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71. 发明申请

US20060022247A1 Transparent amorphous carbon structure in semiconductor devices 审中-公开
公开(公告)号：US20060022247A1
公开(公告)日：2006-02-02
申请号：US11215614
申请日：2005-08-30
申请人： Zhiping Yin , Weimin Li
发明人： Zhiping Yin , Weimin Li
IPC分类号： H01L29/94 , H01L27/108
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

72. 发明申请

US20050208778A1 Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells 有权
标题翻译：在制造集成电路中沉积包含层的二氧化硅的方法，形成沟槽隔离的方法和形成存储器单元阵列的方法
公开(公告)号：US20050208778A1
公开(公告)日：2005-09-22
申请号：US10806923
申请日：2004-03-22
申请人： Weimin Li , Gurtej Sandhu
发明人： Weimin Li , Gurtej Sandhu
IPC分类号： H01L21/31 , H01L21/312 , H01L21/316 , H01L21/469 , H01L21/762 , H01L21/8234 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02145 , H01L21/02164 , H01L21/02214 , H01L21/02271 , H01L21/0228 , H01L21/3121 , H01L21/31612 , H01L21/76224 , H01L21/823462
摘要： This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over capacitor arrays of memory cells. In one implementation, a semiconductor substrate having an exposed outer first surface comprising silicon-nitrogen bonds and an exposed outer second surface comprising at least one of silicon and silicon dioxide is provided. A layer comprising a metal is deposited over at least the outer second surface. A silanol is flowed to the metal of the outer second surface and to the outer first surface effective to selectively deposit a silicon dioxide comprising layer over the outer second surface as compared to the outer first surface. Other aspects and implementations are contemplated.
摘要翻译：本发明包括在集成电路的制造中沉积包含层的二氧化硅的方法，形成沟槽隔离的方法以及在存储器单元的电容器阵列上形成位线的方法。在一个实施方案中，提供了具有包含硅 - 氮键的暴露的外部第一表面和包含硅和二氧化硅中的至少一种的暴露的外部第二表面的半导体衬底。包含金属的层至少沉积在外部第二表面上。与外部第一表面相比，硅烷醇流动到外部第二表面的金属和外部第一表面，有效地选择性地将二氧化硅包含层沉积在外部第二表面上。考虑了其他方面和实现。

73. 发明申请

US20050061234A1 Atomic layer deposition methods of forming silicon dioxide comprising layers 失效
标题翻译：形成二氧化硅层的原子层沉积方法
公开(公告)号：US20050061234A1
公开(公告)日：2005-03-24
申请号：US10669667
申请日：2003-09-23
申请人： Li Li , Weimin Li , Gurtej Sandhu
发明人： Li Li , Weimin Li , Gurtej Sandhu
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C23C16/45527 , C23C16/402
摘要： A substrate is positioned within a deposition chamber. Trimethylsilane is flowed to the chamber and a first inert gas is flowed to the chamber under conditions effective to chemisorb a first species monolayer comprising silicon onto the substrate. The first inert gas is flowed at a first rate. After forming the first species monolayer, an oxidant is flowed to the chamber and a second inert gas is flowed to the chamber under conditions effective to react the oxidant with the chemisorbed first species and form a monolayer comprising silicon dioxide on the substrate. The second inert gas flowing is at a second rate which is less than the first rate. The a) trimethylsilane and first inert gas flowing and the b) oxidant and second inert gas flowing are successively repeated effective to form a silicon dioxide comprising layer on the substrate. Other implementations and aspects are contemplated.
摘要翻译：衬底位于沉积室内。三甲基硅烷流到室中，并且第一惰性气体在有效地化学吸附包含硅的第一物质单层到衬底上的条件下流动到室中。第一惰性气体以第一速率流动。在形成第一物质单层之后，氧化剂流到室，并且在有效使氧化剂与化学吸附的第一种类反应的条件下，将第二惰性气体流入室，并在衬底上形成包含二氧化硅的单层。第二惰性气体流动的速度小于第一速率。 a）三甲基硅烷和第一惰性气体流动，b）氧化剂和第二惰性气体流动相继重复有效地在基底上形成含二氧化硅的层。考虑其他实现和方面。

