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1. 发明授权

US5364746A Developer for silver halide photographic light-sensitive material 失效
标题翻译：用于卤化银照相感光材料的显影剂
公开(公告)号：US5364746A
公开(公告)日：1994-11-15
申请号：US216765
申请日：1994-03-23
申请人： Kenichi Inoue , Tsuyoshi Mitsuhashi
发明人： Kenichi Inoue , Tsuyoshi Mitsuhashi
IPC分类号： G03C5/305
CPC分类号： G03C5/305
摘要： A developer for developing a silver halide photographic material is disclosed. The developer comprises a compound represented by Formula 1 or Formula 2; ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are each a hydrogen atom or an alkyl group having 1 to 3 carbon atoms provided that both of R.sub.1 and R.sub.2 are not hydrogen atoms at the same time; R.sub.5 is a hydroxy group, an amino group or an alkyl group having 1 to 3 carbon atoms; R.sub.6 and R.sub.7 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an acyl group having 1 to 18 carbon atoms or a --COOM.sub.2 group, provided that both of R.sub.1 and R.sub.2 are not hydrogen atoms at the same time, in the above M.sub.1 is a hydrogen atom, an alkali metal atom or an ammonium group; m is an integer 0, 1 or 2; and M.sub.2 is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkali metal atom, an aryl group or an aralkyl group having not more than 15 carbon atoms. Formation of silver sludge in the developer is prevented.
摘要翻译：公开了用于开发卤化银照相材料的显影剂。显影剂包含由式1或式2表示的化合物; （1）其中R1，R2，R3和R4各自为氢原子或具有1至3个碳原子的烷基，条件是R1和R2两者不同于氢原子时间; R5是羟基，氨基或碳原子数1〜3的烷基; R6和R7各自为氢原子，具有1至5个碳原子的烷基，具有1至18个碳原子的酰基或-COOM 2基团，条件是R1和R2两者同时不是氢原子，在上述M1中是氢原子，碱金属原子或铵基; m是整数0,1或2; M2为氢原子，碳原子数为1〜4的烷基，碱金属原子，芳基，碳原子数为15以下的芳烷基。防止在显影剂中形成银污泥。

2. 发明授权

US09165807B2 Substrate treating apparatus with vertical treatment arrangement including vertical blowout and exhaust units 有权
标题翻译：具有立式处理装置的基板处理装置，包括垂直井喷和排气单元
公开(公告)号：US09165807B2
公开(公告)日：2015-10-20
申请号：US13401644
申请日：2012-02-21
申请人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
发明人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
IPC分类号： C23C16/00 , H01L21/67 , B05C13/00 , B05D3/04 , B05B15/12 , H01L23/34
CPC分类号： H01L21/67178 , B05B14/43 , B05B14/44 , B05C13/00 , B05C13/02 , B05D3/0486 , G03F7/26 , H01L21/67017 , H01L21/6715 , H01L21/67173 , H01L21/67184 , H01L21/67196 , H01L21/67201 , H01L21/67225 , H01L23/34 , H01L2924/0002 , Y10S414/135 , H01L2924/00
摘要： A substrate treating apparatus includes a treating block including a plurality of cells arranged one over another. Each cell has treating units for treating substrates and a single main transport mechanism for transporting the substrates to the treating units. Each cell also has a blowout unit for supplying a clean gas into a transporting space of the main transport mechanism and an exhaust unit for exhausting gas from the transporting space. The blowout unit and the exhaust unit are arranged one over the other in the transporting space to separate the transporting space of each cell from that of another cell.
摘要翻译：一种基板处理装置，包括处理块，该处理块包括多个彼此排列的单元。每个电池具有用于处理基板的处理单元和用于将基板输送到处理单元的单个主输送机构。每个电池还具有用于向主输送机构的输送空间供给清洁气体的吹出单元和用于从输送空间排出气体的排气单元。喷出单元和排气单元在传送空间中彼此重叠配置，以将每个单元的传送空间与另一个单元的传送空间分开。

