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    • 63. 发明授权
    • Devices and methods for driving a signal off an integrated circuit
    • 将信号从集成电路驱动的装置和方法
    • US08183880B2
    • 2012-05-22
    • US12773505
    • 2010-05-04
    • Timothy HollisBrent Keeth
    • Timothy HollisBrent Keeth
    • H03K17/16
    • H03K19/018528H01L2224/16225H01L2924/15174H01L2924/15311
    • Embodiments of the present invention provide electronic devices, memory devices and methods of driving an on-chip signal off a chip. In one such embodiment, an on-chip signal and a second signal complementary to the on-chip signal are generated and provided to the two inputs of a differential driver. One output of the differential driver circuitry is coupled to an externally-accessible output terminal of the package. The other output may be terminated off the chip, but within the package. By routing the output signal and a second complementary output through the package, crosstalk potentially caused by the output signal can be reduced. Simultaneous switching output noise may also be reduced through use of a current-steering differential driver topology. Signal symmetry may also improve, reducing inter-symbol interference.
    • 本发明的实施例提供电子设备,存储器件以及驱动芯片上片上信号的方法。 在一个这样的实施例中,生成与片上信号互补的片上信号和第二信号,并将其提供给差分驱动器的两个输入。 差分驱动器电路的一个输出耦合到封装的外部可访问的输出端子。 另一个输出可能会从芯片中脱离,但在封装内。 通过将输出信号和通过封装的第二互补输出路由,可以减少由输出信号引起的串扰。 通过使用电流转向差动驱动器拓扑,也可以减少同时开关输出噪声。 信号对称性也可以提高,减少符号间干扰。
    • 67. 发明授权
    • Apparatus and method for repairing a semiconductor memory
    • 用于修复半导体存储器的装置和方法
    • US07492652B2
    • 2009-02-17
    • US11876477
    • 2007-10-22
    • Chris G. MartinTroy A. ManningBrent Keeth
    • Chris G. MartinTroy A. ManningBrent Keeth
    • G11C7/00
    • G11C17/165G11C29/4401G11C29/789G11C29/802G11C29/808G11C2029/4402
    • An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.
    • 用于修复半导体存储器件的装置和方法包括:第一存储单元阵列,第一冗余单元阵列和修复电路,被配置为在第一存储单元阵列中非易失性地存储指定至少一个有缺陷的存储单元的第一地址。 第一易失性高速缓存存储对应于指定所述至少一个有缺陷的存储器单元的第一地址的第一高速缓存地址。 修复电路将指定第一存储单元阵列的至少一个缺陷存储单元的第一地址分配给第一易失性高速缓存。 当第一存储器访问对应于第一缓存地址时,匹配电路将来自第一冗余单元阵列的至少一个冗余存储单元替换为第一存储单元阵列中的至少一个有缺陷的存储单元。