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61. 发明申请

US20060258124A1 Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation 有权
标题翻译：使用接近紫外线辐射的含硅薄膜的低温外延生长
公开(公告)号：US20060258124A1
公开(公告)日：2006-11-16
申请号：US11401578
申请日：2006-04-10
申请人： Kaushal Singh , David Carlson , Manish Hemkar , Satheesh Kuppurao , Randhir Thakur
发明人： Kaushal Singh , David Carlson , Manish Hemkar , Satheesh Kuppurao , Randhir Thakur
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译：一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

62. 发明申请

US20060166431A1 Methods to form electronic devices and methods to form a material over a semiconductive substrate 审中-公开
标题翻译：形成电子器件的方法和在半导体衬底上形成材料的方法
公开(公告)号：US20060166431A1
公开(公告)日：2006-07-27
申请号：US11391650
申请日：2006-03-27
申请人： Randhir Thakur
发明人： Randhir Thakur
IPC分类号： H01L21/8244
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/10852 , H01L28/40
摘要： A first electrode and a doped oxide layer laterally proximate thereof are provided over a substrate. A silicon nitride layer is formed over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode by low pressure chemical vapor deposition using feed gases comprising a silicon hydride, H2 and ammonia. The substrate with silicon nitride layer is exposed to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing. A second electrode is formed over the silicon dioxide layer and the first electrode. In one implementation, the chemical vapor depositing comprises feed gases of a silicon hydride and ammonia, with the depositing comprising increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. and starting feed of the silicon hydride into the reactor at a temperature less than or equal to 600° C. In one implementation the depositing comprises increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. using a temperature ramp rate of at least 10° C./minute from at least 500° C. to at least 600° C. Other aspects and implementations are described.
摘要翻译：第一电极和其侧向附近的掺杂氧化物层设置在衬底上。通过低压化学气相沉积，使用包含氢化硅H 2的进料气体，在掺杂氧化物层和第一电极之上形成氮化硅层至少在第一电极上不大于80埃的厚度和氨。具有氮化硅层的衬底暴露于包括至少700℃的氧化条件，以在氮化硅层上方形成二氧化硅层，掺杂氧化物层上的氮化硅厚度足以将可氧化的衬底材料屏蔽在掺杂的氧化物层在曝光期间被氧化。在二氧化硅层和第一电极上形成第二电极。在一个实施方案中，化学气相沉积包括氢化硅和氨的进料气体，沉积物包括将内部反应器温度从低于500℃增加至高于600℃的最大沉积温度，并将硅氢化物的原料进料反应器的温度低于或等于600℃。在一个实施方案中，沉积包括使内部反应器温度从低于500℃增加至高于600℃的最大沉积温度，使用至少10°的温度升温速率从至少500℃至至少600℃的/分钟。其他方面和实施方式进行了描述。

63. 发明申请

US20060156979A1 Substrate processing apparatus using a batch processing chamber 审中-公开
标题翻译：使用批处理室的基板处理装置
公开(公告)号：US20060156979A1
公开(公告)日：2006-07-20
申请号：US11286063
申请日：2005-11-22
申请人： Randhir Thakur , Steve Ghanayem , Joseph Yudovsky , Aaron Webb , Adam Brailove , Nir Merry , Vinay Shah , Andreas Hegedus
发明人： Randhir Thakur , Steve Ghanayem , Joseph Yudovsky , Aaron Webb , Adam Brailove , Nir Merry , Vinay Shah , Andreas Hegedus
IPC分类号： H01L21/322 , C23C16/00
CPC分类号： H01L21/67109 , C23C16/4412 , C23C16/45546 , C23C16/45593 , C23C16/4584 , C23C16/481 , C23C16/54 , H01L21/67017 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/67745 , H01L21/67757 , H01L21/67781
摘要： Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.
摘要翻译：本发明的方面包括使用适于在一个或多个批次和/或单个基板处理室中处理基板以增加系统吞吐量的多室处理系统（例如，集群工具）来处理基板的方法和装置。在一个实施例中，系统被配置为执行仅包含批处理室的衬底处理序列，或批处理和单个衬底处理室，以优化生产量并且由于暴露于污染环境而最小化处理缺陷。在一个实施例中，批处理室用于通过执行与在集群工具上执行的衬底处理序列中的其他工艺配方步骤相比不成比例地长的工艺配方步骤来增加系统吞吐量。在另一个实施方案中，使用两个或更多个间隔室来处理多个基板，使用处理顺序中的一个或多个不成比例的长处理步骤。本发明的方面还包括用于将前体输送到处理室的装置和方法，使得可以执行可重复的ALD或CVD沉积工艺。

64. 发明申请

US20060018639A1 Processing multilayer semiconductors with multiple heat sources 有权
公开(公告)号：US20060018639A1
公开(公告)日：2006-01-26
申请号：US11187188
申请日：2005-07-22
申请人： Sundar Ramamurthy , Andreas Hegedus , Randhir Thakur
发明人： Sundar Ramamurthy , Andreas Hegedus , Randhir Thakur
IPC分类号： A21B2/00
CPC分类号： H01L21/67103
摘要： A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

