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1. 发明授权

US09905310B2 Method for controlling magnetic domain wall of magnetic structure and magnetic memory device using same 有权
公开(公告)号：US09905310B2
公开(公告)日：2018-02-27
申请号：US15325827
申请日：2015-01-16
申请人： KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
发明人： Kyoungwoong Moon , Chanyong Hwang
IPC分类号： G11C19/08 , G11C11/14
CPC分类号： G11C19/0808 , G11B5/02 , G11C11/161 , G11C11/1675 , G11C19/0816 , G11C19/085 , H01L27/105
摘要： The present invention provides a method for controlling a magnetic domain wall of a magnetic structure and a magnetic memory device using same. The method includes: a first step of applying a first magnetic field in a first direction to a magnetic structure having a plurality of magnetic domains and a magnetic domain wall between the magnetic domains, and applying a second magnetic field in a second direction to the magnetic structure, the first direction being parallel to the magnetization direction of the magnetic domain wall and the second direction being parallel to the magnetization direction of the magnetic domain wall; and a second step of applying a third magnetic field in a direction opposite to the first direction to the magnetic structure and applying a fourth magnetic field in a direction opposite to the second direction to the magnetic structure, wherein the magnetic domain wall can be moved uniformly in a direction parallel to the magnetization direction of the magnetic domain wall or the magnetization direction of the magnetic domains.

2. 发明授权

US09824712B2 Magnetic storage media and data storage device 有权
公开(公告)号：US09824712B2
公开(公告)日：2017-11-21
申请号：US15423600
申请日：2017-02-03
申请人： RIKEN
发明人： Naoto Nagaosa , Wataru Koshibae , Junichi Iwasaki , Masashi Kawasaki , Yoshinori Tokura , Yoshio Kaneko
IPC分类号： G11B5/74 , G11B5/02 , G11C19/08 , G11B5/00
CPC分类号： G11B5/74 , G11B5/02 , G11B5/65 , G11B5/738 , G11B2005/0021 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C13/04 , G11C19/0808 , G11C19/085 , G11C19/0858 , H01L43/08
摘要： A magnetic storage media which has an endurance (durability) characteristics close to an infinite number of writing times of data and a data retention (holding) characteristics close to permanency, and is ultra-high-speed writable and erasable, and a data storage device and an image storage device which apply this magnetic storage media are provided. A magnetic storage media includes a thin layer magnet and a magnetic field generating unit arranged facing a surface of the magnet, and is capable of creating or eliminating a skyrmion by applying heat energy to another surface of the magnet positioned on the opposite side of the surface of the magnet, and a skyrmion memory includes the magnetic storage media.

3. 发明申请

US20170178746A1 MAGNETIC ELEMENT, SKYRMION MEMORY, SKYRMION MEMORY-DEVICE, SOLID-STATE ELECTRONIC DEVICE, DATA-STORAGE DEVICE, DATA PROCESSING AND COMMUNICATION DEVICE 有权
公开(公告)号：US20170178746A1
公开(公告)日：2017-06-22
申请号：US15450003
申请日：2017-03-05
申请人： RIKEN
发明人： Naoto NAGAOSA , Wataru KOSHIBAE , Junichi IWASAKI , Masashi KAWASAKI , Yoshinori TOKURA , Yoshio KANEKO
IPC分类号： G11C19/08
CPC分类号： G11C19/085 , G11C11/1675 , G11C11/18 , G11C19/08 , G11C19/0866 , H01L27/228 , H01L28/00 , H01L43/08
摘要： To provide a magnetic element capable of performing skyrmion transfer, a skyrmion memory to which this magnetic element is applied, and a shift register, for example, a magnetic element capable of performing skyrmion transfer is provided, the magnetic element providing a transverse transfer arrangement in which the skyrmion is transferred substantially perpendicular to a current between an upstream electrode and a downstream electrode, and including a plurality of stable positions in which the skyrmion exists more stably than in other regions of a magnet, and a skyrmion sensor that detects a position of the skyrmion.

