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61. 发明授权

US5139922A Method of making resist pattern 失效
标题翻译：抗蚀剂图案制作方法
公开(公告)号：US5139922A
公开(公告)日：1992-08-18
申请号：US602930
申请日：1990-10-25
申请人： Hisashi Watanabe , Yoshihiro Todokoro , Masazumi Hasegawa , Mitsutoshi Fukuda
发明人： Hisashi Watanabe , Yoshihiro Todokoro , Masazumi Hasegawa , Mitsutoshi Fukuda
IPC分类号： G03F7/09 , G03F7/20
CPC分类号： G03F7/7045 , G03F7/094 , Y10S430/143
摘要： A thin film of conductive high molecular compound is formed on a substrate such as Si followed by a heat treatment, and thereafter an electron beam exposure and subsequent development are made, to form pattern of the thin film of conductive high molecular compound; this method can eliminate forming of metal film to prevent the electron charge, can prevent charging of resist in electron-beam exposure or further prevent proximity effect when combined with deep ultraviolet light exposure.
摘要翻译：在Si等基板上形成导电性高分子化合物的薄膜，进行热处理，然后进行电子束曝光和随后的显影，形成导电性高分子化合物的薄膜的图案。该方法可以消除金属膜的形成以防止电子电荷，可以防止电子束曝光中的抗蚀剂充电，或进一步防止与深紫外光照射结合时的接近效应。

62. 发明授权

US5086013A Method for fine patterning 失效
标题翻译：精细图案化方法
公开(公告)号：US5086013A
公开(公告)日：1992-02-04
申请号：US388595
申请日：1989-08-02
申请人： Ryu Shimizu , Shun-ichi Kobayashi
发明人： Ryu Shimizu , Shun-ichi Kobayashi
IPC分类号： G03F7/00 , G03F7/20 , G03F7/26 , H01L21/027 , H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3065
CPC分类号： G03F7/7045 , G03F7/2022 , G03F7/2065 , G03F7/26 , H01L21/0272 , Y10S438/949 , Y10S438/951
摘要： A lift-off method for fine patterning includes the steps of: applying a photoresist layer to a substrate; implanting ions into predetermined regions in a surface layer of the photoresist layer; irradiating the photoresist layer with ultraviolet from above; developing the photoresist layer to form a resist pattern for lift-off; depositing a desired material with a predetermined thickness from above the resist pattern; and removing the resist pattern, thereby lifting off the material on the resist pattern, whereby a fine pattern of the desired material is left on the substrate.
摘要翻译：精细图案化的剥离方法包括以下步骤：将光致抗蚀剂层施加到基底上; 将离子注入到光致抗蚀剂层的表面层中的预定区域中; 从上面用紫外线照射光致抗蚀剂层; 显影光致抗蚀剂层以形成用于剥离的抗蚀剂图案; 从抗蚀剂图案的上方沉积具有预定厚度的所需材料; 并且去除抗蚀剂图案，从而剥离抗蚀剂图案上的材料，由此在基板上留下所需材料的精细图案。

63. 发明授权

US4621371A Method of forming by projection an integrated circuit pattern on a semiconductor wafer 失效
标题翻译：通过在半导体晶片上投影集成电路图案来形成方法
公开(公告)号：US4621371A
公开(公告)日：1986-11-04
申请号：US594731
申请日：1984-03-29
申请人： Mineo Gotou , Shunichi Sano
发明人： Mineo Gotou , Shunichi Sano
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , G21K5/04
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70433 , G03F7/7045 , G03F7/706 , H01J37/3045 , H01J37/3174 , H01J2237/30433
摘要： A method of forming by projection an integrated circuit pattern on a first semiconductor wafer, wherein a plurality of reference marks are projected onto a second semiconductor wafer by the irradiation of radiant rays from a projector apparatus used to form the integrated circuit pattern onto the first semiconductor wafer. The positions of the reference marks projected onto the second semiconductor wafer are measured, thereby measuring the projection distortion peculiar to the projector apparatus. As the next step, a projection mask used to form the integrated circuit pattern is produced with the use of the measured projection distortions which has a distortion opposite that of the projector so as to offset its projection distortion. The mark is mounted in the projector apparatus, and the radiant rays are irradiated onto the mask thus projecting the integrated circuit pattern onto the first semiconductor wafer.
摘要翻译：一种通过将集成电路图案投影在第一半导体晶片上而形成的方法，其中多个参考标记通过从用于形成集成电路图案的投影仪设备的辐射线照射到第一半导体晶片上而投影到第二半导体晶片上晶圆。测量投射到第二半导体晶片上的参考标记的位置，从而测量投影仪设备特有的投影失真。作为下一步骤，通过使用具有与投影仪相反的失真的测量的投影失真来产生用于形成集成电路图案的投影掩模，以抵消其投影失真。标记安装在投影仪设备中，并且将辐射线照射到掩模上，从而将集成电路图案投影到第一半导体晶片上。

64. 发明授权

US3254559A Method op making printed circuit patterns 失效
公开(公告)号：US3254559A
公开(公告)日：1966-06-07
申请号：US3254559D
IPC分类号： G03F7/20 , H05K3/00
CPC分类号： G03F7/7045 , G03F7/70466 , H05K3/0002 , H05K2203/056

65. 发明授权

US10838298B2 Microlithographic fabrication of structures 有权
公开(公告)号：US10838298B2
公开(公告)日：2020-11-17
申请号：US15702175
申请日：2017-09-12
申请人： Molecular Imprints, Inc.
发明人： Vikramjit Singh
IPC分类号： H01L21/302 , G03F7/00 , H01L29/66 , G02B5/18 , G03F7/20 , G03F7/40 , G02B27/01
CPC分类号： G03F7/0005 , G02B5/1857 , G03F7/0002 , G03F7/0037 , G03F7/40 , G03F7/7045 , G02B27/0172 , G02B2027/0118 , G02B2027/0178
摘要： Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.