74. 发明申请

US20050056835A1 Transparent amorphous carbon structure in semiconductor devices 有权
标题翻译：半导体器件中透明无定形碳结构
公开(公告)号：US20050056835A1
公开(公告)日：2005-03-17
申请号：US10789736
申请日：2004-02-27
申请人： Zhiping Yin , David Williams , Weimin Li
发明人： Zhiping Yin , David Williams , Weimin Li
IPC分类号： H01L21/314 , H01L29/04
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.
摘要翻译：形成透明无定形碳层。透明无定形碳层具有低吸收系数，使得无定形碳在可见光下是透明的。透明无定形碳层可用于不同目的的半导体器件中。透明无定形碳层可以包括在半导体器件中的最终结构中。在制造半导体器件期间，透明非晶碳层也可用作蚀刻工艺中的掩模。

75. 发明授权

US06756293B2 Combined gate cap or digit line and spacer deposition using HDP 失效
标题翻译：使用HDP组合门帽或数字线和间隔层沉积
公开(公告)号：US06756293B2
公开(公告)日：2004-06-29
申请号：US10319694
申请日：2002-12-16
申请人： Weimin Li , Sujit Sharan , Gurtej Sandhu
发明人： Weimin Li , Sujit Sharan , Gurtej Sandhu
IPC分类号： H01L214763
CPC分类号： H01L29/6656 , C23C16/345 , C23C16/402 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/3185 , H01L21/76832 , H01L21/76834 , H01L21/76885
摘要： A method for fabricating gate electrodes and gate interconnects with a protective silicon oxide or silicon nitride cap and spacer formed by high density plasma chemical vapor deposition (HDPCVD). Silicon oxide or silicon nitride is deposited in a reaction zone of a HDPCVD reactor while providing two or more selected substrate bias powers, source powers and/or selected gas mixtures to tailor the shape and thickness of the film for desired applications. In one embodiment, a low bias power of below 500 Watts is provided in a first stage HDPCVD and the bias power is then increased to between 500 and 3000 Watts for a second stage to produce a protective film having thin sidewall spacers for enhanced semiconductor device density and a relatively thick cap.
摘要翻译：一种通过高密度等离子体化学气相沉积（HDPCVD）形成的具有保护性氧化硅或氮化硅帽和间隔物的栅电极和栅极互连的方法。氧化硅或氮化硅沉积在HDPCVD反应器的反应区中，同时提供两种或更多种选择的底物偏压功率，源功率和/或选定的气体混合物以根据期望的应用来定制膜的形状和厚度。在一个实施例中，在第一级HDPCVD中提供低于500瓦的低偏置功率，然后将偏置功率增加到500至3000瓦之间，用于第二级，以产生具有薄侧壁间隔件的保护膜，用于增强半导体器件密度和一个相对较厚的帽子。

76. 发明授权

US06489199B2 Multiple step methods for forming conformal layers 有权
标题翻译：用于形成保形层的多步法
公开(公告)号：US06489199B2
公开(公告)日：2002-12-03
申请号：US09919313
申请日：2001-07-31
申请人： Weimin Li , Gurtej S. Sandhu
发明人： Weimin Li , Gurtej S. Sandhu
IPC分类号： H01L218242
CPC分类号： H01L21/76868 , C23C16/045 , C23C16/34 , H01L21/76843 , H01L21/76877 , H01L21/76897 , H01L28/60
摘要： A two-step formation process provides conformal coverage at both the bottom surface and one or more side walls of an opening for various applications, e.g., high aspect ratio contact liners or storage cell capacitor electrode applications, and provides conformal coverage on any features requiring such coverage. A method for forming a conformal layer in the fabrication of integrated circuits includes providing a substrate assembly including at least a generally horizontal first surface and a second surface extending therefrom. A first portion of the layer is formed selectively on the horizontal first surface during a first period of time and a second portion of the layer is deposited selectively on the second surface during a second period of time. Further, one illustrative process for forming tungsten nitride in the fabrication of integrated circuits includes forming tungsten nitride on the horizontal first surface during a first period of time and depositing tungsten nitride on the second surface during a second period of time by plasma enhanced chemical vapor deposition. The tungsten nitride may be formed on the first surface by plasma enhanced chemical vapor deposition using a first reactant gas mixture including WF6, at least one of NF3 and N2, and H2 with the tungsten nitride being deposited on the second surface by plasma enhanced chemical vapor deposition using a second reactant gas mixture including WF6, at least one of NF3 and N2, H2, and He.
摘要翻译：两步形成工艺在用于各种应用的开口的底表面和一个或多个侧壁（例如，高纵横比接触衬垫或存储单元电容器电极应用）上提供适形覆盖，并且对要求这样的任何特征提供适形覆盖覆盖面在集成电路的制造中形成保形层的方法包括提供包括至少大致水平的第一表面和从其延伸的第二表面的基板组件。选择性地在第一时间段内在水平的第一表面上形成该层的第一部分，并且在第二时间段期间该层的第二部分选择性地沉积在第二表面上。此外，在集成电路的制造中形成氮化钨的一个说明性方法包括在第一时间段内在水平的第一表面上形成氮化钨，并且在第二时间段内通过等离子体增强化学气相沉积在第二表面上沉积氮化钨。可以通过使用包括WF6，NF3和N2中的至少一种的第一反应气体混合物和通过等离子体增强化学蒸气沉积在第二表面上的H 2与等离子体增强化学气相沉积在第一表面上形成氮化钨使用包括WF6，NF3和N2，H2和He中的至少一种的第二反应气体混合物进行沉积。

