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    • 2. 发明授权
    • Method for producing fine patterns utilizing specific polymeric
diazonium salt, or diazonium salt/sulfone group containing polymer, as
photobleachable agent
    • 使用特定的聚合重氮盐或含重氮盐/砜基的聚合物生产精细图案的方法,作为光可漂白剂
    • US5223376A
    • 1993-06-29
    • US815885
    • 1992-01-06
    • Masazumi HasegawaMasaaki TodokoMitsutoshi Fukuda
    • Masazumi HasegawaMasaaki TodokoMitsutoshi Fukuda
    • G03F7/09
    • G03F7/091
    • A method for producing fine patterns is disclosed, comprising spin-coating a photosensitive resin solution as an upper layer, which comprises a diazonium salt as a photobleachable agent, water and/or an organic solvent, and a polymer, on a photoresist layer as a lower layer and then light-exposing both the upper layer and the lower layer, wherein the polymer in the upper layer has a structural unit shown by formula (I): ##STR1## wherein R.sub.1, R.sub.2, and R.sub.3 each represents a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a halogen atom, or a nitrile group; R.sub.4 represents a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a halogen atom, a hydroxyl group, or a carboxyl group; and X represents a hydrogen atom, an alkali metal, an alkaline earth metal, or an ammonium group.According to another embodiment of this invention, a method for producing fine patterns is disclosed, comprising spin-coating a photosensitive resin solution as an upper layer, which comprises a diazonium salt as a photobleachable agent, water and/or an organic solvent, and a polymer, on a photoresist layer as a lower layer, wherein a counter anion of the diazonium salt is a functional group of the polymer in the photosensitive resin.According to this invention, a light of low contrast can be increased to one of high contrast without requiring complicated steps, and patterns of less than 1 .mu.m can be produced with good precision.
    • 公开了一种生产精细图案的方法,包括在作为上层的光致抗蚀剂层上旋涂作为上光层的感光性树脂溶液,其包含作为光可漂白剂的重氮盐,水和/或有机溶剂和聚合物, 下层,然后对上层和下层进行曝光,其中上层中的聚合物具有式(I)所示的结构单元:其中R 1,R 2和R 3各自表示 氢原子,具有1至4个碳原子的烷基,卤素原子或腈基; R4表示氢原子,具有1至4个碳原子的烷基,卤素原子,羟基或羧基; X表示氢原子,碱金属,碱土金属或铵基。 根据本发明的另一个实施方案,公开了一种制造精细图案的方法,其包括旋涂作为上层的感光性树脂溶液,其包含重氮盐作为光漂白剂,水和/或有机溶剂,以及 聚合物,作为下层的光致抗蚀剂层,其中重氮盐的抗衡阴离子是感光性树脂中的聚合物的官能团。 根据本发明,可以将低对比度的光增加到高对比度之一而不需要复杂的步骤,并且可以以高精度产生小于1μm的图案。
    • 3. 发明授权
    • Method for forming micro-patterns by development
    • 通过开发形成微观图案的方法
    • US4690887A
    • 1987-09-01
    • US800100
    • 1985-11-22
    • Mitsutoshi FukudaMakoto FukutomiOsamu KogureKazunori Miyoshi
    • Mitsutoshi FukudaMakoto FukutomiOsamu KogureKazunori Miyoshi
    • G03F7/26G03F7/016G03F7/038G03F7/32G03C5/00
    • G03F7/038G03F7/325
    • Disclosed is a method for forming micro-patterns on base plates such as for semiconductor integrated circuits, particularly by development, wherein a radiation sensitive negative resist film is formed on the base plate and irradiated according to pattern designs, and the non-irradiated portions of the film is dissolved by a liquid developer comprising a mixture of a good solvent selected from the group of alkyl esters of acetic acid, having an alkyl group containing 1 to 5 carbon atoms, and a poor solvent selected from the group consisting of alicyclic compounds and alkyl ethers of ethyleneglycol having an alkyl group containing 1 to 5 carbon atoms. The method can minimize swelling of irradiated portions of the resist film and can accelerate dissolution of non-irradiated portions of the resist film, so that desired micro-patterns with excellent edge shape quality can be obtained.
    • 公开了一种在半导体集成电路,特别是用于半导体集成电路的基板上形成微图形的方法,其中在基板上形成辐射敏感的负型抗蚀剂膜并根据图案设计照射,并且未照射部分 该膜由液体显影剂溶解,该液体显影剂包括选自乙酸的烷基酯,具有1至5个碳原子的烷基的良溶剂和选自脂环族化合物和 具有1〜5个碳原子的烷基的乙二醇的烷基醚。 该方法可以使抗蚀剂膜的照射部分的溶胀最小化,并且可以加速抗蚀剂膜的未照射部分的溶解,从而可以获得具有优异的边缘形状质量的期望的微图案。