3. 发明申请

US20090142162A1 SUBSTRATE TREATING APPARATUS WITH INTER-UNIT BUFFERS 有权
标题翻译：基板处理装置与单元缓冲器
公开(公告)号：US20090142162A1
公开(公告)日：2009-06-04
申请号：US12324794
申请日：2008-11-26
申请人： Hiroyuki Ogura , Tsuyoshi Mitsuhashi , Yoshiteru Fukutomi , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
发明人： Hiroyuki Ogura , Tsuyoshi Mitsuhashi , Yoshiteru Fukutomi , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
IPC分类号： H01L21/67
CPC分类号： B05C13/00 , H01L21/67196 , H01L21/67201 , H01L21/67225
摘要： The invention provides coating units, heat-treating units, and a first main transport mechanism for transporting substrates to each of these treating units. The substrates are transferred from the first main transport mechanism to a second main transport mechanism through a receiver. When a substrate cannot be placed on the receiver, this substrate is placed on a buffer. Thus, the first main transport mechanism can continue transporting other substrates. The other substrates in the treating units are transported between the treating units without delay, to receive a series of treatments including coating treatment and heat treatment as scheduled. This prevents lowering of the quality of treatment for forming film on the substrates.
摘要翻译：本发明提供涂覆单元，热处理单元和用于将基底输送到这些处理单元中的每一个的第一主输送机构。基板通过接收器从第一主输送机构传送到第二主输送机构。当基板不能放置在接收器上时，将该基板放置在缓冲器上。因此，第一主输送机构可以继续输送其它基板。处理单元中的其它基材在处理单元之间没有延迟地输送，以接收包括涂覆处理和热处理的一系列处理。这防止了在基板上形成膜的处理质量的降低。

4. 发明申请

US20090000543A1 SUBSTRATE TREATING APPARATUS 有权
标题翻译：基板处理装置
公开(公告)号：US20090000543A1
公开(公告)日：2009-01-01
申请号：US12163951
申请日：2008-06-27
申请人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
发明人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
IPC分类号： B05C11/00 , B05C13/00
CPC分类号： H01L21/67178 , B05B14/43 , B05B14/44 , B05C13/00 , B05C13/02 , B05D3/0486 , G03F7/26 , H01L21/67017 , H01L21/6715 , H01L21/67173 , H01L21/67184 , H01L21/67196 , H01L21/67201 , H01L21/67225 , H01L23/34 , H01L2924/0002 , Y10S414/135 , H01L2924/00
摘要： A substrate treating apparatus includes a plurality of substrate treatment lines arranged vertically. Each substrate treatment line has a plurality of main transport mechanisms arranged horizontally, and a plurality of treating units provided for each main transport mechanism for treating substrates. A series of treatments is carried out for the substrates, with each main transport mechanism transporting the substrates to the treating units associated therewith, and transferring the substrates to the other main transport mechanism horizontally adjacent thereto. The substrate treating apparatus realizes increased processing capabilities by treating the substrates in parallel through the substrate treatment lines.
摘要翻译：基板处理装置包括垂直布置的多个基板处理线。每个基板处理线具有水平布置的多个主传送机构，以及为每个用于处理基板的主传送机构设置的多个处理单元。对于基板进行一系列处理，每个主传送机构将基板传送到与其相关联的处理单元，并将基板传送到与其水平相邻的另一主传送机构。基板处理装置通过基板处理线平行地处理基板来实现增加的处理能力。

