit. The shift register includes a plurality of rotors arranged along one direction and provided with a uniaxial anisotropy. Each of the plurality of rotors has a characteristic direction rotatable around a rotational axis extending in the one direction. The program/read element is configured to program data to the shift register by causing the characteristic direction of one of the rotors to match one selected from two directions conforming to the uniaxial anisotropy and configured to read the data by detecting the characteristic direction. The rotating force application unit is configured to apply a rotating force to the shift register to urge the characteristic direction to rotate. The plurality of rotors are organized into a plurality of pairs of every two mutually adjacent rotors. A first force acts to urge the characteristic directions to be opposingly parallel for two of the rotors belonging to the same pair. A second force acts to urge the characteristic directions to be opposingly parallel for two mutually adjacent rotors belonging to mutually adjacent pairs.
摘要翻译：根据一个实施例，移位寄存器存储器件包括移位寄存器，程序/读取元件和旋转力施加单元。移位寄存器包括沿着一个方向布置并具有单轴各向异性的多个转子。所述多个转子中的每一个具有围绕沿所述一个方向延伸的旋转轴线可旋转的特征方向。程序/读取元件被配置为通过使转子中的一个的特征方向与从单轴各向异性相一致的两个方向中选出的一个来匹配从而将数据编程到移位寄存器，并通过检测特征方向来读取数据。旋转力施加单元构造成向移位寄存器施加旋转力以促使特征方向旋转。多个转子被组织成每对两个彼此相邻的转子的多对。第一力作用以促使属于同一对的两个转子的特征方向相对平行。第二力作用以促使特征方向相对地平行于属于彼此相邻的对的两个相互相邻的转子。

6. 发明申请

US20100302832A1 NON-VOLATILE LOGIC DEVICES USING MAGNETIC TUNNEL JUNCTIONS 有权
标题翻译：使用磁性隧道结的非易失性逻辑器件
公开(公告)号：US20100302832A1
公开(公告)日：2010-12-02
申请号：US12784848
申请日：2010-05-21
申请人： Neal Berger , Mourad El Baraji
发明人： Neal Berger , Mourad El Baraji
IPC分类号： G11C19/00
CPC分类号： G11C19/08 , G11C8/04 , G11C11/1675 , G11C14/0081 , G11C19/02
摘要： The present disclosures concerns a register cell comprising a differential amplifying portion containing a first inverter coupled to a second inverter such as to form an unbalanced flip-flop circuit; a first and second bit line connected to one end of the first and second inverter, respectively; and a first and second source line connected to the other end of the first and second inverter, respectively; characterized by the register cell further comprising a first and second magnetic tunnel junction electrically connected to the other end of the first and second inverter, respectively. The shift register disclosed herein can be made smaller than conventional shift registers and power consumption during the write and read operation of the shift registers can be low. The shift register disclosed herein can be made smaller than conventional shift registers and power consumption during the write and read operation of the shift registers can be low.
摘要翻译：本发明涉及一种寄存器单元，包括：差分放大部分，其包含耦合到第二反相器的第一反相器，以形成不平衡触发器电路; 分别连接到第一和第二反相器的一端的第一和第二位线; 以及分别连接到所述第一和第二逆变器的另一端的第一和第二源极线; 其特征在于寄存器单元还包括分别电连接到第一和第二反相器的另一端的第一和第二磁性隧道结。这里公开的移位寄存器可以比常规移位寄存器小，并且在移位寄存器的写入和读取操作期间的功率消耗可以是低的。这里公开的移位寄存器可以比常规移位寄存器小，并且在移位寄存器的写入和读取操作期间的功率消耗可以是低的。

7. 发明授权

US07031178B2 Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same 有权
标题翻译：具有两个区域之间的可移动磁畴的磁移位寄存器及其使用方法
公开(公告)号：US07031178B2
公开(公告)日：2006-04-18
申请号：US10984055
申请日：2004-11-09
申请人： Stuart S. P. Parkin
发明人： Stuart S. P. Parkin
IPC分类号： G11C19/02
CPC分类号： G11C19/0808 , G11C11/1673 , G11C11/1675 , G11C19/02 , G11C19/0841 , H01F10/14 , H01F41/26
摘要： A magnetic shift register uses the inherent, natural properties of domain walls in magnetic materials to store data. The shift register uses spin electronics without changing the physical nature of its constituent materials. The shift register comprises a fine track or strip of magnetic materials. Information is stored as domain walls in the track. An electric current is applied to the track to move the magnetic moments along the track past a reading or writing device. In a magnetic material with domain walls, a current passed across the domain wall moves the domain wall in the direction of the current flow. As the current passes through a domain, it becomes “spin polarized”. When this spin polarized current passes through the next domain and across a domain wall, it develops a circle of spin torque. This spin torque moves the domain wall.
摘要翻译：磁性移位寄存器使用磁性材料中的畴壁的固有的自然特性来存储数据。移位寄存器使用自旋电子器件，而不改变其构成材料的物理性质。移位寄存器包括磁性材料的精细轨道或条带。信息作为域墙存储在轨道中。将电流施加到轨道上以沿着轨迹移动通过读取或写入装置的磁矩。在具有畴壁的磁性材料中，穿过畴壁的电流使畴壁沿电流方向移动。当电流通过一个域时，它变成“自旋极化”。当这种自旋极化电流通过下一个畴并横跨畴壁时，它产生一个自旋转矩圈。该旋转扭矩移动域壁。

