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1. 发明申请

US20050056835A1 Transparent amorphous carbon structure in semiconductor devices 有权
标题翻译：半导体器件中透明无定形碳结构
公开(公告)号：US20050056835A1
公开(公告)日：2005-03-17
申请号：US10789736
申请日：2004-02-27
申请人： Zhiping Yin , David Williams , Weimin Li
发明人： Zhiping Yin , David Williams , Weimin Li
IPC分类号： H01L21/314 , H01L29/04
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.
摘要翻译：形成透明无定形碳层。透明无定形碳层具有低吸收系数，使得无定形碳在可见光下是透明的。透明无定形碳层可用于不同目的的半导体器件中。透明无定形碳层可以包括在半导体器件中的最终结构中。在制造半导体器件期间，透明非晶碳层也可用作蚀刻工艺中的掩模。

2. 发明申请

US20060244086A1 TRANSPARENT AMORPHOUS CARBON STRUCTURE IN SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件中透明非晶态碳结构
公开(公告)号：US20060244086A1
公开(公告)日：2006-11-02
申请号：US11458642
申请日：2006-07-19
申请人： Zhiping Yin , David Williams , Weimin Li
发明人： Zhiping Yin , David Williams , Weimin Li
IPC分类号： H01L29/82 , H01L27/14 , H01L29/84
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.
摘要翻译：形成透明无定形碳层。透明无定形碳层具有低吸收系数，使得无定形碳在可见光下是透明的。透明无定形碳层可用于不同目的的半导体器件中。透明无定形碳层可以包括在半导体器件中的最终结构中。在制造半导体器件期间，透明非晶碳层也可用作蚀刻工艺中的掩模。

3. 发明授权

US07132201B2 Transparent amorphous carbon structure in semiconductor devices 有权
公开(公告)号：US07132201B2
公开(公告)日：2006-11-07
申请号：US10661379
申请日：2003-09-12
申请人： Zhiping Yin , Weimin Li
发明人： Zhiping Yin , Weimin Li
IPC分类号： G01F9/00 , G03C5/00
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

4. 发明授权

US07067415B2 Low k interlevel dielectric layer fabrication methods 失效
公开(公告)号：US07067415B2
公开(公告)日：2006-06-27
申请号：US10205930
申请日：2002-07-25
申请人： Weimin Li , Zhiping Yin , William Budge
发明人： Weimin Li , Zhiping Yin , William Budge
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/477
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/02323 , H01L21/0234 , H01L21/31633 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.5 is formed over the substrate. After forming the carbon comprising dielectric layer, it is exposed to a plasma comprising oxygen effective to reduce the dielectric constant to below what it was prior to said exposing. A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. In a chamber, an interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.5 is plasma enhanced chemical vapor deposited over the substrate at subatmospheric pressure. After forming the carbon comprising dielectric layer, it is exposed to a plasma comprising oxygen at a subatmospheric pressure effective to reduce the dielectric constant by at least 10% below what it was prior to said exposing. The exposing occurs without removing the substrate from the chamber between the depositing and the exposing, and pressure within the chamber is maintained at subatmospheric between the depositing and the exposing.

5. 发明授权

US06828683B2 Semiconductor devices, and semiconductor processing methods 有权
标题翻译：半导体器件和半导体处理方法
公开(公告)号：US06828683B2
公开(公告)日：2004-12-07
申请号：US09219041
申请日：1998-12-23
申请人： Weimin Li , Zhiping Yin
发明人： Weimin Li , Zhiping Yin
IPC分类号： H01L2348
CPC分类号： H01L21/76834 , H01L21/3185 , H01L21/76801 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.
摘要翻译：一方面，本发明包括一种半导体处理方法，其中在半导体衬底上形成导电含铜材料，并且在导电材料附近形成第二材料。在导电材料和第二材料之间形成阻挡层。阻挡层包括具有与氮和有机材料化学键合的硅的化合物。在另一方面，本发明包括包含与氮和有机材料化学键合的硅的物质组合物。氮不与碳结合。另一方面，本发明包括半导体处理方法。提供半导体衬底并且在半导体衬底上形成层。该层包括具有与氮和有机材料化学键合的硅的化合物。

6. 发明授权

US07129180B2 Masking structure having multiple layers including an amorphous carbon layer 有权
公开(公告)号：US07129180B2
公开(公告)日：2006-10-31
申请号：US10661100
申请日：2003-09-12
申请人： Gurtej S. Sandhu , Zhiping Yin , Weimin Li
发明人： Gurtej S. Sandhu , Zhiping Yin , Weimin Li
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3081 , H01L21/0332 , H01L21/31144 , H01L21/32139 , H01L27/10852
摘要： A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide materials. The masking structure may be used as a mask in an etching process during fabrication of semiconductor devices.