5. 发明授权

US09299596B2 Substrate treating apparatus with parallel substrate treatment lines simultaneously treating a plurality of substrates 有权
标题翻译：具有平行基板处理线的基板处理装置同时处理多个基板
公开(公告)号：US09299596B2
公开(公告)日：2016-03-29
申请号：US12343292
申请日：2008-12-23
申请人： Hiroyuki Ogura , Tsuyoshi Mitsuhashi , Yoshiteru Fukutomi , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
发明人： Hiroyuki Ogura , Tsuyoshi Mitsuhashi , Yoshiteru Fukutomi , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
IPC分类号： B05C13/02 , H01L21/677 , H01L21/67 , C23C16/00
CPC分类号： H01L21/67225 , B05C9/12 , B05C9/14 , B05C13/00 , B05C13/02 , H01L21/6715 , H01L21/67173 , H01L21/67178 , H01L21/67196 , H01L21/67276 , H01L21/67742
摘要： A substrate treating apparatus for treating substrates includes a plurality of substrate treatment lines arranged vertically for carrying out plural types of treatment on the substrates while transporting the substrates substantially horizontally, and a controller for changing processes of treatment carried out on the substrates for each of the substrate treatment lines. By changing the processes of treatment carried out for the substrates for each substrate treatment line, the processes of treatment carried out for the substrates can be changed for each substrate conveniently. Thus, a plurality of different processes of treatment corresponding to the number of substrate treatment lines can be carried out in parallel for the respective substrates.
摘要翻译：用于处理基板的基板处理装置包括：垂直布置的多个基板处理线，用于在基板上大致水平地输送基板的同时在基板上进行多种处理;以及控制器，用于改变对基板的处理底物处理线。通过改变对于每个基板处理线的基板的处理过程，可以方便地对每个基板改变对基板进行的处理的处理。因此，对于各个基板，可以并行地执行与基板处理线的数量相对应的多个不同的处理处理。

6. 发明授权

US09230834B2 Substrate treating apparatus 有权
标题翻译：底物处理装置
公开(公告)号：US09230834B2
公开(公告)日：2016-01-05
申请号：US13401617
申请日：2012-02-21
申请人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
发明人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
IPC分类号： B05D3/12 , H01L21/677 , H01L21/67 , B05C13/00 , B05D3/04 , B05B15/12 , H01L23/34
CPC分类号： H01L21/67178 , B05B14/43 , B05B14/44 , B05C13/00 , B05C13/02 , B05D3/0486 , G03F7/26 , H01L21/67017 , H01L21/6715 , H01L21/67173 , H01L21/67184 , H01L21/67196 , H01L21/67201 , H01L21/67225 , H01L23/34 , H01L2924/0002 , Y10S414/135 , H01L2924/00
摘要： A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.
摘要翻译：用具有分度器部分，处理部分和界面部分的基板处理装置处理基板的基板处理方法包括在设置在处理部分中的多个故事层并行地进行抗蚀剂膜形成处理，并且在在治疗部分设置多个故事。

7. 发明申请

US20120156380A1 SUBSTRATE TREATING APPARATUS 有权
标题翻译：基板处理装置
公开(公告)号：US20120156380A1
公开(公告)日：2012-06-21
申请号：US13401617
申请日：2012-02-21
申请人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
发明人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
IPC分类号： B05D3/02 , B05D3/00
CPC分类号： H01L21/67178 , B05B14/43 , B05B14/44 , B05C13/00 , B05C13/02 , B05D3/0486 , G03F7/26 , H01L21/67017 , H01L21/6715 , H01L21/67173 , H01L21/67184 , H01L21/67196 , H01L21/67201 , H01L21/67225 , H01L23/34 , H01L2924/0002 , Y10S414/135 , H01L2924/00
摘要： A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.
摘要翻译：用具有分度器部分，处理部分和界面部分的基板处理装置处理基板的基板处理方法包括在设置在处理部分中的多个故事层并行地进行抗蚀剂膜形成处理，并且在在治疗部分设置多个故事。

