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1. 发明授权

US5283107A Modular multilayer interwiring structure 失效
标题翻译：模块化多层互连结构
公开(公告)号：US5283107A
公开(公告)日：1994-02-01
申请号：US878098
申请日：1992-05-04
申请人： Thomas Bayer , Johann Greschner , Willy Hildenbrand , Bernd Marquart , Roland R. Stohr , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Willy Hildenbrand , Bernd Marquart , Roland R. Stohr , Olaf Wolter
IPC分类号： H01L23/12 , H01L23/473 , H01L23/538 , H01L25/065 , H05K3/46 , B32B9/00
CPC分类号： H01L23/5383 , H01L23/473 , H01L23/5384 , H01L25/0655 , H01L2924/0002 , H01L2924/09701 , H01L2924/15312 , Y10S428/901 , Y10T428/24917 , Y10T428/24926
摘要： A modular multilayer interwiring structure comprising a plurality of relatively small parts which are produced separately as `sub-units` (1). Each individual layer of the final structure is formed by joining a respective set of unit parts in one plane. The whole multilayer structure is then built by stacking these layers, preferably so that the units of one layer are not vertically aligned with the units of an adjacent layer. Each unit part includes at least one layer of conductive material (8, 9) on its front and/or rearside. These conductive layers may be individually patterned into diverse interconnection lines (5). Throughconnections (6) extending from the frontside to the backside of the units are provided using a desired set or a standardized array of via holes or openings filled with conductive material. By connecting desired throughconnections to the respective conduction lines, each unit may form an individual part of a more complex multilayer interwiring structure.
摘要翻译：一种模块化多层互连结构，包括多个相对较小的部分，它们分别制造为“子单元”（1）。最终结构的每个单独的层通过在一个平面中连接相应的单元部件组而形成。然后通过堆叠这些层来构建整个多层结构，优选地使得一层的单元不与相邻层的单元垂直对准。每个单元部分在其前部和/或后部包括至少一层导电材料（8,9）。这些导电层可以单独地构图成不同的互连线（5）。通过使用填充有导电材料的通孔或开口的期望的集合或标准化阵列来提供从单元的前侧延伸到后侧的直通连接（6）。通过将期望的连接件连接到相应的导线，每个单元可以形成更复杂的多层互连结构的单独部分。

2. 发明授权

US5242541A Method of producing ultrafine silicon tips for the AFM/STM profilometry 失效
标题翻译：生产AFM / STM型材超导硅胶的方法
公开(公告)号：US5242541A
公开(公告)日：1993-09-07
申请号：US568451
申请日：1990-08-16
申请人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
IPC分类号： G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/04 , G01Q60/16 , G01Q70/10 , Y10S977/878
摘要： A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising:1. providing a silicon substrate and applying a silicon dioxide layer thereto;2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching;3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate;4. thinning the shaft and forming a base by isotropic wet etching; and5. removing the mask by etching.The resulting tip shaft with a rectangular end may be pointed by argon ion milling.In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.
摘要翻译：描述了一种用于生产用于AFM / STM轮廓测量法的超细硅尖端的方法，包括：1.提供硅衬底并向其施加二氧化硅层; 2.通过光刻和湿法或干蚀刻在所述二氧化硅层中产生掩模; 3.通过将在步骤2中产生的掩模图案通过反应离子蚀刻转移到硅衬底中来生产尖端轴; 4.通过各向同性湿法蚀刻使轴变薄并形成基座; 和5.通过蚀刻去除掩模。所产生的具有矩形端部的尖端轴可以通过氩离子铣削来尖。在第二实施例中，在步骤5之前，通过完整的二氧化硅掩模存在各向异性湿法蚀刻步骤，从而产生正好在掩模下面的轴的负轮廓。在该蚀刻步骤之后，通过蚀刻除去掩模。

3. 发明授权

US5162133A Process for fabricating silicon carbide films with a predetermined stress 失效
标题翻译：用于制造具有预定应力的碳化硅膜的工艺
公开(公告)号：US5162133A
公开(公告)日：1992-11-10
申请号：US631138
申请日：1990-12-20
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Olaf Wolter
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Olaf Wolter
IPC分类号： C01B31/36 , C23C16/32 , C23C16/50 , C23C16/52 , G01Q30/12
CPC分类号： C23C16/325
摘要： The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps:a) introducing a gas mixture of silane (SiH.sub.4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber;b) reacting the silane and ethylene at a temperature >400.degree. C., and in a total pressure range of about 26.6 to 266 Pa, at an RF power
摘要翻译：本发明涉及通过控制沉积参数来制造具有预定应力的碳化硅膜和膜的方法，其包括以下步骤：a）以大约流速引入硅烷（SiH4）/氦和乙烯的气体混合物 1000 sccm / min。和约10sccm / min。进入反应室; b）在温度> 400℃，总压力范围约26.6至266Pa，在13.56MHz的RF功率<100W下使硅烷和乙烯反应，所述硅烷和乙烯之间的反应开始并通过辉光放电增强。在优选的实施方案中，本征薄膜应力是拉伸，硅烷和乙烯在约500℃的温度下，总压力范围超过106.4Pa，在13.56MHz的RF功率为75W下反应。拉伸应力膜可以涂覆有金属吸收层，在吸收层中产生期望的掩模图案，并且从湿蚀刻的背面去除基底。所得的X射线掩模具有光滑的表面，优异的尺寸稳定性和X射线辐射的透明度。

