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1. 发明授权

US08486612B2 Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials 有权
标题翻译：使用旋涂，光图案化，层间介电材料形成中间半导体器件结构的方法
公开(公告)号：US08486612B2
公开(公告)日：2013-07-16
申请号：US12951196
申请日：2010-11-22
申请人： Weimin Li , Gurtej S. Sandhu
发明人： Weimin Li , Gurtej S. Sandhu
IPC分类号： G03F7/20
CPC分类号： G03F7/095 , G03F7/0757 , H01L21/02134 , H01L21/02137 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02348 , H01L21/311 , Y10T428/31663
摘要： A cap material may be formed over a photopatternable material on a semiconductor substrate. The cap material absorbs or reflects radiation and protects the photopatternable material from a first wavelength of radiation used in patterning the photoresist layer. Upon exposure to a first wavelength of radiation, the photopatternable material may be converted into a silicon dioxide-based material. The silicon dioxide-based material may be selectively removed.
摘要翻译：盖材料可以形成在半导体衬底上的可光图案化材料上。盖材料吸收或反射辐射并保护光致图案材料免受用于图案化光刻胶层的第一波长辐射。当暴露于第一波长的辐射时，可以将光图案化材料转化为基于二氧化硅的材料。可以选择性地除去基于二氧化硅的材料。

2. 发明授权

US08330136B2 High concentration nitrogen-containing germanium telluride based memory devices and processes of making 有权
标题翻译：高浓度含氮锗碲基记忆体及其制备方法
公开(公告)号：US08330136B2
公开(公告)日：2012-12-11
申请号：US13132369
申请日：2009-12-04
申请人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
发明人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
IPC分类号： H01L29/02 , H01L47/00 , H01L21/00
CPC分类号： H01L45/1683 , C23C16/305 , C23C16/34 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.
摘要翻译： PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％至约40％。表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m高达约15％。组合物是膜的形式，并且氮允许膜基本上保形沉积到基底上。用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。在制造使用该工艺的相变装置时，将膜进行退火和抛光。

3. 发明申请

US20120064719A1 METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES 有权
标题翻译：用辅助金属物种沉积金属的方法和组合物
公开(公告)号：US20120064719A1
公开(公告)日：2012-03-15
申请号：US13256832
申请日：2010-03-17
申请人： Jorge A. Lubguban, JR. , Thomas M. Cameron , Chongying Xu , Weimin Li
发明人： Jorge A. Lubguban, JR. , Thomas M. Cameron , Chongying Xu , Weimin Li
IPC分类号： H01L21/28 , B05D5/12 , H01B1/00
CPC分类号： C23C16/0272 , C23C16/18 , C23C16/45534 , H01L28/65
摘要： A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non- metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.
摘要翻译：一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌和锶共沉积。该方法允许在非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。

4. 发明申请

US20110260132A1 HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING 有权
标题翻译：含有高浓度含氮化学物质的基于德耳姆的基于记忆体的器件及其制备方法
公开(公告)号：US20110260132A1
公开(公告)日：2011-10-27
申请号：US13132369
申请日：2009-12-04
申请人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
发明人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
IPC分类号： H01L45/00 , H01L21/205
CPC分类号： H01L45/1683 , C23C16/305 , C23C16/34 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.
摘要翻译： PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％至约40％。表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m高达约15％。组合物是膜的形式，并且氮允许膜基本上保形沉积到基底上。用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。在制造使用该工艺的相变装置时，将膜进行退火和抛光。

5. 发明授权

US07858518B2 Method for forming a selective contact and local interconnect in situ 有权
标题翻译：在原位形成选择性接触和局部互连的方法
公开(公告)号：US07858518B2
公开(公告)日：2010-12-28
申请号：US10067410
申请日：2002-02-04
申请人： Christopher W. Hill , Weimin Li , Gurtej S. Sandhu
发明人： Christopher W. Hill , Weimin Li , Gurtej S. Sandhu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/28562 , H01L21/28568
摘要： A process for the in situ formation of a selective contact and a local interconnect on a semiconductor substrate. The exposed semiconductor substrate regions of a semiconductor device structure may be treated in a plasma to enhance the adhesiveness of a selective contact thereto. The semiconductor device structure is positioned within a reaction chamber, wherein a selective contact is deposited onto the exposed semiconductor substrate regions. Any residual selective contact material may be removed from oxide surfaces either intermediately or after selective contact deposition. While the semiconductor device remains in the reaction chamber, a local interconnect is deposited over the semiconductor device structure. The local interconnect may then be patterned. Subsequent layers may be deposited over the local interconnect. The present invention also includes semiconductor device structures formed by the inventive process.
摘要翻译：用于在半导体衬底上原位形成选择性接触和局部互连的方法。可以在等离子体中处理半导体器件结构的暴露的半导体衬底区域以增强与其的选择性接触的粘合性。半导体器件结构位于反应室内，其中选择性接触沉积在暴露的半导体衬底区域上。任何残留的选择性接触材料可以在中间或选择性接触沉积之后从氧化物表面去除。当半导体器件保留在反应室中时，在半导体器件结构上沉积局部互连。然后可以对局部互连进行图案化。随后的层可以沉积在局部互连上。本发明还包括通过本发明方法形成的半导体器件结构。