8. 发明申请

US20120145074A1 SUBSTRATE TREATING APPARATUS 有权
标题翻译：基板处理装置
公开(公告)号：US20120145074A1
公开(公告)日：2012-06-14
申请号：US13401644
申请日：2012-02-21
申请人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
发明人： Yoshiteru Fukutomi , Tsuyoshi Mitsuhashi , Hiroyuki Ogura , Kenya Morinishi , Yasuo Kawamatsu , Hiromichi Nagashima
IPC分类号： B05C13/02
CPC分类号： H01L21/67178 , B05B14/43 , B05B14/44 , B05C13/00 , B05C13/02 , B05D3/0486 , G03F7/26 , H01L21/67017 , H01L21/6715 , H01L21/67173 , H01L21/67184 , H01L21/67196 , H01L21/67201 , H01L21/67225 , H01L23/34 , H01L2924/0002 , Y10S414/135 , H01L2924/00
摘要： A substrate treating apparatus includes a treating block including a plurality of cells arranged one over another. Each cell has treating units for treating substrates and a single main transport mechanism for transporting the substrates to the treating units. Each cell also has a blowout unit for supplying a clean gas into a transporting space of the main transport mechanism and an exhaust unit for exhausting gas from the transporting space. The blowout unit and the exhaust unit are arranged one over the other in the transporting space to separate the transporting space of each cell from that of another cell.
摘要翻译：一种基板处理装置，包括处理块，该处理块包括多个彼此排列的单元。每个电池具有用于处理基板的处理单元和用于将基板输送到处理单元的单个主输送机构。每个电池还具有用于向主输送机构的输送空间供给清洁气体的吹出单元和用于从输送空间排出气体的排气单元。喷出单元和排气单元在传送空间中彼此重叠配置，以将每个单元的传送空间与另一个单元的传送空间分开。

9. 发明申请

US20100136257A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20100136257A1
公开(公告)日：2010-06-03
申请号：US12698862
申请日：2010-02-02
申请人： Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
发明人： Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kazuhito Shigemori , Toru Asano , Yukio Toriyama , Takashi Taguchi , Tsuyoshi Mitsuhashi , Tsuyoshi Okumura
IPC分类号： B05D3/06
CPC分类号： G03F7/30 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67178 , H01L21/67225
摘要： A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device and includes first, second and third processing units, includes forming a photosensitive film on the substrate by said first processing unit before exposure processing by said exposure device and applying washing processing to the substrate by supplying a washing liquid to the substrate in said second processing unit after the formation of said photosensitive film and before the exposure processing. The method also includes applying drying processing to the substrate in said second processing unit after the washing processing by said second processing unit and before the exposure processing and applying development processing to the substrate by said third processing unit after the exposure processing. Applying the drying processing to the substrate includes the step of supplying an inert gas onto the substrate, to which the washing liquid is supplied.
摘要翻译：一种在与曝光装置相邻并且包括第一，第二和第三处理单元的基板处理装置中处理基板的方法，包括在所述曝光装置的曝光处理之前由所述第一处理单元在所述基板上形成感光膜，以及在形成所述感光膜之后并且在所述曝光处理之前，通过在所述第二处理单元中向所述基板供应洗涤液体来向所述基板施加洗涤处理。该方法还包括在所述第二处理单元的洗涤处理之后并且在曝光处理之前对所述第二处理单元中的基板进行干燥处理，并且在曝光处理之后，通过所述第三处理单元对基板进行显影处理。将干燥处理应用于基板包括向供给洗涤液的基板供给惰性气体的工序。

10. 发明授权

US07105074B2 Substrate treating method and apparatus 有权
公开(公告)号：US07105074B2
公开(公告)日：2006-09-12
申请号：US10202279
申请日：2002-07-22
申请人： Osamu Tamada , Tsuyoshi Mitsuhashi , Minobu Matsunaga , Katsushi Yoshioka , Kenji Sugimoto , Kaoru Aoki , Moritaka Yano , Satoshi Yamamoto , Masakazu Sanada , Takashi Nagao , Mitsumasa Kodama
发明人： Osamu Tamada , Tsuyoshi Mitsuhashi , Minobu Matsunaga , Katsushi Yoshioka , Kenji Sugimoto , Kaoru Aoki , Moritaka Yano , Satoshi Yamamoto , Masakazu Sanada , Takashi Nagao , Mitsumasa Kodama
IPC分类号： B05B3/00 , B08B3/00
CPC分类号： H01L21/6715 , H01L21/31133
摘要： A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

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