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1. 发明授权

US4621371A Method of forming by projection an integrated circuit pattern on a semiconductor wafer 失效
标题翻译：通过在半导体晶片上投影集成电路图案来形成方法
公开(公告)号：US4621371A
公开(公告)日：1986-11-04
申请号：US594731
申请日：1984-03-29
申请人： Mineo Gotou , Shunichi Sano
发明人： Mineo Gotou , Shunichi Sano
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , G21K5/04
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70433 , G03F7/7045 , G03F7/706 , H01J37/3045 , H01J37/3174 , H01J2237/30433
摘要： A method of forming by projection an integrated circuit pattern on a first semiconductor wafer, wherein a plurality of reference marks are projected onto a second semiconductor wafer by the irradiation of radiant rays from a projector apparatus used to form the integrated circuit pattern onto the first semiconductor wafer. The positions of the reference marks projected onto the second semiconductor wafer are measured, thereby measuring the projection distortion peculiar to the projector apparatus. As the next step, a projection mask used to form the integrated circuit pattern is produced with the use of the measured projection distortions which has a distortion opposite that of the projector so as to offset its projection distortion. The mark is mounted in the projector apparatus, and the radiant rays are irradiated onto the mask thus projecting the integrated circuit pattern onto the first semiconductor wafer.
摘要翻译：一种通过将集成电路图案投影在第一半导体晶片上而形成的方法，其中多个参考标记通过从用于形成集成电路图案的投影仪设备的辐射线照射到第一半导体晶片上而投影到第二半导体晶片上晶圆。测量投射到第二半导体晶片上的参考标记的位置，从而测量投影仪设备特有的投影失真。作为下一步骤，通过使用具有与投影仪相反的失真的测量的投影失真来产生用于形成集成电路图案的投影掩模，以抵消其投影失真。标记安装在投影仪设备中，并且将辐射线照射到掩模上，从而将集成电路图案投影到第一半导体晶片上。

2. 发明授权

US4636968A Method of positioning a beam to a specific portion of a semiconductor wafer 失效
标题翻译：将光束定位到半导体晶片的特定部分的方法
公开(公告)号：US4636968A
公开(公告)日：1987-01-13
申请号：US625545
申请日：1984-06-28
申请人： Mineo Gotou , Hirotsugu Wada
发明人： Mineo Gotou , Hirotsugu Wada
IPC分类号： G03F9/00 , G05D3/12 , H01J37/304 , H01L21/027 , H01L21/30 , G01B11/27 , G01N23/223 , G06F15/60
CPC分类号： H01J37/3045 , H01L21/30
摘要： A method of positioning a beam to a specific portion of a semiconductor wafer is disclosed. In this method, the positions of two positioning marks formed on the wafer are measured. The position of another of the marks is calculated. Then, an actual position of the mark is measured. The calculated position and the actual position are compared with each other. It is judged whether or not the mark satisfies a predetermined condition. When the mark satisfies the predetermined condition, the specific portion of the semiconductor wafer is determined using the actual position of the mark. When it does not satisfy the predetermined condition, the specific area is determined using the position calculated using the positions of the marks around the mark.
摘要翻译：公开了一种将光束定位到半导体晶片的特定部分的方法。在该方法中，测量形成在晶片上的两个定位标记的位置。计算另一个标记的位置。然后，测量标记的实际位置。将计算出的位置和实际位置进行比较。判断标记是否满足预定条件。当标记满足预定条件时，使用标记的实际位置确定半导体晶片的特定部分。当不满足预定条件时，使用使用标记周围的标记的位置计算的位置确定特定面积。

