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1. 发明申请

US20140065798A1 METHOD AND APPARATUS FOR FORMING GATE STACK ON Si, SiGe or Ge CHANNELS 有权
标题翻译：用于在Si，SiGe或Ge通道上形成栅极堆叠的方法和装置
公开(公告)号：US20140065798A1
公开(公告)日：2014-03-06
申请号：US14016027
申请日：2013-08-30
申请人： Khaled Z. Ahmed , Steven Hung , Kaushal K. Singh , Sundar Ramamurthy
发明人： Khaled Z. Ahmed , Steven Hung , Kaushal K. Singh , Sundar Ramamurthy
IPC分类号： H01L21/30 , H01L21/67
CPC分类号： H01L21/3003 , H01L21/02164 , H01L21/02301 , H01L21/02315 , H01L21/28194 , H01L21/2822 , H01L21/28255 , H01L21/306 , H01L21/6715 , H01L21/67207 , H01L29/66545
摘要： Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium substrates surfaces are functionalized with one or more of sulfur and selenium by plasma processing.
摘要翻译：提供了用于将用作栅极堆叠中的沟道的衬底表面功能化的方法和装置。硅，锗和锗锗衬底表面通过等离子体处理中的一种或多种硫和硒进行功能化。

2. 发明授权

US08608853B2 Thermal reactor with improved gas flow distribution 有权
标题翻译：具有改善气流分布的热反应器
公开(公告)号：US08608853B2
公开(公告)日：2013-12-17
申请号：US13296531
申请日：2011-11-15
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

3. 发明申请

US20120058648A1 THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION 有权
标题翻译：具有改善气体流量分布的热反应器
公开(公告)号：US20120058648A1
公开(公告)日：2012-03-08
申请号：US13296531
申请日：2011-11-15
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： H01L21/26 , H05B3/02
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

4. 发明授权

US08056500B2 Thermal reactor with improved gas flow distribution 有权
标题翻译：具有改善气流分布的热反应器
公开(公告)号：US08056500B2
公开(公告)日：2011-11-15
申请号：US12339671
申请日：2008-12-19
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： B05B5/00
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

5. 发明授权

US06897131B2 Advances in spike anneal processes for ultra shallow junctions 失效
标题翻译：超浅结点尖峰退火工艺的进展
公开(公告)号：US06897131B2
公开(公告)日：2005-05-24
申请号：US10668682
申请日：2003-09-22
申请人： Balasubramanian Ramachandran , Ravi Jallepally , Ryan C. Boas , Sundar Ramamurthy , Amir Al-Bayati , Houda Graoui , Joseph M. Spear
发明人： Balasubramanian Ramachandran , Ravi Jallepally , Ryan C. Boas , Sundar Ramamurthy , Amir Al-Bayati , Houda Graoui , Joseph M. Spear
IPC分类号： H01L21/00 , H01L21/265 , H01L21/268 , H01L21/324 , H01L21/425
CPC分类号： H01L21/324 , H01L21/26513 , H01L21/2686 , H01L21/67109 , H01L21/67115
摘要： Lamp based spike annealing was improved to address the aggressive requirements of
摘要翻译：改进了基于灯的尖峰退火以满足<100nm超浅结点（USJ）技术的积极要求。改进的重点是提高冷却速率，从而提高尖峰锐度。然后将具有不同离子注入能量和剂量的硼离子注入衬底退火以表征尖峰退火的改进。在具有改进的尖峰轮廓退火的基底上实现了薄膜电阻和结深度的大于10％的改善。改进的尖峰退火具有与标准尖峰退火相同的可比均匀性。

