会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Speaker diaphragm and speaker device
    • 扬声器隔膜和扬声器设备
    • US08750554B2
    • 2014-06-10
    • US13502651
    • 2010-10-15
    • Takao Sakamoto
    • Takao Sakamoto
    • H04R7/14
    • H04R7/14H04R7/12
    • A speaker diaphragm (2), and plural dimples (16) which are disposed radially from a center side toward the outside of the speaker diaphragm (2) and which have arch structures formed to have a concave-like shapes so as to disperse a stress are provided, whereby while weight saving is realized in terms of the speaker diaphragm (2) by the plural dimples (16) formed to have the concave-like shapes, high rigidity is maintained by the arch structures of the dimples concerned, and a maximum sound pressure can be increased along with the weight saving concerned.
    • 扬声器振动板(2)和多个凹部(16),其从扬声器振动膜(2)的中心侧朝向外侧放置,并且具有形成为具有凹状的弓形结构,以分散应力 由此,通过形成为具有凹状的多个凹部(16),通过扬声器振动膜(2)实现重量节约,通过相关凹坑的拱形结构保持高刚性,并且最大 声压可以随着重量的减轻而增加。
    • 3. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07176491B2
    • 2007-02-13
    • US11091570
    • 2005-03-29
    • Yoshihiko ToyodaTakao SakamotoKazuyuki Sugahara
    • Yoshihiko ToyodaTakao SakamotoKazuyuki Sugahara
    • H01L29/04
    • H01L27/1222H01L27/1214H01L27/127H01L29/66757H01L29/78624H01L2029/7863
    • A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.
    • 在玻璃基板上形成氮化硅膜和氧化硅膜。 在氧化硅膜上形成薄膜晶体管T,该薄膜晶体管T包括源极区,漏极区,具有预定沟道长度的沟道区,具有低于源区杂质浓度的杂质浓度的第一GOLD区, GOLD区域的杂质浓度低于漏极区域的杂质浓度,栅极绝缘膜和栅电极。 在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度 金地区。
    • 4. 发明申请
    • Speaker diaphragm, speaker unit and speaker apparatus
    • 扬声器隔膜,扬声器单元和扬声器设备
    • US20060182307A1
    • 2006-08-17
    • US11342709
    • 2006-01-31
    • Takao Sakamoto
    • Takao Sakamoto
    • H04R11/02
    • H04R9/06
    • To keep sounds emitted from a speaker apparatus in high quality. According to one embodiment of the present invention, a top layer and a back layer in a diaphragm of a speaker unit built in a speaker apparatus, and a reinforcement board for reinforcement which is interposed between the top layer and the back layer, and is disposed from the center part of diaphragm to the outer circumference part of diaphragm of the speaker diaphragm are provided. Thereby, unnecessary vibration caused by lack of the rigidity of the diaphragm can be prevented, and a possibility that the reinforcement board comes off or falls off can be remarkably reduced.
    • 保持扬声器设备发出的声音的质量。 根据本发明的一个实施例,设置在扬声器装置中的扬声器单元的隔膜中的顶层和背层,以及设置在顶层和背层之间的用于加强的加强板,并且被布置 提供从隔膜的中心部分到扬声器隔膜的隔膜的外周部分。 由此,可以防止由隔膜刚性引起的不必要的振动,可以显着地减少加强板脱落的可能性。
    • 9. 发明授权
    • Hydrophilicity treatment method of a silicon wafer
    • 硅晶片的亲水处理方法
    • US07514364B2
    • 2009-04-07
    • US11709739
    • 2007-02-23
    • Takao Sakamoto
    • Takao Sakamoto
    • H01L21/302
    • H01L21/306H01L21/02052
    • In a hydrophilicity treatment method including the step of rotating, on a polishing cloth, a mirror surface of a silicon wafer subjected to mirror-polishing followed by rinsing treatment while the mirror surface is pushed onto the cloth under the application of a small load with the contact of the mirror surface with a hydrophilicity treatment liquid, thereby making the mirror surface hydrophilic, the hydrophilicity treatment liquid is an aqueous liquid which comprises an organic compound having at least one hydrophilic group and having a molecular weight of 100 or more, a basic nitrogen-containing organic compound and a surfactant, and which has a pH of 9.5 to 10.5.
    • 在一种亲水处理方法中,包括以下步骤:在抛光布上旋转经过镜面抛光的硅晶片的镜面,随后进行漂洗处理,同时在施加小负载的情况下将镜面推到布上 镜面与亲水处理液的接触,从而使镜面亲水,亲水处理液是含有至少一个亲水性基团且分子量为100以上的有机化合物的碱性氮 的有机化合物和表面活性剂,其pH为9.5〜10.5。
    • 10. 发明申请
    • Hydrophilicity treatment method of a silicon wafer
    • 硅晶片的亲水处理方法
    • US20070207615A1
    • 2007-09-06
    • US11709739
    • 2007-02-23
    • Takao Sakamoto
    • Takao Sakamoto
    • H01L21/302H01L21/461
    • H01L21/306H01L21/02052
    • In a hydrophilicity treatment method including the step of rotating, on a polishing cloth, a mirror surface of a silicon wafer subjected to mirror-polishing followed by rinsing treatment while the mirror surface is pushed onto the cloth under the application of a small load with the contact of the mirror surface with a hydrophilicity treatment liquid, thereby making the mirror surface hydrophilic, the hydrophilicity treatment liquid is an aqueous liquid which comprises an organic compound having at least one hydrophilic group and having a molecular weight of 100 or more, a basic nitrogen-containing organic compound and a surfactant, and which has a pH of 9.5 to 10.5.
    • 在一种亲水处理方法中,包括以下步骤:在抛光布上旋转经过镜面抛光的硅晶片的镜面,随后进行漂洗处理,同时在施加小负载的情况下将镜面推到布上 镜面与亲水处理液的接触,从而使镜面亲水,亲水处理液是含有至少一个亲水性基团且分子量为100以上的有机化合物的碱性氮 的有机化合物和表面活性剂,其pH为9.5〜10.5。