7. 发明授权

US07067414B1 Low k interlevel dielectric layer fabrication methods 失效
标题翻译：低k层间介质层制作方法
公开(公告)号：US07067414B1
公开(公告)日：2006-06-27
申请号：US09536037
申请日：2000-03-27
申请人： Weimin Li , Zhiping Yin , William Budge
发明人： Weimin Li , Zhiping Yin , William Budge
IPC分类号： H01L21/31 , H01L21/469 , H01L21/4763
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/02323 , H01L21/0234 , H01L21/31633 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3.5 is formed over the substrate. After forming the dielectric layer, it is exposed to a plasma including oxygen effective to reduce the dielectric constant to below what it was prior to the exposing. A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least patially formed thereon. In a chamber, an inter-level dielectric layer including carbon and having a dielectric constant no greater than 3.5 is plasma-enhanced chemical vapor deposited over the substrate at subatmospheric pressure. After forming the dielectric layer, it is exposed to a plasma including oxygen at subatmospheric pressure effective to reduce the dielectric constant by at least 10% below what it was prior to the exposing. The exposing occurs without removing the substrate from the chamber between the depositing and the exposing, and pressure within the chamber is maintained at subatmospheric pressure between the depositing and the exposing.
摘要翻译：低k层间电介质层制造方法包括提供具有至少部分地形成在其上的集成电路的衬底。包含碳并具有不大于3.5的介电常数的含氧化物的介电层形成在衬底上。在形成电介质层之后，将其暴露于包含氧的等离子体中，以有效地将介电常数降低到暴露前的介电常数。低k级间介电层制造方法包括提供具有至少在其上形成的集成电路的衬底。在室中，包含碳并具有不大于3.5的介电常数的层间电介质层是在低于大气压的压力下沉积在衬底上的等离子体增强的化学气相。在形成电介质层之后，将其暴露于含有低于大气压的氧气的等离子体，以有效地将介电常数降低至比曝光之前低至少10％。在沉积和暴露之间不会从基板移除基板而露出曝光，并且室内的压力保持在沉积和曝光之间的低于大气压的压力。

8. 发明申请

US20060022247A1 Transparent amorphous carbon structure in semiconductor devices 审中-公开
公开(公告)号：US20060022247A1
公开(公告)日：2006-02-02
申请号：US11215614
申请日：2005-08-30
申请人： Zhiping Yin , Weimin Li
发明人： Zhiping Yin , Weimin Li
IPC分类号： H01L29/94 , H01L27/108
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

9. 发明授权

US6156674A Semiconductor processing methods of forming insulative materials 有权
标题翻译：形成绝缘材料的半导体加工方法
公开(公告)号：US6156674A
公开(公告)日：2000-12-05
申请号：US200035
申请日：1998-11-25
申请人： Weimin Li , Zhiping Yin
发明人： Weimin Li , Zhiping Yin
IPC分类号： H01L21/316 , H01L21/469
CPC分类号： H01L21/02126 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02277 , H01L21/31633 , H01L21/31658
摘要： In one aspect, the invention encompasses a semiconductor processing method wherein a first gaseous precursor compound is combined with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen. A layer of the material is formed over a semiconductive substrate. In another aspect, the invention encompasses another semiconductor processing method. Methylsilane is combined with a form of oxygen other than H.sub.2 O.sub.2 to form an insulative compound comprising silicon bound to CH.sub.3 groups and oxygen. A layer of the insulative compound is formed over a semiconductive substrate. In yet another aspect, the invention encompasses yet another semiconductor processing method. Methylsilane is subjected to a plasma treatment to form a layer over a semiconductive substrate, the layer comprises silicon bound to CH.sub.3 groups. The layer is exposed to oxygen to convert the layer to an insulative compound comprising silicon bound to oxygen as well as the CH.sub.3 groups.
摘要翻译：在一个方面，本发明包括半导体加工方法，其中第一气态前体化合物与第二气态前体化合物组合以形成包含碳，硅和氧的材料。一层材料形成在半导体衬底上。在另一方面，本发明包括另一种半导体处理方法。甲基硅烷与除H 2 O 2以外的氧气形式组合以形成包含结合至CH 3基团和氧的硅的绝缘化合物。一层绝缘化合物形成在半导体衬底上。在另一方面，本发明还包括另一种半导体处理方法。对甲基硅烷进行等离子体处理以在半导体基底上形成层，该层包含与CH3基团结合的硅。该层暴露于氧气以将该层转化为包含与氧结合的硅以及CH 3基团的绝缘化合物。

10. 发明授权

US07341957B2 Masking structure having multiple layers including amorphous carbon layer 有权
标题翻译：具有包括无定形碳层的多层的掩模结构
公开(公告)号：US07341957B2
公开(公告)日：2008-03-11
申请号：US11215671
申请日：2005-08-30
申请人： Gurtej S. Sandhu , Zhiping Yin , Weimin Li
发明人： Gurtej S. Sandhu , Zhiping Yin , Weimin Li
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3081 , H01L21/0332 , H01L21/31144 , H01L21/32139 , H01L27/10852
摘要： A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide materials. The masking structure may be used as a mask in an etching process during fabrication of semiconductor devices.
摘要翻译：形成具有多层的掩模结构。掩模结构包括无定形碳层和形成在无定形碳层上的盖层。无定形碳层包括透明无定形碳。盖层包括非氧化物材料。在半导体器件的制造期间，掩模结构可以用作蚀刻工艺中的掩模。

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