4. 发明授权

US09293184B2 Method of pinning domain walls in a nanowire magnetic memory device 有权
标题翻译：在纳米线磁存储器件中钉扎畴壁的方法
公开(公告)号：US09293184B2
公开(公告)日：2016-03-22
申请号：US14350434
申请日：2012-10-08
申请人： University of York
发明人： Kevin O'Grady , Gonzalo Vallejo Fernandez , Atsufumi Hirohata
IPC分类号： G11C19/00 , G11C19/02 , G11C7/00 , G11C11/00 , G11C5/02 , G11C19/38 , G11C11/16 , G11C11/14 , H04L12/26 , G11C19/08 , G11C14/00
CPC分类号： G11C11/1675 , G11C11/14 , G11C11/161 , G11C14/0081 , G11C19/02 , G11C19/0808 , G11C19/0833 , G11C19/085 , G11C19/0875 , H01L43/02 , H01L43/10 , H04L43/02 , H04L43/10
摘要： There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600 Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.
摘要翻译：提供了一种在磁存储器装置（10）中钉扎畴壁的方法，包括使用反铁磁材料来产生畴壁钉扎位置。铁磁性纳米线（16）和反铁磁性纳米线（20）交叉排列的结（22）在铁磁材料和反铁磁材料之间呈现永久的交换偏压相互作用，产生畴壁钉扎位置。交换偏压场为30〜3600Oe，铁磁元件的各向异性方向与反铁磁性元件的各向异性方向成15〜75°。

5. 发明授权

US4754429A Cassette type magnetic bubble memory 失效
标题翻译：盒式磁记忆体
公开(公告)号：US4754429A
公开(公告)日：1988-06-28
申请号：US732295
申请日：1985-05-09
申请人： Kouei Kashiro , Toshiaki Sukeda , Satoru Imai , Sakan Takai , Harumi Maegawa
发明人： Kouei Kashiro , Toshiaki Sukeda , Satoru Imai , Sakan Takai , Harumi Maegawa
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/085
摘要： A cassette type magnetic bubble memory comprise a bubble memory device including a bubble memory chip and lead terminals; a connector having contacts for electrically connecting the bubble memory device to an outside unit; thin flexible printed substrates for electrically connecting the contacts of the connector to the lead terminals of the bubble memory device; and a cassette case for accommodating therein the bubble memory device, the connector, and the printed substrates. The cassette case has inner walls. Some parts of the inner walls are in contact with at least some parts of an outer face of the bubble memory device to retain the device in the cassette case so that the majority of the outer face of the device is spaced from the majority of the inner walls of the cassette case. The bubble memory device and the connector are arranged in displaced positions along a plane common to the longitudinal direction of insertion of the cassette case into a bubble memory control unit.
摘要翻译：磁带式磁气泡存储器包括：气泡存储装置，其包括气泡存储芯片和引线端子; 具有用于将气泡存储装置电连接到外部单元的触点的连接器; 薄的柔性印刷基板，用于将连接器的触点电连接到气泡存储装置的引线端子; 以及用于在其中容纳气泡存储装置，连接器和印刷基板的盒壳体。磁带盒具有内壁。内壁的一些部分与气泡存储装置的外表面的至少一些部分接触，以将装置保持在盒壳体中，使得装置的大部分外表面与内部的大部分间隔开磁带盒的墙壁。气泡存储装置和连接器沿着与盒壳体插入气泡存储器控制单元的纵向方向共同的平面布置在位移位置。

