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1. 发明授权

US5304278A Apparatus for plasma or reactive ion etching and method of etching substrates having a low thermal conductivity 失效
标题翻译：用于等离子体或反应离子蚀刻的装置以及蚀刻具有低热导率的基板的方法
公开(公告)号：US5304278A
公开(公告)日：1994-04-19
申请号：US935661
申请日：1992-08-24
申请人： Johann Bartha , Thomas Bayer , Johann Greschner , Dieter Kern , Volker Mattern , Roland Stoehr
发明人： Johann Bartha , Thomas Bayer , Johann Greschner , Dieter Kern , Volker Mattern , Roland Stoehr
IPC分类号： C08J7/00 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , B05C1/00
CPC分类号： H01L21/67069
摘要： Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a predetermined spacing from the cathode to which RF energy is applied. According to a preferred embodiment of the invention, the cathode is raised in the area of the substrate to be etched to within a spacing of about 0.2 mm from the bottom side of the substrate. The cathode is made of aluminium, and is provided in the area of the substrate to be etched with a layer which acts as a black radiator. The heat formed during RIE is removed by radiation, and the radiation reflected from the cathode to the substrate is absorbed by the layer. Also disclosed is a method of etching substrates having a low thermal conductivity, in particular plastic substrates.
摘要翻译：公开了一种真空反应器，用于蚀刻具有低热蚀性的基板以达到高的蚀刻速度均匀性，其中待蚀刻的基板以与施加有RF能量的阴极预定的间隔布置在保持器中。根据本发明的优选实施例，阴极在待蚀刻的基底的区域中升高到与基底的底侧约0.2mm的间隔。阴极由铝制成，并且设置在用作黑色散热器的层的被蚀刻基板的区域中。在RIE期间形成的热量被辐射除去，从阴极反射到衬底的辐射被层吸收。还公开了一种蚀刻具有低热导率的衬底，特别是塑料衬底的方法。

2. 发明授权

US5296091A Method of etching substrates having a low thermal conductivity 失效
标题翻译：蚀刻导热率低的基板的方法
公开(公告)号：US5296091A
公开(公告)日：1994-03-22
申请号：US768490
申请日：1991-09-30
申请人： Johann Bartha , Thomas Bayer , Johann Greschner , Dieter Kern , Volker Mattern , Roland Stoehr
发明人： Johann Bartha , Thomas Bayer , Johann Greschner , Dieter Kern , Volker Mattern , Roland Stoehr
IPC分类号： C08J7/00 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , B01J15/00
CPC分类号： H01L21/67069
摘要： Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a predetermined spacing from the cathode to which RF energy is applied. According to a preferred embodiment of the invention, the cathode is raised in the area of the substrate to be etched to within a spacing of about 0.2 mm from the bottom side of the substrate. The cathode is made of aluminium, and is provided in the area of the substrate to be etched with a layer which acts as a black radiator. The heat formed during RIE is removed by radiation, and the radiation reflected from the cathode to the substrate is absorbed by the layer. Also disclosed is a method of etching substrates having a low thermal conductivity, in particular plastic substrates.
摘要翻译：公开了一种真空反应器，用于蚀刻具有低热蚀性的基板以达到高的蚀刻速度均匀性，其中待蚀刻的基板以与施加有RF能量的阴极预定的间隔布置在保持器中。根据本发明的优选实施例，阴极在待蚀刻的基底的区域中升高到与基底的底侧约0.2mm的间隔。阴极由铝制成，并且设置在用作黑色散热器的层的被蚀刻基板的区域中。在RIE期间形成的热量被辐射除去，从阴极反射到衬底的辐射被层吸收。还公开了一种蚀刻具有低热导率的衬底，特别是塑料衬底的方法。

3. 发明授权

US06356089B2 Contact probe arrangement 失效
标题翻译：接触探头安排
公开(公告)号：US06356089B2
公开(公告)日：2002-03-12
申请号：US08946964
申请日：1997-10-08
申请人： Thomas Bayer , Johann Greschner , Klaus Meissner , Werner Steiner , Roland Stoehr
发明人： Thomas Bayer , Johann Greschner , Klaus Meissner , Werner Steiner , Roland Stoehr
IPC分类号： G01R3102
CPC分类号： G01R31/2886 , G01R1/07314
摘要： The invention relates to a contact probe arrangement for electrically connecting a test system with contact pads of a device to be tested. The contact probes are located in guide grooves. The guide grooves as well as areas are provided in a plane parallel to the surface of a guide plate and are covered by a protective plate. The contact probes may bend out laterally into the respective areas. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in integrated circuits or semiconductor chips. The invention overcomes the problem of adjusting for height differences in the contact pads caused by an uneven surface of the device to be tested.
摘要翻译：本发明涉及用于将测试系统与要测试的设备的接触垫电连接的接触探针装置。接触探针位于导槽中。引导槽以及区域设置在与引导板的表面平行的平面中并被保护板覆盖。接触探针可以横向弯曲到相应的区域中。这确保非常密集的接触探针阵列。可以使用这种类型的接触式探针阵列，例如用于检测集成电路或半导体芯片中的开路和短路。本发明克服了由待测试装置的不平坦表面引起的接触垫高度差的调节问题。

