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1. 发明授权

US07579232B1 Method of making a nonvolatile memory device including forming a pillar shaped semiconductor device and a shadow mask 有权
标题翻译：制造包括形成柱状半导体器件和荫罩的非易失性存储器件的方法
公开(公告)号：US07579232B1
公开(公告)日：2009-08-25
申请号：US12216924
申请日：2008-07-11
申请人： Er-Xuan Ping , Randhir Thakur , Klaus Scheugraf
发明人： Er-Xuan Ping , Randhir Thakur , Klaus Scheugraf
IPC分类号： H01L21/8234 , H01L21/8222 , H01L21/425
CPC分类号： H01L27/1021 , H01L21/7688 , H01L27/101
摘要： A method of making a semiconductor device includes forming a pillar shaped semiconductor device surrounded by an insulating layer such that a contact hole in the insulating layer exposes an upper surface of the semiconductor device. The method also includes forming a shadow mask layer over the insulating layer such that a portion of the shadow mask layer overhangs a portion of the contact hole, forming a conductive layer such that a first portion of the conductive layer is located on the upper surface of the semiconductor device exposed in the contact hole and a second portion of the conductive layer is located over the shadow mask layer, and removing the shadow mask layer and the second portion of the conductive layer.
摘要翻译：制造半导体器件的方法包括形成由绝缘层包围的柱状半导体器件，使得绝缘层中的接触孔露出半导体器件的上表面。该方法还包括在绝缘层上形成荫罩层，使得阴影掩模层的一部分悬垂在接触孔的一部分上，形成导电层，使得导电层的第一部分位于暴露在接触孔中的半导体器件和导电层的第二部分位于荫罩层之上，并且去除荫罩层和导电层的第二部分。

2. 发明申请

US20070232031A1 UV assisted low temperature epitaxial growth of silicon-containing films 审中-公开
标题翻译： UV辅助低温外延生长的含硅膜
公开(公告)号：US20070232031A1
公开(公告)日：2007-10-04
申请号：US11805428
申请日：2007-05-22
申请人： Kaushal Singh , David Carlson , Manish Hemkar , Satheesh Kuppurao , Randhir Thakur
发明人： Kaushal Singh , David Carlson , Manish Hemkar , Satheesh Kuppurao , Randhir Thakur
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译：一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

3. 发明申请

US20070087506A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20070087506A1
公开(公告)日：2007-04-19
申请号：US11538765
申请日：2006-10-04
申请人： Randhir Thakur
发明人： Randhir Thakur
IPC分类号： H01L21/336
CPC分类号： H01L21/28211 , H01L21/02046 , H01L21/02049 , H01L21/02052 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02312 , H01L21/02332 , H01L21/02337 , H01L21/28202 , H01L21/3144 , H01L21/31604 , H01L21/31662 , H01L21/31675 , H01L21/76221 , H01L29/40114 , H01L29/518
摘要： In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step after oxidation. In a preferred embodiment, these steps are clustered and transportation between the clustered process chambers takes place in a controlled environment such as nitrogen or a vacuum. In some embodiments, the method provides an oxide layer to be used as part of the device, such as a tunnel oxide for a flash-EEPROM, or as a general gate oxide. Alternatively, the steps can be used to sculpt through oxidation various levels of a substrate, thereby allowing for embedded memory architecture. Cleaning between oxidation steps offers the advantage of providing a more defect-free oxide layer or providing access to a more defect-free level of substrate.

4. 发明授权

US06955996B2 Method for stabilizing high pressure oxidation of a semiconductor device 失效
公开(公告)号：US06955996B2
公开(公告)日：2005-10-18
申请号：US10624817
申请日：2003-07-22
申请人： Daniel F Gealy , Dave Chapek , Scott DeBoer , Husam N. Al-Shareef , Randhir Thakur
发明人： Daniel F Gealy , Dave Chapek , Scott DeBoer , Husam N. Al-Shareef , Randhir Thakur
IPC分类号： C30B33/00 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28202 , C30B33/005 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31662 , H01L29/518 , Y10S438/903
摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

5. 发明授权

US06930015B2 Diffusion-enhanced crystallization of amorphous materials to improve surface roughness 失效
标题翻译：非晶材料的扩散增强结晶提高表面粗糙度
公开(公告)号：US06930015B2
公开(公告)日：2005-08-16
申请号：US10319938
申请日：2002-12-16
申请人： Er-Xuan Ping , Randhir Thakur
发明人： Er-Xuan Ping , Randhir Thakur
IPC分类号： H01L21/00 , H01L21/02 , H01L21/20 , H01L21/8242 , H01L21/84
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/0257 , H01L21/02645 , H01L21/2022 , H01L27/1085 , H01L28/84 , H01L28/90
摘要： Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.
摘要翻译：公开了通过非晶材料的扩散增强结晶形成粗糙表面的方法。在一个方面，可以通过一个或多个非晶硅层的掺杂剂扩散增强结晶来形成导电半球形晶粒硅。为了进一步提高半球形晶粒硅的形成的均匀性，可以在结晶之前将非晶硅的暴露表面接种，以进一步增强在半球形晶粒硅中形成的表面结构的均匀性。

6. 发明授权

US06927169B2 Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing 失效
标题翻译：提高集成器件制造的表面厚度均匀性的方法和装置
公开(公告)号：US06927169B2
公开(公告)日：2005-08-09
申请号：US10325353
申请日：2002-12-19
申请人： Dan Maydan , Randhir Thakur
发明人： Dan Maydan , Randhir Thakur
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L21/84 , H01L21/311
CPC分类号： H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/28247 , H01L21/3144 , H01L21/31662 , H01L21/84
摘要： A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.
摘要翻译：用于以对下层材料例如硅具有平坦化作用的方式形成氧化物的方法和装置。特别地，在下层材料上生长具有不均匀厚度分布的氧化物。根据下层材料的不均匀轮廓选择氧化物的不均匀厚度分布。与预氧化表面相比，随后将氧化物除去在下面的材料的平坦化表面之后。