66. 发明授权

US10054859B2 Real-time variable parameter micro-nano optical field modulation system and interference lithography system 有权
公开(公告)号：US10054859B2
公开(公告)日：2018-08-21
申请号：US15310245
申请日：2016-01-06
申请人： Soochow University
发明人： Yan Ye , Fengchuan Xu , Guojun Wei , Yishen Xu , Donglin Pu , Linsen Chen
IPC分类号： G03F7/20 , G02B27/42 , G02B27/09 , G02B27/00
CPC分类号： G03F7/7045 , G02B19/0095 , G02B27/00 , G02B27/0905 , G02B27/0944 , G02B27/095 , G02B27/0977 , G02B27/0988 , G02B27/4222 , G03F7/70408
摘要： A real-time variable parameter micro-nano optical field modulation system includes a light source, a 4F optical system and a set of light wave modulation optical components. The 4F optical system includes a first optical assembly and a second optical assembly arranged along an optical path in sequence. The light wave modulation optical components are arranged between the first optical assembly and the second optical assembly, and generate optical field distribution with adjustable patterns and structural parameters thereof on a back focal plane of the system by segmented modulation of sub-wavefronts.

67. 发明授权

US09996009B2 Extreme ultraviolet (EUV) exposure system and method of manufacturing semiconductor device using the same 有权
公开(公告)号：US09996009B2
公开(公告)日：2018-06-12
申请号：US15464951
申请日：2017-03-21
申请人： Samsung Electronics Co., Ltd.
发明人： Chang-min Park , Myung-soo Hwang , Ji-sun Lee
IPC分类号： G03B27/54 , G03B27/72 , G03F7/20
CPC分类号： G03F7/70033 , G03F7/7005 , G03F7/7045 , G03F7/70466 , G03F7/70558
摘要： An extreme ultraviolet (EUV) exposure system capable of improving the yield of an EUV exposure process by improving EUV exposure performance, and furthermore, capable of increasing throughput or productivity of the EUV exposure process, the EUV exposure system including an EUV exposure apparatus configured to perform EUV exposure on a wafer disposed on a chuck table, a load-lock chamber combined with the EUV exposure apparatus and configured to supply and discharge the wafer to/from the EUV exposure apparatus, and an ultraviolet (UV) exposure apparatus configured to perform UV exposure by irradiating an entire upper surface of the wafer with a UV light without using a mask.

68. 发明申请

US20180088471A1 PATTERN MANUFACTURING APPARATUS, PATTERN MANUFACTURING METHOD, AND PATTERN MANUFACTURING PROGRAM 审中-公开
公开(公告)号：US20180088471A1
公开(公告)日：2018-03-29
申请号：US15681720
申请日：2017-08-21
申请人： KANTATSU CO., LTD.
发明人： Eiji OSHIMA
IPC分类号： G03F7/20
CPC分类号： G03F7/70791 , G03F7/203 , G03F7/2053 , G03F7/343 , G03F7/38 , G03F7/70191 , G03F7/70208 , G03F7/7045 , G03F7/70541 , H05K2201/09936
摘要： A pattern forming photo-curing layer is heated, thereby enabling quick shaping. A pattern manufacturing apparatus (100) includes a controller (101), a laser projector (102), and a heater (103). The controller (101) controls the laser projector (102) to form a pattern on a pattern forming sheet (130) placed on a stage (140). The laser projector (102) includes an optical engine (121), and the controller (101) controls the laser projector (102) to irradiate the pattern forming sheet (130) with a light beam from the optical engine (121). The heater (103) heats the pattern forming sheet (130).

69. 发明申请

US20180087897A1 PATTERN FORMING SHEET, PATTERN MANUFACTURING APPARATUS, PATTERN MANUFACTURING METHOD, AND PATTERN MANUFACTURING PROGRAM 审中-公开
公开(公告)号：US20180087897A1
公开(公告)日：2018-03-29
申请号：US15681217
申请日：2017-08-18
申请人： KANTATSU CO., LTD.
发明人： Eiji OSHIMA
IPC分类号： G01B11/25 , G03F7/20 , H05K1/02
CPC分类号： G01B11/25 , G03F7/70283 , G03F7/70291 , G03F7/7045 , G03F7/70508 , H05K1/0269 , H05K3/046 , H05K2203/0528 , H05K2203/107
摘要： It is possible to implement pattern formation and pattern manufacturing that eliminate the necessity of high-cost accurate positioning. A pattern manufacturing apparatus (100) includes a controller (101) and a laser projector (102). The controller (101) controls the laser projector (102) to form a pattern on a pattern forming sheet (130) placed on a stage (140). The laser projector (102) further includes an optical engine (121). The optical engine (121) irradiates the pattern forming sheet (130) with a light beam (122). The stage (140) has a hollow structure not to obstruct the optical path of the light beam (122). The pattern forming sheet (130) includes a light-transmitting sheet material layer and a photo-curing layer applied to the sheet material layer.

70. 发明申请

US20180081265A1 MICROLITHOGRAPHIC FABRICATION OF STRUCTURES 审中-公开
公开(公告)号：US20180081265A1
公开(公告)日：2018-03-22
申请号：US15702175
申请日：2017-09-12
申请人： Molecular Imprints, Inc.
发明人： Vikramjit Singh
IPC分类号： G03F7/00 , G02B5/18 , G02B27/01
CPC分类号： G03F7/0005 , G02B5/1857 , G02B27/0172 , G02B2027/0118 , G02B2027/0178 , G03F7/0002 , G03F7/0037 , G03F7/40 , G03F7/7045
摘要： Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.

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