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61. 发明授权

US5455419A Micromechanical sensor and sensor fabrication process 失效
标题翻译：微机械传感器和传感器制造工艺
公开(公告)号：US5455419A
公开(公告)日：1995-10-03
申请号：US189221
申请日：1994-01-31
申请人： Thomas Bayer , Johann Greschner
发明人： Thomas Bayer , Johann Greschner
IPC分类号： G01Q70/10 , B44C1/22 , B81C1/00 , C03C15/00 , C23F4/00 , G01B7/34 , G01B21/30 , G01Q60/04 , G01Q60/08 , G01Q60/16 , G01Q60/38 , G01Q70/16 , H01J9/14 , H01J37/00 , H01J37/28 , H01L21/306
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/04 , G01Q60/08 , G01Q60/16 , Y10S977/878
摘要： A method for producing micromechanical sensors for the AFM/STM/MFM profilometry is described in which a multiple step mask of cantilever beam and tip is transferred step by step into the wafer substrate by reactive ion etching. A particular highly anisotropic etching step is used for etching and shaping of the tip. This process step uses an Ar/Cl2 ambient at a pressure of about 100 .sup.6 bar and a self bias voltage of about 300 V DC. The ratio of pressure to self bias voltage determines the concave shape of the tip side- walls. This etching step is followed by a thermal oxidation step. The oxidation is carried out for a time until the oxidation fronts at the thinnest point of the tip shaft touch each other. A stripping process with buffered hydrofluoric acid gently removes the thermally grown oxide. The oxidation process allows--via oxidation time--a modification of tip height and angle in an extremely controllable manner. To prevent sticking of the tip to the structure to be profiled the ratio of tip diameter to tip height should be about 1:10. Should this ratio be exceeded the tip has to be arranged on a pedestal. The structure, comprising a cantilever beam and a tip on pedestal, can be produced with the same but slightly modified process of the invention.
摘要翻译：描述了用于AFM / STM / MFM轮廓测量法的微机械传感器的制造方法，其中悬臂梁和尖端的多步骤掩模通过反应离子蚀刻逐步转移到晶片衬底中。特别是高度各向异性的蚀刻步骤用于尖端的蚀刻和成型。该工艺步骤在约100 6bar的压力和约300V DC的自偏压下使用Ar / Cl2环境。压力与自偏压的比率决定了顶端侧壁的凹形。该蚀刻步骤之后是热氧化步骤。氧化进行一段时间，直到尖端轴的最薄点处的氧化前沿相互接触。用缓冲氢氟酸的汽提过程轻轻地除去热生长的氧化物。氧化过程允许通过氧化时间 - 以极其可控的方式改变尖端高度和角度。为了防止尖端粘附到待成型的结构上，尖端直径与尖端高度的比率应为约1:10。如果超过该比率，则必须将尖端布置在基座上。包括悬臂梁和基座上的尖端的结构可以用本发明的相同但略微改进的方法制造。

