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    • 63. 发明授权
    • Semiconductor device with self-aligned contact and its manufacture
    • 具有自对准触点的半导体器件及其制造
    • US06620674B1
    • 2003-09-16
    • US09638139
    • 2000-08-15
    • Kazuo ItabashiOsamu TsuboiYuji YokoyamaKenichi InoueKoichi HashimotoWataru Futo
    • Kazuo ItabashiOsamu TsuboiYuji YokoyamaKenichi InoueKoichi HashimotoWataru Futo
    • H01L218242
    • H01L27/10852H01L21/76897H01L27/105H01L27/10805H01L27/10817H01L28/91
    • A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.
    • 一种半导体存储器件,包括:覆盖栅电极的上表面和侧表面的第一绝缘膜; 形成在覆盖所述第一绝缘膜的所述基板上的第二绝缘膜; 形成在所述第二绝缘膜上并到达所述杂质扩散区的一对接触孔; 嵌入在所述接触孔之一中的导电插塞; 第三绝缘膜,形成在覆盖所述导电插塞的所述第二绝缘膜上,并且在所述另一个接触孔上具有第一孔; 形成在第三绝缘膜上并通过第一孔和另一个接触孔连接到另一个杂质扩散区的位线; 覆盖位线的上表面和侧表面的第四绝缘膜; 与覆盖所述位线的侧面的所述第四绝缘膜对准的通过所述第三绝缘膜形成的第二孔; 存储电极,其形成为在所述位线上延伸,通过所述第三和第四绝缘膜与所述位线绝缘,并且通过所述第二孔电连接到所述导电插塞。
    • 64. 发明授权
    • Semiconductor device with perovskite capacitor and its manufacture method
    • 具有钙钛矿电容器的半导体器件及其制造方法
    • US06307228B1
    • 2001-10-23
    • US09357805
    • 1999-07-20
    • Hisashi MiyazawaKenichi InoueTatsuya Yamazaki
    • Hisashi MiyazawaKenichi InoueTatsuya Yamazaki
    • H01L27108
    • H01L28/55
    • A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.
    • 一种制造半导体器件的方法,该半导体器件具有以下步骤:在半导体衬底上形成第一导电类型的绝缘栅场效应晶体管; 在所述半导体衬底上形成第一绝缘膜,所述第一绝缘膜覆盖所述绝缘栅电极; 通过所述第一绝缘膜形成到所述源极/漏极区域中的至少一个的接触窗口; 在接触窗中嵌入金属塞子; 在所述第一绝缘膜上形成具有阻氧功能的第二绝缘膜,所述第二绝缘膜覆盖所述金属插塞; 在所述第二绝缘膜上形成电容器下电极; 在下电极上形成具有钙钛矿晶体结构的电介质氧化物膜; 在含氧气氛中退火半导体衬底; 以及在所述电介质氧化膜上形成电容器上电极。 可以实现具有具有高介电常数的钙钛矿晶体结构的电介质氧化物膜的电容器的半导体器件。
    • 65. 发明授权
    • Method of producing semiconductor device including Schottky barrier
diode incorporating a CVD refractory metal layer
    • 制造包含CVD难熔金属层的肖特基势垒二极管的半导体器件的制造方法
    • US5478764A
    • 1995-12-26
    • US240392
    • 1994-05-10
    • Kenichi Inoue
    • Kenichi Inoue
    • H01L21/329H01L21/768H01L29/47H01L29/872H01L21/265
    • H01L29/66143H01L21/76889H01L29/872Y10S148/139Y10S148/14
    • A method of producing a semiconductor device including a Schottky barrier diode (SBD) comprising the steps of: selectively forming an insulating layer having a first contact hole and a second contact hole, on a (100) silicon semiconductor substrate; selectively forming a polysilicon layer extending from the first contact hole to the second contact hole, the polysilicon layer having a viahole within the first contact hole for selectively exposing the silicon semiconductor substrate; and selectively depositing a refractory metal (tungsten or molybdenum) layer on the polysilicon layer and an exposed portion of the substrate within the viahole by a selective CVD process, so that the SBD is formed between the exposed portion and the metal layer. The refractory metal layer is formed on the silicon of the exposed portion of the substrate and the polysilicon layer and is not formed on the insulating layer, and thus it is unnecessary to perform a photolithography process for patterning the refractory metal layer.