7. 发明授权

US06511892B1 Diffusion-enhanced crystallization of amorphous materials to improve surface roughness 失效
标题翻译：非晶材料的扩散增强结晶提高表面粗糙度
公开(公告)号：US06511892B1
公开(公告)日：2003-01-28
申请号：US09138879
申请日：1998-08-24
申请人： Er-Xuan Ping , Randhir Thakur
发明人： Er-Xuan Ping , Randhir Thakur
IPC分类号： H01L2120
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/0257 , H01L21/02645 , H01L21/2022 , H01L27/1085 , H01L28/84 , H01L28/90
摘要： Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.
摘要翻译：公开了通过非晶材料的扩散增强结晶形成粗糙表面的方法。在一个方面，可以通过一个或多个非晶硅层的掺杂剂扩散增强结晶来形成导电半球形晶粒硅。为了进一步提高半球形晶粒硅的形成的均匀性，可以在结晶之前将非晶硅的暴露表面接种，以进一步增强在半球形晶粒硅中形成的表面结构的均匀性。

8. 发明授权

US06451661B1 DRAM capacitor formulation using a double-sided electrode 有权
标题翻译： DRAM电容器配方采用双面电极
公开(公告)号：US06451661B1
公开(公告)日：2002-09-17
申请号：US09415213
申请日：1999-10-12
申请人： Scott J. DeBoer , Husam Al-Shareef , Randhir Thakur
发明人： Scott J. DeBoer , Husam Al-Shareef , Randhir Thakur
IPC分类号： H01L2120
CPC分类号： H01L27/10852 , H01L21/31604 , H01L27/10811 , H01L27/10888 , H01L28/55 , H01L28/91
摘要： A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.
摘要翻译：具有用于增强电容的双面电极的电容器。在一个实施例中，双面电极电容器是用于动态随机存取存储器电路中的层叠容器电容器。双面电极优选由导电金属形成，只要金属的氧化物是导电的。双面电极电容器提供具有高存储电容的电容器，其在不增加电池尺寸的情况下为电池提供增加的效率。

9. 发明授权

US06432841B1 Method for forming a dielectric 有权
标题翻译：电介质形成方法
公开(公告)号：US06432841B1
公开(公告)日：2002-08-13
申请号：US09696357
申请日：2000-10-25
申请人： Li Li , Randhir Thakur , Richard C. Hawthorne
发明人： Li Li , Randhir Thakur , Richard C. Hawthorne
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/0217 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/28167 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： A method of forming a selected dielectric that includes the steps of contacting a suitable substrate having a silicon-containing layer with a gas mixture containing atomic nitrogen, nitric oxide and their reactive constituents at a pressure and temperature sufficient for effective dielectric layer formation for the selected dielectric layer.
摘要翻译：一种形成所选择的电介质的方法，其包括以下步骤：使具有含硅层的合适衬底与含有原子氮，一氧化氮及其反应性组分的气体混合物在足以用于所选择的有效介电层形成的压力和温度下接触电介质层。

10. 发明授权

US06399459B2 Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same 有权
标题翻译：用于高介电常数材料的半球形晶粒硅上的双层电极和屏障系统及其制造方法
公开(公告)号：US06399459B2
公开(公告)日：2002-06-04
申请号：US09892594
申请日：2001-06-27
申请人： Husam N. Al-Shareef , Scott DeBoer , Randhir Thakur
发明人： Husam N. Al-Shareef , Scott DeBoer , Randhir Thakur
IPC分类号： H01L2120
CPC分类号： H01L28/84 , H01L27/10814 , H01L28/55
摘要： A high surface area capacitor comprising a double metal layer (an electrode metal and barrier material) deposited on hemispherical grain (HSG) silicon, wherein a high dielectric constant (HDC) material is deposited over the double metal layer. The high surface area capacitor is complete with an upper cell plate electrode deposited over the HDC material. The double metal layer preferably comprises one noble metal, such as platinum or palladium, for the electrode metal and an oxidizable metal, such as ruthenium, iridium, or molybdenum, for the barrier material. The noble metal, such as platinum metal, alone would normally allow oxygen to diffuse into and oxidize any adhesion layer (making the adhesion layer less conductive) and/or undesirably oxidize any silicon-containing material during the deposition of the HDC material. Thus, the barrier metal is used to form a conducting oxide layer or a conducting layer which stops the oxygen diffusion. The HSG polysilicon provides an enhanced surface roughness that boosts cell capacitance. The HDC material, preferably BST or the like, is also used to boost cell capacitance.
摘要翻译：包括沉积在半球形晶粒（HSG）硅上的双金属层（电极金属和阻挡材料）的高表面积电容器，其中在双金属层上沉积高介电常数（HDC）材料。高表面积电容器完成了沉积在HDC材料上的上电池板电极。双金属层优选包含用于电极金属的一种贵金属，例如铂或钯，以及用于阻挡材料的可氧化金属，例如钌，铱或钼。单独的贵金属，例如铂金属，通常会允许氧气在HDC材料的沉积过程中扩散并氧化任何粘附层（使粘合层导电性差）和/或不期望地氧化任何含硅材料。因此，阻挡金属用于形成阻止氧扩散的导电氧化物层或导电层。 HSG多晶硅提供增强的表面粗糙度，提高电池电容。 HDC材料，优选BST等，也用于提高电池电容。

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