6. 发明授权

US4734883A Magnetic bubble memory purge and verification system 失效
标题翻译：磁性气泡记忆清除和验证系统
公开(公告)号：US4734883A
公开(公告)日：1988-03-29
申请号：US732780
申请日：1985-05-10
申请人： Bruce C. Perkin
发明人： Bruce C. Perkin
IPC分类号： G11C19/08
CPC分类号： G11C19/085 , G11C19/0858
摘要： An arrangement for purging a magnetic bubble memory and providing a visible purge verification utilizes the thermal compensation Z-axis coil for providing a purge field. A power supply, purge switch and current sensitive circuit interrupter are connected across the thermal compensation coil. When the switch is closed, a surge of relatively high current many times greater than that required for thermal compensation is applied to the coil. Accordingly, the bubbles in the memory will completely disappear. The circuit interrupter is used to halt the purge current once it exceeds the required purge value. This protects the thermal compensation winding and also provides a visual verification that a purge pulse has occurred.
摘要翻译：用于清洗磁性气泡存储器并提供可见清洗验证的布置利用热补偿Z轴线圈来提供净化场。电源，清扫开关和电流敏感电路断路器连接在热补偿线圈两端。当开关闭合时，向线圈施加比热补偿所需的电流多许多倍的相对高电流的浪涌。因此，存储器中的气泡将完全消失。电路断路器一旦超过所需的清除值，就用于停止清洗电流。这保护了热补偿绕组，并且还提供了发生吹扫脉冲的目视验证。

7. 发明授权

US4592015A Magnetic bubble memory module 失效
标题翻译：磁性气泡存储模块
公开(公告)号：US4592015A
公开(公告)日：1986-05-27
申请号：US627893
申请日：1984-07-05
申请人： Yutaka Akiba , Kazuo Hirota
发明人： Yutaka Akiba , Kazuo Hirota
IPC分类号： G11C11/14 , G11C19/08 , H05K5/02 , G11C5/04
CPC分类号： H05K5/026 , G11C19/085
摘要： A magnetic bubble memory module comprises a shielding conductor case which encloses therein an annular rectangular parallelepiped core having windings and a magnetic bubble memory chip arranged in a space defined by the annular core. The central portion of the shielding conductor case is recessed so that it is brought near the bubble memory chip. The recess may be formed in one or each of the top and bottom surfaces of the shielding conductor case. A magnet plate is disposed in the recess of the shielding conductor case. The whole assembly is covered by a magnetic shielding case.
摘要翻译：磁性气泡存储器模块包括屏蔽导体壳体，其中包围具有绕组的环形长方体芯和布置在由环形芯限定的空间中的磁性气泡存储芯片。屏蔽导体壳体的中心部分是凹进的，使其靠近气泡存储芯片。凹部可以形成在屏蔽导体壳体的顶表面和底表面中的一个或每个中。在屏蔽导体壳体的凹部中设置有磁板。整个组件被磁屏蔽罩覆盖。

8. 发明授权

US4544971A Memory cassette holding apparatus 失效
标题翻译：存储盒式磁带保持装置
公开(公告)号：US4544971A
公开(公告)日：1985-10-01
申请号：US478729
申请日：1983-03-25
申请人： Hidetsugu Komiya , Seiichi Hattori
发明人： Hidetsugu Komiya , Seiichi Hattori
IPC分类号： G11C5/00 , G05B19/18 , G05B19/414 , G11B15/04 , G11B15/675 , G11C5/02 , G11C19/08 , G11B15/00
CPC分类号： G11C19/085 , G11B15/04 , G11B15/675 , G11C5/025
摘要： An apparatus for holding a memory cassette in a cassette adapter wherein the memory cassette cannot be ejected from the adapter, even by pressing an eject button, while data is being written into or read from the memory cassette. Provided are means for generating a signal indicating that a read or write operation is in progress, a locking mechanism for locking a cassette ejecting mechanism to render the latter inoperable, and a drive circuit responsive to the generated signal for actuating the locking mechanism to prevent ejection of the memory cassette until the read or write operation is completed.
摘要翻译：一种用于将存储盒保持在盒式适配器中的装置，其中即使通过按下弹出按钮，存储盒也不能从适配器弹出，同时数据被写入或从存储盒读取。提供了用于产生指示读取或写入操作正在进行的信号的装置，用于锁定盒子弹出机构以使其不能操作的锁定机构，以及响应于所产生的信号的驱动电路，用于致动锁定机构以防止弹出直到读或写操作完成。