62. 发明授权

US5427599A System for stamping an optical storage disk 失效
标题翻译：用于冲压光存储盘的系统
公开(公告)号：US5427599A
公开(公告)日：1995-06-27
申请号：US180183
申请日：1994-01-11
申请人： Johann Greschner , Gerhard Schmid , Werner Steiner , Gerhard Trippel , Olaf Wolter
发明人： Johann Greschner , Gerhard Schmid , Werner Steiner , Gerhard Trippel , Olaf Wolter
IPC分类号： B29D17/00 , G11B7/24 , G11B7/253 , G11B7/26 , C03B11/00 , C03B11/06
CPC分类号： C03B11/082 , B29D17/005 , C03B11/084 , C03B11/086 , C03B11/12 , C03B11/122 , C03B11/125 , C03B23/0013 , G11B7/26 , C03B2215/05 , C03B2215/06 , C03B2215/24 , C03B2215/412 , C03B2215/44 , C03B2215/45
摘要： An optical storage disk consists of a glass substrate (1) into which guide tracks (3) for servo-controlling the focussed light beams are directly stamped by a hot stamp process. After stamping, the glass substrate is thermally quenched in the stamping device to increase its breaking resistance through thermal curing. In order to achieve uniform guide tracks over the entire surface of an optical storage disk, flexible stamp stencils (35) in a flexible holder (34) are used whose curvature can be changed by applying hydro-static pressure. Suitable stamp stencils consist of monocristalline silicon disks with surface hardening, or of metal disks, structured in photolithographic processes. The stamp lands are made with bevelled edges to facilitate the separating of stamp and glass substrate after cooling.
摘要翻译：光学存储盘由玻璃基板（1）组成，用于伺服控制聚焦光束的引导轨道（3）通过热压印工艺直接冲压到其中。冲压后，将玻璃基板在冲压装置中进行热淬火，以通过热固化提高其抗断裂性。为了在光学存储盘的整个表面上实现均匀的导轨，使用柔性保持器（34）中的柔性印模模版（35），其曲率可以通过施加静水压力而改变。合适的印模模具由具有表面硬化的单晶硅硅片或由光刻工艺构成的金属盘组成。印章土地由倾斜的边缘制成，以便在冷却后分隔印模和玻璃基板。

63. 发明授权

US5304278A Apparatus for plasma or reactive ion etching and method of etching substrates having a low thermal conductivity 失效
标题翻译：用于等离子体或反应离子蚀刻的装置以及蚀刻具有低热导率的基板的方法
公开(公告)号：US5304278A
公开(公告)日：1994-04-19
申请号：US935661
申请日：1992-08-24
申请人： Johann Bartha , Thomas Bayer , Johann Greschner , Dieter Kern , Volker Mattern , Roland Stoehr
发明人： Johann Bartha , Thomas Bayer , Johann Greschner , Dieter Kern , Volker Mattern , Roland Stoehr
IPC分类号： C08J7/00 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , B05C1/00
CPC分类号： H01L21/67069
摘要： Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a predetermined spacing from the cathode to which RF energy is applied. According to a preferred embodiment of the invention, the cathode is raised in the area of the substrate to be etched to within a spacing of about 0.2 mm from the bottom side of the substrate. The cathode is made of aluminium, and is provided in the area of the substrate to be etched with a layer which acts as a black radiator. The heat formed during RIE is removed by radiation, and the radiation reflected from the cathode to the substrate is absorbed by the layer. Also disclosed is a method of etching substrates having a low thermal conductivity, in particular plastic substrates.
摘要翻译：公开了一种真空反应器，用于蚀刻具有低热蚀性的基板以达到高的蚀刻速度均匀性，其中待蚀刻的基板以与施加有RF能量的阴极预定的间隔布置在保持器中。根据本发明的优选实施例，阴极在待蚀刻的基底的区域中升高到与基底的底侧约0.2mm的间隔。阴极由铝制成，并且设置在用作黑色散热器的层的被蚀刻基板的区域中。在RIE期间形成的热量被辐射除去，从阴极反射到衬底的辐射被层吸收。还公开了一种蚀刻具有低热导率的衬底，特别是塑料衬底的方法。