3. 发明授权

US4558225A Target body position measuring method for charged particle beam fine pattern exposure system 失效
标题翻译：带电粒子束精细图案曝光系统的目标体位置测量方法
公开(公告)号：US4558225A
公开(公告)日：1985-12-10
申请号：US527486
申请日：1983-08-29
申请人： Mineo Gotou , Ryoichi Yoshikawa , Toru Tojo , Hirotsugu Wada
发明人： Mineo Gotou , Ryoichi Yoshikawa , Toru Tojo , Hirotsugu Wada
IPC分类号： G01B15/00 , H01J37/304 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： H01J37/3045 , H01L21/30
摘要： Disclosed is a method for measuring the position of a silicon wafer as a workpiece to be exposed. The method is suitably used in an electron beam exposure system. A wafer has a plurality of chip alignment marks which respectively designate a plurality of chip field areas, included in a dicing line area. When the wafer is contained ion a holder and is fixed in the exposure system, edge portions of the wafer are partially scanned with the electron beam to roughly measure the position of the wafer. In accordance with this wafer position data, a wafer surface portion required for detecting only the marks is defined within the dicing line area. In the mark detection with the electron beam, the electron beam irradiates only the defined wafer surface portion of the wafer surface, thereby providing highly precise measurement of the wafer position and avoiding undesirable irritation of the circuit formation area.
摘要翻译：公开了一种用于测量作为待曝光的工件的硅晶片的位置的方法。该方法适用于电子束曝光系统。晶片具有分别指定在切割线区域中的多个芯片场区域的多个芯片对准标记。当晶片被包含在保持器上并固定在曝光系统中时，晶片的边缘部分被电子束部分地扫描以粗略地测量晶片的位置。根据该晶片位置数据，在切割线区域内限定仅检测标记所需的晶片表面部分。在用电子束进行的标记检测中，电子束仅照射晶片表面的限定的晶片表面部分，从而提供对晶片位置的高精度测量，并避免对电路形成区域的不期望的刺激。

4. 发明授权

US4728797A Method for drawing a pattern by charged beam and its apparatus 失效
标题翻译：通过带电束及其装置绘制图案的方法
公开(公告)号：US4728797A
公开(公告)日：1988-03-01
申请号：US943739
申请日：1986-12-19
申请人： Mineo Gotou , Hideo Kusakabe
发明人： Mineo Gotou , Hideo Kusakabe
IPC分类号： H01L21/30 , H01J37/304 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/1536 , H01J2237/20285 , H01J2237/30455 , H01J2237/31766
摘要： The data in a counter in which a tolerable displacement of a table during the drawing in a sub-field and a movement of the table are compared in comparator. When the table movement exceeds a predetermined tolerable displacement preset in circuit for table movement correction, a signal for interrupting the pattern drawing is transferred to a control section. The main deflection position and the correction data for minor deflection distortion are set anew by a computer. Then, drawing of the remaining patterns is restarted.
摘要翻译：在比较器中比较计数器中的数据，其中在子场中的绘制期间的表的可容许位移和表的移动被比较。当台面移动超过用于桌子移动校正的电路中预定的预定容许位移时，用于中断图案绘制的信号被传送到控制部分。计算机重新设定主偏转位置和微小偏转失真的校正数据。然后，重新开始绘制剩余的图案。

5. 发明授权

US4948979A Vacuum device for handling workpieces 失效
标题翻译：用于处理工件的真空装置
公开(公告)号：US4948979A
公开(公告)日：1990-08-14
申请号：US287166
申请日：1988-12-21
申请人： Yasuo Munakata , Mineo Gotou
发明人： Yasuo Munakata , Mineo Gotou
IPC分类号： H01J37/18 , H01J37/20 , H01J37/28 , H01J37/305 , H01J49/24 , H01L21/027
CPC分类号： H01J37/18 , Y10S414/139
摘要： A vacuum device comprises a vacuum working chamber for performing a predetermined process to a material such as substrate and a vacuum prechamber for changing the material. Both the vacuum chambers are coupled by a coupling member so as to communicate the interiors of the respective chambers and the communcation is managed by valve means located for the coupling member. Both vacuum chambers may be constructed so as to be movable or pivotable horizontally with respect to each other. The coupling member may be constructed as an independent member which is inserted between both the vacuum chambers as occasion demands.
摘要翻译：真空装置包括用于对诸如基板的材料进行预定处理的真空工作室和用于改变材料的真空预制室。两个真空室通过联接构件联接，以便连通各个室的内部，并且通过位于联接构件的阀装置来管理通信。两个真空室可以构造成相对于彼此水平地可移动或可枢转。联接构件可以被构造为根据需要插入在两个真空室之间的独立构件。

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