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71. 发明授权

US06835995B2 Low dielectric constant material for integrated circuit fabrication 有权
标题翻译：用于集成电路制造的低介电常数材料
公开(公告)号：US06835995B2
公开(公告)日：2004-12-28
申请号：US10033656
申请日：2001-12-27
申请人： Weimin Li
发明人： Weimin Li
IPC分类号： H01L2900
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/56 , H01L21/02211 , H01L21/02271 , H01L21/0234 , H01L21/02362 , H01L21/31612 , H01L21/76801
摘要： A method is provided for forming a material with a low dielectric constant, suitable for electrical isolation in integrated circuits. The material and method of manufacture has particular use as an interlevel dielectric between metal lines in integrated circuits. In a disclosed embodiment, methylsilane is reacted with hydrogen peroxide to deposit a silicon hydroxide layer incorporating carbon. The layer is then treated by exposure to a plasma containing oxygen, and annealing the layer at a temperature of higher than about 450° C. or higher.
摘要翻译：提供了一种形成具有低介电常数的材料的方法，适用于集成电路中的电隔离。该材料和制造方法特别用作集成电路中的金属线之间的层间电介质。在公开的实施方案中，甲基硅烷与过氧化氢反应以沉积包含碳的氢氧化硅层。然后通过暴露于含有氧的等离子体处理该层，并在高于约450℃或更高的温度下退火该层。

72. 发明授权

US06719919B1 Composition of matter 有权
标题翻译：物质的组成
公开(公告)号：US06719919B1
公开(公告)日：2004-04-13
申请号：US09641826
申请日：2000-08-17
申请人： Weimin Li , Zhiping Yin
发明人： Weimin Li , Zhiping Yin
IPC分类号： C01B33029
CPC分类号： H01L21/76834 , H01L21/3185 , H01L21/76801 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.
摘要翻译：一方面，本发明包括一种半导体处理方法，其中在半导体衬底上形成导电含铜材料，并且在导电材料附近形成第二材料。在导电材料和第二材料之间形成阻挡层。阻挡层包括具有与氮和有机材料化学键合的硅的化合物。在另一方面，本发明包括包含与氮和有机材料化学键合的硅的物质组合物。氮不与碳结合。另一方面，本发明包括半导体处理方法。提供半导体衬底并且在半导体衬底上形成层。该层包括具有与氮和有机材料化学键合的硅的化合物。

73. 发明授权

US06576538B2 Technique for high efficiency metalorganic chemical vapor deposition 有权
标题翻译：高效金属有机化学气相沉积技术
公开(公告)号：US06576538B2
公开(公告)日：2003-06-10
申请号：US09945567
申请日：2001-08-30
申请人： Weimin Li , Sam Yang
发明人： Weimin Li , Sam Yang
IPC分类号： H01L2144
CPC分类号： C23C16/45523 , C23C16/18 , H01L28/65
摘要： A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
摘要翻译：一种使用化学气相沉积更有效地形成诸如导电层和电极的导电元件的技术。将具有改善步骤覆盖度的有机化合物的导电前体气体，例如铂前体气体引入化学气相沉积室。反应物也被引入室中，与导电元件上的残余有机化合物反应，以便从成核位置除去有机化合物，从而允许更有效的后续化学气相沉积导电元件。

74. 发明授权

US06539341B1 Method and apparatus for log information management and reporting 失效
标题翻译：日志信息管理和报告的方法和装置
公开(公告)号：US06539341B1
公开(公告)日：2003-03-25
申请号：US09706947
申请日：2000-11-06
申请人： Weimin Li , Sajid Hussain , Andrew Nakao , Vikas Khandelwal
发明人： Weimin Li , Sajid Hussain , Andrew Nakao , Vikas Khandelwal
IPC分类号： G06F300
CPC分类号： G01R31/31935 , G01R31/3172
摘要： Log entries in a system that produces status or other log data (ASIC verification system, for example) are saved in a circular buffer until a trigger event occurs. Typically, the system operates on a Device Under Test (DUT), but may apply to other systems that simply monitor or gather information. When the trigger occurs, a window of the saved log entries are saved to disk. A level of granularity of the reporting for the log entries is set at any point between low level (cycle based) reporting (recording every event) to high level functional descriptions of the processes or activities performed by the system, DUT, or other item being monitored. Log data from various modules of the system are grouped together to provide a logical view of the recorded log entries.
摘要翻译：产生状态或其他日志数据的系统中的日志条目（例如，ASIC验证系统）将保存在循环缓冲区中，直到触发事件发生。通常，系统在被测器件（DUT）上运行，但可能适用于简单地监视或收集信息的其他系统。当触发发生时，保存的日志条目的窗口将保存到磁盘。对于日志条目的报告的粒度级别设置在低级（基于周期）报告（记录每个事件）之间的任何时间点到由系统，DUT或其他项目执行的进程或活动的高级功能描述监控。将来自系统的各个模块的日志数据分组在一起以提供记录的日志条目的逻辑视图。