64. 发明授权

US5283107A Modular multilayer interwiring structure 失效
标题翻译：模块化多层互连结构
公开(公告)号：US5283107A
公开(公告)日：1994-02-01
申请号：US878098
申请日：1992-05-04
申请人： Thomas Bayer , Johann Greschner , Willy Hildenbrand , Bernd Marquart , Roland R. Stohr , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Willy Hildenbrand , Bernd Marquart , Roland R. Stohr , Olaf Wolter
IPC分类号： H01L23/12 , H01L23/473 , H01L23/538 , H01L25/065 , H05K3/46 , B32B9/00
CPC分类号： H01L23/5383 , H01L23/473 , H01L23/5384 , H01L25/0655 , H01L2924/0002 , H01L2924/09701 , H01L2924/15312 , Y10S428/901 , Y10T428/24917 , Y10T428/24926
摘要： A modular multilayer interwiring structure comprising a plurality of relatively small parts which are produced separately as `sub-units` (1). Each individual layer of the final structure is formed by joining a respective set of unit parts in one plane. The whole multilayer structure is then built by stacking these layers, preferably so that the units of one layer are not vertically aligned with the units of an adjacent layer. Each unit part includes at least one layer of conductive material (8, 9) on its front and/or rearside. These conductive layers may be individually patterned into diverse interconnection lines (5). Throughconnections (6) extending from the frontside to the backside of the units are provided using a desired set or a standardized array of via holes or openings filled with conductive material. By connecting desired throughconnections to the respective conduction lines, each unit may form an individual part of a more complex multilayer interwiring structure.
摘要翻译：一种模块化多层互连结构，包括多个相对较小的部分，它们分别制造为“子单元”（1）。最终结构的每个单独的层通过在一个平面中连接相应的单元部件组而形成。然后通过堆叠这些层来构建整个多层结构，优选地使得一层的单元不与相邻层的单元垂直对准。每个单元部分在其前部和/或后部包括至少一层导电材料（8,9）。这些导电层可以单独地构图成不同的互连线（5）。通过使用填充有导电材料的通孔或开口的期望的集合或标准化阵列来提供从单元的前侧延伸到后侧的直通连接（6）。通过将期望的连接件连接到相应的导线，每个单元可以形成更复杂的多层互连结构的单独部分。

65. 发明授权

US4918033A PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides 失效
标题翻译： PECVD（等离子体增强化学气相沉积）方法，用于通过原位形成氟化钨沉积钨或钨层
公开(公告)号：US4918033A
公开(公告)日：1990-04-17
申请号：US239569
申请日：1988-09-01
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
IPC分类号： C23C16/08 , C23C16/30 , C23C16/448 , C23C16/50 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4488 , C23C16/08 , H01L21/28556 , Y10S148/147
摘要： The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers.In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.

66. 发明授权

US4843315A Contact probe arrangement for electrically connecting a test system to the contact pads of a device to be tested 失效
标题翻译：用于将测试系统电连接到待测试设备的接触垫的接触探针布置
公开(公告)号：US4843315A
公开(公告)日：1989-06-27
申请号：US167676
申请日：1988-03-14
申请人： Thomas Bayer , Michael Elsasser , Johann Greschner , Heinrich Schmid , Roland Stohr , Olaf Wolter , Jurgen Wittlinger
发明人： Thomas Bayer , Michael Elsasser , Johann Greschner , Heinrich Schmid , Roland Stohr , Olaf Wolter , Jurgen Wittlinger
IPC分类号： G01R31/26 , G01R1/073 , G01R31/28
CPC分类号： G01R1/07357
摘要： The contact probe arrangement includes a stack of perforated plates (1, 1a) through which extend a plurality contact probes. The stack of perforated plates consists of two kinds of plates. The first kind forms the lowermost plates (1a). They have circular or square holes permitting a vertical placing of the contact probes onto the contact pads (4) of the device (5) to be tested. The plates (1) of the second kind have oblong, rectangular, square, circular, elliptical or trapezoidal holes (3). With respect to the stacked plates of the second kind, alternate ones are offset against the two other adjacent plates which are aligned relative to each other, in such a manner that each contact probe is surrounded by part of the lower edge of the upper of two adjacent perforated plates, and part of the upper edge of the lower of two adjacent perforated plates. If axial stress is applied, the contact probe can thus not buckle any farther than to a part of the perforation wall limiting its maximum buckling. This ensures a sufficiently low contact resistance between the contact probe and the contact pad of the device to be tested. By using a corresponding number of perforated plates of the second kind the contact probes can adapt to height differences of the contact pads caused by irregularities in the surface of the device to be tested.
摘要翻译：接触探针装置包括多个多孔板（1,1a）的堆叠，通过该堆叠多个多孔板延伸多个接触探针。多孔板堆叠由两种板组成。第一种形成最下面的板（1a）。它们具有允许将接触探针垂直放置在待测试装置（5）的接触垫（4）上的圆形或方形孔。第二类的板（1）具有长方形，矩形，正方形，圆形，椭圆形或梯形孔（3）。对于第二类的堆叠板，替代物相对于彼此对准的另外两个相邻的板偏移，使得每个接触探针被两个上部的下边缘的一部分包围相邻的穿孔板和两个相邻多孔板的下部的上边缘的一部分。如果施加轴向应力，则接触探针因此可能不会比限制其最大屈曲的穿孔壁的一部分更加弯曲。这确保接触探针和待测试装置的接触垫之间的接触电阻足够低。通过使用相应数量的第二种多孔板，接触探针可以适应由待测试装置的表面中的不规则引起的接触垫的高度差异。

