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61. 发明授权

US07023002B2 Surface treating device and surface treating method 失效
标题翻译：表面处理装置及表面处理方法
公开(公告)号：US07023002B2
公开(公告)日：2006-04-04
申请号：US10895039
申请日：2004-07-21
申请人： Kazuya Nagaseki , Tadashi Onishi , Koichi Murakami , Daisuke Hayashi , Akiko Kamigori , Minoru Honda
发明人： Kazuya Nagaseki , Tadashi Onishi , Koichi Murakami , Daisuke Hayashi , Akiko Kamigori , Minoru Honda
IPC分类号： G21G5/00 , H01J37/00
CPC分类号： H01L21/67161 , G03F7/40 , H01J2237/31 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/68785
摘要： Installed in a vacuum chamber is a mounting table for supporting semiconductor wafer, which is a substrate to be treated, with an electron beam irradiation mechanism mounted on the ceiling of the vacuum chamber for generating electron beams. The mounting table is adapted to be vertically moved by a lifting/lowering device, allowing the distance between the electron beam irradiating mechanism and the semiconductor wafer to be set at a desired value. This makes it possible to perform a uniform satisfactory treatment over the entire surface of the substrate to be treated.
摘要翻译：安装在真空室中的是用于支撑作为待处理基板的半导体晶片的安装台，其中电子束照射机构安装在用于产生电子束的真空室的天花板上。安装台适于通过提升/降低装置垂直移动，允许将电子束照射机构和半导体晶片之间的距离设定在期望值。这使得可以对待处理的基底的整个表面进行均匀的令人满意的处理。

62. 发明申请

US20050211383A1 Magnetron plasma-use magnetic field generation device 审中-公开
标题翻译：磁控管等离子体使用磁场发生装置
公开(公告)号：US20050211383A1
公开(公告)日：2005-09-29
申请号：US10525240
申请日：2003-08-21
申请人： Koji Miyata , Kazuyuki Tezuka , Koichi Tateshita , Hiroo Ono , Kazuya Nagaseki , Shinji Himori
发明人： Koji Miyata , Kazuyuki Tezuka , Koichi Tateshita , Hiroo Ono , Kazuya Nagaseki , Shinji Himori
IPC分类号： C23F1/00 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/31116 , H01J37/32623 , H01J37/3266 , H01J37/32688 , H01L21/31138 , H01L21/32137 , H01L21/67069
摘要： Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.
摘要翻译：公开了一种用于磁控管等离子体的磁场发生器。磁场发生器设置有多个磁段，并且在处理室内的工件衬底的周边周围产生预定的多极磁场。控制多极磁场的强度，使得多极磁场的状态与不同的等离子体处理相匹配。此外，可以改变多极磁场的图案，以便匹配基板的不同尺寸。

63. 发明申请

US20050082256A1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20050082256A1
公开(公告)日：2005-04-21
申请号：US10960538
申请日：2004-10-08
申请人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： C23F1/00 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32688 , H01J2237/3347 , H01L21/31138 , H01L21/31144
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的方法，以及通过等离子体中途等离子体刻蚀基板的有机材料膜以形成具有平坦底部的凹槽。在蚀刻步骤中，施加到至少一个电极的高频电力的频率为50〜150MHz。

64. 发明申请

US20050023254A1 Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod 有权
标题翻译：等离子体处理装置，电极单元，馈线构件和射频馈线棒
公开(公告)号：US20050023254A1
公开(公告)日：2005-02-03
申请号：US10927587
申请日：2004-08-27
申请人： Daisuke Hayashi , Kazuya Nagaseki , Shinji Himori , Atsushi Matsuura , Ryo Nonaka
发明人： Daisuke Hayashi , Kazuya Nagaseki , Shinji Himori , Atsushi Matsuura , Ryo Nonaka
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532
摘要： The present invention relates to a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus of the present invention includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion is communicated with an atmospheric air outside the processing container.
摘要翻译：等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其将处理气体引入到气密处理容器中，该处理容器应用射频功率以产生等离子体，并且将等离子体处理传送到处理容器中布置的被处理物体。本发明的等离子体处理装置包括：布置在处理容器中的电极单元，具有用于施加射频功率的电极的电极单元和布置在电极单元中的空间部分，绝缘电极和处理容器彼此。空间部分与处理容器外部的大气连通。