75. 发明授权

US06515363B2 In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications 有权
公开(公告)号：US06515363B2
公开(公告)日：2003-02-04
申请号：US09407334
申请日：1999-09-29
申请人： Weimin Li
发明人： Weimin Li
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/28568 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L21/76862 , H01L21/76868 , H01L21/76876 , Y10S438/974
摘要： A method of de-oxidizing a surface onto which a refractory metal or molecule which contains a refractory metal atom will be adhered. The method utilizes a plasma which includes a gas such as argon, nitrogen, helium or hydrogen, or a mixture of any of the foregoing, to remove oxygen molecules from the surface to which adherence of the refractory metal is desired. Radicals in the plasma coat the surface to prevent further oxidation thereof. The method also includes techniques for depositing refractory metals onto a surface such as a substrate or layer of semiconductor material on which integrated circuitry has been fabricated.

76. 发明授权

US06198144B1 Passivation of sidewalls of a word line stack 有权
标题翻译：钝化字线堆叠的侧壁
公开(公告)号：US06198144B1
公开(公告)日：2001-03-06
申请号：US09376232
申请日：1999-08-18
申请人： Pai-Hung Pan , Martin C. Roberts , Gurtei S. Sandhu , Weimin Li , Christopher W. Hill , Vishnu K. Agarwal
发明人： Pai-Hung Pan , Martin C. Roberts , Gurtei S. Sandhu , Weimin Li , Christopher W. Hill , Vishnu K. Agarwal
IPC分类号： H01L213205
CPC分类号： H01L21/28167 , H01L21/28061 , H01L21/28176 , H01L27/10873 , H01L29/6653 , H01L29/66545
摘要： A method of fabricating an integrated circuit on a wafer includes forming a gate electrode stack over a gate dielectric and forming nitride spacers along sidewalls of the gate electrode stack other than along lowermost portions of the sidewalls. Subsequently, a reoxidation process is performed with respect to the gate dielectric. By providing the nitride spacers along exposed surfaces of conductive barrier and metal layers of the word line stack, those surfaces can be passivated, thereby preventing or reducing the conversion of those layers to non-conductive compounds during the reoxidation process. At the same time, the nitride spacers can be formed so that they do not interfere with the subsequent reoxidation of the gate dielectric. An integrated circuit having a gate electrode stack with nitride spacers extending along sidewalls of the gate electrode stack other than along lowermost portions of the sidewalls is also disclosed.
摘要翻译：在晶片上制造集成电路的方法包括在栅极电介质上形成栅极电极堆叠，并且沿着侧壁的最下部分沿着栅电极堆叠的侧壁形成氮化物间隔物。随后，对栅极电介质进行再氧化处理。通过在字线堆叠的导电阻挡层和金属层的暴露表面上设置氮化物间隔物，可以钝化那些表面，从而在再氧化过程期间防止或减少这些层向非导电化合物的转化。同时，可以形成氮化物间隔物，使得它们不干扰栅极电介质的随后的再氧化。还公开了具有栅极电极堆叠的集成电路，其具有沿着侧壁的侧壁延伸的氮化物间隔物，而不是沿着侧壁的最下部分延伸。

77. 发明申请

US20210384037A1 NEED FOR Si3N4 SELECTIVE REMOVAL BY WET CHEMISTRY 有权
公开(公告)号：US20210384037A1
公开(公告)日：2021-12-09
申请号：US17445560
申请日：2021-08-20
申请人： Weimin LI
发明人： Weimin LI
IPC分类号： H01L21/311 , H01L21/67
摘要： A system for processing a substrate and a method for processing a substrate are disclosed. The system for processing a substrate includes a processing chamber configured to receive the substrate, wherein the substrate is exposed to an etchant in the processing chamber to remove a portion of the substrate and generate access to the substrate. A by-product in the etching solution; and a by-product removing section configured to convert the by-product into a precipitate and remove the precipitate, thereby removing the by-product. The Etching solution is circulated back to the processing chamber after the by-product is removed.

