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    • 1. 发明授权
    • Techniques for forming thin films by implantation with reduced channeling
    • 通过植入减少沟道形成薄膜的技术
    • US08329557B2
    • 2012-12-11
    • US12778989
    • 2010-05-12
    • Adam BrailoveZuqin LiuFrancois J. HenleyAlbert J. Lamm
    • Adam BrailoveZuqin LiuFrancois J. HenleyAlbert J. Lamm
    • H01L21/30
    • H01L31/0392H01L21/67213H01L21/76254H01L31/18Y02E10/50
    • Embodiments of the present invention relate to the use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. Then, a thin film of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. To improve uniformity of depth of implantation, channeling effects are reduced by one or more techniques. In one technique, a miscut bulk substrate is subjected to the implantation, such that the lattice of the substrate is offset at an angle relative to the impinging particle beam. According to another technique, the substrate is tilted at an angle relative to the impinging particle beam. In still another technique, the substrate is subjected to a dithering motion during the implantation. These techniques may be employed alone or in combination.
    • 本发明的实施例涉及使用粒子加速器束从大量衬底形成材料薄膜。 在具体的实施方案中,具有顶表面的本体衬底暴露于加速颗粒束。 然后,通过沿着从光束注入的颗粒形成的切割区域进行受控的切割过程,将薄膜材料与本体基板分离。 为了改善植入深度的均匀性,可以通过一种或多种技术降低沟道效应。 在一种技术中,对杂散块体基板进行注入,使得基板的晶格相对于撞击的粒子束以一定角度偏移。 根据另一种技术,衬底相对于撞击粒子束以一定角度倾斜。 在另一种技术中,衬底在植入期间经历抖动运动。 这些技术可以单独使用或组合使用。
    • 3. 发明申请
    • Race track configuration and method for wafering silicon solar substrates
    • 用于晶圆硅太阳能基板的赛道配置和方法
    • US20100044595A1
    • 2010-02-25
    • US12462210
    • 2009-07-29
    • Francois J. HenleyAdam Brailove
    • Francois J. HenleyAdam Brailove
    • H01J37/08B26D7/18B65H1/00
    • B28D5/0011B28D5/0082H01L21/67213H01L21/67736Y10T83/0467Y10T83/2074
    • A system for manufacturing free-standing films from work pieces. The system includes a racetrack structure being configured to transfer at least one work piece and one or more accelerator-based ion implanters coupled to the racetrack structure via an end station. Each of the accelerator-based ion implanters is configured to introduce particles having an energy of greater than 1 MeV to implant into a surface of the work piece loaded in the end station to form a cleave region in the work piece. The system includes one or more cleave modules coupled to the racetrack structure configured to perform a cleave process to release a free-standing film from the work piece along the cleave region. Additionally, the system includes an output port coupled to each cleave module to output the free standing film detached from the work piece and one or more service modules each connected to the racetrack structure.
    • 用于从工件制造独立薄膜的系统。 该系统包括赛道结构,其配置成经由终端站传送至少一个工件和一个或多个基于加速器的离子注入器,该离子注入器耦合到跑道结构。 基于加速器的离子注入器被配置为引入具有大于1MeV的能量的颗粒,以将其注入到装载在终端站中的工件的表面中,以在工件中形成切割区域。 该系统包括耦合到跑道结构的一个或多个切割模块,其被配置为执行切割过程,以沿着切割区域从工件释放独立的薄膜。 此外,该系统包括一个输出端口,该输出端口连接到每个切割模块,以输出与工件分离的自立式薄膜和一个或多个服务模块,每个服务模块连接到跑道结构。
    • 4. 发明申请
    • TECHNIQUES FOR FORMING THIN FILMS BY IMPLANTATION WITH REDUCED CHANNELING
    • 通过减少通道进行植入形成薄膜的技术
    • US20100317140A1
    • 2010-12-16
    • US12778989
    • 2010-05-12
    • ADAM BRAILOVEZuqin LiuFrancois J. HenleyAlbert J. Lamm
    • ADAM BRAILOVEZuqin LiuFrancois J. HenleyAlbert J. Lamm
    • H01L21/263H01J37/08
    • H01L31/0392H01L21/67213H01L21/76254H01L31/18Y02E10/50
    • Embodiments of the present invention relate to the use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. Then, a thin film of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. To improve uniformity of depth of implantation, channeling effects are reduced by one or more techniques. In one technique, a miscut bulk substrate is subjected to the implantation, such that the lattice of the substrate is offset at an angle relative to the impinging particle beam. According to another technique, the substrate is tilted at an angle relative to the impinging particle beam. In still another technique, the substrate is subjected to a dithering motion during the implantation. These techniques may be employed alone or in combination.
    • 本发明的实施例涉及使用粒子加速器束从大量衬底形成材料薄膜。 在具体的实施方案中,具有顶表面的本体衬底暴露于加速颗粒束。 然后,通过沿着从光束注入的颗粒形成的切割区域进行受控的切割过程,将薄膜材料与本体基板分离。 为了改善植入深度的均匀性,可以通过一种或多种技术降低沟道效应。 在一种技术中,对杂散块体基板进行注入,使得基板的晶格相对于撞击的粒子束以一定角度偏移。 根据另一种技术,衬底相对于撞击粒子束以一定角度倾斜。 在另一种技术中,衬底在植入期间经历抖动运动。 这些技术可以单独使用或组合使用。
    • 6. 发明授权
    • Ion beam mass separation filter, mass separation method thereof and ion source using the same
    • 离子束质量分离过滤器,其质量分离方法和使用其的离子源
    • US06803590B2
    • 2004-10-12
    • US10379065
    • 2003-03-04
    • Adam BrailoveHirohiko Murata
    • Adam BrailoveHirohiko Murata
    • H11J4900
    • H01J49/284
    • A mass separation filter has a first magnet forming a first magnetic field in an orthogonal direction to a beam axis of an ion beam, a second magnet sequentially arranged with the first magnet along the beam axis, parallel with and facing the opposite direction of the first magnet, and forming a second magnetic field orthogonal to the beam axis; and a collimator wall formed within the first and second magnetic fields that forms a transfer channel from a first curved channel deflected from the first magnetic field to a second curved channel deflected by the second magnetic field in a direction the reverse of the first magnetic field. Incident ions pass through a channel inversely curved by the magnetic fields of the first and second magnets according to the mass separation filter, and it is possible to lead ions of a desired mass in the same direction as the beam axis.
    • 质量分离过滤器具有形成与离子束的束轴正交的第一磁场的第一磁体,沿着光束轴线与第一磁体顺序排列的第二磁体,与第一磁体平行并面向第一磁体的相反方向 并形成与光束轴正交的第二磁场; 以及形成在第一和第二磁场内的准直器壁,其形成从第一磁场偏转的第一弯曲通道到由第二磁场偏转的第二弯曲通道在与第一磁场相反的方向上的转移通道。 事件离子通过根据质量分离过滤器由第一和第二磁体的磁场反向弯曲的通道,并且可以将所需质量的离子导引在与光束轴线相同的方向上。