8. 发明申请

US20040252539A1 SHIFTABLE MAGNETIC SHIFT REGISTER AND METHOD OF USING THE SAME 有权
标题翻译：可移动磁性移位寄存器及其使用方法
公开(公告)号：US20040252539A1
公开(公告)日：2004-12-16
申请号：US10458554
申请日：2003-06-10
申请人： International Business Machines Corporation
发明人： Stuart S.P. Parkin
IPC分类号： G11C019/00
CPC分类号： G11C19/0808 , G11C11/1673 , G11C11/1675 , G11C19/02 , G11C19/0841 , H01F10/14 , H01F41/26
摘要： A magnetic shift register uses the inherent, natural properties of domain walls in magnetic materials to store data. The shift register uses spin electronics without changing the physical nature of its constituent materials. The shift register comprises a fine track or strip of magnetic materials. Information is stored as domain walls in the track. An electric current is applied to the track to move the magnetic moments along the track past a reading or writing device. In a magnetic material with domain walls, a current passed across the domain wall moves the domain wall in the direction of the current flow. As the current passes through a domain, it becomes nullspin polarizednull. When this spin polarized current passes through the next domain and across a domain wall, it develops a circle of spin torque. This spin torque moves the domain wall.
摘要翻译：磁性移位寄存器使用磁性材料中的畴壁的固有的自然特性来存储数据。移位寄存器使用自旋电子器件，而不改变其构成材料的物理性质。移位寄存器包括磁性材料的精细轨道或条带。信息作为域墙存储在轨道中。将电流施加到轨道上以沿着轨迹移动通过读取或写入装置的磁矩。在具有畴壁的磁性材料中，穿过畴壁的电流使畴壁沿电流方向移动。当电流通过一个域时，它变成“自旋极化”。当这种自旋极化电流通过下一个畴并横跨畴壁时，它产生一个自旋转矩圈。该旋转扭矩移动域壁。

9. 发明申请

US20040251232A1 Method of fabricating a shiftable magnetic shift register 有权
标题翻译：制造可移动磁移位寄存器的方法
公开(公告)号：US20040251232A1
公开(公告)日：2004-12-16
申请号：US10787738
申请日：2004-02-25
申请人： International Business Machines Corporation
发明人： Tze-chiang Chen , Stuart S. P. Parkin
IPC分类号： H01F017/00
CPC分类号： G11C11/14 , G11C19/02 , G11C19/0808 , G11C19/0841 , H01F10/14 , H01F10/265 , H01F41/26 , Y10T29/49021 , Y10T29/49043 , Y10T29/49052
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nmnull100 nm are etched in this multilayered stack of alternating layers. Vias may be etched form smooth or notched walls. Vias are filled by electroplating layers of alternating types of ferromagnetic or ferrimagnetic metals. The alternating ferromagnetic or ferrimagnetic layers are comprised of magnetic materials with different magnetization or magnetic exchange or magnetic anisotropies. These different magnetic characteristics allow the pinning of magnetic domain walls at the boundaries between these layers. Alternatively, vias are filled with a homogeneous ferromagnetic material. Magnetic domain walls are formed by the discontinuity in the ferromagnetic or ferromagnetic material that occurs at the notches or at the protuberances along the via walls.
摘要翻译：用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。在该多层交替层中蚀刻约10微米高的具有100nm×100nm量级的横截面的通孔。通孔可能被蚀刻形成平滑或缺口的墙壁。通孔由交替类型的铁磁或亚铁磁性金属的电镀层填充。交替的铁磁或亚铁磁层由具有不同磁化或磁交换或磁各向异性的磁性材料组成。这些不同的磁特性允许磁畴壁在这些层之间的边界处的钉扎。或者，通孔用均匀的铁磁材料填充。磁畴壁由铁氧体或铁磁材料中的不连续部分形成，这些不规则发生在沿着通孔壁的凹口或凸起处。

10. 发明申请

US20190058110A1 Magnetic Diode in Artificial Magnetic Honeycomb Lattice 审中-公开
公开(公告)号：US20190058110A1
公开(公告)日：2019-02-21
申请号：US15978042
申请日：2018-05-11
申请人： The Curators of the University of Missouri
发明人： Deepak Kumar Singh , Brock Summers , Ashutosh Dahal
IPC分类号： H01L43/02 , H01F41/20 , H01F10/14 , H01F10/26 , H01L43/12 , H01L43/10 , H01F41/34
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/5607 , G11C19/02 , H01F1/009 , H01F10/142 , H01F10/26 , H01F41/20 , H01F41/34 , H01L27/224 , H01L43/10 , H01L43/12
摘要： A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm2 to about 900 mm2.

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