78. 发明申请

US20210020652A1 Using Metal Gate First Method to Build Three-Dimensional Non-Volatile Memory Devices 有权
公开(公告)号：US20210020652A1
公开(公告)日：2021-01-21
申请号：US16517600
申请日：2019-07-21
申请人： Weimin Li
发明人： Weimin Li
IPC分类号： H01L27/11582 , H01L27/11556 , H01L27/11524 , H01L27/1157
摘要： A three-dimensional NAND memory system and method of making is disclosed. The three-dimensional NAND memory system may comprise a stack of horizontal layers and a vertical structure. The stack of horizontal layers may be formed on a semiconductor substrate. The stack of horizontal layers may comprise a plurality gate electrode layers alternating with a plurality of insulating layers. The gate electrode layer may comprise conductive lines alternate with insulating lines. The insulating lines may be formed of insulating materials. The conductive lines are formed of a metal comprising W. The vertical structure may extend vertically through the stack of horizontal layers. The vertical structure may comprise a blocking dielectric layer, a charge storage layer, a tunnel dielectric layer, and a vertical channel structure. The charge storage layer may be formed over the blocking dielectric layer. The tunnel dielectric layer may be formed over the charge storage layer. The tunnel dielectric layer may be sandwiched between the vertical channel structure and the charge storage layer. There is no metal nitride layer in the vertical structure between the stack of horizontal layers and blocking dielectric layer.

79. 发明授权

US09322066B2 Predictors for cancer treatment 有权
标题翻译：预防癌症治疗
公开(公告)号：US09322066B2
公开(公告)日：2016-04-26
申请号：US13569517
申请日：2012-08-08
申请人： Deborah Ricci , Weimin Li , Erin DeVay Henitz
发明人： Deborah Ricci , Weimin Li , Erin DeVay Henitz
IPC分类号： G01N33/574 , A61K39/395 , C12Q1/68 , A61K31/196 , A61K31/573 , A61K31/69 , G01N33/92 , A61K31/19 , A61K31/198
CPC分类号： C12Q1/6886 , A61K31/19 , A61K31/196 , A61K31/198 , A61K31/573 , A61K31/69 , A61K39/39558 , G01N33/57407 , G01N33/92 , G01N2800/52 , A61K2300/00
摘要： The present invention provides methods of predicting a response to a cancer treatment by determining CD68 level or PSMB1 (P11A) polymorphism in a biological sample and the presence or quantity of a second biomarker in the patient. The invention also provides kits and methods for treating cancer.
摘要翻译：本发明提供了通过测定生物样品中的CD68水平或PSMB1（P11A）多态性以及患者中第二生物标志物的存在或数量来预测癌症治疗反应的方法。本发明还提供了治疗癌症的试剂盒和方法。

80. 发明授权

US08367575B2 High-refractivity low-dispersion optical glass 有权
$High-refractivity low-dispersion optical glass$
标题翻译：高折射率低分散光学玻璃
公开(公告)号：US08367575B2
公开(公告)日：2013-02-05
申请号：US13123512
申请日：2009-07-15
申请人： Bo Kuang , Wei Wen , Weimin Li
发明人： Bo Kuang , Wei Wen , Weimin Li
IPC分类号： C03C3/068
CPC分类号： C03C3/068
摘要： The invention provides an environment-friendly optical glass with high refractive index, low dispersion and high light transmittance. The optical glass includes 6%-17% of B2O3, 2-10% of SiO2, more than 25% but less than 45% of La2O3, 5-25% of Gd2O3, 0-3% of Nb2O5, more than 19% but less than 27% of Ta2O5, 0-16% of ZnO, 0-5% of BaO, 0-5% of CaO, 0-5% of SrO, 0-9% of ZrO2, 0-8% of Y2O3, 0-8% of Yb2O3, 0-5% of WO3, 0-2% of Li2O, Na2O and K2O, equal to 0.01% but less than 0.1% of Sb2O3 and 0-1% of SnO2 optical glass. The environment-friendly optical glass does not contain GeO2, and has refractive index of 1.85-1.90, Abbe number of 35-45, the corresponding wavelength below 440 nm when transmittance thereof reaches 80% and high transmittance.
摘要翻译：本发明提供了一种具有高折射率，低色散和高透光率的环保光学玻璃。光学玻璃包括6％-17％的B 2 O 3，2〜10％的SiO 2，超过25％但小于45％的La 2 O 3，5〜25％的Gd 2 O 3，0〜3％的Nb 2 O 5，超过19％少于27％的Ta2O5，0-16％的ZnO，0-5％的BaO，0-5％的CaO，0-5％的SrO，0-9％的ZrO2，0-8％的Y2O3，0 -8％的Yb2O3，0-5％的WO3,0-2％的Li2O，Na2O和K2O，等于0.01％，但小于0.1％的Sb2O3和0-1％的SnO2光学玻璃。环境友好的光学玻璃不含GeO 2，折射率为1.85-1.90，阿贝数为35-45，当其透光率达到80％时，相应的波长低于440nm，透光率高。

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