4. 发明授权

US5116462A Method of producing micromechanical sensors for the AFM/STM profilometry 失效
标题翻译：生产用于AFM / STM特性测定的微观传感器的方法
公开(公告)号：US5116462A
公开(公告)日：1992-05-26
申请号：US568286
申请日：1990-08-16
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
IPC分类号： G01B7/34 , B44C1/22 , B81C1/00 , C03C15/00 , C23F1/00 , G01N27/00 , G01Q60/04 , G01Q70/16 , H01J37/28 , H01L21/306 , H01L41/09
CPC分类号： G01Q60/04 , B82Y35/00 , G01Q70/16
摘要： A micromechanical sensor is described for the AFM/STM profilometry, incorporating a cantilever beam with at least one tip at its end and a mounting block at the opposite end. A method is described incorporating the steps of coating a wafer substrate with an insulating layer, forming a mask in the insulating layer, etching a trench in the wafer substrate, removing the insulating layer, coating the desired cantilever beam and tip material, respectively, etching the cantilever beam and tip material, and removing at least a portion of the supporting wafer material from the bottom side. The invention overcomes the problem of forming a micromechanical sensor having a cantilever beam, a tip with a predetermined shape and a mounting block.
摘要翻译：描述了一种用于制造用于AFM / STM轮廓测量法的微机械传感器的方法，该方法由其端部具有至少一个尖端的悬臂梁和相对的一个安装块组成，包括：1.用绝缘层双面涂覆晶片衬底 ; 3，使用第一光刻步骤和反应离子蚀刻法，在晶片的顶侧上的绝缘层中制造掩模以用于将来的沟槽或凹槽蚀刻，以及在晶片的底侧的绝缘层中的掩模。通过反应离子或各向异性湿蚀刻分别在晶片衬底中产生沟槽或凹槽，然后通过蚀刻从顶侧除去绝缘层：4.用所需的悬臂涂覆晶片表面和沟槽或凹槽梁和尖端材料; 分别在第二光刻步骤和干蚀刻或湿蚀刻步骤中对悬臂梁和尖端进行抛光; 以及6.通过底面掩模的各向异性湿蚀刻从底侧移除支撑晶片材料。在优选的实施例中，悬臂梁的顶侧上的与底部的剩余片晶片相对应的区域在约300℃和1000V下通过“隆隆”键合与玻璃块接合。此外，表面可以在第一步骤中涂覆具有非共形步骤覆盖的材料，并且在具有保形阶段覆盖层的材料的第二步中涂覆晶片衬底和沟槽。悬臂梁和尖端在保形台阶覆盖层中露出，并通过底侧掩模的选择性蚀刻去除支撑晶片和非共形台阶覆盖层。本发明还包括用于AFM / STM轮廓测量的微机械传感器，其由一件材料微机械地制造。

5. 发明授权

US5382795A Ultrafine silicon tips for AFM/STM profilometry 失效
标题翻译：用于AFM / STM轮廓测定的超细硅胶头
公开(公告)号：US5382795A
公开(公告)日：1995-01-17
申请号：US209682
申请日：1994-03-10
申请人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
IPC分类号： G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/04 , G01Q60/16 , G01Q70/10 , Y10S977/878
摘要： An ultrafine tip for AFM and STM profilometry of trenches having sidewalls. The tip includes a lateral circumferential edge protrusion to allow profilometry of the sidewalls of a trench located in a semiconductor or insulator substrate.
摘要翻译：具有侧壁的沟槽的AFM和STM轮廓测量法的超细尖端。尖端包括侧向周向边缘突起，以允许位于半导体或绝缘体衬底中的沟槽的侧壁的轮廓测量。