65. 发明授权

US6074518A Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US6074518A
公开(公告)日：2000-06-13
申请号：US225010
申请日：1999-01-04
申请人： Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Hiroshi Tsuchiya , Masayuki Tomoyasu , Yukio Naito , Kazuya Nagaseki , Ryo Nonaka , Keizo Hirose , Yoshio Fukasawa , Akira Koshiishi , Isao Kobayashi
发明人： Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Hiroshi Tsuchiya , Masayuki Tomoyasu , Yukio Naito , Kazuya Nagaseki , Ryo Nonaka , Keizo Hirose , Yoshio Fukasawa , Akira Koshiishi , Isao Kobayashi
IPC分类号： H01J37/32 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.
摘要翻译：等离子体处理装置包括室，以及上部电极和下部电极，其平行地设置在腔室中以预定间隔彼此相对，用于限定电极之间的等离子体产生区域。被处理物体安装在下电极上。向电极提供RF功率，使得在电极之间产生等离子体，从而对被处理物进行等离子体处理。在室内的等离子体产生区域周围设置圆柱形接地电极，用于将等离子体封装在等离子体产生区域中，并具有用于通过处理气体的多个通孔。

66. 发明授权

US5942075A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5942075A
公开(公告)日：1999-08-24
申请号：US664500
申请日：1996-06-17
申请人： Kazunori Nagahata , Kazuya Nagaseki
发明人： Kazunori Nagahata , Kazuya Nagaseki
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23F1/08
CPC分类号： H01J37/32458 , C23C16/4401 , C23C16/5096 , H01J37/32082
摘要： A plasma processing apparatus includes a processing vessel for accommodating an object to be processed, a processing supplying mechanism for supplying processing gas into the processing vessel, first and second electrodes arranged to oppose each other in the processing vessel, and high-frequency power supply for supplying a high-frequency power to at least one of the first and second electrodes. The apparatus forms a plasma of the processing gas by using discharge occurring between the first and second electrodes due to the high-frequency power and performs a plasma process for the object by using the plasma. The surface of a solid except for the object to be processed in the processing vessel has a corner portion and a portion other than the corner portion, and the solid surface has a shape by which the thickness of a sheath formed between the solid surface and the plasma is nearly uniform in the corner portion and the other portion.
摘要翻译：等离子体处理装置包括用于容纳被处理物体的处理容器，将处理气体供给到处理容器内的处理供给机构，处理容器内相对配置的第一和第二电极，以及高频电源，向第一和第二电极中的至少一个提供高频电力。该装置由于高频功率而通过使用在第一和第二电极之间发生的放电来形成处理气体的等离子体，并且通过使用等离子体来执行对象的等离子体处理。在处理容器中除了待处理物体之外的固体表面具有角部和角部以外的部分，并且固体表面具有在固体表面和固体表面之间形成的护套的厚度的形状等离子体在角部和另一部分中几乎均匀。

67. 发明授权

US5698062A Plasma treatment apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US5698062A
公开(公告)日：1997-12-16
申请号：US533383
申请日：1995-09-25
申请人： Takao Sakamoto , Kazuhiro Tahara , Kenji Momose , Kosuke Imafuku , Shosuke Endo , Yukio Naito , Kazuya Nagaseki , Keizo Hirose
发明人： Takao Sakamoto , Kazuhiro Tahara , Kenji Momose , Kosuke Imafuku , Shosuke Endo , Yukio Naito , Kazuya Nagaseki , Keizo Hirose
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/509 , C23C16/517 , H01J37/32 , C23F1/02 , C23C14/34 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32155 , H01J37/32165 , H01J37/3244
摘要： A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.1, to pass through it but to cut off radio frequency voltage, which has the second frequency f.sub.2, while plasma is being generated.
摘要翻译：一种等离子体处理装置，包括接地室，用于排出室的真空泵，安装有晶片的可动装置，布置在室中的与电容器相对的喷淋电极，用于向晶片供给等离子体产生气体的单元通过淋浴电极的检测器，将具有第一频率f1的射频电压的第一射频电源提供给所述吸入器和淋浴电极，所述第二射频电源用于增加射频电压，所述第二射频电源具有比第一频率f1高的第二频率f2，至少一个至少一个所述电动机和所述淋浴电极，其一次侧连接到所述第一射频电源并且其次级侧连接到所述第一和第二电极的变压器和低布置在变压器的次级侧的电路中，并且用于使具有第一频率f1的射频电压通过而是在等离子体产生时切断具有第二频率f2的射频电压。

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