4. 发明申请

US20090114818A1 Particle-Optical Component 有权
标题翻译：粒子光学部件
公开(公告)号：US20090114818A1
公开(公告)日：2009-05-07
申请号：US11991546
申请日：2006-09-06
申请人： Antonio Casares , Rainer Knippelmeyer , Thomas Kemen , Thomas Bayer , Georg Fritz , Johann Greschner , Samuel Kalt
发明人： Antonio Casares , Rainer Knippelmeyer , Thomas Kemen , Thomas Bayer , Georg Fritz , Johann Greschner , Samuel Kalt
IPC分类号： G01N23/00
CPC分类号： H01J37/04 , H01J37/045 , H01J37/09 , H01J37/145 , H01J37/147 , H01J37/244 , H01J37/3177 , H01J2237/0435 , H01J2237/0453 , H01J2237/04922 , H01J2237/04924 , H01J2237/04926 , H01J2237/15 , H01J2237/2446 , H01J2237/2448 , H01J2237/2561 , H01J2237/2817 , H01J2237/31774
摘要： The present invention relates to a particle-optical component comprising a first multi-aperture plate, and a second multi-aperture plate forming a gap between them; wherein a plurality of apertures of the first multi-aperture plate is arranged such that each aperture of the plurality of apertures of the first multi-aperture plate is aligned with a corresponding aperture of a plurality of apertures of the second multi-aperture plate; and wherein the gap has a first width at a first location and a second width at a second location and wherein the second width is by at least 5% greater than the first width. In addition, the present invention pertains to charged particle systems and arrangements comprising such components and methods of manufacturing multi aperture plates having a curved surface.
摘要翻译：本发明涉及一种包括第一多孔板和在其间形成间隙的第二多孔板的颗粒光学部件; 其中所述第一多孔板的多个孔被布置成使得所述第一多孔板的所述多个孔中的每个孔与所述第二多孔板的多个孔的对应孔对齐; 并且其中所述间隙在第一位置处具有第一宽度，在第二位置处具有第二宽度，并且其中所述第二宽度比所述第一宽度大至少5％。此外，本发明涉及包含这些部件的带电粒子系统和布置以及制造具有弯曲表面的多孔板的方法。

5. 发明授权

US06218264B1 Method of producing a calibration standard for 2-D and 3-D profilometry in the sub-nanometer range 失效
标题翻译：在亚纳米范围内制作2-D和3-D轮廓测量法的校准标准的方法
公开(公告)号：US06218264B1
公开(公告)日：2001-04-17
申请号：US09314410
申请日：1999-05-19
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher , Helga Weiss
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher , Helga Weiss
IPC分类号： H01L21311
CPC分类号： G01Q40/02 , Y10S438/975 , Y10S977/852 , Y10S977/878 , Y10T428/24926
摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.
摘要翻译：校准标准包括具有由凸起线（2）和沟槽（3）组成的至少一对不同种类的结构的单晶材料的支撑结构（1）。这些结构具有在约500nm范围内相同的宽度。单晶材料优选为具有（110）取向的硅。一种生产校准标准的方法包括以下步骤：提供相同单晶材料的两个抛光晶片并具有相同的晶体取向，在第一晶片的抛光表面上形成氧化物层，将第二晶片接合到第一氧化晶片其中晶片的抛光表面彼此面对，切割与抛光表面横向的结合结构，选择性地将两个晶片刻蚀到限定的深度以暴露氧化物层的一部分，掩盖现在代表凸起的氧化物层的部分线（2），并且将未掩模区域中的氧化物层选择性蚀刻到限定的深度以形成沟槽（3）。校准标准克服了在亚纳米范围内测量AFM / STM轮廓测量法的超细尖端直径的问题。

6. 发明授权

US5382795A Ultrafine silicon tips for AFM/STM profilometry 失效
标题翻译：用于AFM / STM轮廓测定的超细硅胶头
公开(公告)号：US5382795A
公开(公告)日：1995-01-17
申请号：US209682
申请日：1994-03-10
申请人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
IPC分类号： G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/04 , G01Q60/16 , G01Q70/10 , Y10S977/878
摘要： An ultrafine tip for AFM and STM profilometry of trenches having sidewalls. The tip includes a lateral circumferential edge protrusion to allow profilometry of the sidewalls of a trench located in a semiconductor or insulator substrate.
摘要翻译：具有侧壁的沟槽的AFM和STM轮廓测量法的超细尖端。尖端包括侧向周向边缘突起，以允许位于半导体或绝缘体衬底中的沟槽的侧壁的轮廓测量。