6. 发明申请

US20100209598A1 IN SITU GENERATION OF RuO4 FOR ALD OF Ru AND Ru RELATED MATERIALS 有权
标题翻译： RuO钌RuO4原位生成相关材料
公开(公告)号：US20100209598A1
公开(公告)日：2010-08-19
申请号：US12705587
申请日：2010-02-13
申请人： Chongying Xu , Weimin Li , Thomas M. Cameron
发明人： Chongying Xu , Weimin Li , Thomas M. Cameron
IPC分类号： B05D5/12 , C23C16/00
CPC分类号： H01G4/1209 , C23C16/40 , C23C16/4488 , C23C16/45553 , H01G4/008 , H01G4/33 , H01L21/02175 , H01L21/02194 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604
摘要： Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.
摘要翻译：用于在微电子器件基底上用于气相沉积（例如原子层沉积（ALD））含钌膜的原位四氧化钌的装置和方法。可以根据需要通过钌或二氧化钌与氧气或臭氧等氧气反应来生成四氧化钌。在一个实施方案中，由此产生的四氧化钌与锶有机金属前体一起被用于具有极高平滑度和纯度的钌酸锶薄膜的原子层沉积。

7. 发明申请

US20090112009A1 AMORPHOUS GE/TE DEPOSITION PROCESS 有权
标题翻译：非晶态GE / TE沉积工艺
公开(公告)号：US20090112009A1
公开(公告)日：2009-04-30
申请号：US12263403
申请日：2008-10-31
申请人： Philip S.H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
发明人： Philip S.H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
IPC分类号： H01L21/8246 , B32B15/00 , C07F7/30
CPC分类号： C07F7/30 , C23C16/305 , C23C16/448 , C23C16/45534 , C23C16/45542 , C23C16/56 , H01L45/06 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
摘要翻译：锗，碲和/或锑前体有用地用于形成含锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。还描述了使用这些前体形成非晶膜的方法。进一步描述的是使用[{nBuC（iPrN）2} 2Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。

8. 发明授权

US07298024B2 Transparent amorphous carbon structure in semiconductor devices 有权
公开(公告)号：US07298024B2
公开(公告)日：2007-11-20
申请号：US11458642
申请日：2006-07-19
申请人： Zhiping Yin , David J. Williams , Weimin Li
发明人： Zhiping Yin , David J. Williams , Weimin Li
IPC分类号： H01L23/58
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

9. 发明授权

US07235499B1 Semiconductor processing methods 有权
公开(公告)号：US07235499B1
公开(公告)日：2007-06-26
申请号：US09234233
申请日：1999-01-20
申请人： Weimin Li , John Q. Li
发明人： Weimin Li , John Q. Li
IPC分类号： H01L21/31
CPC分类号： H01L21/78 , H01L21/02126 , H01L21/02164 , H01L21/02271 , H01L21/02348 , H01L21/31608 , H01L21/31633
摘要： In one aspect, the invention encompasses a semiconductor processing method. A layer of material is formed over a semiconductive wafer substrate. Some portions of the layer are exposed to energy while other portions are not exposed. The exposure to energy alters physical properties of the exposed portions relative to the unexposed portions. After the portions are exposed, the exposed and unexposed portions of the layer are subjected to common conditions. The common conditions are effective to remove the material and comprise a rate of removal that is influenced by the altered physical properties of the layer. The common conditions remove either the exposed or unexposed portions faster than the other of the exposed and unexposed portions. After the selective removal of the exposed or unexposed portions, and while the other of the exposed and unexposed portions remains over the substrate, the wafer is cut into separated die. In another aspect, the invention encompasses another semiconductor processing method. A layer of (CH3)ySi(OH)4−y is formed over a substrate. Some portions of the layer are exposed to ultraviolet light while other portions are not exposed. The exposure to ultraviolet light converts the exposed portions to (CH3)xSiO2−x. After the exposure to ultraviolet light, the exposed and unexposed portions of the layer are subjected to hydrofluoric acid to selectively remove the (CH3)ySi(OH)4−y of the unexposed portions relative to the (CH3)xSiO2−x of the exposed portions.

10. 发明授权

US07220683B2 Transparent amorphous carbon structure in semiconductor devices 有权
标题翻译：半导体器件中透明无定形碳结构
公开(公告)号：US07220683B2
公开(公告)日：2007-05-22
申请号：US10789736
申请日：2004-02-27
申请人： Zhiping Yin , David J. Williams , Weimin Li
发明人： Zhiping Yin , David J. Williams , Weimin Li
IPC分类号： H01L21/469
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.
摘要翻译：形成透明无定形碳层。透明无定形碳层具有低吸收系数，使得无定形碳在可见光下是透明的。透明无定形碳层可用于不同目的的半导体器件中。透明无定形碳层可以包括在半导体器件中的最终结构中。在制造半导体器件期间，透明非晶碳层也可用作蚀刻工艺中的掩模。

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