6. 发明授权

US5051379A Method of producing micromechanical sensors for the AFM/STM profilometry and micromechanical AFM/STM sensor head 失效
标题翻译：用于AFM / STM轮廓测量和微机械AFM / STM传感器头的微机械传感器的生产方法
公开(公告)号：US5051379A
公开(公告)日：1991-09-24
申请号：US568306
申请日：1990-08-16
申请人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
IPC分类号： G01B7/34 , B81C1/00 , C23F1/00 , G01N27/00 , G01Q60/16 , G01Q60/38 , G01Q70/02 , G02B21/00 , H01J37/28 , H01L21/302 , H01L41/09
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q60/04 , G01Q60/38
摘要： A method and apparatus is described for a micromechanical sensor for the AFM/STM profilometry, which consist of a cantilever beam with a tip at its end and a mounting block at the opposite end. The method incorporated the steps of coating a wafer substrate; producing a mask for the desired cantilever beam pattern on the top side of the wafer; and a mask on the bottom side of the wafer; planarizing said cantilever beam pattern with photoresist; producing a mask for the desired tip in the area of the cantilever beam pattern producing the desired tip using an etching step, and simultaneously transferring the cantilever beam pattern from the upper to the lower part of the layer; and removing the supporting wafer material by etching through the bottom side mask. A mask for the desired cantilever beam pattern and the tip pattern contains all relevant information for a subsequent substrate etching process is described for etching step by step into a silicon substrate.

7. 发明授权

US4843315A Contact probe arrangement for electrically connecting a test system to the contact pads of a device to be tested 失效
标题翻译：用于将测试系统电连接到待测试设备的接触垫的接触探针布置
公开(公告)号：US4843315A
公开(公告)日：1989-06-27
申请号：US167676
申请日：1988-03-14
申请人： Thomas Bayer , Michael Elsasser , Johann Greschner , Heinrich Schmid , Roland Stohr , Olaf Wolter , Jurgen Wittlinger
发明人： Thomas Bayer , Michael Elsasser , Johann Greschner , Heinrich Schmid , Roland Stohr , Olaf Wolter , Jurgen Wittlinger
IPC分类号： G01R31/26 , G01R1/073 , G01R31/28
CPC分类号： G01R1/07357
摘要： The contact probe arrangement includes a stack of perforated plates (1, 1a) through which extend a plurality contact probes. The stack of perforated plates consists of two kinds of plates. The first kind forms the lowermost plates (1a). They have circular or square holes permitting a vertical placing of the contact probes onto the contact pads (4) of the device (5) to be tested. The plates (1) of the second kind have oblong, rectangular, square, circular, elliptical or trapezoidal holes (3). With respect to the stacked plates of the second kind, alternate ones are offset against the two other adjacent plates which are aligned relative to each other, in such a manner that each contact probe is surrounded by part of the lower edge of the upper of two adjacent perforated plates, and part of the upper edge of the lower of two adjacent perforated plates. If axial stress is applied, the contact probe can thus not buckle any farther than to a part of the perforation wall limiting its maximum buckling. This ensures a sufficiently low contact resistance between the contact probe and the contact pad of the device to be tested. By using a corresponding number of perforated plates of the second kind the contact probes can adapt to height differences of the contact pads caused by irregularities in the surface of the device to be tested.
摘要翻译：接触探针装置包括多个多孔板（1,1a）的堆叠，通过该堆叠多个多孔板延伸多个接触探针。多孔板堆叠由两种板组成。第一种形成最下面的板（1a）。它们具有允许将接触探针垂直放置在待测试装置（5）的接触垫（4）上的圆形或方形孔。第二类的板（1）具有长方形，矩形，正方形，圆形，椭圆形或梯形孔（3）。对于第二类的堆叠板，替代物相对于彼此对准的另外两个相邻的板偏移，使得每个接触探针被两个上部的下边缘的一部分包围相邻的穿孔板和两个相邻多孔板的下部的上边缘的一部分。如果施加轴向应力，则接触探针因此可能不会比限制其最大屈曲的穿孔壁的一部分更加弯曲。这确保接触探针和待测试装置的接触垫之间的接触电阻足够低。通过使用相应数量的第二种多孔板，接触探针可以适应由待测试装置的表面中的不规则引起的接触垫的高度差异。

8. 发明授权

US5283437A Pneumatically and electrostatically driven scanning tunneling microscope 失效
标题翻译：气动和静电扫描隧道显微镜
公开(公告)号：US5283437A
公开(公告)日：1994-02-01
申请号：US20008
申请日：1993-02-17
申请人： Johann Greschner , Martin Nonnenmacher , Olaf Wolter
发明人： Johann Greschner , Martin Nonnenmacher , Olaf Wolter
IPC分类号： G01Q60/16 , G01Q10/04 , H01J37/26
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q10/04 , Y10S977/861 , Y10S977/871 , Y10S977/872 , Y10S977/875
摘要： A scanning tunneling microscope is disclosed with the probe tip formed as an integral part of a membrane. A counter-electrode is formed on the membrane and four electrodes are provided spaced apart from the counter-electrode. The tip is scanned by means of these electrodes. Coarse positioning of the tip along the Z axis is done by applying pressure or vacuum to the membrane. Also disclosed is the method of making the scanning tunneling microscope.
摘要翻译：公开了扫描隧道显微镜，探针尖端形成为膜的整体部分。在膜上形成对电极，并且与对置电极隔开设置四个电极。尖端通过这些电极进行扫描。通过向膜施加压力或真空来实现尖端沿Z轴的粗略定位。还公开了制造扫描隧道显微镜的方法。