77. 发明授权

US06395647B1 Chemical treatment of semiconductor substrates 有权
标题翻译：半导体衬底的化学处理
公开(公告)号：US06395647B1
公开(公告)日：2002-05-28
申请号：US09388570
申请日：1999-09-02
申请人： Li Li , Weimin Li
发明人： Li Li , Weimin Li
IPC分类号： H01L2131
CPC分类号： H01L21/316 , H01L21/76232 , H01L21/76826 , H01L21/76828 , H01L21/76837 , Y10S438/902
摘要： A method is disclosed for removing liquids from a semiconductor substrate by contacting the liquid on the substrate with a liquid which attracts the liquid on the substrate, separating the liquids from the substrate, and inducing a phase transition in a layer on the substrate. In particular, the method is applicable to removing water from a water-containing layer on the substrate by contacting the layer with a hygroscopic liquid. Trenches on a substrate can be isolated by filling the trenches with a water-containing gel formed by reacting silane and hydrogen peroxide. The gel is contacted with sulfuric acid to remove a portion of the water from the gel before annealing to form silica in the trenches. Unlike filled trenches formed by conventional technology, there are no voids in the bottom of the trenches. The method is also applicable to forming dielectric layers which cover metal lines, low-dielectric layers, and interlayer dielectric layers. The liquid may be applied to the substrate by chemical vapor deposition or by spin-applying.
摘要翻译：公开了一种通过使衬底上的液体接触吸附衬底上的液体的液体，将液体与衬底分离并引起衬底上的层中的相变来从半导体衬底去除液体的方法。特别地，该方法适用于通过使该层与吸湿性液体接触来从基底上的含水层除去水分。通过用硅烷和过氧化氢反应形成的含水凝胶填充沟槽可以分离衬底上的沟槽。将凝胶与硫酸接触以在退火之前从凝胶中除去一部分水以在沟槽中形成二氧化硅。与常规技术形成的填充沟槽不同，沟槽底部没有空隙。该方法也适用于形成覆盖金属线，低电介质层和层间电介质层的电介质层。液体可以通过化学气相沉积或通过旋涂施加到基底上。