6. 发明授权

US08856229B2 System and method for social networking 有权
标题翻译：社交网络的系统和方法
公开(公告)号：US08856229B2
公开(公告)日：2014-10-07
申请号：US12693510
申请日：2010-01-26
申请人： Shyam Sundar Ramamurthy , Manish Satyapal Gupta , Himanshu Verma , Shyam Krishnamurthy , Srinivas Devarakonda
发明人： Shyam Sundar Ramamurthy , Manish Satyapal Gupta , Himanshu Verma , Shyam Krishnamurthy , Srinivas Devarakonda
IPC分类号： G06F15/16
CPC分类号： H04L67/306 , G06Q10/10
摘要： Methods, systems and computer program products are provided for social networking. In one method, a network builder receives a digital object from the user. The digital object contains information associated with the user. The network builder extracts the information associated with the user from the digital object. The network builder further access the strength of relationships between the user and a plurality of other users, each associated with one or more social networks. The relationships strength is extracted based at least in part on the extracted information. The network builder then adds the user to one or more social networks based on the information associated with the user and the strength of the relationships between the user and the plurality of other users.
摘要翻译：为社交网络提供方法，系统和计算机程序产品。在一种方法中，网络构建器从用户接收数字对象。数字对象包含与用户相关联的信息。网络构建器从数字对象提取与用户相关联的信息。网络构建器进一步访问用户与多个其他用户之间的关系的强度，每个与一个或多个社交网络相关联。至少部分地基于所提取的信息提取关系强度。然后，网络构建器基于与用户相关联的信息和用户与多个其他用户之间的关系的强度将用户添加到一个或多个社交网络。

7. 发明授权

US08314369B2 Managing thermal budget in annealing of substrates 有权
标题翻译：管理基板退火中的热预算
公开(公告)号：US08314369B2
公开(公告)日：2012-11-20
申请号：US12212214
申请日：2008-09-17
申请人： Stephen Moffatt , Abhilash J. Mayur , Sundar Ramamurthy , Joseph Ranish , Aaron Hunter
发明人： Stephen Moffatt , Abhilash J. Mayur , Sundar Ramamurthy , Joseph Ranish , Aaron Hunter
IPC分类号： H01L21/26 , F27B5/14 , F27D13/00
CPC分类号： H01L21/67109 , H01L21/67115
摘要： A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.
摘要翻译：提供了一种处理基板的方法和装置。衬底位于热处理室中的支撑件上。电磁辐射被引向衬底以退火衬底的一部分。其他电磁辐射被引向衬底以预热衬底的一部分。预热减少了预热区域和退火区域之间的边界处的热应力。根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度分布。可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

8. 发明申请

US20120222618A1 DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER 审中-公开
标题翻译：双等离子体源，灯加热等离子体室
公开(公告)号：US20120222618A1
公开(公告)日：2012-09-06
申请号：US13193453
申请日：2011-07-28
申请人： Christopher Olsen , Canfeng Lai , Sundar Ramamurthy , Johanes S. Swenberg , Wei Liu
发明人： Christopher Olsen , Canfeng Lai , Sundar Ramamurthy , Johanes S. Swenberg , Wei Liu
IPC分类号： C23C16/50 , C23C16/505 , C23C16/511
CPC分类号： C23C16/517 , H01J37/32082 , H01J37/32357
摘要： Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.
摘要翻译：描述了用于处理半导体衬底的方法和设备。处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开除了基板支撑。支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。

9. 发明申请

US20110250764A1 Method of thermally treating silicon with oxygen 失效
标题翻译：用氧热处理硅的方法
公开(公告)号：US20110250764A1
公开(公告)日：2011-10-13
申请号：US13165502
申请日：2011-06-21
申请人： Yoshitaka Yokota , Sundar Ramamurthy , Vedapuram Achutharaman , Cory Czarnik , Mehran Behdjat , Christopher Olsen
发明人： Yoshitaka Yokota , Sundar Ramamurthy , Vedapuram Achutharaman , Cory Czarnik , Mehran Behdjat , Christopher Olsen
IPC分类号： H01L21/316
CPC分类号： H01L21/67115 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/31658 , H01L21/31662 , H01L21/67109
摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.
摘要翻译：一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。臭氧发生器能够产生至少70％的臭氧流。臭氧通过水冷却的注射器进入室内，其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行，座。

10. 发明授权

US07986871B2 Processing multilayer semiconductors with multiple heat sources 失效
标题翻译：加工具有多个热源的多层半导体
公开(公告)号：US07986871B2
公开(公告)日：2011-07-26
申请号：US12212487
申请日：2008-09-17
申请人： Sundar Ramamurthy , Andreas G. Hegedus , Randhir Thakur
发明人： Sundar Ramamurthy , Andreas G. Hegedus , Randhir Thakur
IPC分类号： A21B2/00
CPC分类号： H01L21/67103
摘要： A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.
摘要翻译：提出了一种在处理室内调节传热特性的方法。可以通过调节设置在处理室中的边缘环的热质量来确定和调整室特性。

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