7. 发明授权

US5051379A Method of producing micromechanical sensors for the AFM/STM profilometry and micromechanical AFM/STM sensor head 失效
标题翻译：用于AFM / STM轮廓测量和微机械AFM / STM传感器头的微机械传感器的生产方法
公开(公告)号：US5051379A
公开(公告)日：1991-09-24
申请号：US568306
申请日：1990-08-16
申请人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
IPC分类号： G01B7/34 , B81C1/00 , C23F1/00 , G01N27/00 , G01Q60/16 , G01Q60/38 , G01Q70/02 , G02B21/00 , H01J37/28 , H01L21/302 , H01L41/09
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q60/04 , G01Q60/38
摘要： A method and apparatus is described for a micromechanical sensor for the AFM/STM profilometry, which consist of a cantilever beam with a tip at its end and a mounting block at the opposite end. The method incorporated the steps of coating a wafer substrate; producing a mask for the desired cantilever beam pattern on the top side of the wafer; and a mask on the bottom side of the wafer; planarizing said cantilever beam pattern with photoresist; producing a mask for the desired tip in the area of the cantilever beam pattern producing the desired tip using an etching step, and simultaneously transferring the cantilever beam pattern from the upper to the lower part of the layer; and removing the supporting wafer material by etching through the bottom side mask. A mask for the desired cantilever beam pattern and the tip pattern contains all relevant information for a subsequent substrate etching process is described for etching step by step into a silicon substrate.

8. 发明授权

US4969415A PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides 失效
公开(公告)号：US4969415A
公开(公告)日：1990-11-13
申请号：US458006
申请日：1989-12-28
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
IPC分类号： C23C16/08 , C23C16/30 , C23C16/448 , C23C16/50 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4488 , C23C16/08 , H01L21/28556 , Y10S148/147
摘要： The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

9. 发明授权

US6028008A Calibration standard for profilometers and manufacturing procedure 失效
标题翻译：轮廓仪和制造程序的校准标准
公开(公告)号：US6028008A
公开(公告)日：2000-02-22
申请号：US987213
申请日：1997-12-09
申请人： Thomas Bayer , Johann Greschner , Klaus Meissner
发明人： Thomas Bayer , Johann Greschner , Klaus Meissner
IPC分类号： G01B5/02 , G01B5/18 , H01L21/00
CPC分类号： G01Q40/02 , B82Y35/00 , G01B5/02 , G01B5/18
摘要： The invention relates to calibration standards which are used chiefly for the calibration of profilometers and in atomic force- and scanning probe microscopes. The calibration standard has one step of defined height H or a multi-step system formed of several steps of the same step-height H and consisting of exactly one material. The manufacturing procedure for the calibration standard requires only a single masking layer for each of the different versions in the form of a one-step standard or a multi-step system.
摘要翻译：本发明涉及主要用于校准轮廓仪和原子力扫描探针显微镜的校准标准。校准标准具有定义的高度H或由相同步长H的几个步骤形成的多个步骤系统的一个步骤，并且由恰好一个材料组成。校准标准的制造程序只需要一个单步骤标准或多步骤系统形式的不同版本的每个单一屏蔽层。

10. 发明授权

US5960255A Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it 失效
标题翻译：亚纳米范围内二维和三维轮廓测量的校准标准及其制作方法
公开(公告)号：US5960255A
公开(公告)日：1999-09-28
申请号：US842307
申请日：1997-04-24
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher, deceased , Helga Weiss
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher, deceased , Helga Weiss
IPC分类号： B32B9/00 , G01B5/20 , G01Q60/00 , G01R31/26 , H01L21/00 , H01L21/311 , H01L21/66 , H01L21/76
CPC分类号： G01Q40/02 , B82Y35/00 , Y10S438/975 , Y10S977/852 , Y10S977/878 , Y10T428/24926
摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.
摘要翻译：校准标准包括具有由凸起线（2）和沟槽（3）组成的至少一对不同种类的结构的单晶材料的支撑结构（1）。这些结构具有在约500nm范围内相同的宽度。单晶材料优选为具有（110）取向的硅。一种生产校准标准的方法包括以下步骤：提供相同单晶材料的两个抛光晶片并具有相同的晶体取向，在第一晶片的抛光表面上形成氧化物层，将第二晶片接合到第一氧化晶片其中晶片的抛光表面彼此面对，切割与抛光表面横向的结合结构，选择性地将两个晶片刻蚀到限定的深度以暴露氧化物层的一部分，掩盖现在代表凸起的氧化物层的部分线（2），并且将未掩模区域中的氧化物层选择性蚀刻到限定的深度以形成沟槽（3）。校准标准克服了在亚纳米范围内测量AFM / STM轮廓测量法的超细尖端直径的问题。

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