9. 发明授权

US4430729A Series resonant drive circuit for magnetic bubble memory 失效
标题翻译：用于磁性气泡存储器的串联谐振驱动电路
公开(公告)号：US4430729A
公开(公告)日：1984-02-07
申请号：US416043
申请日：1982-09-08
申请人： Takashi Toyooka , Hirokazu Aoki , Mamoru Sugie , Shigeru Yoshizawa
发明人： Takashi Toyooka , Hirokazu Aoki , Mamoru Sugie , Shigeru Yoshizawa
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/085
摘要： A series resonant drive circuit for a magnetic bubble memory includes X- and Y-coils arranged orthogonally to each other for generating a rotating magnetic field applied to a magnetic bubble memory chip, resonance capacitors each connected to a corresponding one of the X- and Y-coils for forming a series resonance circuit with the corresponding coil at a frequency of the rotating magnetic field, power supplies each connected to a corresponding one of the resonance circuits, and an inductance device connected in series with both of the resonance circuits and a capacitance device connected between the resonance circuits to compensate a mutual inductance due to the inductive coupling between the X- and Y-coils and a capacitance due to the capacitive coupling between the X- and Y-coils. Further, the temperature coefficient of the capacitance device is selected so that the temperature coefficients of the mutual inductance and capacitance between the coils can be compensated.
摘要翻译：一种用于磁性气泡存储器的串联谐振驱动电路，包括彼此垂直排列的X线圈和Y型线圈，用于产生施加到磁性气泡存储器芯片的旋转磁场，谐振电容器各自连接到X和Y中相应的一个 - 用于在旋转磁场的频率下与对应的线圈形成串联谐振电路的线圈，各自连接到相应的一个谐振电路的电源，以及与两个谐振电路串联连接的电感器件和电容连接在谐振电路之间的器件，以补偿由于X线圈和Y线圈之间的电感耦合引起的互感以及由于X线圈和Y线圈之间的电容耦合引起的电容。此外，选择电容器件的温度系数，使得可以补偿线圈之间的互感和电容的温度系数。

10. 发明授权

US4417323A Bubble memory conductor pattern with heat sink 失效
标题翻译：泡沫记忆导体图案带散热片
公开(公告)号：US4417323A
公开(公告)日：1983-11-22
申请号：US234630
申请日：1981-02-17
申请人： Atsushi Asano , Masatoshi Takeshita , Hideki Nishida , Ryo Suzuki , Toshio Futami
发明人： Atsushi Asano , Masatoshi Takeshita , Hideki Nishida , Ryo Suzuki , Toshio Futami
IPC分类号： G11C11/14 , G11C19/08 , H01F10/06 , H01L21/3205 , H01L23/34 , H01L23/52 , H05K1/02
CPC分类号： H05K1/0209 , G11C19/085 , H01F10/06 , H01L2924/0002 , H05K2201/0769 , H05K2201/09781
摘要： A micro-pattern element has a heat discharge pattern formed on a fine line portion of a conductor pattern. Breakage caused by temperature elevation of the conductor pattern in response to the application of an electric current and resulting electromigration can be effectively prevented by the heat-discharge pattern formed on the fine line portion of the conductor pattern; thus, the reliability of the micro-pattern element can be remarkably improved.
摘要翻译：微图案元件具有形成在导体图案的细线部分上的放热图案。可以通过形成在导体图案的细线部分上的放热图案，有效地防止导体图案由于施加电流而导致的温度升高导致的破坏，导致电迁移; 因此，可以显着提高微图案元件的可靠性。

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