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    • 1. 发明授权
    • Semiconductor device with perovskite capacitor and its manufacture method
    • 具有钙钛矿电容器的半导体器件及其制造方法
    • US06307228B1
    • 2001-10-23
    • US09357805
    • 1999-07-20
    • Hisashi MiyazawaKenichi InoueTatsuya Yamazaki
    • Hisashi MiyazawaKenichi InoueTatsuya Yamazaki
    • H01L27108
    • H01L28/55
    • A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.
    • 一种制造半导体器件的方法,该半导体器件具有以下步骤:在半导体衬底上形成第一导电类型的绝缘栅场效应晶体管; 在所述半导体衬底上形成第一绝缘膜,所述第一绝缘膜覆盖所述绝缘栅电极; 通过所述第一绝缘膜形成到所述源极/漏极区域中的至少一个的接触窗口; 在接触窗中嵌入金属塞子; 在所述第一绝缘膜上形成具有阻氧功能的第二绝缘膜,所述第二绝缘膜覆盖所述金属插塞; 在所述第二绝缘膜上形成电容器下电极; 在下电极上形成具有钙钛矿晶体结构的电介质氧化物膜; 在含氧气氛中退火半导体衬底; 以及在所述电介质氧化膜上形成电容器上电极。 可以实现具有具有高介电常数的钙钛矿晶体结构的电介质氧化物膜的电容器的半导体器件。
    • 2. 发明授权
    • Semiconductor device with perovskite capacitor and its manufacture method
    • 具有钙钛矿电容器的半导体器件及其制造方法
    • US5953619A
    • 1999-09-14
    • US40284
    • 1998-03-18
    • Hisashi MiyazawaKenichi InoueTatsuya Yamazaki
    • Hisashi MiyazawaKenichi InoueTatsuya Yamazaki
    • H01L21/8247H01L21/02H01L21/8242H01L21/8246H01L27/10H01L27/105H01L27/108H01L29/788H01L29/792H01L21/20
    • H01L28/55
    • A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate,; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.
    • 一种制造半导体器件的方法,具有以下步骤:在半导体衬底上形成第一导电类型的绝缘栅场效应晶体管; 在所述半导体衬底上形成第一绝缘膜,所述第一绝缘膜覆盖所述绝缘栅电极; 通过所述第一绝缘膜形成到所述源极/漏极区域中的至少一个的接触窗口; 在接触窗中嵌入金属塞子; 在所述第一绝缘膜上形成具有阻氧功能的第二绝缘膜,所述第二绝缘膜覆盖所述金属插塞; 在所述第二绝缘膜上形成电容器下电极; 在下电极上形成具有钙钛矿晶体结构的电介质氧化物膜; 在含氧气氛中退火半导体衬底; 以及在所述电介质氧化膜上形成电容器上电极。 可以实现具有具有高介电常数的钙钛矿晶体结构的电介质氧化物膜的电容器的半导体器件。
    • 3. 发明授权
    • Method for production of semiconductor device
    • 半导体器件的制造方法
    • US6022774A
    • 2000-02-08
    • US014245
    • 1998-01-27
    • Shinichi KawaiTatsuya YamazakiHisashi MiyazawaKeng TanKenichi Goto
    • Shinichi KawaiTatsuya YamazakiHisashi MiyazawaKeng TanKenichi Goto
    • H01L21/8247H01L21/02H01L21/311H01L21/768H01L21/8242H01L21/8246H01L27/10H01L27/105H01L27/108H01L27/115H01L29/788H01L29/792
    • H01L27/11502H01L21/76802H01L27/11585H01L27/1159H01L21/31116H01L21/76895H01L28/40
    • A semiconductor device is produced by a method which comprises forming a conductor pattern in or on a semiconductor layer, covering the surface of the conductor pattern with an antioxidant conductor layer, forming a first insulating layer on the semiconductor layer, forming a lower electrode of a capacitor on the first insulating layer, forming a dielectric layer of an oxygen-containing material on the lower electrode, forming an upper electrode on the dielectric layer, sequentially patterning the upper electrode, the dielectric layer, and the lower electrode in the shape of a capacitor, forming a second insulating layer covering the semiconductor layer, the antioxidant conductor layer, and the capacitor, patterning the second insulating layer thereby simultaneously forming a first opening and a second opening on the upper electrode and the conductor pattern, heating the interiors of the first opening and the second opening and the upper electrode in an oxygen-containing atmosphere, forming a conductor layer overlying the second insulating layer and filling the interiors of the first and second openings, and patterning the conductor layer thereby forming a first wiring connected to the upper electrode through the first opening and a second wiring electrically continuing to the conductor pattern through the second opening.