78. 发明授权

US06281072B1 Multiple step methods for forming conformal layers 有权
标题翻译：用于形成保形层的多步法
公开(公告)号：US06281072B1
公开(公告)日：2001-08-28
申请号：US09629998
申请日：2000-08-01
申请人： Weimin Li , Gurtej S. Sandhu
发明人： Weimin Li , Gurtej S. Sandhu
IPC分类号： H01L218242
CPC分类号： H01L21/76868 , C23C16/045 , C23C16/34 , H01L21/76843 , H01L21/76877 , H01L21/76897 , H01L28/60
摘要： A two-step formation process provides conformal coverage at both the bottom surface and one or more side walls of an opening for various applications, e.g., high aspect ratio contact liners or storage cell capacitor electrode applications, and provides conformal coverage on any features requiring such coverage. A method for forming a conformal layer in the fabrication of integrated circuits includes providing a substrate assembly including at least a generally horizontal first surface and a second surface extending therefrom. A first portion of the layer is formed selectively on the horizontal first surface during a first period of time and a second portion of the layer is deposited selectively on the second surface during a second period of time. Further, one illustrative process for forming tungsten nitride in the fabrication of integrated circuits includes forming tungsten nitride on the horizontal first surface during a first period of time and depositing tungsten nitride on the second surface during a second period of time by plasma enhanced chemical vapor deposition. The tungsten nitride may be formed on the first surface by plasma enhanced chemical vapor deposition using a first reactant gas mixture including WF6, at least one of NF3 and N2, and H2 with the tungsten nitride being deposited on the second surface by plasma enhanced chemical vapor deposition using a second reactant gas mixture including WF6, at least one of NF3 and N2, H2, and He.
摘要翻译：两步形成工艺在用于各种应用的开口的底表面和一个或多个侧壁（例如，高纵横比接触衬垫或存储单元电容器电极应用）上提供适形覆盖，并且对要求这样的任何特征提供适形覆盖覆盖面在集成电路的制造中形成保形层的方法包括提供包括至少大致水平的第一表面和从其延伸的第二表面的基板组件。选择性地在第一时间段内在水平的第一表面上形成该层的第一部分，并且在第二时间段期间该层的第二部分选择性地沉积在第二表面上。此外，在集成电路的制造中形成氮化钨的一个说明性方法包括在第一时间段内在水平的第一表面上形成氮化钨，并且在第二时间段内通过等离子体增强化学气相沉积在第二表面上沉积氮化钨。可以通过使用包括WF6，NF3和N2中的至少一种的第一反应气体混合物和通过等离子体增强化学蒸气沉积在第二表面上的H 2与等离子体增强化学气相沉积在第一表面上形成氮化钨使用包括WF6，NF3和N2，H2和He中的至少一种的第二反应气体混合物进行沉积。

79. 发明授权

US6156674A Semiconductor processing methods of forming insulative materials 有权
标题翻译：形成绝缘材料的半导体加工方法
公开(公告)号：US6156674A
公开(公告)日：2000-12-05
申请号：US200035
申请日：1998-11-25
申请人： Weimin Li , Zhiping Yin
发明人： Weimin Li , Zhiping Yin
IPC分类号： H01L21/316 , H01L21/469
CPC分类号： H01L21/02126 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02277 , H01L21/31633 , H01L21/31658
摘要： In one aspect, the invention encompasses a semiconductor processing method wherein a first gaseous precursor compound is combined with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen. A layer of the material is formed over a semiconductive substrate. In another aspect, the invention encompasses another semiconductor processing method. Methylsilane is combined with a form of oxygen other than H.sub.2 O.sub.2 to form an insulative compound comprising silicon bound to CH.sub.3 groups and oxygen. A layer of the insulative compound is formed over a semiconductive substrate. In yet another aspect, the invention encompasses yet another semiconductor processing method. Methylsilane is subjected to a plasma treatment to form a layer over a semiconductive substrate, the layer comprises silicon bound to CH.sub.3 groups. The layer is exposed to oxygen to convert the layer to an insulative compound comprising silicon bound to oxygen as well as the CH.sub.3 groups.
摘要翻译：在一个方面，本发明包括半导体加工方法，其中第一气态前体化合物与第二气态前体化合物组合以形成包含碳，硅和氧的材料。一层材料形成在半导体衬底上。在另一方面，本发明包括另一种半导体处理方法。甲基硅烷与除H 2 O 2以外的氧气形式组合以形成包含结合至CH 3基团和氧的硅的绝缘化合物。一层绝缘化合物形成在半导体衬底上。在另一方面，本发明还包括另一种半导体处理方法。对甲基硅烷进行等离子体处理以在半导体基底上形成层，该层包含与CH3基团结合的硅。该层暴露于氧气以将该层转化为包含与氧结合的硅以及CH 3基团的绝缘化合物。

80. 发明申请

US20210384037A1 NEED FOR Si3N4 SELECTIVE REMOVAL BY WET CHEMISTRY 有权
公开(公告)号：US20210384037A1
公开(公告)日：2021-12-09
申请号：US17445560
申请日：2021-08-20
申请人： Weimin LI
发明人： Weimin LI
IPC分类号： H01L21/311 , H01L21/67
摘要： A system for processing a substrate and a method for processing a substrate are disclosed. The system for processing a substrate includes a processing chamber configured to receive the substrate, wherein the substrate is exposed to an etchant in the processing chamber to remove a portion of the substrate and generate access to the substrate. A by-product in the etching solution; and a by-product removing section configured to convert the by-product into a precipitate and remove the precipitate, thereby removing the by-product. The Etching solution is circulated back to the processing chamber after the by-product is removed.

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