67. 发明授权

US4520314A Probe head arrangement for conductor line testing with at least one probe head comprising a plurality of resilient contacts 失效
标题翻译：用于具有至少一个包括多个弹性触点的探针头的导线测试的探针头布置
公开(公告)号：US4520314A
公开(公告)日：1985-05-28
申请号：US433341
申请日：1982-10-08
申请人： Karl Asch , Johann Greschner , Michael Kallmeyer , Werner Kulcke
发明人： Karl Asch , Johann Greschner , Michael Kallmeyer , Werner Kulcke
IPC分类号： G01R1/06 , G01R1/073 , G01R31/02
CPC分类号： G01R1/073 , G01R1/07307 , G01R1/07357
摘要： A probe head arrangement for contacting a plurality of closely adjacent conductor lines 2 comprises a minimum of one probe head 3, where a plurality of fingers 4 together with a back 5 are made in one piece of monocrystalline silicon in semiconductor technique. A plurality of such probe heads 3 are composed to form a tester. At the beginning of each test it is determined which fingers 4 are to be, and are not to be placed onto the individual conductor lines 2 of a card 1 to be tested. Subsequently, the short and interruption tests can be implemented after the correlation of finger and probe head addresses with the conductor line addresses.
摘要翻译：用于接触多个紧密相邻的导体线2的探针头布置包括至少一个探针头3，其中在半导体技术中多个指状物4与背面5一起制成单片硅。多个这样的探头3被构成以形成测试器。在每个测试开始时，确定哪个手指4将要被放置在被测试的卡1的各个导线2上。随后，可以在手指和探针头地址与导体线地址相关之后实现短路和中断测试。

68. 发明授权

US4426584A Method of compensating the proximity effect in electron beam projection systems 失效
标题翻译：补偿电子束投影系统中邻近效应的方法
公开(公告)号：US4426584A
公开(公告)日：1984-01-17
申请号：US270086
申请日：1981-06-03
申请人： Harald Bohlen , Helmut Engelke , Johann Greschner , Peter Nehmiz
发明人： Harald Bohlen , Helmut Engelke , Johann Greschner , Peter Nehmiz
IPC分类号： H01L21/027 , H01J37/317 , H01J3/26
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31769
摘要： For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, a specific mask with corresponding correction openings can be used which is applied with the same, or with a different electron beam intensity. In a particularly advantageous manner the correction of the proximity effect can be achieved when complementary masks are used; the correction openings for the partial areas of the one complementary mask are arranged in the other complementary mask. The proximity effect is then corrected without an additional exposure step. For measuring the proximity effect a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process of the photoresist is discontinued prematurely. The ridge edges which in the presence of the proximity effect are asymmetrical can be easily detected under the microscope.
摘要翻译：为了补偿通过改变图案几何影响电子束光刻的光致抗蚀剂（邻近效应）中的电子的散射损失，建议在第二曝光步骤中将图案的所选部分区域暴露于另外的照射剂量。为此，可以使用具有相应校正开口的特定掩模，其应用相同或具有不同的电子束强度。在特别有利的方式中，当使用互补掩模时可以实现邻近效应的校正; 一个互补掩模的部分区域的校正开口布置在另一个互补掩模中。然后在没有额外的曝光步骤的情况下校正邻近效果。为了测量接近效应，建议在光致抗蚀剂中具有减小的脊宽度的线图案通过电子束投影来限定光致抗蚀剂的显影过程以及光致抗蚀剂的显影过程过早地停止的情况。在接近效应的存在下的脊边缘是不对称的，可以在显微镜下容易地检测。