    • 半导体器件通过以下方法制造:包括在半导体层中或半导体层上形成导体图案,用抗氧化剂导体层覆盖导体图案的表面,在半导体层上形成第一绝缘层,形成下部电极 在第一绝缘层上形成电容器,在下电极上形成含氧材料的电介质层,在电介质层上形成上电极,依次构图上电极,电介质层和下电极,形状为 电容器,形成覆盖半导体层的第二绝缘层,抗氧化剂导体层和电容器,图案化第二绝缘层,从而同时在上电极和导体图案上形成第一开口和第二开口,加热第二绝缘层的内部 第一开口,第二开口和上电极在含氧气氛中 将覆盖在第二绝缘层上的导体层填充并填充第一和第二开口的内部,以及图案化导体层,从而形成通过第一开口连接到上电极的第一布线,以及电连续到导体图案的第二布线 第二个开幕。
    • 5. 发明授权
    • Cylindrical battery and gasket for use in same
    • 圆柱形电池和垫圈用于其中
    • US08673485B2
    • 2014-03-18
    • US13511198
    • 2011-02-18
    • Tatsuya YamazakiShuji MurakamiHidenori Tsuzuki
    • Tatsuya YamazakiShuji MurakamiHidenori Tsuzuki
    • H01M2/08
    • H01M2/0413H01M2/022H01M2/08H01M2/1229
    • A cylindrical battery gasket that will not functionally deteriorate in absorbing stress caused by the gasket extending radially upon the battery being sealed is provided with a boss part with a central hole through which a negative electrode collector is inserted, a canister contact part that is affixed in place and in contact with a cathode canister, a disk-shaped part that is provided to connect the boss part to the canister contact part, and a stress buffering part that is provided on the way to the disk-shaped pat. The stress buffering part has a first bent part and a second bent part, both of an acute angle, and is set nearer the center of the cathode canister than to the positive electrode mixture, upon the gasket being installed in the cathode canister.
    • 在密封电池上径向延伸的衬垫吸收应力不会在功能上恶化的圆柱形电池垫圈设置有具有插入负极集电体的中心孔的凸台部分, 放置并与阴极罐接触,设置用于将凸台部分连接到罐接触部分的盘形部分,以及设置在盘形pat上的应力缓冲部分。 应力缓冲部分具有第一弯曲部分和第二弯曲部分,两者都是锐角,并且在衬垫被安装在阴极罐中时设置成比阴极罐的中心更靠近正极混合物的中心。
    • 6. 发明授权
    • Content reproduction apparatus, status bar display method, and status bar display program
    • 内容再现装置,状态栏显示方法和状态栏显示程序
    • US08644968B2
    • 2014-02-04
    • US12428756
    • 2009-04-23
    • Yoko KitaharaTatsuya YamazakiRyuichiro Noto
    • Yoko KitaharaTatsuya YamazakiRyuichiro Noto
    • G06F17/00
    • G11B19/025G11B27/034G11B27/105G11B27/34
    • A content reproduction apparatus includes: a partial reproduction unit for partially reproducing only a predetermined partial reproduction range in an entire reproduction range of contents before switching to next contents to partially reproduce only a predetermined partial reproduction range in an entire reproduction range of the next contents; a creation unit for creating a status bar by superimposing a partial reproduction range bar indicating the partial reproduction range on an entire reproduction range bar indicating the entire reproduction range; a display unit for displaying a reproduction screen when the partial reproduction is performed by the partial reproduction unit; and a control unit for displaying the status bar as superimposed on the reproduction screen.
    • 内容再现装置包括:部分再现单元,用于在切换到下一个内容之前仅在内容的整个再现范围内仅部分地再现预定的部分再现范围,以在下一个内容的整个再现范围内仅部分再现预定的部分再现范围; 创建单元,用于通过在指示整个再现范围的整个再现范围栏上叠加表示部分再现范围的部分再现范围条来创建状态栏; 显示单元,用于当部分再现单元执行部分再现时显示再现画面; 以及控制单元,用于将状态栏显示为叠加在再现画面上。
    • 7. 发明申请
    • CYLINDRICAL BATTERY AND GASKET FOR USE IN SAME
    • 圆筒电池和垫圈用于同一个
    • US20120231328A1
    • 2012-09-13
    • US13511198
    • 2011-02-18
    • Tatsuya YamazakiShuji MurakamiHidenori Tsuzuki
    • Tatsuya YamazakiShuji MurakamiHidenori Tsuzuki
    • H01M2/08
    • H01M2/0413H01M2/022H01M2/08H01M2/1229
    • A cylindrical battery gasket that will not functionally deteriorate in absorbing stress caused by the gasket extending radially upon the battery being sealed is provided with a boss part (32) with a central hole 31 through which a negative electrode collector 22 is inserted, a canister contact part 33 that is affixed in place and in contact with a cathode canister 11, a disk-shaped part 34 that is provided to connect the boss part 32 to the canister contact part 33, and a stress buffering part 37 that is provided on the way to the disk-shaped part 34. The stress buffering part 37 has a first bent part 37a and a second bent part 37b, both of an acute angle, and is set nearer the center of the cathode canister 11 than to the positive electrode mixture 12, upon the gasket being installed in the cathode canister 11.
    • 在密封电池的径向延伸的衬垫吸收应力中不会在功能上劣化的圆柱形电池垫圈设置有具有中心孔31的凸起部分(32),负极集电体22通过该中心孔31插入,罐接触 固定在适当位置并与阴极筒11接触的部分33,设置用于将凸台部分32连接到罐接触部分33的盘形部分34和设置在该方向上的应力缓冲部分37 应力缓冲部分37具有比正极混合物12更靠近阴极筒11的中心的锐角的第一弯曲部分37a和第二弯曲部分37b 垫圈被安装在阴极罐11中。