9. 发明授权

US5213600A Method of manufacturing an optical Storage disk 失效
标题翻译：制造光存储盘的方法
公开(公告)号：US5213600A
公开(公告)日：1993-05-25
申请号：US445866
申请日：1989-11-22
申请人： Johann Greschner , Gerhard Schmid , Werner Steiner , Gerhard Trippel , Olaf Wolter
发明人： Johann Greschner , Gerhard Schmid , Werner Steiner , Gerhard Trippel , Olaf Wolter
IPC分类号： B29D17/00 , G11B7/24 , G11B7/253 , G11B7/26
CPC分类号： C03B11/082 , B29D17/005 , C03B11/084 , C03B11/086 , C03B11/12 , C03B11/122 , C03B11/125 , C03B23/0013 , G11B7/26 , C03B2215/05 , C03B2215/06 , C03B2215/24 , C03B2215/412 , C03B2215/44 , C03B2215/45
摘要： An optical storage disk includes a glass substrate (1) into which guide tracks (3) for servo-controlling the focussed light beams are directly stamped in by hot stamp process. After stamping, the glass substrate is thermally quenched in the stamping device to increase its breaking resistance through thermal curing. In order to achieve uniform guide tracks over the entire surface of an optical storage disk, flexible stamp stencils (35) in a flexible holder (34) are used whose curvature can be changed by applying hydro-static pressure. Suitable stamp stencils include monocristalline silicon disks with surface hardening, or of metal disks, structured photolithographic processes. The stamp lands are made with bevelled edges to facilitate the separating of stamp and glass substrate after cooling.
摘要翻译： PCT No.PCT / EP88 / 00479 Sec。 371日期：一九八九年十一月二十二日 102（e）日期1989年11月22日PCT提交1989年5月27日PCT公布。公开号WO88 / 09990 日期为1988年12月15日。光存储盘包括玻璃基板（1），用于伺服控制聚焦光束的引导轨道（3）通过热压印工艺被直接冲压。冲压后，将玻璃基板在冲压装置中进行热淬火，以通过热固化提高其抗断裂性。为了在光学存储盘的整个表面上实现均匀的导轨，使用柔性保持器（34）中的柔性印模模版（35），其曲率可以通过施加静水压力而改变。合适的印模模具包括具有表面硬化的单晶硅盘，或金属盘的结构光刻工艺。印章土地由倾斜的边缘制成，以便在冷却后分隔印模和玻璃基板。

10. 发明授权

US4806755A Micromechanical atomic force sensor head 失效
标题翻译：微机械原子力传感器头
公开(公告)号：US4806755A
公开(公告)日：1989-02-21
申请号：US103993
申请日：1987-10-01
申请人： Urs T. Duerig , James K. Gimewski , Johann Greschner , Wolfgang D. Pohl , Olaf Wolter
发明人： Urs T. Duerig , James K. Gimewski , Johann Greschner , Wolfgang D. Pohl , Olaf Wolter
IPC分类号： G01B7/34 , G01B7/00 , G01B21/30 , G01D5/04 , G01L1/00 , G01L1/04 , G01N13/00 , G01N23/00 , G01N37/00 , G01Q20/04 , G01Q40/00 , G01Q60/38 , G01Q70/14 , H01J37/26 , H01J37/28
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q20/04 , Y10S977/863
摘要： The micromechanical sensor head is designed to measure forces down to 10.sup.-13 N. It comprises a common base from which a cantilever beam and a beam member extend in parallel. The cantilever beam carries a sharply pointed tip of a hard material, dielectric or not, for interaction with the surface of a sample to be investigated. Bulges forming a tunneling junction protrude from facing surfaces of said beams, the gap between said bulges being adjustable by means of electrostatic forces generated by a potential (V.sub.d) applied to a pair of electrodes respectively coated onto parallel surface of said beams. The sensor head consists of one single piece of semiconductor material, such as silicon or gallium arsenide (or any other compounds thereof) which is fabricated to the dimensions required for the application by means of conventional semiconductor chip manufacturing techniques.

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