69. 发明授权

US4370554A Alignment system for particle beam lithography 失效
标题翻译：粒子束光刻对准系统
公开(公告)号：US4370554A
公开(公告)日：1983-01-25
申请号：US183118
申请日：1980-09-02
申请人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
发明人： Harald Bohlen , Johann Greschner , Werner Kulcke , Peter Nehmiz
IPC分类号： H01J37/304 , H01L21/68 , G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01L21/682
摘要： The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam is split into a multitude of individual beams which interact with alignment marks on the substrate. The interaction is used to generate a coincidence signal. The signal to noise ratio of this arrangement is determined by the overall current and is comparable to that of a thin concentrated electron beam. Registration is effected in a small amount of time and the disadvantageous effects of the high current density used in the raster process are not a factor. In a preferred embodiment, the alignment pattern of the mask is a matrix with center spacings of openings increasing upon advance in two directions perpendicular to each other such that no distance can be represented by the sum of smaller distances. Alignment signals are provided by detecting either absorbed or reflected electrons. A plurality of detectors in the mask are used to detect the reflected electrons.
摘要翻译：通过使用相对于彼此的特定几何位置中的多个单独的标记来获得特定半导体结构的掩模和衬底图案的相互对准。通过在掩模的对准图案中布置开口，宽电子束被分成与基板上的对准标记相互作用的多个单独的光束。该交互用于产生符合信号。该布置的信噪比由总电流确定，并且与薄的集中电子束的信噪比相当。注册在少量时间内进行，并且在光栅处理中使用的高电流密度的不利影响不是因素。在优选实施例中，掩模的对准图案是矩阵，其中开口的中心间隔在彼此垂直的两个方向上预先增加，使得距离可以由较小距离的和表示。通过检测吸收或反射的电子来提供对准信号。掩模中的多个检测器用于检测反射的电子。

70. 发明授权

US4334156A Method of shadow printing exposure 失效
标题翻译：阴影印刷曝光方法
公开(公告)号：US4334156A
公开(公告)日：1982-06-08
申请号：US70453
申请日：1979-08-28
申请人： Harald Bohlen , Helmut Engelke , Werner Kulcke , Peter Nehmiz , Johann Greschner
发明人： Harald Bohlen , Helmut Engelke , Werner Kulcke , Peter Nehmiz , Johann Greschner
IPC分类号： H01L21/027 , H01J37/30 , H01J37/304 , H01J37/00
CPC分类号： H01J37/3045 , H01J37/3007
摘要： A method of pattern exposing an energy beam sensitive target surface to a particle beam by proximity printing, wherein mask alignment errors such as lateral deviations, skew and linear distortions are determined and are effectively corrected by scanning the mask area being transferred with a controllably tilted particle beam, the particle beam having a diameter which is small compared to the area of the mask being scanned. At each scan point the particle beam is controllably tilted in the same azimuth direction as the alignment error for that point and by a tilt angle (taken with respect to the normal direction of the target surface) which has a tangent equal to the product of the magnitude of the alignment error and the separation between the mask and target surface at that point.
摘要翻译：通过接近印刷将能量束敏感目标表面图案曝光到粒子束的方法，其中确定了诸如横向偏离，偏斜和线性失真的掩模对准误差，并且通过用可控倾斜的粒子扫描掩模区域来有效地校正光束，粒子束的直径与被扫描的掩模的面积相比较小。在每个扫描点处，粒子束在与该点的对准误差相同的方位角方向上可控地倾斜，并且倾斜角（相对于目标表面的法线方向），该角度等于在该点处的对准误差的大小以及掩模和目标表面之间的间隔。

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