65. 发明申请

US20050277272A1 Low temperature epitaxial growth of silicon-containing films using UV radiation 失效
标题翻译：使用紫外线辐射的含硅薄膜的低温外延生长
公开(公告)号：US20050277272A1
公开(公告)日：2005-12-15
申请号：US10866471
申请日：2004-06-10
申请人： Kaushal Singh , David Carlson , Manish Hemkar , Satheesh Kuppurao , Randhir Thakur
发明人： Kaushal Singh , David Carlson , Manish Hemkar , Satheesh Kuppurao , Randhir Thakur
IPC分类号： C30B1/00 , G01R31/26 , H01L21/20 , H01L21/205 , H01L21/36 , H01L21/66
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译：一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

66. 发明申请

US20050161710A1 Capacitor having tantalum oxynitride film and method for making same 失效
公开(公告)号：US20050161710A1
公开(公告)日：2005-07-28
申请号：US11073800
申请日：2005-03-07
申请人： Scott DeBoer , Husam Al-Shareef , Randhir Thakur , Dan Gealy
发明人： Scott DeBoer , Husam Al-Shareef , Randhir Thakur , Dan Gealy
IPC分类号： H01L21/02 , H01L21/316 , H01L21/8242 , H01L31/119
CPC分类号： H01L21/02326 , G11C17/16 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/0234 , H01L21/31604 , H01L21/31637 , H01L23/5252 , H01L27/10852 , H01L27/10861 , H01L27/112 , H01L27/11206 , H01L28/40 , H01L28/65 , H01L28/84 , H01L2924/0002 , H01L2924/00
摘要： A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

67. 发明授权

US06699752B2 Formation of conductive rugged silicon 失效
标题翻译：形成导电坚固的硅
公开(公告)号：US06699752B2
公开(公告)日：2004-03-02
申请号：US10325260
申请日：2002-12-19
申请人： Er-Xuan Ping , Randhir Thakur
发明人： Er-Xuan Ping , Randhir Thakur
IPC分类号： H01L218242
CPC分类号： H01L28/84 , C23C16/24 , C23C16/56 , Y10S438/964
摘要： The present invention provides methods of forming in situ doped rugged silicon and semiconductor devices incorporating conductive rugged silicon. In one aspect, the methods involve forming a layer of amorphous silicon on a substrate at a substantially constant deposition temperature; and converting the layer of amorphous silicon into hemispherical grain silicon by subjecting the layer of amorphous silicon to substantially the deposition temperature while varying pressure.
摘要翻译：本发明提供了形成原位掺杂的坚固硅和掺入导电坚固硅的半导体器件的方法。在一个方面，所述方法包括在基本上恒定的沉积温度下在衬底上形成非晶硅层; 以及通过在改变压力的同时使非晶硅层基本上沉积温度来将非晶硅层转变成半球形晶粒硅。

68. 发明授权

US06291364B1 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
标题翻译：用于稳定半导体器件的高压氧化的方法和装置
公开(公告)号：US06291364B1
公开(公告)日：2001-09-18
申请号：US09386941
申请日：1999-08-31
申请人： F. Daniel Gealy , Dave Chapek , Scott DeBoer , Husam N. Al-Shareef , Randhir Thakur
发明人： F. Daniel Gealy , Dave Chapek , Scott DeBoer , Husam N. Al-Shareef , Randhir Thakur
IPC分类号： H01L2631
CPC分类号： H01L21/28202 , C30B33/005 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31662 , H01L29/518 , Y10S438/903
摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
摘要翻译：公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。该催化剂用于5气压至25气氛N2O和600至750℃温度范围的环境中，这是导致N2O超临界的条件。通过防止N2O变得超临界，可以控制反应，防止温度和压力尖峰。催化剂可以选自贵金属过渡金属及其氧化物。该组可以包括钯，铂，铱，铑，镍，银和金。

69. 发明授权

US06126847A High selectivity etching process for oxides 失效
公开(公告)号：US06126847A
公开(公告)日：2000-10-03
申请号：US977251
申请日：1997-11-24
申请人： Randhir Thakur , James Pan
发明人： Randhir Thakur , James Pan
IPC分类号： H01L21/302 , H01L21/02 , H01L21/205 , H01L21/306 , H01L21/311 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , B44C1/22
CPC分类号： H01L28/40 , H01L21/30604 , H01L21/31111 , H01L21/31116
摘要： A process for etching oxides having differing densities which is not only highly selective, but which also produces uniform etches is provided and includes the steps of providing an oxide layer on a surface of a substrate, exposing the oxide layer to a liquid comprising a halide-containing species, and exposing the oxide layer to a gas phase comprising a halide-containing species. The process desirably is used to selectively etch a substrate surface in which the surface of the substrate includes on a first portion thereof a first silicon oxide and on a second portion thereof a second silicon oxide, with the first silicon oxide being relatively more dense than the second silicon oxide, such as, for example, a process which forms a capacitor storage cell on a semiconductor substrate.

70. 发明授权

US07986871B2 Processing multilayer semiconductors with multiple heat sources 失效
标题翻译：加工具有多个热源的多层半导体
公开(公告)号：US07986871B2
公开(公告)日：2011-07-26
申请号：US12212487
申请日：2008-09-17
申请人： Sundar Ramamurthy , Andreas G. Hegedus , Randhir Thakur
发明人： Sundar Ramamurthy , Andreas G. Hegedus , Randhir Thakur
IPC分类号： A21B2/00
CPC分类号： H01L21/67103
摘要： A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.
摘要翻译：提出了一种在处理室内调节传热特性的方法。可以通过调节设置在处理室中的边缘环的热质量来确定和调整室特性。

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