    • 一种制造包括肖特基势垒二极管(SBD)的半导体器件的方法,包括以下步骤:在(100)硅半导体衬底上选择性地形成具有第一接触孔和第二接触孔的绝缘层; 选择性地形成从所述第一接触孔延伸到所述第二接触孔的多晶硅层,所述多晶硅层在所述第一接触孔内具有用于选择性地暴露所述硅半导体衬底的通孔; 以及通过选择性CVD工艺在所述多晶硅层上以及所述通孔内的所述衬底的暴露部分选择性地沉积难熔金属(钨或钼)层,使得所述SBD形成在所述暴露部分和所述金属层之间。 难熔金属层形成在基板的暴露部分和多晶硅层的硅上,并且不形成在绝缘层上,因此不需要进行用于图案化难熔金属层的光刻工艺。
    • 66. 发明授权
    • Developer for silver halide photographic light-sensitive material
    • 用于卤化银照相感光材料的显影剂
    • US5364746A
    • 1994-11-15
    • US216765
    • 1994-03-23
    • Kenichi InoueTsuyoshi Mitsuhashi
    • Kenichi InoueTsuyoshi Mitsuhashi
    • G03C5/305
    • G03C5/305
    • A developer for developing a silver halide photographic material is disclosed. The developer comprises a compound represented by Formula 1 or Formula 2; ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are each a hydrogen atom or an alkyl group having 1 to 3 carbon atoms provided that both of R.sub.1 and R.sub.2 are not hydrogen atoms at the same time; R.sub.5 is a hydroxy group, an amino group or an alkyl group having 1 to 3 carbon atoms; R.sub.6 and R.sub.7 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an acyl group having 1 to 18 carbon atoms or a --COOM.sub.2 group, provided that both of R.sub.1 and R.sub.2 are not hydrogen atoms at the same time, in the above M.sub.1 is a hydrogen atom, an alkali metal atom or an ammonium group; m is an integer 0, 1 or 2; and M.sub.2 is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkali metal atom, an aryl group or an aralkyl group having not more than 15 carbon atoms. Formation of silver sludge in the developer is prevented.
    • 公开了用于开发卤化银照相材料的显影剂。 显影剂包含由式1或式2表示的化合物; (1)其中R1,R2,R3和R4各自为氢原子或具有1至3个碳原子的烷基,条件是R1和R2两者不同于氢原子 时间; R5是羟基,氨基或碳原子数1〜3的烷基; R6和R7各自为氢原子,具有1至5个碳原子的烷基,具有1至18个碳原子的酰基或-COOM 2基团,条件是R1和R2两者同时不是氢原子, 在上述M1中是氢原子,碱金属原子或铵基; m是整数0,1或2; M2为氢原子,碳原子数为1〜4的烷基,碱金属原子,芳基,碳原子数为15以下的芳烷基。 防止在显影剂中形成银污泥。
    • 69. 发明授权
    • Method to raise accuracy of targeting the segmentation for sample distribution
    • 提高样本分配分割的准确性的方法
    • US08321436B2
    • 2012-11-27
    • US10959116
    • 2004-10-07
    • Kenichi InoueAkira TadaYohei TakaboSatoru Watanabe
    • Kenichi InoueAkira TadaYohei TakaboSatoru Watanabe
    • G06F7/00G06F17/30G06Q30/00
    • G06Q30/0224G06F21/6254G06F2221/2129G06Q30/02G06Q30/0226
    • To enhance the targeting accuracy in providing services such as provision of samples for members by performing management of member information and authentication while securing personal anonymity. There is provided a center server and a store terminal. The center server gives a unique ID to a member application, sends it to a particular mobile information terminal and manages it as authentication information about a member who is the user of the mobile information terminal. In response to purchases of a particular article by the member, the store terminal inputs the ID from the mobile information terminal and inputs purchase information about the article the member purchases. The center server then acquires attribute information about a member identified by the ID. Then, by checking the purchase information, the attribute information and service information set in association with attribute information about the member and kinds of articles and stored in particular storage means, information about a service to be provided for the member is identified.
    • 通过在确保个人匿名的同时执行会员信息和身份验证的管理,提高提供服务的定位准确性,例如为会员提供样品。 提供中心服务器和商店终端。 中心服务器为成员应用程序提供唯一的ID,将其发送到特定的移动信息终端,并将其作为关于作为移动信息终端的用户的成员的认证信息进行管理。 响应于成员购买特定文章,商店终端从移动信息终端输入ID并输入关于该会员购买的商品的购买信息。 然后,中心服务器获取关于ID识别的成员的属性信息。 然后,通过检查购买信息,与关于成员的物品和种类的属性信息相关联地设置的存储在特定存储装置中的属性信息和服务信息,识别关于要为会员提供的服务的信息。